Patents by Inventor Hyo-Jin Kim

Hyo-Jin Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210111281
    Abstract: A semiconductor device includes first and second fin-shaped patterns disposed on a substrate and extending in a first direction, first and second channel layers disposed on the first and second fin-shaped patterns, first and second etch stop layers disposed inside the first and second channel layers, first and second gate structures extending in a second direction different from the first direction on the first channel layer with a first recess formed therebetween, third and fourth gate structures extending in the second direction on the second channel layer with a second recess formed therebetween, the first recess having a first width in the first direction and having a first depth in a third direction perpendicular to the first and second directions, the second recess having a second width different from the first width in the first direction, and having a second depth equal to the first depth in the third direction.
    Type: Application
    Filed: July 21, 2020
    Publication date: April 15, 2021
    Inventors: Hyo Jin Kim, Dong Woo Kim, Sang Moon Lee, Seung Hun Lee
  • Patent number: 10968467
    Abstract: The present invention relates to a novel variant RNA polymerase sigma factor 70 (?70) polypeptide, a polynucleotide encoding the same, a microorganism containing the polypeptide, and a method for producing L-threonine by using the microorganism.
    Type: Grant
    Filed: June 20, 2019
    Date of Patent: April 6, 2021
    Assignee: CJ CHEILJEDANG CORPORATION
    Inventors: Ji Sun Lee, Kwang Ho Lee, Hyo Jin Kim, Keun Chul Lee, Young Bin Hwang
  • Publication number: 20210098377
    Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including gate structures on a substrate; source/drain layers on portions of the substrate that are adjacent the gate structures, respectively; first contact plugs contacting upper surfaces of the source/drain layers, respectively; a second contact plug contacting one of the gate structures, a sidewall of the second contact plug being covered by an insulating spacer; and a third contact plug commonly contacting an upper surface of at least one of the gate structures and at least one of the first contact plugs, at least a portion of a sidewall of the third contact plug not being covered by an insulating spacer.
    Type: Application
    Filed: December 14, 2020
    Publication date: April 1, 2021
    Inventors: Hyo-Jin KIM, Chang-Hwa KIM, Hwi-Chan JUN, Chul-Hong PARK, Jae-Seok YANG, Kwan-Young CHUN
  • Patent number: 10953054
    Abstract: Disclosed is a composition comprising a Sargassum horneri extract for alleviating lung injury or respiratory disease.
    Type: Grant
    Filed: September 4, 2019
    Date of Patent: March 23, 2021
    Assignee: JEJU NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Young-Heun Jee, You-Jin Jeon, Hyun-Jung Kim, Ji-Yeon Chun, Areum Kim, Hyo-Jin Kim
  • Patent number: 10957373
    Abstract: A semiconductor memory device includes a memory cell array including memory cells, a row decoder connected to the memory cell array through first conductive lines, write drivers and sense amplifiers connected to the memory cell array through second conductive lines, a voltage generator that supplies a first voltage to the row decoder and supplies a second voltage to the write drivers and sense amplifiers, and a data buffer that is connected to the write drivers and sense amplifiers and transfers data between the write drivers and sense amplifiers and an external device. At least one of the row decoder, the write drivers and sense amplifiers, the voltage generator, and the data buffer includes a first ferroelectric capacitor to amplify a voltage.
    Type: Grant
    Filed: May 31, 2019
    Date of Patent: March 23, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Keun Hwi Cho, Seunghan Park, Hyo-Jin Kim, Gukil An
  • Patent number: 10916545
    Abstract: A semiconductor device includes a substrate having a first region and a second region, a first transistor including a single first active fin disposed in the first region, a first gate electrode intersecting the single first active fin, and a single first source/drain layer disposed in the first recess of the single first active fin, and a second transistor including a plurality of second active fins disposed in the second region, a second gate electrode intersecting the plurality of second active fins, and a plurality of second source/drain layers disposed in the second recesses of the plurality of second active fins. The single first active fin and the plurality of second active fins may have a first conductivity type, and a depth of the first recess may be less than a depth of each of the second recesses.
    Type: Grant
    Filed: March 15, 2019
    Date of Patent: February 9, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyo Jin Kim, Dae Won Ha, Yoon Moon Park, Keun Hwi Cho
  • Patent number: 10908461
    Abstract: The exemplary embodiments relate generally to a display device that may include: a first substrate and a second substrate, each including a transparent encapsulation area; an outer sealant along a side of the transparent encapsulation area; a pattern part disposed on the first substrate and extending in a direction parallel to the outer sealant; and a transparent sealant adjacent to the pattern part and extending in a direction parallel to the pattern part, and a manufacturing method thereof.
    Type: Grant
    Filed: July 18, 2019
    Date of Patent: February 2, 2021
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Hyoung-Joon Kim, Hyo Jin Kim, Kap Soo Yoon, Jeong Hyun Lee, Tae Hee Lee, So Young Jun, Soong Won Cho, Jeong Uk Heo
  • Publication number: 20210013200
    Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.
    Type: Application
    Filed: September 29, 2020
    Publication date: January 14, 2021
    Inventors: Seung Seok HA, Hyun Seung SONG, Hyo Jin KIM, Kyoung Mi PARK, Guk Il AN
  • Publication number: 20210002682
    Abstract: The present disclosure relates to modified homoserine dehydrogenase and a method for producing a homoserine-derived L-amino acid using the same.
    Type: Application
    Filed: May 21, 2019
    Publication date: January 7, 2021
    Inventors: Hyo Jin KIM, Lan HUH, Sang Jo LIM, Hyun Ah KIM, Hyoung Joon KIM, Chang il SEO, Seung Bin LEE, Ji Sun LEE
  • Patent number: 10886227
    Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including gate structures on a substrate; source/drain layers on portions of the substrate that are adjacent the gate structures, respectively; first contact plugs contacting upper surfaces of the source/drain layers, respectively; a second contact plug contacting one of the gate structures, a sidewall of the second contact plug being covered by an insulating spacer; and a third contact plug commonly contacting an upper surface of at least one of the gate structures and at least one of the first contact plugs, at least a portion of a sidewall of the third contact plug not being covered by an insulating spacer.
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: January 5, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyo-Jin Kim, Chang-Hwa Kim, Hwi-Chan Jun, Chui-Hong Park, Jae-Seok Yang, Kwan-Young Chun
  • Patent number: 10884433
    Abstract: A computer-implemented method, system, and computer program product are provided for a stabilization system utilizing pose estimation in an aerial drone. The method includes receiving, by a pose estimation system, a plurality of images from one or more cameras. The method also includes predicting, by the pose estimation system, a pose from the score map and a combined feature map, the combined feature map correlated from a pair of the plurality of images. The method additionally includes moving, by a propulsion system, the aerial drone responsive to the pose.
    Type: Grant
    Filed: August 10, 2018
    Date of Patent: January 5, 2021
    Inventors: Quoc-Huy Tran, Manmohan Chandraker, Hyo Jin Kim
  • Patent number: 10852749
    Abstract: A computer-implemented method, system, and computer program product are provided for pose estimation. The method includes receiving, by a processor, a plurality of images from one or more cameras. The method also includes generating, by the processor with a feature extraction convolutional neural network (CNN), a feature map for each of the plurality of images. The method additionally includes estimating, by the processor with a feature weighting network, a score map from a pair of the feature maps. The method further includes predicting, by the processor with a pose estimation CNN, a pose from the score map and a combined feature map. The method also includes controlling an operation of a processor-based machine to change a state of the processor-based machine, responsive to the pose.
    Type: Grant
    Filed: August 10, 2018
    Date of Patent: December 1, 2020
    Inventors: Quoc-Huy Tran, Manmohan Chandraker, Hyo Jin Kim
  • Patent number: 10828253
    Abstract: The present disclosure relates to a composition for injection, which comprises a pharmaceutically acceptable salt of a compound represented by Formula 1 and one or more selected from mannitol, trehalose, lactose and glucose as a stabilizing agent, having improved stability.
    Type: Grant
    Filed: July 6, 2018
    Date of Patent: November 10, 2020
    Assignee: HK INNO.N CORPORATION
    Inventors: Hyo Jin Kim, Sung Jun Kim, Min Kyoung Lee, Sung Ah Lee, Mi Young Yoon
  • Patent number: 10825809
    Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.
    Type: Grant
    Filed: March 1, 2019
    Date of Patent: November 3, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung Seok Ha, Hyun Seung Song, Hyo Jin Kim, Kyoung Mi Park, Guk Il An
  • Publication number: 20200340023
    Abstract: The present invention relates to a novel variant RNA polymerase sigma factor 70 (?70) polypeptide, a polynucleotide encoding the same, a microorganism containing the polypeptide, and a method for producing L-threonine by using the microorganism.
    Type: Application
    Filed: July 15, 2020
    Publication date: October 29, 2020
    Inventors: Ji Sun LEE, Kwang Ho LEE, Hyo Jin KIM, Keun Chul LEE, Young Bin HWANG
  • Patent number: D900054
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: October 27, 2020
    Assignee: Harman International Industries, Incorporated
    Inventor: Hyo Jin Kim
  • Patent number: D901178
    Type: Grant
    Filed: December 27, 2018
    Date of Patent: November 10, 2020
    Assignee: Harman International Industries, Incorporated
    Inventors: Hyo Jin Kim, Effrosini A. Karayiannis, Derek Campbell
  • Patent number: D913991
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: March 23, 2021
    Assignee: Harman International Industries, Incorporated
    Inventor: Hyo Jin Kim
  • Patent number: D914639
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: March 30, 2021
    Assignee: Harman International Industries, Incorporated
    Inventor: Hyo Jin Kim
  • Patent number: D916052
    Type: Grant
    Filed: July 12, 2019
    Date of Patent: April 13, 2021
    Assignee: Harman International Industries, Incorporated
    Inventor: Hyo Jin Kim