Patents by Inventor Hyeon Woo Jang
Hyeon Woo Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210305153Abstract: The method includes forming a first dielectric layer on a substrate, forming a via in the first dielectric layer, sequentially forming a first metal pattern, a first metal oxide pattern, a second metal pattern, and an antireflective pattern on the first dielectric layer, and performing an annealing process to react the first metal oxide pattern and the second metal pattern with each other to form a second metal oxide pattern. The forming the second metal oxide pattern includes forming the second metal oxide pattern by a reaction between a metal element of the second metal pattern and an oxygen element of the first metal oxide pattern.Type: ApplicationFiled: January 21, 2021Publication date: September 30, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Jihoon CHANG, Jimin CHOI, Yeonjin LEE, Hyeon-Woo JANG, Jung-Hoon HAN
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Publication number: 20200312852Abstract: A semiconductor device includes a substrate including a cell region and a peripheral region, a cell gate electrode buried in a groove crossing a cell active portion of the cell region, a cell line pattern crossing over the cell gate electrode, the cell line pattern being connected to a first source/drain region in the cell active portion at a side of the cell gate electrode, a peripheral gate pattern crossing over a peripheral active portion of the peripheral region, a planarized interlayer insulating layer on the substrate around the peripheral gate pattern, and a capping insulating layer on the planarized interlayer insulating layer and a top surface of the peripheral gate pattern, the capping insulating layer including an insulating material having an etch selectivity with respect to the planarized interlayer insulating layer.Type: ApplicationFiled: June 16, 2020Publication date: October 1, 2020Inventors: Ho-In RYU, Taiheui CHO, Keunnam KIM, Kyehee YEOM, Junghwan PARK, Hyeon-Woo JANG
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Patent number: 10714478Abstract: A semiconductor device includes a substrate including a cell region and a peripheral region, a cell gate electrode buried in a groove crossing a cell active portion of the cell region, a cell line pattern crossing over the cell gate electrode, the cell line pattern being connected to a first source/drain region in the cell active portion at a side of the cell gate electrode, a peripheral gate pattern crossing over a peripheral active portion of the peripheral region, a planarized interlayer insulating layer on the substrate around the peripheral gate pattern, and a capping insulating layer on the planarized interlayer insulating layer and a top surface of the peripheral gate pattern, the capping insulating layer including an insulating material having an etch selectivity with respect to the planarized interlayer insulating layer.Type: GrantFiled: August 6, 2019Date of Patent: July 14, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ho-In Ryu, Taiheui Cho, Keunnam Kim, Kyehee Yeom, Junghwan Park, Hyeon-Woo Jang
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Publication number: 20190363088Abstract: A semiconductor device includes a substrate including a cell region and a peripheral region, a cell gate electrode buried in a groove crossing a cell active portion of the cell region, a cell line pattern crossing over the cell gate electrode, the cell line pattern being connected to a first source/drain region in the cell active portion at a side of the cell gate electrode, a peripheral gate pattern crossing over a peripheral active portion of the peripheral region, a planarized interlayer insulating layer on the substrate around the peripheral gate pattern, and a capping insulating layer on the planarized interlayer insulating layer and a top surface of the peripheral gate pattern, the capping insulating layer including an insulating material having an etch selectivity with respect to the planarized interlayer insulating layer.Type: ApplicationFiled: August 6, 2019Publication date: November 28, 2019Inventors: Ho-In RYU, Taiheui CHO, Keunnam KIM, Kyehee YEOM, Junghwan PARK, Hyeon-Woo JANG
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Patent number: 10056339Abstract: A semiconductor device includes a substrate, a first insulation layer, data storage elements, a contact plug, and a first dummy dam. The first insulation layer is on the substrate and includes a pad region and a peripheral region adjacent to the pad region. The data storage elements are on the pad region of the first insulation layer. The contact plug penetrates the first insulation layer on the peripheral region. The first dummy dam penetrates the first insulation layer and is disposed between the data storage elements and the contact plug.Type: GrantFiled: June 20, 2017Date of Patent: August 21, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Hyeon-Woo Jang, Junghwan Park, Ramakanth Kappaganthu, Sungjin Kim, Junyong Noh, Jung-Hoon Han, Seung Soo Kim, Sungjin Kim, Sojung Lee
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Patent number: 9966495Abstract: Disclosed are a transparent conductive layer and a transparent electrode comprising the same, and in particular, a zinc oxide-based transparent conductive layer having a textured surface, wherein the textured surface has protrusions, each protrusion having a ridge forming an arc in its protruding direction, or having an apex at an edge thereof such that two ridges forms an obtuse angle of 90° or more. The transparent conductive layer is manufactured by sputtering only without wet etching.Type: GrantFiled: September 8, 2014Date of Patent: May 8, 2018Assignee: LG CHEM, LTD.Inventors: Jung-Sik Bang, Hyeon-Woo Jang, Jin-Hyong Lim
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Publication number: 20180040571Abstract: A semiconductor device includes a substrate, a first insulation layer, data storage elements, a contact plug, and a first dummy dam. The first insulation layer is on the substrate and includes a pad region and a peripheral region adjacent to the pad region. The data storage elements are on the pad region of the first insulation layer. The contact plug penetrates the first insulation layer on the peripheral region. The first dummy dam penetrates the first insulation layer and is disposed between the data storage elements and the contact plug.Type: ApplicationFiled: June 20, 2017Publication date: February 8, 2018Inventors: HYEON-WOO JANG, JUNGHWAN PARK, RAMAKANTH KAPPAGANTHU, SUNGJIN KIM, JUNYONG NOH, JUNG-HOON HAN, SEUNG SOO KIM, SUNGJIN KIM, SOJUNG LEE
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Patent number: 9607994Abstract: Provided are semiconductor devices and methods of fabricating the same. In methods of forming the same, an etch stop pattern and a separate spacer can be formed on a sidewall of a bit line contact, wherein the etch stop pattern and the separate spacer each comprise material having an etch selectivity relative to an oxide. A storage node contact plug hole can be formed so that the etch stop pattern and the separate spacer form a portion of a sidewall of the storage node contact plug hole spaced apart from the bit line contact. The storage node contact plug hole can be cleaned to remove a natural oxide formed in the storage node contact plug hole. Related devices are also disclosed.Type: GrantFiled: June 30, 2015Date of Patent: March 28, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Keunnam Kim, Sunyoung Park, Kyehee Yeom, Hyeon-Woo Jang, Jin-Won Jeong, Changhyun Cho, HyeongSun Hong
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Patent number: 9536868Abstract: A semiconductor device includes a plurality of bit lines that intersect an active region on a substrate and extend in a first direction, a contact pad formed on the active region between adjacent bit lines, and a plurality of spacers disposed on sidewalls of the plurality of bit lines. An upper portion of the contact pad is interposed between adjacent spacers, and a lower portion of the contact pad has a width greater than a distance between adjacent spacers.Type: GrantFiled: October 5, 2015Date of Patent: January 3, 2017Assignee: SAMSUNG ELECTRONICS CO, LTD.Inventors: Keun-Nam Kim, Sun-Young Park, Soo-Ho Shin, Kye-Hee Yeom, Hyeon-Woo Jang, Jin-Won Jeong, Chang-Hyun Cho, Hyeong-Sun Hong
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Patent number: 9472617Abstract: Provided is a semiconductor device. The semiconductor device includes an isolation region disposed in a semiconductor substrate and configured to define an active region. A gate electrode buried in the active region is disposed. A gate dielectric layer is disposed between the active region and the gate electrode. A first source/drain region and a second source/drain region are disposed in the active region on both sides of the gate electrodes. An interconnection structure intersecting with the gate electrode, overlapping the first and second source/drain regions, electrically connected with the first source/drain region, and spaced apart from the second source/drain region is disposed. A contact structure is disposed on the second source/drain region.Type: GrantFiled: January 23, 2015Date of Patent: October 18, 2016Assignee: Samsung Electronics Co. Ltd.Inventor: Hyeon-Woo Jang
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Publication number: 20160056158Abstract: A semiconductor device includes a substrate including a cell region and a peripheral region, a cell gate electrode buried in a groove crossing a cell active portion of the cell region, a cell line pattern crossing over the cell gate electrode, the cell line pattern being connected to a first source/drain region in the cell active portion at a side of the cell gate electrode, a peripheral gate pattern crossing over a peripheral active portion of the peripheral region, a planarized interlayer insulating layer on the substrate around the peripheral gate pattern, and a capping insulating layer on the planarized interlayer insulating layer and a top surface of the peripheral gate pattern, the capping insulating layer including an insulating material having an etch selectivity with respect to the planarized interlayer insulating layer.Type: ApplicationFiled: November 4, 2015Publication date: February 25, 2016Inventors: Ho-In RYU, Taiheui CHO, Keunnam KIM, Kyehee YEOM, Junghwan PARK, Hyeon-Woo JANG
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Publication number: 20160043171Abstract: Provided is a semiconductor device. The semiconductor device includes an isolation region disposed in a semiconductor substrate and configured to define an active region. A gate electrode buried in the active region is disposed. A gate dielectric layer is disposed between the active region and the gate electrode. A first source/drain region and a second source/drain region are disposed in the active region on both sides of the gate electrodes. An interconnection structure intersecting with the gate electrode, overlapping the first and second source/drain regions, electrically connected with the first source/drain region, and spaced apart from the second source/drain region is disposed. A contact structure is disposed on the second source/drain region.Type: ApplicationFiled: January 23, 2015Publication date: February 11, 2016Inventor: Hyeon-Woo JANG
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Publication number: 20160035714Abstract: A semiconductor device includes a plurality of bit lines that intersect an active region on a substrate and extend in a first direction, a contact pad formed on the active region between adjacent bit lines, and a plurality of spacers disposed on sidewalls of the plurality of bit lines. An upper portion of the contact pad is interposed between adjacent spacers, and a lower portion of the contact pad has a width greater than a distance between adjacent spacers.Type: ApplicationFiled: October 5, 2015Publication date: February 4, 2016Inventors: KEUN-NAM KIM, SUN-YOUNG PARK, SOO-HO SHIN, KYE-HEE YEOM, HYEON-WOO JANG, JIN-WON JEONG, CHANG-HYUN CHO, HYEONG-SUN HONG
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Publication number: 20150333071Abstract: Provided are semiconductor devices and methods of fabricating the same. In methods of forming the same, an etch stop pattern and a separate spacer can be formed on a sidewall of a bit line contact, wherein the etch stop pattern and the separate spacer each comprise material having an etch selectivity relative to an oxide. A storage node contact plug hole can be formed so that the etch stop pattern and the separate spacer form a portion of a sidewall of the storage node contact plug hole spaced apart from the bit line contact. The storage node contact plug hole can be cleaned to remove a natural oxide formed in the storage node contact plug hole. Related devices are also disclosed.Type: ApplicationFiled: June 30, 2015Publication date: November 19, 2015Inventors: Keunnam Kim, Sunyoung Park, Kyehee Yeom, Hyeon-Woo Jang, Jin-Won Jeong, Changhyun Cho, HyeongSun Hong
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Patent number: 9184168Abstract: A semiconductor device includes a substrate including a cell region and a peripheral region, a cell gate electrode buried in a groove crossing a cell active portion of the cell region, a cell line pattern crossing over the cell gate electrode, the cell line pattern being connected to a first source/drain region in the cell active portion at a side of the cell gate electrode, a peripheral gate pattern crossing over a peripheral active portion of the peripheral region, a planarized interlayer insulating layer on the substrate around the peripheral gate pattern, and a capping insulating layer on the planarized interlayer insulating layer and a top surface of the peripheral gate pattern, the capping insulating layer including an insulating material having an etch selectivity with respect to the planarized interlayer insulating layer.Type: GrantFiled: November 6, 2013Date of Patent: November 10, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ho-In Ryu, Taiheui Cho, Keunnam Kim, Kyehee Yeom, Junghwan Park, Hyeon-Woo Jang
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Patent number: 9177891Abstract: A semiconductor device includes a plurality of bit lines that intersect an active region on a substrate and extend in a first direction, a contact pad formed on the active region between adjacent bit lines, and a plurality of spacers disposed on sidewalls of the plurality of bit lines. An upper portion of the contact pad is interposed between adjacent spacers, and a lower portion of the contact pad has a width greater than a distance between adjacent spacers.Type: GrantFiled: October 3, 2013Date of Patent: November 3, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Keun-Nam Kim, Sun-Young Park, Soo-Ho Shin, Kye-Hee Yeom, Hyeon-Woo Jang, Jin-Won Jeong, Chang-Hyun Cho, Hyeong-Sun Hong
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Patent number: 9099343Abstract: Provided are semiconductor devices and methods of fabricating the same. In methods of forming the same, an etch stop pattern and a separate spacer can be formed on a sidewall of a bit line contact, wherein the etch stop pattern and the separate spacer each comprise material having an etch selectivity relative to an oxide. A storage node contact plug hole can be formed so that the etch stop pattern and the separate spacer form a portion of a sidewall of the storage node contact plug hole spaced apart from the bit line contact. The storage node contact plug hole can be cleaned to remove a natural oxide formed in the storage node contact plug hole. Related devices are also disclosed.Type: GrantFiled: October 18, 2013Date of Patent: August 4, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Keunnam Kim, Sunyoung Park, Kyehee Yeom, Hyeon-Woo Jang, Jin-Won Jeong, Changhyun Cho, HyeongSun Hong
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Patent number: 8920912Abstract: The present invention relates to a transparent electrically-conductive film comprising a substrate having a refractive index of n1, a first coating layer having a refractive index of n2, a second coating layer having a refractive index of n3, and an electrically-conductive oxide layer having a refractive index of n4 in a sequentially laminated form, wherein said refractive index of each layer complies with n1?n3<n2<n4, and a method of preparing the same. The transparent electrically-conductive film according to the present invention has especially excellent color feeling and mechanical property as well as excellent transmittance.Type: GrantFiled: July 7, 2011Date of Patent: December 30, 2014Assignee: LG Chem, Ltd.Inventors: Sang Uk Ryu, Dong Ryul Kim, Jang Yeon Hwang, Hyeon Woo Jang, Bon Suk Koo
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Publication number: 20140374242Abstract: Disclosed are a transparent conductive layer and a transparent electrode comprising the same, and in particular, a zinc oxide-based transparent conductive layer having a textured surface, wherein the textured surface has protrusions, each protrusion having a ridge forming an arc in its protruding direction, or having an apex at an edge thereof such that two ridges forms an obtuse angle of 90° or more. The transparent conductive layer is manufactured by sputtering only without wet etching.Type: ApplicationFiled: September 8, 2014Publication date: December 25, 2014Inventors: Jung-Sik BANG, Hyeon-Woo JANG, Jin-Hyong LIM
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Patent number: 8878293Abstract: A semiconductor device includes an interlayer insulating layer on a substrate, and a direct contact (DC) structure vertically penetrating the interlayer insulating layer and contacting the substrate, the DC structure including a DC hole exposing the substrate, an insulating DC spacer on an inner wall of the DC hole, and a conductive DC plug on the DC spacer and filling the DC hole, the DC plug including a lower DC plug and an upper DC plug on the lower DC plug, the lower DC plug having a smaller horizontal width than that of the upper DC plug.Type: GrantFiled: February 15, 2013Date of Patent: November 4, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Hyeon-Woo Jang, Won-Chul Lee, Jin-Won Jeong