Abstract: The present disclosure provides semiconductor packages including a heat dissipation structure. In some embodiments, the semiconductor package includes a package substrate, a stacked chip disposed on the package substrate and including a lower chip and an upper chip, a memory chip disposed on the package substrate adjacent to the stacked chip, and an encapsulant encapsulating at least a portion of the stacked chip and the memory chip on the package substrate. An upper surface of the upper chip is exposed from the encapsulant. A dummy silicon chip is in contact with the upper chip on the lower chip.

Abstract: A semiconductor package includes a redistribution substrate, a sub-package disposed on the redistribution substrate, a semiconductor chip disposed on the redistribution substrate, a heat dissipation structure disposed on the redistribution substrate and surrounding the sub-package and the semiconductor chip, and an encapsulant. The redistribution substrate includes a redistribution structure. The semiconductor chip is positioned side-by-side with the sub-package. The encapsulant encapsulates the sub-package, the semiconductor chip, and the heat dissipation structure.

Abstract: A semiconductor package includes a first redistribution structure, a first semiconductor device mounted on the first redistribution structure, a molding layer surrounding the first semiconductor device, a second redistribution structure disposed on the molding layer and the first semiconductor device, a plurality of vertical connection conductors vertically extending in the molding layer and electrically connecting the first redistribution pattern to the second redistribution pattern, a second semiconductor device mounted on the second redistribution structure, the second semiconductor device and the first semiconductor device vertically and partially overlapping each other, a heat dissipation pad structure contacting an upper surface of the first semiconductor device, and a heat dissipation plate disposed on the heat dissipation pad structure and spaced apart from the second semiconductor device along a first straight line extending in a horizontal direction that is parallel to the upper surface of the first

Abstract: Provided is a semiconductor package including a lower redistribution structure, an internal semiconductor chip on an upper surface of the lower redistribution structure, an upper redistribution structure electrically connected to the lower redistribution structure through a conductive post, and a molding layer between the upper redistribution structure and the lower redistribution structure, the molding layer being adjacent to the internal semiconductor chip, wherein the upper redistribution structure includes an insulating layer including a redistribution pattern and a first material configured to transmit light, and a fiducial mark formed of the first material, and a lower surface of the fiducial mark is in contact with an upper surface of the molding layer.

Abstract: An image sensor package includes a glass substrate configured to focus incident light, a first redistribution layer and a second redistribution layer both disposed under the glass substrate while being horizontally spaced apart from each other by a first distance, an image sensor disposed such that an upper surface thereof is vertically spaced apart from both a lower surface of the first redistribution layer and a lower surface of the second redistribution layer by a second distance, and a first connector that connects both the first redistribution layer and the second redistribution layer to the image sensor. The thickness of the glass substrate is 0.6 to 0.8 mm. The first distance is smaller than the horizontal length of the image sensor by 50 ?m to 1 mm. The second distance is equal to or less than 0.1 mm.

Abstract: A semiconductor package includes: a first redistribution structure including at least one first redistribution layer and at least one first insulating layer; a first semiconductor chip electrically connected to the at least one first redistribution layer and disposed on a first surface of the first redistribution structure; a second semiconductor chip disposed on an upper surface of the first semiconductor chip; a first encapsulant disposed on a second surface of the first redistribution structure opposite the first surface of the first redistribution layer; first conductive posts electrically connected to the first semiconductor chip and penetrating the first encapsulant; and under bump metallurgy (UBM) structures disposed on a lower surface of the first encapsulant, wherein at least a portion of the UBM structures overlap at least a portion of the first conductive posts in a penetration direction of the first conductive posts and are connected to the first conductive posts.

Abstract: A semiconductor package includes a redistribution structure in which at least one redistribution layer and at least one insulating layer are alternately stacked; a semiconductor chip electrically connected to the at least one redistribution layer; and bumps on the redistribution structure, wherein the redistribution structure includes vias extending from the at least one redistribution layer in a vertical stacking direction of the redistribution structure; and under bump metallurgy (UBM) structures electrically connected between the vias and the bumps and configured to face the bumps in the vertical stacking direction of the redistribution structure, wherein each of the UBM structures includes a first UBM layer including a first metal material or an alloy of the first metal material; and a second UBM layer between one of the bumps and the first UBM layer and including a second metal material.

Abstract: A packaged integrated circuit includes a redistribution layer having a plurality of electrically conductive vias extending at least partially therethrough, and a plurality of lower pads electrically connected to corresponding ones of the plurality of electrically conductive vias. A semiconductor chip is provided on the redistribution layer, and external connection terminals are provided, which electrically contact corresponding ones of the plurality of lower pads within the redistribution layer. Each of the plurality of lower pads includes: (i) a lower under-bump metallization (UBM) layer in contact with a corresponding external connection terminal, and (ii) an upper UBM layer extending on and contacting the lower UBM layer. In addition, an upper surface of the lower UBM layer has a greater lateral width dimension relative to an upper surface of the upper UBM layer, which contacts a corresponding electrically conductive via.

Abstract: A semiconductor package includes a memory chip having chip pads on a first surface thereof. A redistribution layer is formed on the first surface of the memory chip. The redistribution layer is electrically connected to the chip pads. The redistribution layer has first redistribution pads on a first surface of the redistribution layer in a first region and a plurality of second redistribution pads on the first surface of the redistribution layer in a second region thereof. A processor chip is disposed on the first region of the redistribution layer and is electrically connected to the first redistribution pads. A sealing member is disposed on the first surface of the redistribution layer and covers the processor chip. Conductive structures are on the second region and penetrate through the sealing member and extend upwardly in a vertical direction away from the second redistribution pads.

Abstract: A semiconductor package includes a redistribution wiring layer having a first surface and a second surface opposite to the first surface, a conductive bump on the first surface, and a first semiconductor device on the conductive bump. The redistribution wiring layer includes redistribution wirings having an uppermost redistribution wiring, a bonding pad, and an uppermost insulating layer. The uppermost redistribution wiring has a redistribution via and a redistribution line on the redistribution via. The bonding pad disposes on the redistribution line of the uppermost redistribution wiring, and the conductive bump is disposed on the bonding pad. The uppermost insulating layer overlapping (e.g., covering) the uppermost redistribution wiring and having an opening exposing a portion of the bonding pad.

Abstract: A semiconductor package includes a first redistribution substrate, a semiconductor chip provided on a top surface of the first redistribution substrate, a conductive structure provided on the top surface of the first redistribution substrate and spaced apart from the semiconductor chip, a molding layer provided on the first redistribution substrate and covering a side surface of the semiconductor chip and a side surface of the conductive structure, and a second redistribution substrate on the molding layer and the conductive structure. The conductive structure includes a first conductive structure provided on the first redistribution substrate, and a second conductive structure provided on a top surface of the first conductive structure. The second redistribution substrate includes an insulating layer. At least a portion of a top surface of the second conductive structure directly contacts the insulating layer of the second redistribution substrate.

Abstract: Disclosed are packages and their fabrication methods. The package includes: a lower substrate with an upper pad; a lower chip on the lower substrate; a mold layer on the lower chip and the lower substrate; a post extending through the mold layer and provided on the upper pad around the lower chip, the post having a diameter less than a diameter of the upper pad; and an upper substrate on the post and the mold layer, the upper substrate including a lower pad having a diameter greater than the diameter of the post.

Abstract: A redistribution substrate may include a first interconnection layer having a first insulating pattern, a first dummy pattern and a second dummy pattern, the first and second dummy patterns being in the first insulating pattern, and a second interconnection layer stacked on the first interconnection layer, the second interconnection layer having a second insulating pattern, a signal pattern and a power/ground pattern, the signal and power/ground patterns being in the second insulating pattern. The first dummy pattern may be located below the signal pattern, and the second dummy pattern may be located below the power/ground pattern. The first dummy pattern may include dot patterns, and the second dummy pattern may include a plate pattern.

Abstract: Disclosed are semiconductor packages and fabrication methods thereof. The semiconductor package may include a lower substrate, a lower semiconductor chip, a redistribution layer, an upper semiconductor chip, and a through electrode. The lower substrate may include a first dielectric layer, a first conductive pattern having a wiring pattern and an under-bump pattern, a second dielectric layer, and a second conductive pattern. The under-bump pattern may include a first head part and a first tail part. The first head part may have a first lateral surface on the first dielectric layer that is inclined to a top surface of the first dielectric layer. The second conductive pattern may have a second lateral surface on the second dielectric layer that is perpendicular to a top surface of the second dielectric layer.

Abstract: A semiconductor package includes: a package substrate; a first semiconductor chip disposed on the package substrate; a heat-dissipation pattern disposed on the first semiconductor chip; a first mold layer disposed on the package substrate and at least partially surrounding the first semiconductor chip and the heat-dissipation pattern; a redistribution layer disposed on the first mold layer; a penetration electrode penetrating the first mold layer and coupled to the package substrate; and a connection pattern disposed on the penetration electrode, and connecting the redistribution layer to the penetration electrode, wherein a top surface of the heat-dissipation pattern and a top surface of the connection pattern are exposed by the first mold layer.

Abstract: A semiconductor package is disclosed. The semiconductor package may include a first redistribution substrate including a first insulating layer and a first redistribution pattern, a lower semiconductor chip mounted on the first redistribution substrate, a conductive structure disposed on the first redistribution substrate and horizontally spaced apart from the lower semiconductor chip, a first mold layer interposed between the first redistribution substrate and the second redistribution substrate to cover the lower semiconductor chip and the conductive structure, a second redistribution substrate on the first redistribution substrate, the second redistribution substrate including a second insulating layer and a second redistribution pattern, a first heat-dissipation pattern interposed between the lower semiconductor chip and the second insulating layer, and a heat-dissipation pad on the conductive structure.

Abstract: A semiconductor package includes a first redistribution substrate, a first semiconductor chip mounted on the first redistribution substrate, a first molding layer on the first redistribution substrate and covering a top surface and lateral surfaces of the first semiconductor chip, a second redistribution substrate on the first molding layer, and an adhesive film between the second redistribution substrate and the first molding layer. The adhesive film is spaced apart from the first semiconductor chip and covers a top surface of the first molding layer. A lateral surface of the adhesive film is coplanar with a lateral surface of the second redistribution substrate.

Abstract: A semiconductor package including: a first substrate and a semiconductor device on the first substrate, wherein the first substrate includes: a first dielectric layer including a first hole; a second dielectric layer on the first dielectric layer and including a second hole that overlaps the first hole, the second hole being wider than the first hole; an under bump disposed in the first hole and the second hole, the under bump covering a portion of the second dielectric layer; and a connection member bonded to the under bump.

Abstract: A semiconductor package including a redistribution substrate extending in a first direction and a second direction perpendicular to the first direction, a semiconductor chip mounted on a top surface of the redistribution substrate, and an outer terminal on a bottom surface of the redistribution substrate. The redistribution substrate may include an under-bump pattern, a redistribution insulating layer covering a top surface and a side surface of the under-bump pattern, a protection pattern interposed between the top surface of the under-bump pattern and the redistribution insulating layer, and interposed between the side surface of the under-bump pattern and the redistribution insulating layer, and a redistribution pattern on the under-bump pattern. The outer terminal may be disposed on a bottom surface of the under-bump pattern.

Abstract: A semiconductor package includes a first redistribution substrate, a first semiconductor chip mounted on the first redistribution substrate, a first molding layer on the first redistribution substrate and covering a top surface and lateral surfaces of the first semiconductor chip, a second redistribution substrate on the first molding layer, and an adhesive film between the second redistribution substrate and the first molding layer. The adhesive film is spaced apart from the first semiconductor chip and covers a top surface of the first molding layer. A lateral surface of the adhesive film is coplanar with a lateral surface of the second redistribution substrate.