Abstract: A display device according to an embodiment may include a base layer including a first surface and a second surface, a pixel circuit layer including a first line on the first surface, a display element layer on the pixel circuit layer and including a display element, a thin film encapsulation layer on the display element layer, a first protective layer on the thin film encapsulation layer, and a second line on the second surface to correspond to the first line. The first protective layer may include a transparent insulating material.

Abstract: A conductive pattern is disclosed that includes a conductive layer including aluminum, a first capping layer disposed on the conductive layer and including titanium, and a second capping layer disposed on the first capping layer and including titanium nitride. A mixed region in which the aluminum and the titanium are mixed with each other is disposed in at least portions of the conductive layer and the first capping layer.

Abstract: A display device is provided. The display device comprises a substrate, at least one thin-film transistor disposed on the substrate, a planarization layer disposed on the thin-film transistor, a first metal layer disposed on the planarization layer and connected to the thin-film transistor, a first electrode disposed on the first metal layer, partitioning walls disposed on the planarization layer and spaced apart from the first electrode, wherein each of the partitioning walls includes a second metal layer and a first conductive layer, a pixel defining layer disposed on the first electrode and the partitioning walls, an organic layer disposed on the first electrode and the pixel defining layer, and a second electrode disposed on the organic layer, wherein the second metal layer is disposed under the first conductive layer and has an undercut beneath the first conductive layer, wherein at least portion of the organic layer is discontinuous between the partitioning walls.

Abstract: A display device includes: a substrate including a display area and a transmission area; a blocking layer disposed in the display area of the substrate and including a first blocking layer and a second blocking layer that is disposed on the first blocking layer; an insulating layer disposed on the blocking layer; a transistor disposed on the insulating layer; and a light emitting element connected to the transistor, wherein a first reflectivity of the first blocking layer is smaller than a second reflectivity of the second blocking layer, and a first absorption coefficient of the first blocking layer is smaller than a second absorption coefficient of the second blocking layer.

Abstract: Provided is a display device comprising a substrate; a plurality of transistors disposed on the substrate; a first pixel electrode, a second pixel electrode, and a third pixel electrode respectively connected to the transistors; a first emission layer disposed to overlap the first pixel electrode, a second emission layer disposed to overlap the second pixel electrode, and a third emission layer disposed to overlap the third pixel electrode; and a common electrode disposed on the first emission layer, the second emission layer, and the third emission layer, wherein the first pixel electrode includes a first layer, and a second layer disposed on the first layer and including a Ga-doped ITO.

Abstract: A display device includes a substrate; an anode electrode disposed on the substrate; a first anti-contact layer disposed on the anode electrode and including molybdenum trioxide (MoO3); a second anti-contact layer disposed on the first anti-contact layer and including molybdenum dioxide (MoO2); and a pixel-defining layer disposed on the second anti-contact layer, wherein the first anti-contact layer includes a first opening, wherein the second anti-contact layer includes a second opening, wherein the pixel-defining layer includes a third opening, and wherein the first opening, the second opening and the third opening overlap one another and expose the anode electrode.

Abstract: An in-line manufacturing apparatus includes a carrier that transports a substrate, a plurality of process chambers subjected to a manufacturing process on the substrate transported through the carrier, and a cooling part disposed adjacent to the carrier and movable with the carrier.

Abstract: A display device includes: a substrate including a first display area and a second display area; an optical element which overlaps the second display area; a semiconductor layer disposed on the substrate; a first insulation layer disposed to cover the semiconductor layer; a gate conductor disposed on the first insulation layer; a second insulation layer disposed to cover the gate conductor; a data conductor disposed on the second insulation layer; a third insulation layer disposed to cover the data conductor; and a pixel electrode disposed on the data conductor. The data conductor disposed in the first display area includes an opaque conductor, and a part of the data conductor disposed in the second display area is a transparent conductor.

Abstract: A device includes a substrate including a display area and a pad area; a first conductive layer on the substrate; and a first insulating film on the first conductive layer, the first insulating film having a first contact hole in the display area to expose the first conductive layer and a pad opening exposing the first conductive layer in the pad area, the first conductive layer being arranged such that in a first region covered by the first insulating film, a second conductive capping layer of the first conductive layer is entirely on a first conductive capping layer of the first conductive layer; in a second region overlapping the contact hole, the second conductive capping layer is entirely on the first conductive capping layer; and in a third region exposed by the pad opening, the second conductive capping layer exposes at least a portion of the first conductive capping layer.

Abstract: A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.

Abstract: A display devise is provided. A display device includes a substrate, a lower metal pattern disposed on one surface of the substrate, a buffer layer disposed on the one surface of the substrate to cover the lower metal pattern, a semiconductor layer disposed on the buffer layer, a gate insulating film disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating film, wherein the lower metal pattern includes an antireflection layer disposed on the one surface of the substrate and a conductive metal layer disposed on one surface of the antireflection layer, and the antireflection layer includes molybdenum oxide (MoOx) and at least one of zinc oxide (ZnOx) and indium oxide (InOx).

Abstract: A display device is provided. A display device includes a non-display area where no image is displayed, and a display area where images are displayed, and including a first area and a second area having different light transmittances, and a first pixel and a second pixel, wherein a transistor and an anode electrode of the first pixel are in the first area, wherein an anode electrode of the second pixel is in the second area, and a transistor of the second pixel is outside the second area, wherein the anode electrode and the transistor of the second pixel are electrically connected by a connection line, and wherein at least a part of the connection line is in at least one of the first area and the second area, and is covered by an anti-reflection layer.

Abstract: A display device according to an embodiment may include a base layer including a first surface and a second surface, a pixel circuit layer including a first line on the first surface, a display element layer on the pixel circuit layer and including a display element, a thin film encapsulation layer on the display element layer, a first protective layer on the thin film encapsulation layer, and a second line on the second surface to correspond to the first line. The first protective layer may include a transparent insulating material.

Abstract: A display device includes: a substrate including a display area and a transmission area; a blocking layer disposed in the display area of the substrate and including a first blocking layer and a second blocking layer that is disposed on the first blocking layer; an insulating layer disposed on the blocking layer; a transistor disposed on the insulating layer; and a light emitting element connected to the transistor, wherein a first reflectivity of the first blocking layer is smaller than a second reflectivity of the second blocking layer, and a first absorption coefficient of the first blocking layer is smaller than a second absorption coefficient of the second blocking layer.

Abstract: A display device includes: a substrate; a data line on the substrate; a first insulating layer on the data line; a first transistor on the first insulating layer; a second insulating layer on the first transistor; a pixel electrode on the second insulating layer, the pixel electrode being electrically connected to the first transistor; and an auxiliary data pattern on the second insulating layer as a same layer as the pixel electrode, the auxiliary data pattern being electrically connected to the data line.

Abstract: A display device and a method of fabricating a display device are provided. A display device includes a substrate. The wiring layer includes a conductive metal layer and a metal compound layer of the conductive metal layer, The metal compound layer surrounds the conductive metal layer.

Abstract: An input sensing unit includes a first metal pattern layer including a plurality of first conductive lines extending in a first direction. A first insulating layer is disposed on the first metal pattern layer. A second metal pattern layer is positioned above the first insulating layer and includes a plurality of second conductive lines extending in a second direction intersecting the first direction. A second insulating layer is disposed on the second metal pattern layer. A sensing electrode is disposed on the second insulating layer and is electrically connected to the second metal pattern layer through a contact hole defined in the second insulating layer. An anti-reflection pattern layer is disposed on the first and second metal pattern layers to overlap the first and second metal pattern layers along a direction orthogonal to an upper surface of the anti-reflection pattern layer.

Abstract: A display device includes: a substrate including a first display area and a second display area; an optical element which overlaps the second display area; a semiconductor layer disposed on the substrate; a first insulation layer disposed to cover the semiconductor layer; a gate conductor disposed on the first insulation layer; a second insulation layer disposed to cover the gate conductor; a data conductor disposed on the second insulation layer; a third insulation layer disposed to cover the data conductor; and a pixel electrode disposed on the data conductor. The data conductor disposed in the first display area includes an opaque conductor, and a part of the data conductor disposed in the second display area is a transparent conductor.

Abstract: An OLED display according to an exemplary embodiment includes: a substrate; a gate insulation layer that is disposed on the substrate; and a gate wire that is disposed on the gate insulation layer, and includes a gate electrode, wherein the gate wire includes a single layer of aluminum or an aluminum alloy, and an angle formed by side surfaces of the gate wire and the gate insulation layer is less than 65°.

Abstract: A display substrate may include a substrate and a wiring on the substrate. The wiring may include a metal oxide layer including at least one oxide selected from tantalum (Ta), niobium (Nb), and titanium (Ti), and a metal layer on the metal oxide layer and including copper (Cu), and a thickness of the metal oxide layer may be in a range of about 30 angstroms (?) to about 50 ?.