Abstract: The present invention relates to a novel benzopyran derivative useful for preparing a drug for treating cancer, and more specifically, to a novel benzopyran derivative which is a micromolecule having a macrophage inhibitory effect and is useful for preparing a drug for cancer treatment. The drug particularly inhibits the differentiation of immune macrophages to stimulate the immune system, and thus is useful for treating immune-related cancers.

Abstract: A photovoltaic power generation module may include a ball lens that receives a medium from the outside or outputs a medium to the outside, receives sunlight that proceeds thereto from the outside when a medium is introduced thereto, and focuses the medium on one focal point, a solar cell that is disposed at a point at which sunlight is focused by the ball lens and produces electric energy from the sunlight, a support part supporting the ball lens and the solar cell and that being rotatable in a preset direction, a first motor that moves the solar cell in a direction in which the solar cell becomes distant from or close to the ball lens, a second motor that rotates the solar cell in a direction ? on a spherical coordinate system, and a third motor that rotates the support part in a direction ? on the spherical coordinate system.

Abstract: A semiconductor device includes a lower pattern. A channel isolation structure and a field insulating layer contact the lower pattern. A gate structure is on the lower pattern, in contact with the channel isolation structure. A channel pattern is on the lower pattern, and includes sheet patterns, each being in contact with the channel isolation structure. A source/drain pattern contacts the channel pattern and the channel isolation structure. The channel isolation structure includes a first region contacting the gate structure and a second region contacting the source/drain pattern. The second region of the channel isolation structure includes portions whose widths increase as a distance from a bottom surface of the field insulating layer increases.

Abstract: A muscular strength assisting apparatus includes a muscular strength assisting portion that assists a user's muscular strength and a first connecting link including one side connected to one side of the muscular strength assisting portion and an opposite side rotatable relative to a shoulder of the user about a first rotation axis. The muscular strength assisting portion includes an upper arm module that assists muscular strength of an upper arm of the user and a link assembly including one side connected to one side of the upper arm module to be rotatable about a second rotation axis non-parallel to the first rotation axis and an opposite side disposed adjacent to a portion of a body of the user to be supported on the user.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber in which a process with respect to a substrate is performed, a susceptor which is installed in the chamber and on which the substrate is placed, a plurality of lift pins passing through the susceptor to support the substrate, and a plurality of protection plugs protruding from a bottom surface of the susceptor to surround a portion of each of the lift pins protruding from the bottom surface of the susceptor.

Abstract: Disclosed is an organic light emitting device which includes a heterocyclic compound of Chemical Formula 1 in a light emitting device and a compound of Chemical Formula 2 in a hole transport layer.

Abstract: A multilayer electronic component includes a body including a capacitance formation portion including a dielectric layer and internal electrodes alternately disposed in a first direction, and a cover portion disposed on both surfaces of the capacitance formation portion opposing each other in the first direction; and an external electrode disposed on the body and connected to the internal electrode, wherein the cover portion includes polydopamine.

Abstract: There is provided a communication device. The communication device may comprise one or more processors; a communication interface; and a memory that stores a computer program executed by the one or more processors, wherein the computer program includes instructions for operations of: forming a general security channel according to a first transport layer security (TLS) protocol that does not support a post-quantum cryptography algorithm with another communication device; forming a communication channel of an application layer (L7) with another communication device through the general security channel; forming a quantum security channel by performing a handshake procedure according to a second TLS protocol that supports the post-quantum cryptography algorithm with another communication device through the communication channel; and communicating with another communication device through the quantum security channel.

Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.

Abstract: A semiconductor device includes a first and second channel separation structures extending in a first direction and spaced apart from each other in a second direction, first gate structures spaced apart from each other in the first direction between the first and second channel separation structures and in contact with the first and second channel separation structures, first and second channel patterns including first and second sheet patterns, respectively, spaced apart from each other in a third direction and in contact with the corresponding first and second channel separation structures, first and second source/drain patterns between the first and second channel separation structures, the first source/drain patterns in contact with the first channel patterns and the first channel separation structure, the second source/drain patterns in contact with the second channel patterns and the second channel separation structure, and first gate separation structures between the first and second source/drain patte

Abstract: A semiconductor device includes: a substrate, an active pattern extending in a first horizontal direction on the substrate, a plurality of nanosheets spaced apart from each other and stacked in a vertical direction on the active pattern, a gate electrode extending in a second horizontal direction different from the first horizontal direction on the active pattern, the gate electrode surrounding the plurality of nanosheets, a source/drain region disposed on at least one side of the gate electrode on the active pattern, the source/drain region including a first layer doped with a metal, and a second layer disposed on the first layer, and an inner spacer disposed between the gate electrode and the first layer, between each of the plurality of nanosheets, the inner spacer in contact with the first layer, the inner spacer including a metal oxide formed by oxidizing the same material as the metal.

Abstract: According to a preferred embodiment of the present disclosure, a project management device includes: a division unit configured to divide a project into n construction work packages (CWPs) based on a construction type constituting the project, a minimum unit area for managing the project, and design information; and a display unit configured to classify the n CWPs according to construction statuses and work front statuses and display the n CWPs in a grid form.

Abstract: A display device includes a display panel, a support film, and a polymer layer. The display panel includes a display area comprising a first area that is bendable, and a non-display area adjacent to the display area. The support film is coupled to a bottom surface of the display panel. The support film includes a first groove overlapping with the first area. The polymer layer is disposed in the first groove. The polymer layer includes a material with higher flexibility than the support film. Angles formed by the top surface of the support film and inner sides of the support film defining the first groove are acute angles.

Abstract: A semiconductor device may include a substrate, an active pattern extended in a first horizontal direction on the substrate, a plurality of nanosheets stacked and spaced apart from each other in a vertical direction on the active pattern, a gate electrode extended in a second horizontal direction different from the first horizontal direction on the active pattern, the gate electrode surrounding the plurality of nanosheets, a source/drain region on both sides of the plurality of nanosheets in the first horizontal direction on the active pattern, a gate insulating layer between the plurality of nanosheets and the gate electrode, and a doping layer between the plurality of nanosheets and the gate insulating layer, the doping layer including silicon (Si) or silicon germanium (SiGe) and doped with a doping material, at least a portion of the doping layer overlapping an uppermost nanosheet of the plurality of nanosheets in the first horizontal direction.

Abstract: Disclosed are a dual modulator of mGluR5 and 5-HT2AR (5-HT2A receptor), and use thereof. More specifically, disclosed are a compound which acts as modulator of mGluR5 and an antagonist of 5-HT2AR at the same time, and use thereof as therapeutic agent for pain.

Abstract: A method for providing metadata sharing service may include obtaining a sharing event for a predetermined range path based on a current location of a first target object, determining whether a second original name of a second target object previously registered with a name duplicating with a first original name of the first target object according to the sharing event exists in a sharing table, generating and registering a first unique name different from a second unique name for the second original name of the second target object in the sharing table in response to the existence of a second original name previously registered with a name duplicating with the first original name, and sharing a predetermined range path based on a current location of a first target object of the first unique name according to the sharing event through a virtual drive.

Abstract: Disclosed are a dual modulator of mGluR5 and 5-HT2AR (5-HT2A receptor), and use thereof. More specifically, disclosed are a compound which acts as modulator of mGluR5 and an antagonist of 5-HT2AR at the same time, and use thereof as therapeutic agent for pain.

Abstract: According to a preferred embodiment of the present disclosure, a project management device includes: a division unit configured to divide a project into n construction work packages (CWPs) based on a construction type constituting the project, a minimum unit area for managing the project, and design information; and a display unit configured to classify the n CWPs according to construction statuses and work front statuses and display the n CWPs in a grid form.

Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.