Abstract: A semiconductor device includes a lower pattern extending in a first direction, a first blocking structure which is on the lower pattern and includes at least one first blocking film comprising an oxygen-doped crystalline silicon film, a source/drain pattern on the first blocking structure, and a gate structure which extends in a second direction on the lower pattern and includes a gate electrode and a gate insulating film. Related fabrication methods are also discussed.

Abstract: A semiconductor device includes a substrate, a lower active pattern which is spaced apart from the substrate and extends in a first direction, an upper active pattern on the lower active pattern, the upper active pattern being spaced apart from the lower active pattern and extending in the first direction, a gate structure on the substrate, the gate structure extending in a second direction intersecting the first direction, and a cutting pattern on the substrate, the cutting pattern extending in the first direction to cut the gate structure. The gate structure includes a lower gate electrode through which the lower active pattern penetrates, an upper gate electrode which is connected to the lower gate electrode and through which the upper active pattern penetrates, and an insulating pattern on one side of the cutting pattern, the insulating pattern being arranged with the upper gate electrode along the second direction.

Abstract: A pharmaceutical composition for preventing or treating cancer, which is associated with a KRAS mutation and exhibits resistance to an EGFR-targeted therapeutic agent is disclosed. The pharmaceutical composition can be useful for treatment of patients with cancer which has the KRAS mutation and exhibits resistance to cetuximab that is an anticancer therapeutic agent. A method for providing information on an anticancer treatment and/or enhancing cancer treatment by identifying a KRAS mutation and optionally additionally a RON mutation are disclosed.

Abstract: In one embodiment, an AR/VR system includes a social-networking application installed on the AR/VR system, which allows a user to access on online social network, including communicating with the user's social connections and interacting with content objects on the online social network. The AR/VR system also includes an AR/VR application, which allows the user to interact with an AR/VR platform by providing user input to the AR/VR application via various modalities. Based on the user input, the AR/VR platform generates responses and sends the generated responses to the AR/VR application, which then presents the responses to the user at the AR/VR system via various modalities.

Abstract: Disclosed are a method of manufacturing cage for a constant velocity joint and a cage for a constant velocity joint manufactured using the same for providing a cage having improved hardness, strength, and elongation while having a structure with a uniform core part and surface and for ensuring economic feasibility by reducing manufacturing time. The method includes a cutting operation of forming a structure having an outer shape by cutting a cylindrical pipe, forming an outer circumference of the cut structure to have a curved surface thereon, performing a turning operation on a surface of the formed structure, a punching operation of forming a window in the surface of the structure on which the turning operation is performed, a broaching operation of processing an edge of the window formed via punching, and a heat treatment operation of fully hardening the completely broached cage via austempering.

Abstract: A lensmeter capable of measuring near-infrared ray transmittance of an eyeglass lens by adding a near-infrared ray measurement function to the lensmeter. The lensmeter includes a near-infrared ray transmittance measuring unit that includes a light emitting unit including a near-infrared ray light source for irradiating a measured lens with a near-infrared ray; and a light receiving unit including a near-infrared ray sensor for measuring a near-infrared ray transmittance of the measured lens by detecting an intensity of the near-infrared ray passing through the measured lens, and is located at one end of a housing of the lensmeter.

Abstract: A liquid crystal display includes a first substrate including: a display area including a plurality of pixels on the first substrate, a non-display area which is disposed on an outside of the display area and in which a dummy wire is disposed on the first substrate, and an image input hole which is defined therein in the non-display area and in which an image input device is disposed, a second substrate facing the first substrate and including a display area and a non-display area corresponding to those of the first substrate, a liquid crystal layer interposed between the first and second substrates, and a sealant which is in the non-display area of the first and second substrates and seals the liquid crystal layer between the first and second substrates. The dummy wire is disposed near the image input hole.

Abstract: A semiconductor device includes a lower pattern extending in a first direction, and protruding from a substrate in a second direction, a lower insulating pattern on the lower pattern, and in contact with an upper surface of the lower pattern, a channel pattern on the lower insulating pattern, a plurality of gate structures on the lower pattern and spaced apart from each other in the first direction, wherein each of the plurality of gate structures includes a gate electrode and a gate insulating film, and a source/drain pattern disposed on the lower pattern, and connected to the channel pattern. A vertical level of a lowermost portion of the source/drain pattern is lower than a vertical level of a bottom surface of the lower insulating pattern. The gate electrode overlaps the lower insulating pattern in the second direction.

Abstract: A display device includes a display panel, a support film, and a polymer layer. The display panel includes a display area comprising a first area that is bendable, and a non-display area adjacent to the display area. The support film is coupled to a bottom surface of the display panel. The support film includes a first groove overlapping with the first area. The polymer layer is disposed in the first groove. The polymer layer includes a material with higher flexibility than the support film. Angles formed by the top surface of the support film and inner sides of the support film defining the first groove are acute angles.

Abstract: Disclosed is a method of manufacturing a III-V group nanorod solar cell so that a substrate can be reused. The method may includes a first growth process of forming an etch stop layer on a substrate, a second growth process of growing a sacrificial layer on the etch stop layer, a third growth process of forming, on the sacrificial layer, a pattern layer including an opening at each location at which each nanorod solar cell is able to be grown, a fourth growth process of growing the nanorod solar cells on the sacrificial layer through the openings within the pattern layer, a forming process of forming a solar cell protection layer on outsides of the nanorod solar cells, a first etching process of etching the sacrificial layer and the pattern layer, and a second etching process of etching the etch stop layer.

Abstract: An analysis apparatus includes a laser irradiation unit that irradiates a laser beam, a beam scanner that moves along a pattern to change a position at which the laser beam is irradiated to a sample, a first lens through which a light provided from the sample is transmitted, an optical member to which the light that passes through the first lens is provided and through which a pin hole is defined, and a detection unit that detects a detection light passed through the pin hole.

Abstract: An apparatus for manufacturing a display device includes a sheet portion where a bending line extending along a first direction is defined to overlap a portion of the sheet portion; a panel attachment member disposed on the sheet portion; a magnet portion disposed on the sheet portion and including a first magnet portion positioned on a first side in a second direction intersecting the first direction and a second magnet portion positioned on a second side in the second direction with respect to the bending line; a pad spaced apart from the panel attachment member with the sheet portion interposed therebetween and positioned between the first magnet portion and the second magnet portion; and a core disposed in the pad, where the first magnet portion and the second magnet portion are symmetrical to each other with respect to the bending line.

Abstract: Semiconductor devices are provided. A semiconductor device includes a fin structure including a stress structure and a semiconductor region that are sequentially stacked on a substrate. The semiconductor device includes a field insulation layer on a portion of the fin structure. The semiconductor device includes a gate electrode on the fin structure. Moreover, the stress structure includes an oxide.