Abstract: Provided are a thin film transistor, to which a boron-doped oxide semiconductor thin film is applied as a channel layer, and a method of fabricating the same. The thin film transistor includes source and drain electrodes, a channel layer, a gate insulating layer, and a gate electrode, which are formed on a substrate. The channel layer is an oxide semiconductor thin film doped with boron. Therefore, it is possible to remarkably improve electrical characteristics and high temperature stability of the thin film transistor.

Abstract: Provided is a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. Here, the lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel. Thus, the use of the multi-layered transparent conductive layer can ensure transparency and conductivity, overcome a problem of contact resistance between the source and drain electrodes and a semiconductor, and improve processibility by patterning the multi-layered transparent conductive layer all at once, while deposition is performed layer by layer.

Abstract: Provided are a composition for an oxide semiconductor thin film, a field effect transistor using the same and a method of fabricating the field effect transistor. The composition includes an aluminum oxide, a zinc oxide, an indium oxide and a tin oxide. The thin film formed of the composition is in amorphous phase. The field effect transistor having an active layer formed of the composition can have an improved electrical characteristic and be fabricated by a low temperature process.

Abstract: A composition for an oxide semiconductor thin film, a field effect transistor (FET) using the composition, and a method of fabricating the FET are provided. The composition includes an aluminum oxide, a zinc oxide, and a tin oxide. The thin film formed of the composition remains in amorphous phase at a temperature of 400° C or less. The FET using an active layer formed of the composition has improved electrical characteristics and can be fabricated using a low-temperature process without expensive raw materials, such as In and Ga.

Abstract: Provided are a method and apparatus for modeling source-drain current of a TFT. The method includes receiving sample data, the sample data including a sample input value and a sample output value; adjusting modeling variables according to the sample data; calculating a current model value according to the adjusted modeling variables; when a difference between the calculated current model value and the sample output value is smaller than a predetermined threshold value, fitting a current model by applying the adjusted modeling variables to the current model; applying actual input data to the fitted current model; and outputting a result value corresponding to the actual input data, wherein the current model is a model for predicting the source-drain current of the TFT.

Abstract: Provided are a method of manufacturing a ZnO semiconductor layer for an electronic device, which can control the size of crystals of the ZnO semiconductor layer and the number of carriers using a surface chemical reaction between precursors, and a thin film transistor (TFT) including the ZnO semiconductor layer.

Abstract: Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor layer. The method includes the steps of: preparing a substrate and loading the substrate into a chamber; injecting a Zn precursor and an oxygen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the oxygen precursor using an atomic layer deposition (ALD) technique to form a ZnO thin layer on the substrate; and injecting a Zn precursor and an nitrogen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the nitrogen precursor to form a doping layer on the ZnO thin layer.

Abstract: An organic light emitting diode (OLED) device is provided. The OLED device includes: a substrate; an anode formed on the substrate; a first organic thin layer formed on the anode; an organic emission layer formed on the first organic thin layer; a second organic thin layer formed on the organic emission layer; and a cathode formed on the second organic thin layer, wherein the first and second organic thin layers are formed in a single layer or a multi-layer, and at least a part of the first or second organic thin layer is doped with or formed of an insulator. The OLED device provides excellent durability, long life-time, and increased luminous efficiency by balanced charge injection caused by doping or stacking the insulator into or on the organic thin layer.

Abstract: An organic electroluminescent element including an organic compound layer which is composed of a C—F compound (PFPT) having a triazine group is provided. The organic electroluminescent element includes: two electrodes; and at least one organic compound layer formed between the two electrodes, in which the organic compound layer is doped with a triazine derivative compound represented by the following Formula: where each of R1, R2 and R3 is a perfluorophenylene derivative.

Abstract: Provided is an apparatus for measuring a picture and a lifetime of a display panel including: a chamber having at least one display panel for measurement disposed therein, and for uniformly maintaining temperature and humidity conditions of an inner portion; at least one camera installed in the chamber to obtain image signals of the display panel; a bias supply and measurement part for providing pulse bias voltage and current required to measure depending on control signals, and measuring the voltage and current to convert into digital data when the display panel is driven; a converter for converting the image signals obtained through the camera into digital data; and a control and data processing part for generating parameters by receiving the digital data from the bias supply and measurement part and the converter, and analyzing a lifetime of the display panel using the parameters.

Abstract: An organic electroluminescent element including an organic compound layer which is composed of a C—F compound (PFPT) having a triazine group is provided. The organic electroluminescent element includes: two electrodes; and at least one organic compound layer formed between the two electrodes, in which the organic compound layer is doped with a triazine derivative compound represented by the following Formula: where each of R1, R2 and R3 is a perfluorophenylene derivative.

Abstract: Provided are bisphenylene-spirobifluorene compounds, a method for synthesizing the same, and EL material and device having the same. The bisphenylene-spirobifluorene compound is defined by the following formula: wherein R1 and R2 are identical or different and are independently a straight-chain or branched alkyl group having from 1 to 22 carbon atoms, X1 and X2 independently contains one or more elements selected from the group consisting of C, O, N, S, Si and Ge, and m and n are integers from 1 to 4.

Abstract: Provided is an apparatus for measuring a picture and a lifetime of a display panel including: a chamber having at least one display panel for measurement disposed therein, and for uniformly maintaining temperature and humidity conditions of an inner portion; at least one camera installed in the chamber to obtain image signals of the display panel; a bias supply and measurement part for providing pulse bias voltage and current required to measure depending on control signals, and measuring the voltage and current to convert into digital data when the display panel is driven; a converter for converting the image signals obtained through the camera into digital data; and a control and data processing part for generating parameters by receiving the digital data from the bias supply and measurement part and the converter, and analyzing a lifetime of the display panel using the parameters.

Abstract: An organic electroluminescent device with an encapsulation film formed by wet processing and a manufacturing method thereof. The organic electroluminescent device includes a laminate structure including an anode, an organic light emitting layer and a cathode sequentially disposed on a substrate, and an encapsulation film having a polymer layer made of a polymerization product of a vinyl monomer covering the laminate structure. In the method for manufacturing the organic electroluminescent device, a laminate structure including an anode, an organic light emitting layer and a cathode sequentially disposed is formed on a substrate. An organic solution containing a vinyl monomer and a polymerization initiator is coated on the laminate structure. A polymerization reaction is induced to the organic solution coated on the laminate structure, thereby forming an encapsulation film made of a polymer layer on the laminate structure.

Abstract: Provided are spirobifluorene compounds which can provide excellent processibility with improved solubility in organic solvents, an electroluminescence (EL) polymer obtained therefrom and an EL element having the same. The EL polymer comprising repeating units of the following formula: wherein R1 and R2 are identical or different and are independently a straight-chain or branched alkyl group having from 1 to 22 carbon atoms or an aryl group substituted by C1-C22 alkyl, and at least one of the R1 and R2 contains one or more atoms selected from the group consisting of O, N, S, Si and Ge.

Abstract: Provided are compounds having molecular components capable of transporting/injecting hole and an organic EL device having a self-assembled monolayer comprising the same. The compound has the following formula: Ar—R—SiX3 wherein Ar is a functional group having hole transporting or injecting capability, R is a C1 to C22 alkyl group, and X is an alkoxy group or halogen.

Abstract: Bisphenylene-spirobifluorene compounds, a method for synthesizing the same, and EL material and device having the same. The bisphenylene-spirobifluorene compound is defined by the following formula: wherein R1 and R2 are identical or different and are independently a straight-chain or branched alkyl group having from 1 to 22 carbon atoms, X1 and X2 independently contains one or more elements selected from the group consisting of C, O, N, S, Si and Ge, and m and n are integers from 1 to 4.

Abstract: In the organic electroluminescence (EL) device containing a bis-condensed derivative of 4-(dicyanomethylene)-2-methyl-6-(para-(dimethylaminostyryl)-4H-pyran, and the preparation thereof, the inventive organic electroluminescence device has a high luminescent efficiency and color coordinates based on a high purity, and is further simple in a synthesis and is prominent in a thermal stability, thereby providing great merits to a mass production of the organic electroluminescence device.

Abstract: Provided are bisphenylene-spirobifluorene compounds, a method for synthesizing the same, and EL material and device having the same.

Abstract: An organic electroluminescent device with an encapsulation film formed by wet processing and a manufacturing method thereof. The organic electroluminescent device includes a laminate structure including an anode, an organic light emitting layer and a cathode sequentially disposed on a substrate, and an encapsulation film having a polymer layer made of a polymerization product of a vinyl monomer covering the laminate structure. In the method for manufacturing the organic electroluminescent device, a laminate structure including an anode, an organic light emitting layer and a cathode sequentially disposed is formed on a substrate. An organic solution containing a vinyl monomer and a polymerization initiator is coated on the laminate structure. A polymerization reaction is induced to the organic solution coated on the laminate structure, thereby forming an encapsulation film made of a polymer layer on the laminate structure.