Abstract: Provided are a method of doping carbon nanotubes, p-doped carbon nanotubes prepared using the method, and an electrode, a display device or a solar cell including the carbon nanotubes.

Abstract: A graphene base, including: graphene; and a substrate, wherein the graphene is formed directly on at least one surface of the substrate, and at least about 90 percent of an area of the surface of the substrate does not have a graphene wrinkle.

Abstract: Disclosed herein is an ultraviolet (UV) light-blocking composition comprising a metal nanoparticle that absorbs and blocks a UV light wavelength using a surface plasmon-absorbing wavelength, and a dielectric. The UV light-blocking composition is capable of absorbing and blocking a UV light wavelength or, a specific wavelength, using the surface plasmon-absorbing wavelength of the metal nanoparticle or, the plasmon-absorbing wavelength transited by the dielectric, thereby demonstrating increased visibility when applied to an image display apparatus such as a mobile phone, and the like.

Abstract: A multi-functional cyclic silicate compound, a siloxane-based polymer prepared from the silicate compound and a process of producing an insulating film using the siloxane-based polymer. The silicate compound of the present invention is highly compatible with conventional pore-generating substances and hardly hygroscopic, so it is useful for the preparation of a siloxane-based polymer suitable to a SOG process. Furthermore, a film produced by the use of such siloxane-based polymer is excellent in mechanical properties, thermal stability and crack resistance and enhanced in insulating properties by virtue of its low hygroscopicity. Therefore, in the field of semiconductor production, this film is of great use as an insulating film.

Abstract: The present invention discloses a dispersant for carbon nanotubes having excellent dispersion ability and to a carbon nanotube composition including the dispersant. In the dispersant, the heads and tails of the dispersant are regioregularly arranged in one direction, and the structural properties of the dispersant are controlled such that the ratio of heads to tails is 1 or more, thereby effectively stabilizing and dispersing carbon nanotubes in various dispersion media, such as an organic solvent, water, a mixture thereof and the like, compared to conventional dispersants.

Abstract: Provided are a thin film transistor for display devices and a manufacturing method of the thin film transistor. The thin film transistor for display devices includes: a flexible substrate; a gate electrode layer formed on the flexible substrate; a first insulating layer formed on the flexible substrate and the gate electrode; a source and a drain formed on the first insulating layer; an active layer formed on the first insulating layer between the source and the drain; a second insulating layer formed on the first insulating layer, the source, the drain, and the active layer; and a drain electrode that opens the second insulating layer to be connected to the drain and is formed of a CNT dispersed conductive polymer.

Abstract: A carbon nanotube (CNT) film having a transformed substrate structure and a manufacturing method thereof. The CNT film includes a transparent substrate, a plurality of three-dimensional (3D) structures formed distant from each other on the transparent substrate, and carbon nanotubes (CNTs) deposited on the transparent substrate where the plurality of 3D structures is not formed. The method includes forming a plurality of 3D structures distant from each other on a transparent substrate, and depositing a CNT solution on the substrate with the plurality of 3D structures formed thereon, wherein the CNT solution is deposited into a portion of the transparent substrate where the 3D structures are not formed. Thus, the deposition mechanism of the CNT solution is controlled to thereby increase the transparency of the CNT film and the electrical conductivity of an electrode including the CNT film.

Abstract: Example embodiments relate to a poly-crystalline silicon (Si) thin film, a thin film transistor (TFT) formed from a poly-crystalline silicon (Si) thin film and methods of manufacturing the same. The method of manufacturing the poly-crystalline Si thin film includes forming an active layer formed of amorphous Si on a substrate, coating a gold nanorod on the active layer, and irradiating infrared rays onto the gold nanorod to crystallize the active layer.

Abstract: Disclosed is a nanocomposite composition, comprising transparent nanoparticles, a matrix polymer including a polydimethylsiloxane resin and an epoxy group-containing polydimethylsiloxane resin, and a siloxane dispersant including a head part having an affinity for the transparent nanoparticles and a tail part having an affinity for the polydimethylsiloxane resin. The nanocomposite composition of this invention can be effectively used in the encapsulation layer of a light emitting diode or in an optical film.

Abstract: Disclosed are a carbon nano-tube (CNT) thin film treated with chemical having an electron withdrawing functional group and a manufacturing method thereof. Specifically, the CNT thin film comprises a CNT composition to be applied on a plastic substrate. The CNT composition comprises a CNT; and chemical connected to the CNT and having an electron withdrawing functional group. In addition, the method for manufacturing a CNT thin film comprises steps of preparing a CNT; treating the CNT with chemical having an electron withdrawing functional group; mixing the CNT treated with the chemical with a dispersing agent or dispersing solvent to prepare a CNT dispersed solution; and forming a CNT thin film with the CNT dispersed solution. According to the CNT thin film and the manufacturing method thereof, a resistance of an electrode is decreased to improve the electric conductivity of the electrode.

Abstract: A carbon nanotube (CNT) film having a transformed substrate structure and a manufacturing method thereof. The CNT film includes a transparent substrate, a plurality of three-dimensional (3D) structures formed distant from each other on the transparent substrate, and carbon nanotubes (CNTs) deposited on the transparent substrate where the plurality of 3D structures is not formed. The method includes forming a plurality of 3D structures distant from each other on a transparent substrate, and depositing a CNT solution on the substrate with the plurality of 3D structures formed thereon, wherein the CNT solution is deposited into a portion of the transparent substrate where the 3D structures are not formed. Thus, the deposition mechanism of the CNT solution is controlled to thereby increase the transparency of the CNT film and the electrical conductivity of an electrode including the CNT film.

Abstract: Disclosed are a carbon nano-tube (CNT) light emitting device and a method of manufacturing the same. Specifically, the CNT light emitting device comprises: a CNT thin film formed using a CNT dispersed solution; a n-doping polymer formed on one end of the CNT thin film; a p-doping polymer formed on the other end of the CNT thin film; and a light emitting part between the n-doping polymer and the p-doping polymer. In addition, the method of manufacturing a CNT light emitting device comprises steps of: mixing CNTs with a dispersing agent or dispersing solvent to prepare a CNT dispersed solution; forming a CNT thin film using the CNT dispersed solution; coating a n-doping polymer on one end of the CNT thin film; and coating a p-doping polymer on the other end of the CNT thin film.

Abstract: A new single optical interband transition occurs at the corresponding p-doping state of the carbon nanotubes in the VIS-NIR region when the degree of p-doping of carbon nanotubes is increased beyond a certain degree. P-doped carbon nanotubes to exhibit the new single optical interband transition in the VIS-NIR region may be used for devices so as to improve sensitivity and selectivity of the devices.

Abstract: A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiO2 enhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.

Abstract: Nicotinamide and/or a compound which is chemically combined with nicotinamide may be used as a carbon nanotube (“CNT”) n-doping material. CNTs n-doped with the CNT n-doping material may have long-lasting doping stability in the air without de-doping. Further, CNT n-doping state may be easily controlled when using the CNT n-doping material. The CNT n-doping material and/or CNTs n-doped with the CNT n-doping material may be used for various applications.

Abstract: A compound containing at least two pyridinium derivatives in its molecular structure and being in a reduced form thereof may be used as a CNT n-doping material. The compound may donate electrons spontaneously to CNTs to n-dope the CNTs, while being oxidized into its stable state. An n-doped CNT that is doped with the CNT n-doping material may maintain a stable n-doped state for a long time without being dedoped even in the air and/or water. Further, the n-doped state may be easily controlled when using the CNT n-doping material.

Abstract: The separation of carbon nanotubes into metallic carbon nanotubes and semiconducting carbon nanotubes is made to be possible simultaneously with the dispersion of the carbon nanotubes by using viologen.

Abstract: Provided are a graphene pattern and a process of preparing the same. Graphene is patterned in a predetermined shape on a substrate to form the graphene pattern. The graphene pattern can be formed by forming a graphitizing catalyst pattern on a substrate, contacting a carbonaceous material with the graphitizing catalyst and heat-treating the resultant.

Abstract: A novel multi-functional linear siloxane compound, a siloxane polymer prepared from the siloxane compound, and a process for forming a dielectric film by using the siloxane polymer. The linear siloxane polymer has enhanced mechanical properties (e.g., modulus), superior thermal stability, a low carbon content and a low hygroscopicity and is prepared by the homopolymerization of the linear siloxane compound or the copolymerization of the linear siloxane compound with another monomer. A dielectric film can be produced by heat-curing a coating solution containing the siloxane polymer which is highly reactive. The siloxane polymer prepared from the siloxane compound not only has satisfactory mechanical properties, thermal stability and crack resistance, but also exhibits a low hygroscopicity and excellent compatibility with pore-forming materials, which leads to a low dielectric constant.

Abstract: A carbonization catalyst for forming graphene may be exfoliated from a graphene sheet by etching. A binder layer may be formed on the graphene sheet on which a carbonization catalyst is formed, to support and fix all or part of the graphene sheet. Further, the graphene sheet from which the carbonization catalyst is exfoliated may be transferred to a device. When exfoliating the carbonization catalyst from the graphene sheet, an acid may be used together with a wetting agent.