Abstract: There are provided a variable resistance memory device and a manufacturing method of the same. The variable resistance memory device includes: a first electrode; a second electrode arranged in a vertical direction from the first electrode; and an oxide layer having an oxygen deficient region extending in the vertical direction between the second electrode and the first electrode.

Abstract: A two-dimensional semiconductor transistor includes a gate electrode, a gate insulating layer disposed on the gate electrode, an organic dopant layer disposed on the gate insulating layer and comprising an organic material including electrons, a two-dimensional semiconductor layer disposed on the organic dopant layer, a source electrode disposed on the two-dimensional semiconductor layer, and a drain electrode disposed on the two-dimensional semiconductor layer and spaced apart from the source electrode. A hysteresis of the two-dimensional semiconductor transistor is reduced due to the two-dimensional semiconductor transistor including the organic dopant layer.

Abstract: A resistive memory device includes: conductive layers and interlayer insulating layers, which are alternatively stacked; a vertical hole vertically penetrating the conductive layers and the interlayer insulating layers; a gate insulating layer disposed over an inner wall of the vertical hole; a charge trap layer disposed over an inner wall of the gate insulating layer; a channel layer disposed over an inner wall of the charge trap layer; and a variable resistance layer disposed over an inner wall of the channel layer.

Abstract: A semiconductor device includes a substrate and a gate structure disposed over the substrate. The gate structure includes gate electrode layers and interlayer insulation structures that are alternately stacked with each other. The semiconductor device includes a dielectric structure disposed over the substrate to contact a sidewall surface of the gate structure, and a channel layer disposed on a sidewall surface of the dielectric structure over the substrate. Each of the interlayer insulation structure includes an insulation layer and a metal-organic framework layer that are disposed on the same plane.

Abstract: Proposed is a cartridge (1000) for accommodating a microneedle patch (100) comprising: a body portion (1002) which is accommodated in an accommodating part formed in a housing (201) of an applicator (200), and a flat plate portion (1004), mounted on the body portion (1002), comprising a flat plate opening (1006) through which a pressurizing part (404) of a drive mechanism (400) passes and a fixing portion (1005) operatively coupled to the drive mechanism (400), wherein the flat plate portion (1004) is rotated according to a driving of the drive mechanism (400) and is located below the microneedle patch (100) to supports the microneedle patch (100).

Abstract: One embodiment of the present disclosure relates to a vehicle radar apparatus and a method of controlling the same. The radar apparatus according to the present embodiment may include an antenna unit including Nt transmitting antennas and Nr receiving antennas, wherein one of the Nt transmitting antennas is vertically offset from the other transmitting antennas, or one of the Nr receiving antennas is vertically offset from the other receiving antennas, a transceiver configured to control the Nt transmitting antennas to transmit a phase shift transmission signal having N different phase shift values (an) and control the Nr receiving antennas to receive a reflected signal reflected from a target, and a signal processor configured to determine a height (h) of the target based on a discrete phase shift value (amax) that is a phase shift value having the greatest reception power among N phase shift values.

Abstract: A single-wire communication system and a control method of the single-wire communication system are disclosed. A single-wire communication system includes a single-wire, a first communication module and a second communication module. The first communication module includes a plurality of current conveyors so as to communicate high-speed signals only with current freely from a capacitive load of the single-wire. The first communication module is connected to one side of the single-wire. The second communication module includes a plurality of current conveyors so as to communicate high-speed signals only with current freely from a capacitive load of the single-wire. The second communication module is connected to another side of the single-wire.

Abstract: A lithium secondary battery according to an embodiment of the present invention comprises a cathode and an anode. The cathode comprises lithium metal oxide particles that contains lithium and metal elements. The lithium metal oxide particles have a concentration gradient region formed in at least one region between a center and a surface. A concentration of at least one of the metal elements is changed in the concentration gradient region. The anode comprises an anode active material that contains a silicon-based active material and a carbon-based active material. A content of the carbon-based active material in the anode active material is greater than a content of the silicon-based active material.

Abstract: An adhesive film and a display member, the adhesive film being formed of an adhesive composition that includes a monomer mixture comprising a hydroxyl group-containing (meth)acrylate and a comonomer, wherein the adhesive film has a recovery rate of about 40% to about 99%, the recovery rate being determined according to Method A as described herein, and wherein the adhesive film has a bubble generation area of about 0%, the bubble generation area being determined according to Method B as described herein.

Abstract: A system of modeling an anti-lock brake system (ABS) controller of a vehicle includes: a vehicle speed estimation network configured to estimate a vehicle speed through machine learning using wheel speed data of each of a plurality of wheels of the vehicle; a wheel speed state estimation network configured to estimate a time series characteristic of the wheel speed through machine learning using information on the wheel speed data and information on whether a brake pedal is depressed; and a classification network configured to estimate a braking mode for controlling an increase, a decrease, or steady state of a braking pressure of each wheel through machine learning using speed estimation data of the vehicle estimated by the vehicle speed estimation network and time series characteristic estimation data of the wheel speed estimated by the wheel speed state estimation network.

Abstract: A nonvolatile memory device includes a substrate having an upper surface, and a gate structure disposed over the substrate. The gate structure includes at least one gate electrode layer pattern and at least one gate insulation layer pattern, which are alternately stacked along a first direction perpendicular to the upper surface. The gate structure extends in a second direction perpendicular to the first direction. The nonvolatile memory device includes a ferroelectric layer disposed on at least a portion of one sidewall surface of the gate structure. The one sidewall surface of the gate structure forms a plane substantially parallel to the first and second directions. The nonvolatile memory device includes a channel layer disposed on the ferroelectric layer, and a source electrode structure and a drain electrode structure disposed to contact the channel layer and spaced apart from each other in the second direction.

Abstract: A memory cell includes a first electrode, a second electrode, a variable resistance layer located between the first electrode and the second electrode, and a ferroelectric layer located between the variable resistance layer and the second electrode, wherein the variable resistance layer is maintained in an amorphous state during a program operation.

Abstract: A method of programming a nonvolatile memory device including a plurality of memory cells is provided. Each of the plurality of memory cells includes a reversible resistance device. A target memory cell is selected from among the plurality of memory cells. A target resistance state for the reversible resistance device of the target memory cell is determined. A resistance state of the reversible resistance device of the target memory cell is read. The read resistance state is compared with the target resistance state. One of a positive program operation and a negative program operation is performed for the reversible resistance device of the target memory cell when the read resistance state is different from the target resistance state.

Abstract: The described technology relates to a method for detecting abnormal transaction data between computing devices in a communication network using valid transaction patterns and a server for performing the same. In one aspect, the method includes receiving, at a data collection processor, from an institution server computer, a plurality of pieces of transaction data communicated between two or more of the plurality of user devices, and determining, at a data processor, at least one piece of valid transaction data from the plurality of pieces of transaction data. The method may also include generating, at the data collection processor, a valid transaction pattern based on the determined valid transaction data. The method may further include detecting, at an abnormal transaction detection processor, an existence of an abnormal transaction data between two or more of the plurality of user devices based on the generated valid transaction pattern.

Abstract: The disclosure provides recombinant polypeptides for treating or preventing viral infection comprising an immunoglobulin Fc fragment and at least one viral receptor or fragment thereof. Also provided are RNA molecules, therapeutic compositions, and expression systems comprising such recombinant polypeptides, along with methods of preventing or treating a viral infection in a subject in need thereof, comprising administering such recombinant polypeptides to a subject or patient.

Abstract: A nonvolatile memory device according to an embodiment includes a substrate having an upper surface, a gate line structure disposed over the substrate, a gate dielectric layer covering one sidewall surface of the gate line structure and disposed over the substrate, a channel layer disposed to cover the gate dielectric layer and disposed over the substrate, a bit line structure and a resistance change structure to contact different portions of the channel layer over the substrate, and a source line structure disposed in the resistance change structure. The gate line structure includes at least one gate electrode layer pattern and interlayer insulation layer pattern that are alternately stacked along a first direction perpendicular to the substrate, and extends in a second direction perpendicular to the first direction.

Abstract: A ferroelectric component includes a first electrode, a tunnel barrier layer disposed on the first electrode to include a ferroelectric material, a tunneling control layer disposed on the tunnel barrier layer to control a tunneling width of electric charges passing through the tunnel barrier layer, and a second electrode disposed on the tunneling control layer.

Abstract: The present disclosure relates to a vehicle control system, a sensing device and a sensing data processing method. In particular, the sensing device according to the present disclosure may include an information receiver for receiving at least one of driving route information of a vehicle and lane information, a control target selector for presetting at least one of a filter condition and a tracking condition based on the received information, and selecting a control target among one or more objects existing in front of the vehicle based on at least one of the filter condition and the tracking condition, and an output for capturing and outputting a sensing data including a control target information for the control target.

Abstract: An adhesive film is formed of an adhesive composition that includes a monomer mixture including a hydroxyl group-containing (meth)acrylate and a comonomer, and nanoparticles. The adhesive film has a glass transition temperature (Tg) of about ?20° C. or less, an index of refraction of about 1.40 to about 1.55, and a haze of about 3% or less at a thickness of 100 ?m.