Patents by Inventor Hyeon Jin Shin

Hyeon Jin Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9023221
    Abstract: A method of forming a multi-layer graphene includes forming a stack of a graphitizing metal catalyst layer and graphene by repeatedly performing a cycle of first forming the graphitizing metal catalyst layer on a substrate, and then forming the graphene on the graphitizing metal catalyst layer, and removing the graphitizing metal catalyst layer.
    Type: Grant
    Filed: April 20, 2012
    Date of Patent: May 5, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yun-sung Woo, Jae-young Choi, Won-mook Choi, Hyeon-jin Shin, Seon-mi Yoon
  • Patent number: 8981357
    Abstract: A hydrophobic organic layer may be formed on a surface of a graphene doped with a dopant to improve stability of the doped graphene with respect to moisture and temperature. Thus, the transparent electrode having the doped graphene containing the hydrophobic organic layer may be usefully applied in solar cells or display devices.
    Type: Grant
    Filed: March 20, 2013
    Date of Patent: March 17, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seon-mi Yoon, Hyeon-jin Shin, Jae-young Choi, Won-mook Choi, Soo-min Kim, Young-hee Lee
  • Patent number: 8968587
    Abstract: Methods of preparing graphene nano ribbons may include forming a graphene sheet on at least one surface of a substrate, forming a plasma mask having a nano pattern on the graphene sheet, and forming a nano pattern on the graphene sheet by plasma treating a stack structure on which the plasma mask is formed.
    Type: Grant
    Filed: June 6, 2011
    Date of Patent: March 3, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyeon-jin Shin, Jae-young Choi, Young-hee Lee, Gang-hee Han
  • Patent number: 8945687
    Abstract: Disclosed are a heat transfer medium and a heat transfer method that uses the heat transfer medium. The heat transfer medium comprises a light-transparent substrate coated with a plurality of nano particles. The nano particles absorb light incident thereon to thereby produce heat, which is transferred to a target object to be heated. Nano particles can be applied onto a target object. After heating, the particles are removed by etching. Nano particles can be selectively applied to the light-transparent substrate or directly to a target object to be heat so as to localize heat-production and thus heat selective portions of the target object.
    Type: Grant
    Filed: October 11, 2011
    Date of Patent: February 3, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seonmi Yoon, Jaeyoung Choi, Hyeon Jin Shin, Jeong Gun Lee, Jongmyeon Park
  • Patent number: 8921824
    Abstract: A three-dimensional graphene structure, and methods of manufacturing and transferring the same including forming at least one layer of graphene having a periodically repeated three-dimensional shape. The three-dimensional graphene structure is formed by forming a pattern having a three-dimensional shape on a surface of a substrate, and forming the three-dimensional graphene structure having the three-dimensional shape of the pattern by growing graphene on the substrate on which the pattern is formed. The three-dimensional graphene structure is transferred by injecting a gas between the three-dimensional graphene structure and the substrate, separating the three-dimensional graphene structure from the substrate by bonding the three-dimensional graphene structure to an adhesive support, combining the three-dimensional graphene structure with an insulating substrate, and removing the adhesive support.
    Type: Grant
    Filed: April 2, 2012
    Date of Patent: December 30, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyeon-jin Shin, Jae-young Choi, Ji-hoon Park, Joung-real Ahn
  • Patent number: 8890171
    Abstract: A method of fabricating a single-layer graphene on a silicon carbide (SiC) wafer includes forming a plurality of graphene layers on the SiC wafer such that the plurality of graphene layers are on a buffer layer of the SiC wafer, the buffer layer being formed of carbon; removing the plurality of graphene layers from the buffer layer; and converting the buffer layer to a single-layer graphene.
    Type: Grant
    Filed: July 9, 2013
    Date of Patent: November 18, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yun-sung Woo, Seon-mi Yoon, Hyeon-jin Shin, Dong-wook Lee, Jae-young Choi
  • Patent number: 8852379
    Abstract: A carbonization catalyst for forming graphene may be exfoliated from a graphene sheet by etching. A binder layer may be formed on the graphene sheet on which a carbonization catalyst is formed, to support and fix all or part of the graphene sheet. Further, the graphene sheet from which the carbonization catalyst is exfoliated may be transferred to a device. When exfoliating the carbonization catalyst from the graphene sheet, an acid may be used together with a wetting agent.
    Type: Grant
    Filed: February 2, 2012
    Date of Patent: October 7, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyeon Jin Shin, Jaeyoung Choi, Seonmi Yoon
  • Publication number: 20140287244
    Abstract: A substrate assembly includes a first hexagonal boron nitride sheet directly bonded to a surface of a substrate, and a metal layer on the first hexagonal boron nitride sheet.
    Type: Application
    Filed: October 25, 2013
    Publication date: September 25, 2014
    Applicants: Sungkyunkwan University Foundation for Corporate Collaboration, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyeon-jin SHIN, Sang-Woo KIM, Jin yeong LEE
  • Publication number: 20140263166
    Abstract: A graphene base, including: graphene; and a substrate, wherein the graphene is formed directly on at least one surface of the substrate, and at least about 90 percent of an area of the surface of the substrate does not have a graphene wrinkle.
    Type: Application
    Filed: May 28, 2014
    Publication date: September 18, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hyeon-jin SHIN, Won-mook CHOI, Jae-young CHOI, Seon-mi YOON
  • Patent number: 8815404
    Abstract: Disclosed herein is a protective film. The protective film is produced by alternate coating of a polysilazane-based polymer and a flexible polysiloxane-based polymer. The polysilazane-based polymer is cured at low temperature to form silica, thereby achieving high hardness and high light transmittance. The protective film has improved interfacial adhesion between the respective coating films, which prevents permeation of moisture and oxygen. In addition, the protective film can be easily produced by low-temperature wet processes. Also disclosed herein is an encapsulation material comprising the protective film.
    Type: Grant
    Filed: September 30, 2008
    Date of Patent: August 26, 2014
    Assignees: Samsung Electronics Co., Ltd., Cheil Industries Inc.
    Inventors: Kwang Hee Lee, Xavier Bulliard, Yi Yeol Lyu, Hyeon Jin Shin, Yun Hyuk Choi
  • Publication number: 20140231752
    Abstract: A graphene device and an electronic apparatus including the same are provided. According to example embodiments, the graphene device includes a transistor including a source, a gate, and a drain, an active layer through which carriers move, and a graphene layer between the gate and the active layer. The graphene layer may be configured to function both as an electrode of the active layer and a channel layer of the transistor.
    Type: Application
    Filed: February 14, 2014
    Publication date: August 21, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hyeon-jin SHIN, Kyung-eun BYUN, Hyun-jae SONG, Seong-jun PARK, David SEO, Yun-sung WOO, Dong-wook LEE, Jae-ho LEE, Hyun-jong CHUNG, Jin-seong HEO, In-kyeong YOO
  • Publication number: 20140220348
    Abstract: Provided is a process for economically preparing a graphene shell having a desired configuration which is applicable in various fields wherein in the process the thickness of the graphene shell can be controlled, and a graphene shell prepared by the process.
    Type: Application
    Filed: April 7, 2014
    Publication date: August 7, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jae-young CHOI, Hyeon- Jin SHIN, Seon-mi YOON
  • Patent number: 8790775
    Abstract: A hexagonal boron nitride sheet having: a two-dimensional planar structure with a sp2 B—N covalent bond, a Van der Waals bond between boron-nitrogen layers, a root mean square surface roughness of about 2 nanometers or less, and a length of about 1 millimeter or greater.
    Type: Grant
    Filed: December 5, 2012
    Date of Patent: July 29, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Woo Kim, Hyeon-Jin Shin, Jae-young Choi
  • Patent number: 8748968
    Abstract: Provided are a method of forming nano dots, method of fabricating a memory device including the same, charge trap layer including the nano dots and memory device including the same. The method of forming the nano dots may include forming cores, coating surfaces of the cores with a polymer, and forming graphene layers covering the surfaces of the cores by thermally treating the cores coated with the polymer. Also, the cores may be removed after forming the graphene layers. In addition, the surfaces of the cores may be coated with a graphitization catalyst material before coating the cores with the polymer. Also, the cores may include metal particles that trap charges and may also function as a graphitization catalyst.
    Type: Grant
    Filed: April 15, 2008
    Date of Patent: June 10, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-young Choi, Hyeon-jin Shin, Seon-mi Yoon
  • Patent number: 8734900
    Abstract: Provided are a process for economically preparing a graphene shell having a desired configuration which is applicable in various fields wherein in the process the thickness of the graphene shell can be controlled, and a graphene shell prepared by the process.
    Type: Grant
    Filed: December 1, 2011
    Date of Patent: May 27, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-young Choi, Hyeon-Jin Shin, Seon-mi Yoon
  • Publication number: 20140141265
    Abstract: A method of directly growing graphene of a graphene-layered structure, the method including ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and heat treating the SiC thin film with the ion implantation layer formed therein to graphenize a SiC surface layer existing on the ion implantation layer.
    Type: Application
    Filed: January 28, 2014
    Publication date: May 22, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD
    Inventors: Hyeon-jin SHIN, Jae-young CHOI, Joung-real AHN, Jung-tak SEO
  • Publication number: 20140141600
    Abstract: A method of preparing graphene includes forming a silicon carbide thin film on a substrate, forming a metal thin film on the silicon carbide thin film, and forming a metal composite layer and graphene on the substrate by heating the silicon carbide thin film and the metal thin film.
    Type: Application
    Filed: June 14, 2013
    Publication date: May 22, 2014
    Inventors: Dong Wook LEE, Hyeon-jin SHIN, Seong-jun PARK, Kyung-eun BYUN, David SEO, Hyun-jae SONG, Yun-sung WOO, Jae-ho LEE, Hyun-jong CHUNG, Jin-seong HEO
  • Patent number: 8723024
    Abstract: Provided is a transparent electrode including a graphene sheet. A transparent electrode having high conductivity, low sheet resistance, and low surface roughness can be prepared by employing the graphene sheet.
    Type: Grant
    Filed: April 18, 2008
    Date of Patent: May 13, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-Young Choi, Hyeon-Jin Shin, Seon-mi Yoon, Young-hee Lee
  • Patent number: 8715532
    Abstract: Disclosed herein is a reduced graphene oxide doped with a dopant, and a thin layer, a transparent electrode, a display device and a solar cell including the reduced graphene oxide. The reduced graphene oxide doped with a dopant includes an organic dopant and/or an inorganic dopant.
    Type: Grant
    Filed: July 11, 2008
    Date of Patent: May 6, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyeon-jin Shin, Jae-young Choi, Seon-mi Yoon
  • Publication number: 20140110670
    Abstract: A hydrophobic organic layer may be formed on a surface of a graphene doped with a dopant to improve stability of the doped graphene with respect to moisture and temperature. Thus, the transparent electrode having the doped graphene containing the hydrophobic organic layer may be usefully applied in solar cells or display devices.
    Type: Application
    Filed: March 20, 2013
    Publication date: April 24, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seon-mi YOON, Hyeon-jin SHIN, Jae-young CHOI, Won-mook CHOI, Soo-min KIM, Young-hee LEE