Abstract: A method of directly growing graphene of a graphene-layered structure, the method including ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and heat treating the SiC thin film with the ion implantation layer formed therein to graphenize a SiC surface layer existing on the ion implantation layer.

Abstract: Provided are a method of preparing a graphene shell and a graphene shell prepared using the method. A first heat treatment is performed on a mixture of an organic solvent and a graphitization catalyst so as to carburize the graphitization catalyst with carbon decomposed from the organic solvent. The graphitization catalyst is in the form of particles. A second heat treatment process is performed on the carburized graphitization catalyst in an inert or reductive gas atmosphere to thereby form graphene shells on surfaces of the carburized graphitization catalyst.

Abstract: A graphene laminate including a substrate, a binder layer on the substrate, and graphene on the binder layer, wherein the graphene is bound to the substrate by the binder layer.

Abstract: A method of fabricating a single-layer graphene on a silicon carbide (SiC) wafer includes forming a plurality of graphene layers on the SiC wafer such that the plurality of graphene layers are on a buffer layer of the SiC wafer, the buffer layer being formed of carbon; removing the plurality of graphene layers from the buffer layer; and converting the buffer layer to a single-layer graphene.

Abstract: Disclosed is a transparent carbon nanotube (CNT) electrode using a conductive dispersant. The transparent CNT electrode comprises a transparent substrate and a CNT thin film formed on a surface the transparent substrate wherein the CNT thin film is formed of a CNT composition comprising CNTs and a doped dispersant. Further disclosed is a method for producing the transparent CNT electrode. The transparent CNT electrode exhibits excellent conductive properties, can be produced in an economical and simple manner by a room temperature wet process, and can be applied to flexible displays. The transparent CNT electrode can be used to fabricate a variety of devices, including image sensors, solar cells, liquid crystal displays, organic electroluminescence (EL) displays and touch screen panels, that are required to have both light transmission properties and conductive properties.

Abstract: A graphene laminate including a substrate, a binder layer on the substrate, and graphene on the binder layer, wherein the graphene is bound to the substrate by the binder layer.

Abstract: Provided are a method of doping carbon nanotubes, p-doped carbon nanotubes prepared using the method, and an electrode, a display device or a solar cell including the carbon nanotubes. Particularly, a method of doping carbon nanotubes having improved conductivity by reforming the carbon nanotubes using an oxidizer, doped carbon nanotubes prepared using the method, and an electrode, a display device or a solar cell including the carbon nanotubes are provided.

Abstract: Provided are a method of doping carbon nanotubes, p-doped carbon nanotubes prepared using the method, and an electrode, a display device or a solar cell including the carbon nanotubes. Particularly, a method of doping carbon nanotubes having improved conductivity by reforming the carbon nanotubes using an oxidizer, doped carbon nanotubes prepared using the method, and an electrode, a display device or a solar cell including the carbon nanotubes are provided.

Abstract: A transistor includes at least three terminals comprising a gate electrode, a source electrode and a drain electrode, an insulating layer disposed on a substrate, and a semiconductor layer disposed on the substrate, wherein a current which flows between the source electrode and the drain electrode is controlled by application of a voltage to the gate electrode, where the semiconductor layer includes a graphene layer and at least one of a metal atomic layer and a metal ion layer, and where the metal atomic layer or the metal ion layer is interposed between the graphene layer and the insulating layer.

Abstract: A high frequency circuit includes a first electronic device, a second electronic device, and a graphene interconnection unit, where at least one of a trench and a via is defined under the graphene interconnection unit.

Abstract: A high frequency circuit includes a first electronic device, a second electronic device, and a graphene interconnection unit including graphene and which connects the first and second electronic devices, where an interlayer distance of the graphene is greater than or equal to about 0.34 nanometer.

Abstract: Provided is a method of modifying carbon nanotubes, the method including: preparing a mixed solution in which a radical initiator and a carbon nanotube are dispersed; applying energy to the mixed solution to decompose the radical initiator into a radical; and reacting the decomposed radical with a surface of the carbon nanotube, wherein the radical which has reacted with the carbon nanotube is detached from the carbon nanotube after the reaction with the carbon nanotube. In the method of modifying carbon nanotube, a radical is reacted with a carbon nanotube and then separated from the carbon nanotube to thus modify the surface of the carbon nanotube without chemical bonding. Accordingly, the conductivity of the carbon nanotube can be increased.

Abstract: Disclosed are a carbon nano-tube (CNT) light emitting device and a method of manufacturing the same. Specifically, the CNT light emitting device comprises: a CNT thin film formed using a CNT dispersed solution; a n-doping polymer formed on one end of the CNT thin film; a p-doping polymer formed on the other end of the CNT thin film; and a light emitting part between the n-doping polymer and the p-doping polymer. In addition, the method of manufacturing a CNT light emitting device comprises steps of: mixing CNTs with a dispersing agent or dispersing solvent to prepare a CNT dispersed solution; forming a CNT thin film using the CNT dispersed solution; coating a n-doping polymer on one end of the CNT thin film; and coating a p-doping polymer on the other end of the CNT thin film.

Abstract: The present invention discloses a dispersant for carbon nanotubes having excellent dispersion ability and to a carbon nanotube composition including the dispersant. In the dispersant, the heads and tails of the dispersant are regioregularly arranged in one direction, and the structural properties of the dispersant are controlled such that the ratio of heads to tails is 1 or more, thereby effectively stabilizing and dispersing carbon nanotubes in various dispersion media, such as an organic solvent, water, a mixture thereof and the like, compared to conventional dispersants.

Abstract: A method of directly growing graphene of a graphene-layered structure, the method including ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and heat treating the SiC thin film with the ion implantation layer formed therein to graphenize a SiC surface layer existing on the ion implantation layer.

Abstract: A graphene-on-substrate includes a substrate, a first intermediate layer disposed on the substrate, and graphene disposed on the first intermediate layer, where the first intermediate layer comprises a material having an intermediate polarity value between a polarity of the substrate and a polarity of the graphene.

Abstract: Provided are a graphene pattern and a process of preparing the same. Graphene is patterned in a predetermined shape on a substrate to form the graphene pattern. The graphene pattern can be formed by forming a graphitizing catalyst pattern on a substrate, contacting a carbonaceous material with the graphitizing catalyst and heat-treating the resultant.

Abstract: A method of fabricating a liquid film is provided. The method comprises the steps of applying hydrophilic liquid onto a substrate with an electrode formed thereunder, covering the hydrophilic liquid with a protection film comprising hydrophobic liquid, dispersing surfactant for reducing the surface tension between the hydrophilic liquid and the protection film, and applying voltage to the hydrophilic liquid and the electrode to wet the substrate with the hydrophilic liquid. With the surfactant and the electro-wetting principle, a contact angle between the hydrophilic liquid and the substrate is controlled. The liquid film having a uniform thickness in nano size is thus formed on the substrate. The protection film prevents the evaporation of the liquid film in the air to thereby secure the stability of the liquid film.

Abstract: A method of preparing crystalline graphene includes performing a first thermal treatment including supplying heat to an inorganic substrate in a reactor, introducing a vapor carbon supply source into the reactor during the first thermal treatment to form activated carbon, and binding of the activated carbon on the inorganic substrate to grow the crystalline graphene.

Abstract: A method of fabricating a liquid film is provided. The method comprises the steps of applying hydrophilic liquid onto a substrate with an electrode formed thereunder, covering the hydrophilic liquid with a protection film comprising hydrophobic liquid, dispersing surfactant for reducing the surface tension between the hydrophilic liquid and the protection film, and applying voltage to the hydrophilic liquid and the electrode to wet the substrate with the hydrophilic liquid. With the surfactant and the electro-wetting principle, a contact angle between the hydrophilic liquid and the substrate is controlled. The liquid film having a uniform thickness in nano size is thus formed on the substrate. The protection film prevents the evaporation of the liquid film in the air to thereby secure the stability of the liquid film.