Abstract: A process of synthesizing Ga—Se nanocrystals is provided, the process including: contacting a first precursor containing gallium with a second precursor containing selenium to obtain a Ga—Se single precursor; and reacting the Ga—Se single precursor in a solvent in the presence of a ligand compound, and optionally with a third precursor including an element (A) other than gallium and selenium, to prepare a Ga—Se nanocrystal represented by Chemical Formula 1: GaSexAy??[Chemical Formula 1] wherein x is about 1.1 to 3, and y is about 0.1 to 4.

Abstract: A nanocrystal particle including: a semiconductor material; boron and optionally fluorine, wherein the particle has an organic ligand bound to a surface thereof, the boron is present as being doped in the particle or as a metal boride and the fluorine is present as being doped in the particle or as a metal fluoride.

Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.

Abstract: A process of synthesizing Ga—Se nanocrystals is provided, the process including: contacting a first precursor containing gallium with a second precursor containing selenium to obtain a Ga—Se single precursor; and reacting the Ga—Se single precursor in a solvent in the presence of a ligand compound, and optionally with a third precursor including an element (A) other than gallium and selenium, to prepare a Ga—Se nanocrystal represented by Chemical Formula 1: GaSexAy ??[Chemical Formula 1] wherein x is about 1.1 to 3, and y is about 0.1 to 4.

Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.

Abstract: A process for preparing a quantum dot of a core-shell structure including obtaining a first mixture including first precursor including a first metal, a ligand compound, and a solvent; adding a second precursor and a particle including a first semiconductor nanocrystal to the first mixture to obtain a second mixture; and heating the second mixture up to a reaction temperature and performing a reaction between the first precursor and the second precursor to form a layer of a shell including a crystalline or amorphous material, during formation of the layer of the shell or after formation of the layer of the shell, wherein the process includes adding an organic solution including an ammonium fluorinated salt including a solid salt having a melting point of greater than or equal to about 110° C. to the second mixture.

Abstract: An emissive nanocrystal particle includes a core including a first semiconductor nanocrystal including a Group III-V compound and a shell including a second semiconductor nanocrystal surrounding the core, wherein the emissive nanocrystal particle includes a non-emissive Group I element.

Abstract: A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide

Abstract: An electronic device includes: an anode and a cathode facing each other; a quantum dot emission layer disposed between the anode and the cathode and including a plurality of quantum dots; and a light emitting source, wherein the quantum dot emission layer is configured to receive electrical energy from the anode and the cathode and to emit light having a first wavelength, wherein the quantum dot emission layer and the light emitting source are configured so that the light emitting source provides the quantum emission layer with light having a second wavelength, and the plurality of quantum dots are excited by the light having the second wavelength and emit light having a third wavelength, wherein the anode, the cathode, or a combination thereof is a light transmitting electrode, and the light of the first wavelength and the light of the third wavelength are emitted through the light transmitting electrode.

Abstract: A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide.

Abstract: A backlight unit for a liquid crystal display device, the backlight unit including: an light emitting diode (“LED”) light source; a light conversion layer disposed separate from the LED light source to convert light emitted from the LED light source to white light and to provide the white light to the liquid crystal panel; and a light guide panel disposed between the LED light source and the light conversion layer, wherein the light conversion layer includes a semiconductor nanocrystal and a polymer matrix, and wherein the polymer matrix includes a first polymerized polymer of a first monomer including at least to two thiol (—SH) groups, each located at a terminal end of the first monomer, and a second monomer including at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer.

Abstract: A composition comprising: a first monomer comprising at least three thiol groups, each located at a terminal end of the first monomer, wherein the first monomer is represented by the following Chemical Formula 1-1: a second monomer comprising at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer, wherein the second monomer is represented by the following Chemical Formula 2: wherein in Chemical Formulae 1 and 2 groups R2, Ra to Rd, Ya to Yd, L1? and L2, X and variables k3 and k4 are the same as described in the specification, and a first light emitting particle, wherein the first light emitting particle consists of a semiconductor nanocrystal comprising a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, or a combination thereof, wherein the first light emitting particle has a core/shell structure having a first semiconductor nanocrystal being surrounded by a second semiconductor nanocrystal, and the first semiconductor nanocrystal bein

Abstract: A backlight unit for a liquid crystal display device, the backlight unit including: an light emitting diode (“LED”) light source; a light conversion layer disposed separate from the LED light source to convert light emitted from the LED light source to white light and to provide the white light to the liquid crystal panel; and a light guide panel disposed between the LED light source and the light conversion layer, wherein the light conversion layer includes a semiconductor nanocrystal and a polymer matrix, and wherein the polymer matrix includes a first polymerized polymer of a first monomer including at least two thiol (—SH) groups, each located at a terminal end of the first monomer, and a second monomer including at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer.

Abstract: A composition comprising: a first monomer comprising at least three thiol groups, each located at a terminal end of the first monomer, wherein the first monomer is represented by the following Chemical Formula 1-1: a second monomer comprising at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer, wherein the second monomer is represented by the following Chemical Formula 2: wherein in Chemical Formulae 1 and 2 groups R2, Ra to Rd, Ya to Yd, L1? and L2, X and variables k3 and k4 are the same as described in the specification, and a first light emitting particle, wherein the first light emitting particle consists of a semiconductor nanocrystal comprising a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, or a combination thereof, wherein the first light emitting particle has a core/shell structure having a first semiconductor nanocrystal being surrounded by a second semiconductor nanocrystal, and the first semiconductor nanocrystal bei

Abstract: A quantum dot-polymer composite including a polymer matrix; and a plurality of quantum dots dispersed in the polymer matrix, wherein the quantum dot includes a core including a first semiconductor material; and a shell including a second semiconductor material disposed on the core, wherein the quantum dot is cadmium-free, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.

Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.

Abstract: A semiconductor nanocrystal and a preparation method thereof, where the semiconductor nanocrystal include a bare semiconductor nanocrystal and a water molecule directly bound to the bare semiconductor nanocrystal.

Abstract: A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.

Abstract: A film for a backlight unit including a semiconductor nanocrystal-polymer composite film including a semiconductor nanocrystal and a matrix polymer in which the semiconductor nanocrystal is dispersed, wherein the matrix polymer is a polymer produced by a polymerization of a multifunctional photo-curable oligomer, a mono-functional photo-curable monomer, and a multifunctional photo-curable cross-linking agent, the multifunctional photo-curable oligomer has an acid value of less than or equal to about 0.1 mg of KOH/g, and a content (A1) of a first structural unit derived from the multifunctional photo-curable oligomer, a content (A2) of a second structural unit derived from the mono-functional photo-curable monomer, and a content (A3) of a third structural unit derived from the multifunctional photo-curable cross-linking agent satisfy Equation 1: A1<(A2+A3).

Abstract: A semiconductor nanocrystal and a preparation method thereof, where the semiconductor nanocrystal include a bare semiconductor nanocrystal and a water molecule directly bound to the bare semiconductor nanocrystal.