Patents by Inventor Hyo Sook Jang

Hyo Sook Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220149311
    Abstract: A method of manufacturing a light emitting device that includes providing a first electrode, forming a light emitting layer including quantum dots on the first electrode, forming an electron auxiliary layer on the light emitting layer, and forming a second electrode on the electronic auxiliary layer. The forming of the electron auxiliary layer includes forming an electron auxiliary layer including a plurality of metal oxide nanoparticles, and contacting the plurality of metal oxide nanoparticles with a base including a hydroxyl group (OH).
    Type: Application
    Filed: November 1, 2021
    Publication date: May 12, 2022
    Inventors: Hongkyu SEO, Tae Hyung KIM, Eun Joo JANG, Won Sik YOON, Hyo Sook JANG, Oul CHO
  • Publication number: 20220137286
    Abstract: A light source includes a light emitting element which emits light, and a light conversion layer which converts the light emitted from the light emitting element into white light and emits the white light, where the light conversion layer includes a resin and a quantum dot material mixed with the resin, and a red apex of a color region of the white light is positioned in a region of 0.65<Cx<0.69 and 0.29<Cy<0.3370 in color coordinates, and a green apex of a color region of the white light is positioned in a region of 0.17<Cx<0.31 and 0.61<Cy<0.70 in the color coordinates.
    Type: Application
    Filed: January 14, 2022
    Publication date: May 5, 2022
    Inventors: Tae Hyung KIM, Eun Joo JANG, Shin Ae JUN, Hyun A KANG, Yongwook KIM, Na Youn WON, Hyo Sook JANG
  • Publication number: 20220140272
    Abstract: A light emitting device and a production method thereof. The light emitting device includes a light emitting layer including a plurality of quantum dots, and an electron auxiliary layer disposed on the light emitting layer, the electron auxiliary layer configured to transport electrons, inject electrons into the light emitting layer, or a combination thereof, wherein the electron auxiliary layer includes a plurality of metal oxide nanoparticles and a nitrogen-containing metal complex. The metal oxide nanoparticles include zinc and optionally a dopant metal, the dopant metal includes Mg, Co, Ga, Ca, Zr, W, Li, Ti, Y, Al, Co, or a combination thereof and a mole ratio of nitrogen to zinc in the electron auxiliary layer is greater than or equal to about 0.001:1.
    Type: Application
    Filed: November 1, 2021
    Publication date: May 5, 2022
    Inventors: Hyo Sook JANG, Eun Joo JANG, Ilyoung LEE, Tae Ho KIM, Kun Su PARK, Jun-Mo YOO
  • Patent number: 11312901
    Abstract: A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite: (Absfirst?Absvalley)/Absfirst=VD.
    Type: Grant
    Filed: April 9, 2021
    Date of Patent: April 26, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyo Sook Jang, Yuho Won, Sungwoo Hwang, Ji Yeong Kim, Eun Joo Jang
  • Patent number: 11312904
    Abstract: A semiconductor nanocrystal particle represented by Chemical Formula 1 and having a full width at half maximum (FWHM) of less than or equal to about 30 nanometers (nm) in the emission wavelength spectrum is provided: AxA?(3+??x)D(2+?)E(9+?).??Chemical Formula 1 In Chemical Formula 1, A is a first metal including Rb, Cs, or a combination thereof, A? is an organic substance derived from an ammonium salt, an organic material derived from an organic ligand, or an organic material including a combination thereof, D is a second metal including Sb, Bi, or a combination thereof E is Cl, Br, I, or a combination thereof, 1<x?3, ?1<?<1, 3+??x>0, ?1<?<1, and ?1<?<1.
    Type: Grant
    Filed: August 6, 2020
    Date of Patent: April 26, 2022
    Assignees: SAMSUNG ELECTRONICS CO., LTD., THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTO
    Inventors: Jihyun Min, Eun Joo Jang, Edward H. Sargent, Hyo Sook Jang, Makhsud I. Saidaminov, Sjoerd Hoogland, Ankit Jain, Andrew Johnston, Oleksandr Voznyy
  • Patent number: 11316079
    Abstract: An emissive nanocrystal particle includes a core including a first semiconductor nanocrystal including a Group III-V compound and a shell including a second semiconductor nanocrystal surrounding the core, wherein the emissive nanocrystal particle includes a non-emissive Group I element.
    Type: Grant
    Filed: August 21, 2019
    Date of Patent: April 26, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yuho Won, Jihyun Min, Eun Joo Jang, Hyo Sook Jang
  • Patent number: 11296294
    Abstract: A display device including a light source; and a quantum dot emission layer disposed on the light source, wherein the quantum dot emission layer includes a first emission layer disposed in a red pixel of the display device, and a second emission layer disposed in a green pixel of the display device, the light source includes a first portion configured to supply a first incident light to the first emission layer, a second portion configured to supply a second incident light to the second emission layer, and a third portion configured to supply a third light to a blue pixel of the display device, the first emission layer includes red light emitting quantum dots and the second emission layer includes green light emitting quantum dots, and each of the first portion, the second portion, and the third portion comprises a layer comprising blue light emitting quantum dots.
    Type: Grant
    Filed: June 24, 2020
    Date of Patent: April 5, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyo Sook Jang, Tae Hyung Kim, Eun Joo Jang, Oul Cho
  • Publication number: 20220056338
    Abstract: The invention relates to InP-based nanoclusters that include indium and phosphorus and further include zinc, chlorine, or a combination thereof, and to a method of preparing the InP-based nanoparticles including heating the InP-based nanoclusters in the presence of zinc, chlorine, or a combination thereof.
    Type: Application
    Filed: August 20, 2021
    Publication date: February 24, 2022
    Inventors: Yong Wook KIM, Yong ju KWON, Sungjee KIM, Jihyun MIN, Yuho WON, Eun Joo JANG, Hyo Sook JANG, Eunjae LEE, Kyuhyun BANG, Anastasia AGNES, Jeongmin KIM
  • Publication number: 20220041930
    Abstract: A cadmium free quantum dot including a core including a first semiconductor nanocrystal, and a semiconductor nanocrystal shell disposed on the core, a composition of the semiconductor nanocrystal shell being different from a composition of the first semiconductor nanocrystal, a production method thereof, and a device including the same are disclosed. The semiconductor nanocrystal shell includes a zinc chalcogenide, the zinc chalcogenide includes selenium, tellurium, sulfur, or a combination thereof, and the quantum dot further alkaline an alkaline earth metal.
    Type: Application
    Filed: August 5, 2021
    Publication date: February 10, 2022
    Inventors: Jihyun Min, Eun Joo Jang, Yuho Won, Hyo Sook Jang
  • Publication number: 20220017818
    Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.
    Type: Application
    Filed: September 30, 2021
    Publication date: January 20, 2022
    Inventors: Yuho WON, Nayoun WON, Sungwoo HWANG, Eun Joo JANG, Soo Kyung KWON, Yong Wook KIM, Jihyun MIN, Garam PARK, Shang Hyeun PARK, Hyo Sook JANG, Shin Ae JUN, Yong Seok HAN
  • Patent number: 11226447
    Abstract: A light source includes a light emitting element which emits light, and a light conversion layer which converts the light emitted from the light emitting element into white light and emits the white light, where the light conversion layer includes a resin and a quantum dot material mixed with the resin, and a red apex of a color region of the white light is positioned in a region of 0.65<Cx<0.69 and 0.29<Cy<0.3370 in color coordinates, and a green apex of a color region of the white light is positioned in a region of 0.17<Cx<0.31 and 0.61<Cy<0.70 in the color coordinates.
    Type: Grant
    Filed: March 8, 2019
    Date of Patent: January 18, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae Hyung Kim, Eun Joo Jang, Shin Ae Jun, Hyun A Kang, Yongwook Kim, Na Youn Won, Hyo Sook Jang
  • Publication number: 20220002621
    Abstract: A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.
    Type: Application
    Filed: July 2, 2021
    Publication date: January 6, 2022
    Inventors: Sung Woo KIM, Eun Joo JANG, Hyo Sook JANG, Hwea Yoon KIM, Yuho WON
  • Patent number: 11193062
    Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85.
    Type: Grant
    Filed: March 20, 2020
    Date of Patent: December 7, 2021
    Assignees: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG DISPLAY CO., LTD., SAMSUNG SDI CO.. LTD.
    Inventors: Garam Park, Tae Gon Kim, Nayoun Won, Shin Ae Jun, Soo Kyung Kwon, Seon-Yeong Kim, Shang Hyeun Park, Jooyeon Ahn, Yuho Won, Eun Joo Jang, Hyo Sook Jang
  • Patent number: 11142685
    Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.
    Type: Grant
    Filed: January 11, 2019
    Date of Patent: October 12, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yuho Won, Nayoun Won, Sungwoo Hwang, Eun Joo Jang, Soo Kyung Kwon, Yong Wook Kim, Jihyun Min, Garam Park, Shang Hyeun Park, Hyo Sook Jang, Shin Ae Jun, Yong Seok Han
  • Publication number: 20210296608
    Abstract: A quantum dot device including a first electrode and a second electrode each having a surface opposite the other, a quantum dot layer disposed between the first electrode and the second electrode, and an electron auxiliary layer disposed between the quantum dot layer and the second electrode, wherein the electron auxiliary layer includes inorganic nanoparticles including an alkaline-earth metal, and an alkali metal, an alkali metal compound, or a combination thereof, and an electronic device including the quantum dot device.
    Type: Application
    Filed: March 12, 2021
    Publication date: September 23, 2021
    Inventors: Heejae LEE, Moon Gyu HAN, Won Sik YOON, Eun Joo JANG, Dae Young CHUNG, Tae Hyung KIM, Hyo Sook JANG
  • Publication number: 20210288258
    Abstract: The present disclosure provides a technique capable of improving durability (particularly luminescence life-span) of an electroluminescence. In order to solve the above problems, the present disclosure provides an arylamine-fluorene alternating copolymer having a structural unit (A) represented by Chemical Formula (1).
    Type: Application
    Filed: March 5, 2021
    Publication date: September 16, 2021
    Inventors: Masashi TSUJI, Takahiro FUJIYAMA, Yusaku KONISHI, Dae Young CHUNG, Fumiaki KATO, Jaejun CHANG, Keigo FURUTA, Takao MOTOYAMA, Eun Joo JANG, Hyo Sook JANG, Tae Ho KIM, Tomoyuki KIKUCHI, Yuho WON
  • Publication number: 20210257551
    Abstract: A quantum dot device including a first electrode and a second electrode each having a surface opposite the other, a quantum dot layer disposed between the first electrode and the second electrode, an electron transport layer disposed between the quantum dot layer and the second electrode and including first inorganic nanoparticles and a first organic material, and an electron injection layer disposed between the electron transport layer and the second electrode and including second inorganic nanoparticles and a second organic material, wherein a ratio by weight of an amount of the second organic material to a total amount of the second inorganic nanoparticles and the second organic material in the electron injection layer is less than a ratio by weight of an amount of the first organic material to a total amount of the first inorganic nanoparticles and the first organic material in the electron transport layer. An electronic device including the quantum dot device.
    Type: Application
    Filed: February 9, 2021
    Publication date: August 19, 2021
    Inventors: Won Sik YOON, Moon Gyu HAN, Kwanghee KIM, Heejae LEE, Eun Joo JANG, Tae Hyung KIM, Hyo Sook JANG
  • Publication number: 20210246370
    Abstract: Quantum dots and electroluminescent device including the same. The quantum dots include an alloy core including a first semiconductor nanocrystal including indium (In), gallium (Ga), and phosphorous (P), and a semiconductor nanocrystal shell disposed on the alloy core, wherein the quantum dots do not include cadmium, wherein the quantum dots are configured to emit blue light having a maximum emission peak wavelength that is greater than or equal to about 440 nanometers (nm) and less than or equal to about 490 nm, wherein in the quantum dots, a mole ratio of gallium with respect to a sum of indium and gallium is greater than or equal to about 0.2:1 and less than or equal to about 0.75:1, and wherein the semiconductor nanocrystal shell includes a zinc chalcogenide.
    Type: Application
    Filed: February 3, 2021
    Publication date: August 12, 2021
    Inventors: Seonmyeong CHOI, Eun Joo JANG, Hyo Sook JANG, Kun Su PARK
  • Publication number: 20210222061
    Abstract: A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite: (Absfirst?Absvalley)/Absfirst=VD.
    Type: Application
    Filed: April 9, 2021
    Publication date: July 22, 2021
    Inventors: Hyo Sook JANG, Yuho WON, Sungwoo HWANG, Ji Yeong KIM, Eun Joo JANG
  • Patent number: 11060019
    Abstract: A composition comprising: a plurality of quantum dots; a plurality of luminous carbon nanoparticles; a carboxylic acid group-containing binder; a polymerizable monomer including a carbon-carbon double bond; and an initiator, wherein the plurality of quantum dots comprises a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, or a combination thereof, the plurality of luminous carbon nanoparticles have a size of less than or equal to about 10 nanometers, and exhibit both a D band and a G band in a Raman spectrum thereof, and at least a portion of the plurality of luminous carbon nanoparticles absorb light having a wavelength of greater than or equal to about 400 nanometers and a maximum luminous peak wavelength thereof is greater than or equal to about 480 nanometers.
    Type: Grant
    Filed: October 12, 2018
    Date of Patent: July 13, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yongwook Kim, Eun Joo Jang, Tae Gon Kim, Shang Hyeun Park, Hyo Sook Jang, Young-soo Jeong