Abstract: A semiconductor device according to an embodiment includes a substrate, a source electrode layer and a drain electrode layer that are disposed to be spaced apart from each other on the substrate, an active layer disposed on the substrate to contact the source electrode layer and the drain electrode layer, and a gate electrode layer disposed on the active layer. The active layer includes metal oxide capable of exsolving and reincorporating metal particles. The electrical resistance in the active layer is configured to be reversibly changed by exsolution and reincorporation of the metal particles.

Abstract: A nonvolatile memory device according to an embodiment includes a substrate, a resistance change layer disposed over the substrate, a gate insulation layer disposed on the resistance change layer, a gate electrode layer disposed on the gate insulation layer, and a first electrode pattern layer and a second electrode pattern layer that are disposed respectively over the substrate and disposed to contact a different portion of the resistance change layer.

Abstract: A semiconductor device according to an embodiment of the present disclosure includes a substrate, a gate structure disposed over the substrate, a dielectric structure disposed to contact a sidewall surface of the gate structure over the substrate, and a channel layer disposed on a sidewall surface of the dielectric structure over the substrate. The gate structure includes a gate electrode layer and an interlayer insulation structure which are alternately stacked. The interlayer insulation structure includes a metal-organic framework layer.

Abstract: A lithium secondary battery comprises a cathode formed from a cathode active material including a first cathode active material particle and a second cathode active material particle, an anode and a separator interposed between the cathode and the anode. The first cathode active material particle includes a lithium metal oxide including a continuous concentration gradient in at least one region between a central portion and a surface portion. The second cathode active material particle includes a constant concentration composition.

Abstract: A method of manufacturing a semiconductor device comprises: forming a first array including a first bit line extending in a first direction, a first word line extending in a second direction intersecting the first direction, and a first transistor being located at a first intersection of the first word line and the first bit line, the first transistor being connected to the first word line and the first bit line; forming a first capacitor electrically connected to the first transistor, the first capacitor being located at a first part of the first intersection; and forming a second capacitor located at a second part of the first intersection.

Abstract: A nonvolatile memory device according to an embodiment includes a substrate, a gate electrode structure disposed on the substrate, a gate dielectric layer covering at least a portion of a sidewall surface of the gate electrode structure on the substrate, a channel layer and a resistance change structure that are sequentially disposed on the gate dielectric layer, and a plurality of bit line structures disposed inside the resistance change structure.

Abstract: A semiconductor memory device includes a channel layer, a gate electrode spaced apart from the channel layer, a blocking insulating layer between the gate electrode and the channel layer, a tunnel insulating layer between the channel layer and the blocking insulating layer, and nano-particles spaced apart from each other between the tunnel insulating layer and the blocking insulating layer.

Abstract: A cathode active material for a lithium secondary battery includes a lithium-transition metal composite oxide particle having a single particle shape, and a first coating layer formed on a surface of the lithium-transition metal composite oxide particle. The first coating layer includes a La—Zr—O compound. Life-span and capacity properties are improved by a combination of the lithium-transition metal composite oxide particle having the single particle shape and the first coating layer formed thereon.

Abstract: A cathode active material for a lithium secondary battery according to an embodiment of the present invention includes a lithium-transition metal composite oxide particle having a single particle shape, and a first coating layer formed on a surface of the lithium-transition metal composite oxide particle. The first coating layer includes a Sr—Zr—O compound. Life-span and capacity properties are improved by a combination of the lithium-transition metal composite oxide particle having the single particle shape and the first coating layer formed thereon.

Abstract: A nonvolatile memory device according to an embodiment includes a substrate having an upper surface, and a gate structure disposed over the substrate. The gate structure includes at least one gate electrode layer pattern and at least one gate insulation layer pattern, which are alternately stacked along a first direction perpendicular to the upper surface. The gate structure extends in a second direction perpendicular to the first direction. The nonvolatile memory device includes a ferroelectric layer disposed on at least a portion of one sidewall surface of the gate structure. The one sidewall surface of the gate structure forms a plane substantially parallel to the first and second directions. The nonvolatile memory device includes a channel layer disposed on the ferroelectric layer, and a source electrode structure and a drain electrode structure disposed to contact the channel layer and spaced apart from each other in the second direction.

Abstract: An adhesive film has an average slope of about ?9.9 to about 0, as measured over a temperature range of about ?20° C. to about 80° C. in a graph depicting a temperature-dependent storage modulus distribution of the adhesive film where the x-axis represents temperature (° C.) and the y-axis represents storage modulus (kPa). The adhesive film also has a storage modulus at about 80° C. of about 10 kPa to about 1,000 kPa.

Abstract: Provided is a method of manufacturing a cathode active material for a lithium secondary battery. The method of manufacturing a cathode active material for a lithium secondary battery includes mixing a transition metal macro precursor and a lithium precursor to prepare a preliminary lithium-transition metal composite oxide particle; calcining the prepared preliminary lithium-transition metal composite oxide particle; and pulverizing the calcined preliminary lithium-transition metal composite oxide particle to form lithium-transition metal composite oxide particle. Accordingly, the process may be easily performed and a single crystal cathode active material having a uniform size may be manufactured.

Abstract: A semiconductor memory device includes a tunnel insulating layer, a data storage layer, and a blocking insulating layer that are sequentially disposed. The tunnel insulating layer includes Metal Organic Frameworks (MOF) having a lower dielectric constant than a dielectric constant of the blocking insulating layer.

Abstract: Provided herein may be a semiconductor device. The semiconductor device may include a stack including word lines, a bit line penetrating the stack, a global bit line disposed above the stack, global word lines disposed above the stack, a common select line disposed above the stack, a first contact plug coupling the global bit line and the bit line to each other and penetrating the common select line, and second contact plugs coupling the global word lines and the word lines to each other respectively and penetrating the common select line.

Abstract: A nonvolatile memory device according to an embodiment includes a substrate having an upper surface, a source electrode structure disposed on the substrate, and a channel structure disposed over the substrate and disposed to contact one sidewall surface of the source electrode structure. In addition, the nonvolatile memory device includes a drain electrode structure disposed to contact one sidewall surface of the channel structure over the substrate. In addition, the nonvolatile memory device includes a plurality of ferroelectric structures extending in a first direction perpendicular to the substrate in the channel structure and disposed to be spaced apart from each other along the second direction perpendicular to the first direction. In addition, the nonvolatile memory device includes a gate electrode structure disposed in each of the plurality of ferroelectric structure to extend along the first direction.

Abstract: An electronic device includes a substrate, a source electrode layer and a drain electrode layer that are disposed to be spaced apart from each other over the substrate, a channel layer that is capable of receiving hydrogen, disposed between the source electrode layer and the drain electrode layer over the substrate, a proton conductive layer disposed on the channel layer, a hydrogen source layer disposed on the proton conductive layer, and a gate electrode layer disposed on the hydrogen source layer.

Abstract: The embodiments of the present disclosure relate to a radar device including an antenna unit including a transmission antenna for transmitting a transmission signal and a receiving antenna for receiving a reception signal reflected from a target, a signal processor configured to determine target direction information by using a phase difference between the reception signals received from the respective receiving antennas, and a controller configured to control to perform a first mode and a second mode for transmitting and receiving signals at different pulse repetition intervals, respectively.

Abstract: A cathode active material for a lithium secondary battery according to exemplary embodiments of the present invention includes a lithium metal oxide particle core part and an organic compound coating layer which includes a functional group containing a sulfur atom. The cathode active material may suppress side reactions with an electrolyte while maintaining the stability of the layered structure of the lithium metal oxide particles, suppress a gelation phenomenon of the slurry during manufacturing a cathode, and maintain the high energy, high output and long life-span characteristics of the lithium secondary battery.

Abstract: A nonvolatile memory device according to an embodiment includes a substrate and a gate structure disposed on the substrate. The gate structure includes at least one gate electrode layer and at least one interlayer insulation layer that are alternately stacked. In addition, the nonvolatile memory device includes a hole pattern penetrating the gate structure on the substrate, and a gate insulation layer, a first ion retention layer, a second ion retention layer, and a channel layer sequentially covering a sidewall surface of the gate electrode layer in the hole pattern. The first and second ion retention layers comprise ions exchangeable with each other.

Abstract: A method of programming a nonvolatile memory device including a plurality of memory cells is provided. Each of the plurality of memory cells includes a reversible resistance device. A target memory cell is selected from among the plurality of memory cells. A target resistance state for the reversible resistance device of the target memory cell is determined. A resistance state of the reversible resistance device of the target memory cell is read. The read resistance state is compared with the target resistance state. One of a positive program operation and a negative program operation is performed for the reversible resistance device of the target memory cell when the read resistance state is different from the target resistance state.