Abstract: A semiconductor package includes: a first substrate; a first semiconductor chip; a second semiconductor chip being spaced apart, in a first direction, from the first substrate, the first direction being parallel to a top surface of the first substrate; at least one thermal radiation structure on the first substrate and between the first semiconductor chip and the second semiconductor chip; and a third semiconductor chip on the first semiconductor chip, the second semiconductor chip, and the at least one thermal radiation structure, wherein the at least one thermal radiation structure includes: a thermal radiation post; and a thermal conductive pattern on the thermal radiation post, wherein a bottom surface of the third semiconductor chip is in contact with the thermal conductive pattern, and wherein the top surface of the first substrate is in contact with the thermal radiation post.

Abstract: Disclosed is a semiconductor package comprising a first redistribution substrate; a solder ball on a bottom surface of the first redistribution substrate; a second redistribution substrate; a semiconductor chip between a top surface of the first redistribution substrate and a bottom surface of the second redistribution substrate; a conductive structure electrically connecting the first redistribution substrate and the second redistribution substrate, the conductive structure laterally spaced apart from the semiconductor chip and including a first conductive structure and a second conductive structure in direct contact with a top surface of the first conductive structure; and a conductive seed pattern between the first redistribution substrate and the first conductive structure. A material of first conductive structure and a material of the second conductive structure may be different from a material of the solder ball.

Abstract: A semiconductor package comprises a first redistribution substrate including first interconnection layers sequentially stacked on each other, a semiconductor chip mounted on the first redistribution substrate, a mold layer disposed on the first redistribution substrate and surrounding the semiconductor chip, a second redistribution substrate disposed on the mold layer and including second interconnection layers sequentially stacked on each other, a connection terminal disposed beside the semiconductor chip to connect the first and second redistribution substrates to each other, and outer terminals disposed on a bottom surface of the first redistribution substrate. Each of the first and second interconnection layers may include an insulating layer and a wire pattern in the insulating layer. The first redistribution substrate may have substantially the same thickness as the second redistribution substrate, and the first interconnection layers may be thinner than the second interconnection layers.

Abstract: A semiconductor package including a redistribution substrate extending in a first direction and a second direction perpendicular to the first direction, a semiconductor chip mounted on a top surface of the redistribution substrate, and an outer terminal on a bottom surface of the redistribution substrate. The redistribution substrate may include an under-bump pattern, a redistribution insulating layer covering a top surface and a side surface of the under-bump pattern, a protection pattern interposed between the top surface of the under-bump pattern and the redistribution insulating layer, and interposed between the side surface of the under-bump pattern and the redistribution insulating layer, and a redistribution pattern on the under-bump pattern. The outer terminal may be disposed on a bottom surface of the under-bump pattern.

Abstract: A semiconductor package includes: a first redistribution line structure; a first semiconductor chip on one surface of the first redistribution line structure; a first conductive bump between, and connecting, the first redistribution line structure and the first semiconductor chip; a first encapsulant encapsulating at least a portion of the first semiconductor chip; a second semiconductor chip on another, opposite surface of the first redistribution line and including a through via; a second conductive bump between, and connecting, the first redistribution line structure and the second semiconductor chip; a second encapsulant encapsulating at least a portion of the second semiconductor chip; and a second redistribution line structure on the second encapsulant. The second encapsulant covers at least a portion of a surface of the second semiconductor chip facing the second redistribution line structure.

Abstract: A semiconductor package including: a first substrate and a semiconductor device on the first substrate, wherein the first substrate includes: a first dielectric layer including a first hole; a second dielectric layer on the first dielectric layer and including a second hole that overlaps the first hole, the second hole being wider than the first hole; an under bump disposed in the first hole and the second hole, the under bump covering a portion of the second dielectric layer; and a connection member bonded to the under bump.

Abstract: Provided are a semiconductor package including a pad with high reliability and a method of manufacturing the semiconductor package. The semiconductor package includes a first redistribution substrate, a semiconductor chip on the first redistribution substrate, a through post extending around the semiconductor chip and on the first redistribution substrate, and a second redistribution substrate on the semiconductor chip and the through post. A first pad region and a second pad region are defined on an upper surface of the second redistribution substrate, the first pad region positioned at a central portion of the second redistribution substrate, and the second pad region extending around the first pad region, a first-type pad in a planar shape is in a first opening, a second-type pad having an outer protruding portion is in a second opening.

Abstract: An embodiment provides a semiconductor package including: a first redistribution layer structure including a plurality of redistribution vias and a plurality of UBM structures; and a first semiconductor die on the first redistribution layer structure, wherein each of the plurality of UBM structures includes a UBM via; and a UBM wire line extending in a horizontal direction on the UBM via and electrically connecting one of the plurality of redistribution vias and the UBM via in the horizontal direction.

Abstract: Disclosed is a semiconductor package comprising a first redistribution substrate; a solder ball on a bottom surface of the first redistribution substrate; a second redistribution substrate; a semiconductor chip between a top surface of the first redistribution substrate and a bottom surface of the second redistribution substrate; a conductive structure electrically connecting the first redistribution substrate and the second redistribution substrate, the conductive structure laterally spaced apart from the semiconductor chip and including a first conductive structure and a second conductive structure in direct contact with a top surface of the first conductive structure; and a conductive seed pattern between the first redistribution substrate and the first conductive structure. A material of first conductive structure and a material of the second conductive structure may be different from a material of the solder ball.

Abstract: A semiconductor package including a first semiconductor structure on a first redistribution layer structure; first conductive posts on the first redistribution layer structure and next to the first side of the first semiconductor structure; second conductive posts on the first redistribution layer structure and next to a second side opposite to the first side of the first semiconductor structure; a molding material molding the first semiconductor structure, the first conductive posts, and the second conductive posts on the first redistribution layer structure; a second redistribution layer structure on the molding material; a second semiconductor structure on the second redistribution layer structure; a heat dissipation structure on the second redistribution layer structure; and a 3D solenoid inductor including some of the second conductive posts, the redistribution lines at the uppermost of the first redistribution layer structure, and the redistribution lines at the lowermost of the second redistribution la

Abstract: A semiconductor package includes a semiconductor chip, a lower redistribution layer disposed under the semiconductor chip, the lower redistribution layer including a plurality of lower insulating layers, a plurality of lower redistribution patterns, and a plurality of lower conductive vias, a lower passivation layer disposed under the lower redistribution layer and provided with a recess at a bottom surface of the lower passivation layer, an under bump metallization (UBM) pad disposed in the first recess, a UBM protective layer disposed in the first recess and connected to the lower conductive vias while covering a top surface and opposite side surfaces of the UBM pad, and an outer connecting terminal connected to a bottom surface of the UBM pad. The bottom surface of the UBM pad is positioned at a first depth from the bottom surface of the lower passivation layer.

Abstract: Disclosed is a semiconductor package comprising an interposer substrate, a chip stack on the interposer substrate and including first semiconductor chips that are vertically stacked, a second semiconductor chip on the interposer substrate and horizontally spaced apart from the chip stack, a molding layer on the interposer substrate and surrounding the chip stack and the second semiconductor chip, a redistribution layer on the molding layer, and a plurality of conductive posts that vertically penetrate the molding layer and connect the interposer substrate to the redistribution layer.

Abstract: A semiconductor package includes a semiconductor chip, a lower redistribution layer disposed under the semiconductor chip, the lower redistribution layer including a plurality of lower insulating layers, a plurality of lower redistribution patterns, and a plurality of lower conductive vias, a lower passivation layer disposed under the lower redistribution layer and provided with a recess at a bottom surface of the lower passivation layer, an under bump metallization (UBM) pad disposed in the first recess, a UBM protective layer disposed in the first recess and connected to the lower conductive vias while covering a top surface and opposite side surfaces of the UBM pad, and an outer connecting terminal connected to a bottom surface of the UBM pad. The bottom surface of the UBM pad is positioned at a first depth from the bottom surface of the lower passivation layer.

Abstract: A semiconductor package may include a first redistribution substrate, a semiconductor chip disposed on the first redistribution substrate, a mold layer covering the semiconductor chip and including a first opening exposing a portion of a top surface of the semiconductor chip, a first passive device disposed on the portion of the top surface of the semiconductor chip exposed by the first opening, an insulating pattern filling the first opening and covering at least a portion of the first passive device, and a second redistribution substrate disposed on the mold layer. The first passive device may be spaced apart from the mold layer, with the insulating pattern interposed therebetween.

Abstract: A semiconductor package includes a first redistribution substrate, a first semiconductor chip mounted on the first redistribution substrate, a first molding layer on the first redistribution substrate and covering a top surface and lateral surfaces of the first semiconductor chip, a second redistribution substrate on the first molding layer, and an adhesive film between the second redistribution substrate and the first molding layer. The adhesive film is spaced apart from the first semiconductor chip and covers a top surface of the first molding layer. A lateral surface of the adhesive film is coplanar with a lateral surface of the second redistribution substrate.

Abstract: Disclosed are semiconductor packages and fabrication methods thereof. The semiconductor package includes a substrate, a first semiconductor chip and a second semiconductor chip that are mounted on the substrate, and a bridge chip between a first lateral surface of the first semiconductor chip and a second lateral surface of the second semiconductor chip. The first semiconductor chip and the second semiconductor chip are electrically connected through the bridge chip. The first semiconductor chip includes a first chip pad on the first lateral surface. The bridge chip includes a first connection pad on a first surface of the bridge chip. The first lateral surface of the first semiconductor chip and the first surface of the bridge chip are in contact with each other. The first chip pad and the first connection pad include a same material and are bonded to each other to constitute an integral piece formed.

Abstract: Disclosed is a semiconductor package comprising a lower circuit part having a first region and a second region horizontally offset from each other and including a connection structure within the first region and a logic chip within the second region, a memory structure that overlaps the connection structure in a vertical direction, and a thermal radiation structure that overlaps the logic chip in the vertical direction. The logic chip and the memory structure are spaced apart in a horizontal direction parallel to a top surface of the logic chip.

Abstract: Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises a lower semiconductor chip on a first redistribution substrate and including a through via, a lower molding layer on the first redistribution substrate and surrounding the lower semiconductor chip, a lower post on the first redistribution substrate and laterally spaced apart from the lower semiconductor chip, an upper semiconductor chip on the lower semiconductor chip and coupled to the through via, an upper molding layer on the lower molding layer and surrounding the upper semiconductor chip, an upper post on the lower molding layer and laterally spaced apart from the upper semiconductor chip, and a second redistribution substrate on the upper molding layer and coupled to the upper post. A top surface of the lower molding layer is at a level higher than that of a top surface of the lower semiconductor chip.

Abstract: A semiconductor package includes an interposer including a first redistribution layer and a second redistribution layer that is on the first redistribution layer and is electrically coupled to the first redistribution layer; and a semiconductor chip on the interposer. The first redistribution layer includes a first organic insulating layer and a plurality of first conductors in the first organic insulating layer. The second redistribution layer includes a second organic insulating layer, a first silicon insulating layer on the second organic insulating layer, and a plurality of second conductors penetrating through both the second organic insulating layer and the first silicon insulating layer. The semiconductor chip includes a second silicon insulating layer and a plurality of third conductors in the second silicon insulating layer.

Abstract: A semiconductor package includes a base substrate. An interposer substrate includes a plurality of interposer redistribution structures sequentially stacked in a vertical direction and an interposer insulation layer. The plurality of interposer redistribution structures includes a plurality of conductive interposer patterns and a plurality of conductive interposer vias. A semiconductor chip is disposed between the base substrate and the interposer substrate and is attached on the base substrate. A plurality of conductive connection pads is respectively disposed on a plurality of uppermost conductive interposer patterns of an uppermost interposer redistribution structure of the plurality of interposer redistribution structures. The interposer insulation layer includes a plurality of pad holes exposing at least a portion of each of an upper surface of a corresponding uppermost conductive interposer pattern of the plurality of uppermost conductive interposer patterns.