Abstract: A method of manufacturing a display device includes: preparing a substrate including a first area and a second area, forming a first layer on the first area and the second area, forming a second layer on the first layer of the first area, respectively forming a first electrode layer on the second layer of the first area and the first layer of the second area, forming a reflective layer on the first electrode layer of the first area, and forming a second electrode layer on the reflective layer.

Abstract: An organic light emitting diode, which has a pixel electrode, the pixel electrode constructed with a first layer comprising metal oxide on the substrate; a second layer comprising silver alloyed with at least one metal selected from a group consisting of lanthanide series elements and actinide series elements on the first layer; and a third layer comprising metal oxide on the second layer. As such, there are provided the second layer comprising the silver alloy, and the first and third layer comprising the metal oxide and formed above and below the second layer so that adhesion of a silver alloy (e.g., ATD alloy) may be enhanced, and an anode having enhanced reflectance may also be provided by using silver with increased reflectance.

Abstract: A thin film transistor and a method of fabricating the same capable of reducing stress of a substrate caused by a metal layer of the drain and source electrodes, the thin film transistor including a substrate; a semiconductor layer disposed on the substrate and including source, drain and channel regions; a gate insulating layer disposed on the substrate including the semiconductor layer; a gate electrode disposed on the gate insulating layer to correspond to the channel region of the semiconductor layer; an interlayer insulating layer disposed on the substrate including the gate electrode, and having contact holes connected with the source and drain regions of the semiconductor layer; and source and drain electrodes connected with the source and drain regions through the contact holes, wherein the source and drain electrodes include a first metal layer, a second metal layer, and a metal oxide layer interposed between the first metal layer and the second metal layer.

Abstract: An organic light-emitting device is constructed with an anode provided with a reflective metal layer, a transparent conductive layer, and a reflective metal oxide layer interposed therebetween, a cathode, and an organic functional layer interposed between the transparent conductive layer of the anode and the cathode, and provided with at least an organic emission layer. With this configuration, the reflective anode has high reflectivity, the reflectivity thereof is not substantially changed depending on wavelengths, and the reflective anode is free from defects caused by a galvanic phenomenon.

Abstract: An organic light emitting device (OLED) and a method of fabricating the same are provided, wherein the OLED includes a thin film transistor having a gate electrode, and source and drain electrodes on a substrate; a triple-layered pixel electrode connected to one of the source and drain electrodes through a via-contact hole formed in an insulating layer on the substrate, and having a lower pixel electrode, a reflective layer pattern and an upper pixel electrode; an organic layer disposed on the upper pixel electrode and having at least an emission layer; and an opposite electrode disposed on the organic layer.

Abstract: An organic light emitting device includes an anode electrode having an improved characteristic. The organic light emitting device is constructed with a first electrode including indium tungsten oxide (IWO) so that the anode electrode can be readily patterned, an organic light emitting layer formed on the first electrode, and a second electrode formed on the organic light emitting layer. An organic light emitting display apparatus may be constructed with the organic light emitting device.

Abstract: An organic light emitting display that prevents a material used to form a source electrode and a drain electrode from being diffused into an active layer and reduces contact resistance between the source and drain electrodes and a first electrode includes: a substrate; an active layer arranged on the substrate and including silicon; a gate electrode arranged on the substrate and insulated from the active layer; a source electrode and a drain electrode each of a single layer structure, insulated from the gate electrode, and electrically connected to the active layer; a first electrode electrically connected to either the source electrode or the drain electrode; an organic light emitting layer arranged on the first electrode; and a second electrode arranged on the organic light emitting layer, each source electrode and drain electrode includes an aluminum alloy containing nickel and silicon.

Abstract: An organic light emitting device (OLED) and a method of fabricating the same are provided, wherein the OLED includes a thin film transistor having a gate electrode, and source and drain electrodes on a substrate; a triple-layered pixel electrode connected to one of the source and drain electrodes through a via-contact hole formed in an insulating layer on the substrate, and having a lower pixel electrode, a reflective layer pattern and an upper pixel electrode; an organic layer disposed on the upper pixel electrode and having at least an emission layer; and an opposite electrode disposed on the organic layer.

Abstract: A method of fabricating a thin film transistor can include forming a metal catalyst layer on a substrate on which an amorphous silicon layer and a capping layer are formed. The metal catalyst may be formed using a sputtering target in which a composition ratio of the metal catalyst is controlled in the process of forming the sputtering target. The target may be composed of the metal catalyst and a metal with a larger atomic weight than the metal catalyst. The alloy may be formed with a predetermined composition ratio. The substrate may be annealed to crystallize the amorphous silicon layer to a polycrystalline silicon layer.

Abstract: A method of manufacturing a display device includes: preparing a substrate including a first area and a second area, forming a first layer on the first area and the second area, forming a second layer on the first layer of the first area, respectively forming a first electrode layer on the second layer of the first area and the first layer of the second area, forming a reflective layer on the first electrode layer of the first area, and forming a second electrode layer on the reflective layer.

Abstract: An organic light emitting display device and a method of fabricating the same are provided, which employ an Ag alloy containing Sm, Tb, Au, and Cu to simultaneously form a source electrode, a drain electrode, and a first electrode of the organic light emitting display device for increasing the reflectivity and efficiency of the organic light emitting display device and reducing the organic light emitting display device panel size by reducing a line width of the source and drain electrodes due to the low resistance of the source and drain electrodes.

Abstract: An active matrix type organic electroluminescent device includes a plurality of pixels disposed on a substrate. A pixel includes a driving area and a light-emitting area. The light-emitting area comprises a gate insulating layer formed over a substrate, an interlayer insulating layer formed on the gate insulating layer, a first pixel electrode disposed over the interlayer insulating layer and coupled to a driving thin film transistor, a passivation layer interposed between the interlayer insulating layer and the first pixel electrode, a second pixel electrode disposed over the first pixel electrode, and a light-emitting layer interposed between the first pixel electrode and the second pixel electrode. The substrate, the gate insulating layer, the interlayer insulating layer, the first pixel electrode, and the passivation layer each have a refractive index of 1.4 to 1.6.

Abstract: Exemplary embodiments provide a flat panel display and method for forming the same including a substrate having a pixel driving circuit region and an emission region, a thin film transistor in the pixel driving circuit region, and a pixel electrode on the same layer as the source and drain electrodes. The thin film transistor may include a semiconductor layer, a gate electrode, and source and drain electrodes. The pixel electrode may contact one end of the semiconductor layer of the thin film transistor. The source and drain electrodes and the pixel electrode may be stacked structures having a first metal layer, a second metal layer, and a transparent conductive layer.

Abstract: An organic light emitting display device including a first electrode that has a three layer structure, improved adhesion, and is simple to fabricate, and a method of fabricating the same, are provided. The organic light emitting display device includes: a substrate; a first electrode disposed on the substrate, the first electrode comprising a first metal layer including Mo or an Mo alloy, a second metal layer disposed on the first metal layer and including Ag or an Ag alloy, and a third metal layer disposed on the second metal layer and including a transparent conductive oxide layer; an organic layer disposed on the first electrode and including an organic emission layer; and a second electrode disposed on the organic layer.

Abstract: An organic light-emitting display device and a method of fabricating the same. The organic light-emitting display device includes: a substrate; a first electrode including a first metal layer disposed on the substrate and formed of titanium (Ti), aluminum (Al), a titanium or aluminum alloy, a second metal layer disposed on the first metal layer, and a transparent conductive layer disposed on the second metal layer; an organic layer disposed on the first electrode and including at least one organic emission layer; and a second electrode disposed on the organic layer. The method includes: forming a first electrode including a first metal layer formed of Ti, Al, or a titanium or aluminum alloy, a second metal layer, and a transparent conductive layer, on a substrate; forming an organic layer including at least one organic emission layer on the first electrode; and forming a second electrode on the organic layer.

Abstract: A thin film transistor and a method of fabricating the same capable of reducing stress of a substrate caused by a metal layer of the drain and source electrodes, the thin film transistor including a substrate; a semiconductor layer disposed on the substrate and including source, drain and channel regions; a gate insulating layer disposed on the substrate including the semiconductor layer; a gate electrode disposed on the gate insulating layer to correspond to the channel region of the semiconductor layer; an interlayer insulating layer disposed on the substrate including the gate electrode, and having contact holes connected with the source and drain regions of the semiconductor layer; and source and drain electrodes connected with the source and drain regions through the contact holes, wherein the source and drain electrodes include a first metal layer, a second metal layer, and a metal oxide layer interposed between the first metal layer and the second metal layer.

Abstract: An organic light emitting display device and a method of fabricating the same are provided, which employ an Ag alloy containing Sm, Tb, Au, and Cu to simultaneously form a source electrode, a drain electrode, and a first electrode of the organic light emitting display device for increasing the reflectivity and efficiency of the organic light emitting display device and reducing the organic light emitting display device panel size by reducing a line width of the source and drain electrodes due to the low resistance of the source and drain electrodes.

Abstract: An organic light emitting diode, which has a pixel electrode, the pixel electrode constructed with a first layer comprising metal oxide on the substrate; a second layer comprising silver alloyed with at least one metal selected from a group consisting of lanthanide series elements and actinide series elements on the first layer; and a third layer comprising metal oxide on the second layer. As such, there are provided the second layer comprising the silver alloy, and the first and third layer comprising the metal oxide and formed above and below the second layer so that adhesion of a silver alloy (e.g., ATD alloy) may be enhanced, and an anode having enhanced reflectance may also be provided by using silver with increased reflectance.

Abstract: A method of fabricating a thin film transistor can include forming a metal catalyst layer on a substrate on which an amorphous silicon layer and a capping layer are formed. The metal catalyst may be formed using a sputtering target in which a composition ratio of the metal catalyst is controlled in the process of forming the sputtering target. The target may be composed of the metal catalyst and a metal with a larger atomic weight than the metal catalyst. The alloy may be formed with a predetermined composition ratio. The substrate may be annealed to crystallize the amorphous silicon layer to a polycrystalline silicon layer.

Abstract: An organic light emitting device (OLED) and a method of fabricating the same are provided, wherein the OLED includes a thin film transistor having a gate electrode, and source and drain electrodes on a substrate; a triple-layered pixel electrode connected to one of the source and drain electrodes through a via-contact hole formed in an insulating layer on the t substrate, and having a lower pixel electrode, a reflective layer pattern and an upper pixel electrode; an organic layer disposed on the upper pixel electrode and having at least an emission layer; and an opposite electrode disposed on the organic layer.