Abstract: Provided are an adhesive film, an optical member comprising same, and an optical display device comprising same, the adhesive film being formed of a composition that includes: a monomer mixture including a monomer having a glass transition temperature of homopolymer of about ?50° C. or less, and (meth)acrylate having a hydroxyl group; and an epoxy silane coupling agent, wherein a variation of the shear strain rate of equation 1 is about 10% or less for the adhesive film.

Abstract: Various embodiments relate to a device and method for controlling vehicles and a radar system for vehicles. The vehicle controller may include a spectrum generator generating a 2D spectrum, a range-velocity map generator generating a range-velocity map corresponding to each height value included in a height set, a correlation coefficient determiner determining a correlation coefficient corresponding to each height value included in the height set, and a target determiner estimating a height of a target based on the correlation coefficient and recognizing the target based on the height of the target.

Abstract: A device for controlling a charging of a hydrogen tank for a vehicle, may efficiently perform a charging of a hydrogen tank regardless of a hydrogen charging protocol for each charging station configured to supply hydrogen to the hydrogen tank by directly controlling a hydrogen charging speed of the hydrogen tank in a vehicle upon charging the hydrogen tank mounted in the vehicle.

Abstract: A nonvolatile memory device according to an embodiment includes a substrate having an upper surface, a source electrode structure disposed on the substrate, and a channel structure disposed over the substrate and disposed to contact one sidewall surface of the source electrode structure. In addition, the nonvolatile memory device includes a drain electrode structure disposed to contact one sidewall surface of the channel structure over the substrate. In addition, the nonvolatile memory device includes a plurality of ferroelectric structures extending in a first direction perpendicular to the substrate in the channel structure and disposed to be spaced apart from each other along the second direction perpendicular to the first direction. In addition, the nonvolatile memory device includes a gate electrode structure disposed in each of the plurality of ferroelectric structure to extend along the first direction.

Abstract: The disclosure provides methods for treating or preventing coronavirus infection comprising administration of a therapeutically effective amount of lactoferrin or a therapeutically effective amount of a protein fusion comprising recombinant lactoferrin fused to the receptor binding domain of the SARS-CoV-2 spike protein. Also provided are methods for treating or preventing SARS-CoV-2 infection comprising co-administration of a therapeutically effective amount of lactoferrin and a second drug treatment, such as ivermectin. Also provided are methods for treating or preventing SARS-CoV-2 infection comprising co-administration of a therapeutically effective amount of lactoferrin and a second drug treatment, such as ivermectin.

Abstract: A simple urine flow test result learning method and a lower urinary tract symptom diagnosis method is provided, and more particularly, a simple urine flow test result learning method and a lower urinary tract symptom diagnosis method of training a neural network using simple urine flow test results, which are non-invasive data, and diagnosing lower urinary tract symptoms using the trained neural network, wherein the lower urinary tract symptom diagnosis method prevents pain and shame from occurring in a patient during a diagnosis process of lower urinary tract symptoms and reduces the risk of secondary infection occurring through an invasive diagnosis method, by generating a trained model using results of a simple urine flow test, which is a non-invasive test method, based on deep learning, and diagnosing lower urinary tract symptoms using the trained model.

Abstract: A semiconductor device may include: a first conductive layer; a second conductive layer spaced apart from the first conductive layer; a tunnel insulating layer interposed between the first conductive layer and the second conductive layer and disposed adjacent to the first conductive layer; a charge blocking layer interposed between the first conductive layer and the second conductive layer and disposed adjacent to the second conductive layer; and a selector layer interposed between the tunnel insulating layer and the charge blocking layer, wherein the semiconductor device functions as a self-selecting memory.

Abstract: An adhesive film formed of an adhesive composition including a hydroxyl group-containing (meth)acrylic copolymer and a silicone-containing (meth)acrylic compound, the adhesive film having a peel strength ratio of about 50% or more, as calculated by Equation 1, an optical member including the same, and an optical display apparatus including the same are disclosed.

Abstract: A method of manufacturing a semiconductor device comprises: providing a substrate having a base insulation layer; forming, over the base insulation layer, a plurality of first word line structures extending in a first lateral direction and a first switching functional layer disposed between the plurality of first word line structures, the plurality of first word line structures; forming a first interlayer insulation layer on the plurality of first word line structures and the first switching functional layer; forming a plurality of second word line structures and a second switching functional layer disposed between the plurality of second word line structures; performing selective etching to the second switching functional layer, the first interlayer insulation layer, the first switching functional layer, and the base insulation layer to form bit line contact holes; and providing a conductive material in the bit line contact holes to form bit line structures.

Abstract: A resistive memory device includes a vertical word line pillar, a plurality of resistive layers, a gate insulation layer, and a channel layer. The vertical word line pillar is formed on a semiconductor substrate. The resistive layers are stacked at both sides of the vertical word line pillar. The gate insulation layer is interposed between the vertical word line pillar and the resistive layers. The channel layer is arranged between the gate insulation layer and the resistive layers.

Abstract: Provided herein are methods of diagnosing an electronic device having an ice making function, the method comprising: receiving, by a server, data related to water supply and ice making from the electronic device; based on receiving the data, checking, by the server, one or more of water pressure state, an ice making state, or an ice usage state of the electronic device; based on the checked state, diagnosing, by the server, the electronic device to be in a low water pressure state or an insufficient water supply state; and based on the diagnosis, activating, by the server, a repair-inspection service for the electronic device, or providing a notification service to a user terminal corresponding to the electronic device.

Abstract: The present disclosure relates to a management server for an ice maker that includes: a communicator configured to receive (i) operation information on extraction of ice stored in the ice maker and (ii) sensing information on an amount of the ice stored in the ice maker; and a controller configured, based on (i) the received operation information and sensing information in a first time section and (ii) the received operation information and sensing information in a second time section after the first time section, to determine whether the ice stored in the ice maker is clumped in the second time section.

Abstract: Provided is a lithium secondary battery including a cathode containing a cathode active material in which a central part has a different concentration from a surface part, and a conductive material having a specific composition ratio, and specifically, a lithium secondary battery including a cathode containing a cathode active material in which a central part of one or more kinds of metals configuring the cathode active material has a different concentration from a surface part thereof, and two or more kinds of conductive materials mixed at a specific ratio, thereby having excellent stability and high low-temperature characteristic and high output characteristic as compared to a conventional lithium secondary battery.

Abstract: A device for charging an electric vehicle includes a charging inlet for receiving charging information and power from electric vehicle supply equipment (EVSE); a control module for determining a charging mode on the basis of the charging information, and outputting a control signal according to the determined charging mode; and a charging unit for charging a battery of the electric vehicle according to the control signal from the control module.

Abstract: An electronic device including a semiconductor memory is provided. The semiconductor memory includes: a substrate having a substantially horizontal upper surface; first to Nth layers (where N is a natural number of two or more) disposed in horizontal layers on the substrate and spaced apart from each other above the substrate in a vertical direction, wherein each of the first to Nth layers includes a plurality of conductive lines; an insulating layer disposed to fill spaces between the conductive lines; a hole having sidewalls that extends in the vertical direction through the conductive lines of the first to Nth layers and the insulating layer therebetween; a variable resistance layer disposed on the sidewalls of the hole; and a conductive pillar disposed to fill the hole in which the variable resistance layer is formed.

Abstract: A semiconductor fabrication apparatus comprising a light source configured to emit light, a substrate stage arranged to receive a substrate exposed to the emitted light, a reticle arranged between the substrate stage and the light source, and a reticle stage arranged to receive the reticle. The reticle stage including a lower plate, an upper plate arranged above the lower plate, an actuator connected to the lower plate configured to move in a direction parallel to the upper plate, a first cable slab arranged between the upper plate and the lower plate and connected to one side of the actuator, and a first cable cover that surrounds an outer periphery of the first cable slab and contacts the lower plate when the first cable slab becomes bent.

Abstract: Proposed is a cartridge (1000) for accommodating a microneedle patch (100) comprising: a body portion (1002) which is accommodated in an accommodating part formed in a housing (201) of an applicator (200), and a flat plate portion (1004), mounted on the body portion (1002), comprising a flat plate opening (1006) through which a pressurizing part (404) of a drive mechanism (400) passes and a fixing portion (1005) operatively coupled to the drive mechanism (400), wherein the flat plate portion (1004) is rotated according to a driving of the drive mechanism (400) and is located below the microneedle patch (100) to supports the microneedle patch (100).

Abstract: The present discloses relates to a semiconductor device and a method of manufacturing the semiconductor device. A semiconductor device includes a stacked structure including insulating layers and conductive layers stacked alternately with each other, a channel structure passing through at least a portion of the stacked structure, and a memory layer interposed between the conductive layers and the channel structure, wherein the memory layer includes a floating gate arranged between the conductive layers and the channel structure.

Abstract: A semiconductor device includes a substrate, a plurality of word line structures disposed over the substrate to be spaced apart from each other in a first direction perpendicular to a surface of the substrate. Each of the plurality of word line structures extends in a second direction parallel to the surface of the substrate. In addition, the semiconductor device includes a switching layer disposed over the substrate to contact side surfaces of the plurality of word line structures, and bit line structures disposed over the substrate to extend in the first direction and to contact a surface of the switching layer. The switching layer is configured to perform a threshold switching operation, and has a variable programmable threshold voltage.

Abstract: A touch sensing device includes first sensor electrodes disposed in a first area, second sensor electrodes disposed in a second area, first sensor lines each connected to the first sensor electrodes in the first area, and second sensor lines each connected to the second sensor electrodes in the second area. Each of the second sensor lines includes a first sub-sensor line disposed in the second area, and a second sub-sensor line disposed in the first area and the second area and connected to the first sub-sensor line.