Abstract: A display device includes electrodes on a base layer; a first insulating layer on the electrodes; a light emitting element on the first insulating layer; and a connection electrode electrically connecting the light emitting element and at least a portion of the electrodes. Each of the electrodes includes a first layer and a second layer on the first layer. The first layer is electrically connected to the connection electrode through a contact portion formed in a region penetrating the first insulating layer and the second layer.

Abstract: Provided is a display device. The display device includes: a substrate; a gate line disposed on the substrate; a transistor including a part of the gate line; and a light-emitting element connected to the transistor, in which the gate line includes a first layer including aluminum or an aluminum alloy, a second layer including titanium nitride, and a third layer including metallic titanium nitride. An N/Ti molar ratio of the metallic titanium nitride may be in a range from about 0.2 to about 0.75.

Abstract: A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.

Abstract: A light control film includes a first light absorbing layer, a first organic layer disposed on the first light absorbing layer, and a second light absorbing layer disposed on the first organic layer. At least one of the first light absorbing layer and the second light absorbing layer includes a first layer including a metal oxide, a second layer disposed on the first layer and including a metal, and a third layer disposed on the second layer and including a metal oxide.

Abstract: Provided is a display device. The display device includes: a substrate; a gate line disposed on the substrate; a transistor including a part of the gate line; and a light-emitting element connected to the transistor, in which the gate line includes a first layer including aluminum or an aluminum alloy, a second layer including titanium nitride, and a third layer including metallic titanium nitride. An N/Ti molar ratio of the metallic titanium nitride may be in a range from about 0.2 to about 0.75.

Abstract: A display device includes a substrate including a pixel area and a dummy area, wherein the pixel area includes a transistor disposed on the substrate, a first electrode electrically connected to the transistor, a second electrode overlapping the first electrode, and a functional layer and an emission layer disposed between the first electrode and the second electrode, and the dummy area includes a first dummy electrode disposed on the substrate, and a dummy insulating layer covering the side of at least part of the first dummy electrode.

Abstract: A wiring substrate and a display device including the same are provided. The display device includes a first substrate including a display area and a pad area disposed on one side of the display area, and a plurality of conductive layers including a plurality of wires and conductive patterns disposed in the display area and the pad area on the first substrate, wherein at least one of the conductive layers includes a copper-indium alloy and comprises a metal layer having a grain size equal to or less than about 140 nm.

Abstract: A display device includes a display area and a pad area on a side of the display area, a plurality of conductive layers on a first substrate in the display area and the pad area and comprising a wiring and a conductive pattern, a via layer on the plurality of conductive layers, a plurality of electrodes on the via layer in the display area and spaced apart from each other, and a light emitting element on at least one of the plurality of electrodes. At least one of the conductive layers includes a first metal layer, a second metal layer on the first metal layer, and a third metal layer on the second metal layer. The second metal layer includes copper (Cu), the third metal layer includes a copper alloy, and a grain size of the third metal layer is smaller than a grain size of the second metal layer.

Abstract: A display device includes: a substrate; a data line on the substrate; a first insulating layer on the data line; a first transistor on the first insulating layer; a second insulating layer on the first transistor; a pixel electrode on the second insulating layer, the pixel electrode being electrically connected to the first transistor; and an auxiliary data pattern on the second insulating layer as a same layer as the pixel electrode, the auxiliary data pattern being electrically connected to the data line.

Abstract: There are provided a display device and a method of manufacturing the display device. The display device includes: electrodes spaced apart from each other; light emitting elements disposed between the electrodes; and connection electrodes disposed on the light emitting elements. Each of the connection electrodes includes a first conductive layer and a second conductive layer disposed on the first conductive layer, and a work function of the first conductive layer is lower than a work function of the second conductive layer.

Abstract: A display device according to an embodiment may include a base layer including a first surface and a second surface, a pixel circuit layer including a first line on the first surface, a display element layer on the pixel circuit layer and including a display element, a thin film encapsulation layer on the display element layer, a first protective layer on the thin film encapsulation layer, and a second line on the second surface to correspond to the first line. The first protective layer may include a transparent insulating material.

Abstract: A display device and a method of fabricating a display device are provided. A display device includes a substrate. The wiring layer includes a conductive metal layer and a metal compound layer of the conductive metal layer, The metal compound layer surrounds the conductive metal layer.

Abstract: A conductive pattern is disclosed that includes a conductive layer including aluminum, a first capping layer disposed on the conductive layer and including titanium, and a second capping layer disposed on the first capping layer and including titanium nitride. A mixed region in which the aluminum and the titanium are mixed with each other is disposed in at least portions of the conductive layer and the first capping layer.

Abstract: A display device is provided. The display device comprises a substrate, at least one thin-film transistor disposed on the substrate, a planarization layer disposed on the thin-film transistor, a first metal layer disposed on the planarization layer and connected to the thin-film transistor, a first electrode disposed on the first metal layer, partitioning walls disposed on the planarization layer and spaced apart from the first electrode, wherein each of the partitioning walls includes a second metal layer and a first conductive layer, a pixel defining layer disposed on the first electrode and the partitioning walls, an organic layer disposed on the first electrode and the pixel defining layer, and a second electrode disposed on the organic layer, wherein the second metal layer is disposed under the first conductive layer and has an undercut beneath the first conductive layer, wherein at least portion of the organic layer is discontinuous between the partitioning walls.

Abstract: A display device includes: a substrate including a display area and a transmission area; a blocking layer disposed in the display area of the substrate and including a first blocking layer and a second blocking layer that is disposed on the first blocking layer; an insulating layer disposed on the blocking layer; a transistor disposed on the insulating layer; and a light emitting element connected to the transistor, wherein a first reflectivity of the first blocking layer is smaller than a second reflectivity of the second blocking layer, and a first absorption coefficient of the first blocking layer is smaller than a second absorption coefficient of the second blocking layer.

Abstract: Provided is a display device comprising a substrate; a plurality of transistors disposed on the substrate; a first pixel electrode, a second pixel electrode, and a third pixel electrode respectively connected to the transistors; a first emission layer disposed to overlap the first pixel electrode, a second emission layer disposed to overlap the second pixel electrode, and a third emission layer disposed to overlap the third pixel electrode; and a common electrode disposed on the first emission layer, the second emission layer, and the third emission layer, wherein the first pixel electrode includes a first layer, and a second layer disposed on the first layer and including a Ga-doped ITO.

Abstract: A display device includes a substrate; an anode electrode disposed on the substrate; a first anti-contact layer disposed on the anode electrode and including molybdenum trioxide (MoO3); a second anti-contact layer disposed on the first anti-contact layer and including molybdenum dioxide (MoO2); and a pixel-defining layer disposed on the second anti-contact layer, wherein the first anti-contact layer includes a first opening, wherein the second anti-contact layer includes a second opening, wherein the pixel-defining layer includes a third opening, and wherein the first opening, the second opening and the third opening overlap one another and expose the anode electrode.

Abstract: An in-line manufacturing apparatus includes a carrier that transports a substrate, a plurality of process chambers subjected to a manufacturing process on the substrate transported through the carrier, and a cooling part disposed adjacent to the carrier and movable with the carrier.

Abstract: A display device includes: a substrate including a first display area and a second display area; an optical element which overlaps the second display area; a semiconductor layer disposed on the substrate; a first insulation layer disposed to cover the semiconductor layer; a gate conductor disposed on the first insulation layer; a second insulation layer disposed to cover the gate conductor; a data conductor disposed on the second insulation layer; a third insulation layer disposed to cover the data conductor; and a pixel electrode disposed on the data conductor. The data conductor disposed in the first display area includes an opaque conductor, and a part of the data conductor disposed in the second display area is a transparent conductor.

Abstract: A device includes a substrate including a display area and a pad area; a first conductive layer on the substrate; and a first insulating film on the first conductive layer, the first insulating film having a first contact hole in the display area to expose the first conductive layer and a pad opening exposing the first conductive layer in the pad area, the first conductive layer being arranged such that in a first region covered by the first insulating film, a second conductive capping layer of the first conductive layer is entirely on a first conductive capping layer of the first conductive layer; in a second region overlapping the contact hole, the second conductive capping layer is entirely on the first conductive capping layer; and in a third region exposed by the pad opening, the second conductive capping layer exposes at least a portion of the first conductive capping layer.