Patents by Inventor Hyo Sook Jang

Hyo Sook Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230074734
    Abstract: An electroluminescent device includes a first electrode; a second electrode spaced apart from the first electrode; and a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer includes semiconductor nanoparticles, wherein the semiconductor nanoparticles do not include cadmium, the semiconductor nanoparticles have a core shell structure, the semiconductor nanoparticles include zinc, selenium, tellurium, and sulfur, wherein in a two dimensional image obtained by an electron microscopy analysis, the semiconductor nanoparticles show an average value of a circularity defined by the following equation of greater than or equal to about 0.8 and less than or equal to about 1: circularity = 4 ? ? × Area [ Perimeter ] 2 wherein Area is an area of a two dimensional image of an individual semiconductor nanoparticle, and Perimeter is a circumference of the two dimensional image of the individual semiconductor nanoparticle.
    Type: Application
    Filed: August 25, 2022
    Publication date: March 9, 2023
    Inventors: Yuho WON, Sung Woo KIM, Eun Joo JANG, Hyo Sook JANG
  • Patent number: 11566176
    Abstract: A semiconductor nanocrystal particle including a core including a first semiconductor nanocrystal including zinc (Zn) and sulfur (S), selenium (Se), tellurium (Te), or a combination thereof; and a shell including a second semiconductor nanocrystal disposed on at least a portion of the core, wherein the core includes a dopant of a Group 1A element, a Group 2A element, or a combination thereof, and the semiconductor nanocrystal particle exhibits a maximum peak emission in a wavelength region of about 440 nanometers (nm) to about 470 nm.
    Type: Grant
    Filed: April 17, 2020
    Date of Patent: January 31, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jeong Hee Lee, Hyo Sook Jang, Sung Woo Kim, Jin A Kim, Tae Hyung Kim, Yuho Won, Eun Joo Jang, Yong Seok Han
  • Patent number: 11567360
    Abstract: A backlight unit for a liquid crystal display device, the backlight unit including: an light emitting diode (“LED”) light source; a light conversion layer disposed separate from the LED light source to convert light emitted from the LED light source to white light and to provide the white light to the liquid crystal panel; and a light guide panel disposed between the LED light source and the light conversion layer, wherein the light conversion layer includes a semiconductor nanocrystal and a polymer matrix, and wherein the polymer matrix includes a first polymerized polymer of a first monomer including at least two thiol (—SH) groups, each located at a terminal end of the first monomer, and a second monomer including at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer.
    Type: Grant
    Filed: August 10, 2020
    Date of Patent: January 31, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyun A Kang, Eun Joo Jang, Hyo Sook Jang, Shin Ae Jun
  • Patent number: 11563143
    Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.
    Type: Grant
    Filed: August 20, 2020
    Date of Patent: January 24, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong Seok Han, Sung Woo Kim, Jin A Kim, Tae Hyung Kim, Kun Su Park, Yuho Won, Jeong Hee Lee, Eun Joo Jang, Hyo Sook Jang
  • Patent number: 11512252
    Abstract: A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.
    Type: Grant
    Filed: August 30, 2016
    Date of Patent: November 29, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Garam Park, Eun Joo Jang, Yongwook Kim, Jihyun Min, Hyo Sook Jang, Shin Ae Jun, Taekhoon Kim, Yuho Won
  • Patent number: 11505740
    Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.
    Type: Grant
    Filed: September 30, 2021
    Date of Patent: November 22, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yuho Won, Nayoun Won, Sungwoo Hwang, Eun Joo Jang, Soo Kyung Kwon, Yong Wook Kim, Jihyun Min, Garam Park, Shang Hyeun Park, Hyo Sook Jang, Shin Ae Jun, Yong Seok Han
  • Patent number: 11499098
    Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: November 15, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung Woo Kim, Jin A Kim, Tae Hyung Kim, Kun Su Park, Yuho Won, Jeong Hee Lee, Eun Joo Jang, Hyo Sook Jang, Yong Seok Han, Heejae Chung
  • Publication number: 20220348824
    Abstract: A quantum dot having a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium, and a semiconductor nanocrystal shell disposed on the surface of the core, the shell including zinc, selenium, and sulfur. The quantum dot is configured to emit green light, the quantum dot does not include cadmium, and the quantum dot has a mole ratio Te:Se of tellurium relative to selenium of greater than about 0.05 and less than or equal to about 0.5:1. A method of producing the quantum dot and an electronic device including the same.
    Type: Application
    Filed: July 18, 2022
    Publication date: November 3, 2022
    Inventors: Yuho WON, Yong Wook KIM, Eun Joo JANG, Hyo Sook JANG
  • Patent number: 11482686
    Abstract: A light emitting device including a first electrode and a second electrode spaced from each other, and, a light emitting film between the first electrode and the second electrode, wherein the light emitting film has a first surface facing the second electrode and a second surface opposite thereto, the light emitting film includes a quantum dot layer including a plurality of quantum dots and a matrix including a metal chalcogenide, the plurality of quantum dots includes selenium, the matrix covers at least a portion of the quantum dot layer, the metal chalcogenide comprises zinc and sulfur, and in an X-ray photoelectron spectroscopic analysis of the first surface of the light emitting film, a mole ratio of zinc with respect to selenium is greater than or equal to about 2:1 and a mole ratio of sulfur with respect to selenium is greater than or equal to about 1.1:1.
    Type: Grant
    Filed: October 30, 2020
    Date of Patent: October 25, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kwanghee Kim, Moon Gyu Han, Eun Joo Jang, Hyo Sook Jang
  • Publication number: 20220325178
    Abstract: A quantum dot device and an electronic device. The quantum dot device includes a first electrode and a second electrode, a light emitting layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the second electrode and the light emitting layer and enhancing transport of first charge carriers from the second electrode to the light emitting layer, and a buffer layer disposed between the light emitting layer and the first charge auxiliary layer and enhancing extraction of second charge carriers from the light emitting layer.
    Type: Application
    Filed: March 28, 2022
    Publication date: October 13, 2022
    Inventors: Heejae LEE, Soonmin CHA, Tae Hyung KIM, Dae-Hee LEE, Eun Joo JANG, Hyo Sook JANG, Dae Young CHUNG, Moon Gyu HAN
  • Publication number: 20220302402
    Abstract: An electroluminescent display device includes first and second electrode facing each other; and a quantum dot emission layer disposed between the first and second electrodes, wherein the quantum dot emission layer includes a red emission layer disposed in a red pixel, a green emission layer disposed in a green pixel, and a blue emission layer disposed in a blue pixel, wherein the red emission layer includes red light emitting quantum dots, the green emission layer includes green light emitting quantum dots, the blue emission layer includes blue light emitting quantum dots, and wherein the blue emission layer is configured to exhibit first emission spectrum including a blue luminescent peak and a first luminescent peak different from the blue luminescent peak, wherein the green emission layer is configured to exhibit a second emission spectrum including a green luminescent peak and a second luminescent peak different from the green luminescent peak.
    Type: Application
    Filed: March 17, 2022
    Publication date: September 22, 2022
    Inventors: Sanghyun Sohn, Eun Joo Jang, Tae Hyung Kim, Hyo Sook Jang
  • Publication number: 20220288930
    Abstract: An inkjet printhead includes a head body in which a first fine channel that is connected to an ink inlet and thus guides an inflow of ink, a second fine channel that is disposed below the first fine channel, communicated with the first fine channel through a connection via hole, and guides an outflow of the ink by being connected to an ink outlet, and a nozzle that is opened downward from the second fine channel are defined, and a micro heater that is disposed closer to the connection via hole in an upper portion of the first fine channel than to an end of the first fine channel where the first fine channel is connected to the ink inlet or an end of the second fine channel where the second fine channel is connected to the ink outlet.
    Type: Application
    Filed: August 5, 2021
    Publication date: September 15, 2022
    Inventors: Tae Ho KIM, Eun Joo JANG, Tae Hyung KIM, Hyo Sook JANG, You Jung CHUNG
  • Publication number: 20220246876
    Abstract: A semiconductor nanocrystal particle represented by Chemical Formula 1 and having a full width at half maximum (FWHM) of less than or equal to about 30 nanometers (nm) in the emission wavelength spectrum is provided: AxA?(3+??x)D(2+?)E(9+?). ??Chemical Formula 1 In Chemical Formula 1, A is a first metal including Rb, Cs, or a combination thereof, A? is an organic substance derived from an ammonium salt, an organic material derived from an organic ligand, or an organic material including a combination thereof, D is a second metal including Sb, Bi, or a combination thereof E is Cl, Br, I, or a combination thereof, 1<x?3, ?1<?<1, 3+??x>0, ?1<?<1, and ?1<?<1.
    Type: Application
    Filed: April 25, 2022
    Publication date: August 4, 2022
    Inventors: Jihyun MIN, Eun Joo JANG, Edward H. SARGENT, Hyo Sook JANG, Makhsud I. SAIDAMINOV, Sjoerd HOOGLAND, Ankit JAIN, Andrew JOHNSTON, Oleksandr VOZNYY
  • Publication number: 20220243125
    Abstract: A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite: (Absfirst?Absvalley)/Absfirst=VD.
    Type: Application
    Filed: April 22, 2022
    Publication date: August 4, 2022
    Inventors: Hyo Sook JANG, Yuho WON, Sungwoo HWANG, Ji Yeong KIM, Eun Joo JANG
  • Patent number: 11390804
    Abstract: A quantum dot having a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium, and a semiconductor nanocrystal shell disposed on the surface of the core, the shell including zinc, selenium, and sulfur. The quantum dot is configured to emit green light, the quantum dot does not include cadmium, and the quantum dot has a mole ratio Te:Se of tellurium relative to selenium of greater than about 0.05 and less than or equal to about 0.5:1. A method of producing the quantum dot and an electronic device including the same.
    Type: Grant
    Filed: January 10, 2020
    Date of Patent: July 19, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yuho Won, Yong Wook Kim, Eun Joo Jang, Hyo Sook Jang
  • Publication number: 20220223765
    Abstract: An emissive nanocrystal particle includes a core including a first semiconductor nanocrystal including a Group III-V compound and a shell including a second semiconductor nanocrystal surrounding the core, wherein the emissive nanocrystal particle includes a non-emissive Group I element.
    Type: Application
    Filed: March 29, 2022
    Publication date: July 14, 2022
    Inventors: Yuho WON, Jihyun MIN, Eun Joo JANG, Hyo Sook JANG
  • Publication number: 20220213022
    Abstract: Provided is a compound represented by Chemical Formula 1 capable of manufacturing an EL device by inkjet printing. In Chemical Formula 1, n is an integer of greater than or equal to 3 and less than or equal to 10, X is a group represented by Chemical Formula 2 and a plurality of X's may be the same or different from each other, and Y is a group represented by Chemical Formula 3 and a plurality of Y's may be the same or different from each other.
    Type: Application
    Filed: December 23, 2021
    Publication date: July 7, 2022
    Inventors: Fumiaki KATO, Tomoyuki KIKUCHI, Hiroko ENDO, Keigo FURUTA, Keisuke KORAI, Mitsunori ITO, Naotoshi SUGANUMA, Takao MOTOYAMA, Dae Young CHUNG, Eun Joo JANG, Ha Il KWON, Hyo Sook JANG, Soonmin CHA, Tae Ho KIM
  • Publication number: 20220209152
    Abstract: A light-emitting device including a first electrically conducting layer, a second electrically conducting layer, and a light-emitting layer disposed between the first electrically conducting layer and the second electrically conducting layer, the light emitting layer including light emitting nanostructures, wherein the light emitting layer is configured to emit green light, the light-emitting layer do not include cadmium, lead, or a combination thereof, the light emitting nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide, the Group III-V compound includes indium, phosphorus, and optionally zinc, the zinc chalcogenide includes zinc, selenium, and sulfur, the light emitting nanostructures exhibit a zinc blende structure, and in a two dimensional image of the light emitting nanostructures obtained by an electron microscopy analysis, an average value of squareness of the light emitting nanostructures is gr
    Type: Application
    Filed: December 28, 2021
    Publication date: June 30, 2022
    Inventors: Yong Seok HAN, Eun Joo JANG, Hyo Sook JANG, Oul CHO, Jihyun MIN, Yuho WON
  • Publication number: 20220204844
    Abstract: A quantum dot including zinc, tellurium, selenium, and sulfur, wherein the quantum dot comprises a core and a shell disposed on the core, and wherein the quantum dot is a cadmium-free red light-emitting quantum dot and has an emission peak wavelength of greater than or equal to about 600 nanometers (nm), and efficiency of greater than or equal to about 50%.
    Type: Application
    Filed: December 22, 2021
    Publication date: June 30, 2022
    Inventors: Yuho WON, Hwea Yoon KIM, Jeong Hee LEE, Eun Joo JANG, Hyo Sook JANG
  • Publication number: 20220195110
    Abstract: A copolymer, including a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, or a combination thereof: wherein R1, R2, R3, X1, X2, and Ar1 are as provided herein.
    Type: Application
    Filed: December 22, 2021
    Publication date: June 23, 2022
    Inventors: Norihito ISHII, Takahiro FUJIYAMA, Masashi TSUJI, Naotoshi SUGANUMA, Yusaku KONISHI, Dae Young CHUNG, Eun Joo JANG, Ha Il KWON, Hyo Sook JANG, Soonmin CHA, Tae Ho KIM, Fumiaki KATO