Abstract: A battery cell classification system may include a charging voltage differential value measurement device configured to determine a charging voltage differential value of a battery cell before assembling a battery module, a uniformity factor extractor configured to extract a uniformity factor based on determining uniformity of the battery cell among determined charging voltage differential values, and a controller configured to compare a uniformity factor of the battery cell with a reference uniformity value, so as to reject the battery cell as a defective cell if it has the uniformity value smaller than the reference uniformity value, or to classify battery cell based on uniformity factor if it has the uniformity value at or above than the reference uniformity value.

Abstract: Provided are a system and method for controlling a workflow across domains on the basis of a hierarchical engine framework. Inventive workflow control makes it possible to configure a flexible hierarchical engine framework and provide a workflow service with low latency. Also, the system and method make it possible to control a workflow by building an engine and a data pipeline across domains.

Abstract: A deep learning-based MLCC stacked alignment inspection system includes an integrated defect detection unit configured to detect core areas requiring inspection of image data in which a stacked structure is photographed from a semiconductor MLCC chip by using at least one deep learning-based core area detection model, perform segmentation in the detected core areas, determine whether a defect exists according to a standard margin percentage range, and enable defect detection by generating normal and/or defective data based on the determination result, a result analysis unit configured to perform visualization for respective results of the core area detection, segmentation, and defect detection of the integrated defect detection unit, and provide stepwise analysis data for the visualized respective results so as to determine whether to modify corresponding data, and a data storage configured to store the normal and/or defective data, and stepwise analysis data.

Abstract: The present exemplary embodiments propose a fiber-based strain sensor including: at least one first electric conductive line including a first flexible part having electric conductivity and at least one second electric conductive line which is woven to be in partially contact with the first electric conductive line, includes a second flexible part having electric conductivity, and is implemented to conduct electricity with the first flexible part having electric conductivity in a stretched state.

Abstract: An embodiment antioxidant liquid for a fuel cell is provided. The antioxidant liquid is to be charged in a gas diffusion layer of a fuel cell stack, and the antioxidant liquid includes a solvent, an oxide as a first antioxidant dispersed in the solvent, and a salt as a second antioxidant dissolved in the solvent.

Abstract: A resolution controller for a stretchable display includes a resolution-setting multiplexer module to receive a resolution selecting signal and to apply a gate in panel (GIP) selecting signal, in response to the resolution selecting signal, and a GIP module configured to generate a gate driving signal in response to the GIP selecting signal applied by the resolution-setting multiplexer module, and apply the gate driving signal to a pixel driving flexible printed circuit board (FPCB) of the stretchable display to drive an open pixel depending on a stretched state of the stretchable display.

Abstract: A deep learning-based MLCC stacked alignment inspection system includes an integrated defect detection unit configured to detect core areas requiring inspection of image data in which a stacked structure is photographed from a semiconductor MLCC chip by using at least one deep learning-based core area detection model, perform segmentation in the detected core areas, determine whether a defect exists according to a standard margin percentage range, and enable defect detection by generating normal and/or defective data based on the determination result, a result analysis unit configured to perform visualization for respective results of the core area detection, segmentation, and defect detection of the integrated defect detection unit, and provide stepwise analysis data for the visualized respective results so as to determine whether to modify corresponding data, and a data storage configured to store the normal and/or defective data, and stepwise analysis data.

Abstract: A phototransistor includes a gate electrode, a semiconductor layer disposed on the gate electrode, a gate insulating layer disposed between the gate electrode and the semiconductor layer, a source electrode, a drain electrode, and a porous layer disposed on the source electrode, the semiconductor layer, and the drain electrode, where a plurality of holes is defined in the porous layer.

Abstract: Provided is a computing device for generating an index value for comparing the body composition change performance between users having different body compositions. The computing device can comprise: a communication unit for acquiring body composition data of a user from a connected body composition measurement device or updating a body composition change amount of the user for a first period of time; a processor for calculating a second period of time required for a pre-selected user group in order to achieve the body composition change amount; and an output unit for generating an index value for comparing the body composition change performance between users having different body compositions by using the first period of time and the second period of time.

Abstract: Disclosed is a method for manufacturing an oxide thin film transistor including forming a gate electrode on a substrate, forming an oxide semiconductor thin film provided on the substrate to be insulated from the gate electrode by using a first mask, forming an electrode on the oxide semiconductor thin film by using the first mask, applying an oxidizer in one area of the electrode, and annealing the electrode, on which the oxidizer is applied.

Abstract: A transistor includes a gate electrode, an active layer facing the gate electrode, and a source electrode and a drain electrode connected to the active layer. The active layer includes a lower active layer including an oxide-based semiconductor material, and an upper active layer including the oxide-based semiconductor material and an oxygen-gettering material.

Abstract: A photo transistor and a display device employing the photo transistor are provided. The photo transistor includes a gate electrode disposed on a substrate, a gate insulating layer that electrically insulates the gate electrode, a first active layer overlapping the gate electrode and including metal oxide, wherein the gate insulating layer is disposed between the gate electrode and the active layer, a second active layer disposed on the first active layer and including selenium, and a source electrode and a drain electrode respectively electrically connected to the second active layer.

Abstract: Disclosed is a driving circuit of a stretchable display capable of being stretched, which includes a driving part that includes a driving transistor connected with a light-emitting element and drives the light-emitting element depending on a signal of a data line, a switching transistor that is connected between the driving part and the data line and includes a gate terminal connected with a first gate line, and a stretch-sensitive sensor that is connected with the switching transistor between the driving part and the data line, and the stretch-sensitive sensor may include a stretch-sensitive material whose resistance characteristic changes depending on a stretching force applied to the stretchable display.

Abstract: An apparatus for driving a stretchable display includes a first pixel driving signal generating module to generate a first pixel driving signal including data to be displayed on a stretchable display, a first pixel driving circuit to receive the first pixel driving signal to drive a first pixel, a second pixel driving circuit to drive a second pixel, wherein the driving of the second pixel is determined depending on whether the stretchable display is stretched, and a second pixel driving signal generating module to receive the first pixel driving signal and a power signal and to generate a second pixel driving signal to be applied to the second pixel driving circuit by using one of the first pixel driving signal and the power signal, based on a stretching state signal generated depending on whether the stretchable display is stretched.

Abstract: Disclosed is a driving circuit of a stretchable display capable of being stretched, which includes a driving part that includes a driving transistor connected with a light-emitting element and drives the light-emitting element depending on a signal of a data line, a switching transistor that is connected between the driving part and the data line and includes a gate terminal connected with a first gate line, and a stretch-sensitive sensor that is connected with the switching transistor between the driving part and the data line, and the stretch-sensitive sensor may include a stretch-sensitive material whose resistance characteristic changes depending on a stretching force applied to the stretchable display.

Abstract: The present exemplary embodiments provide a sensor of monitoring a biosignal in a low power mode or a high precision mode by interacting a plurality of photo transistors implemented by light absorption layers having different organic orientations by a solution process and a manufacturing method thereof.

Abstract: A stretchable display device capable of correcting resolution depending on a stretching degree is disclosed. The stretchable display device includes a stretchable substrate, first light emitting pixels including first light emitting elements arranged spaced apart from each other on the stretchable substrate, deformation switch parts arranged between the first light emitting pixels on the stretchable substrate and stretched and deformed according to stretch of the stretchable substrate, and second light emitting pixels including second light emitting elements arranged between the first light emitting pixels on the stretchable substrate. The second light emitting pixels are controlled to emit light depending on physical deformation of the deformation switch parts.

Abstract: The present disclosure provides a phototransistor and a manufacturing method therefor, the phototransistor having a defective oxide ray absorption layer introduced to an oxide semiconductor phototransistor through a solution process or a defective oxide ray absorption part introduced to an interface between a gate insulation film and an oxide semiconductor layer through interface control, which forms damage, thereby improving light absorption in the range of a visible light region.

Abstract: An apparatus for driving a stretchable display includes a first pixel driving signal generating module to generate a first pixel driving signal including data to be displayed on a stretchable display, a first pixel driving circuit to receive the first pixel driving signal to drive a first pixel, a second pixel driving circuit to drive a second pixel, wherein the driving of the second pixel is determined depending on whether the stretchable display is stretched, and a second pixel driving signal generating module to receive the first pixel driving signal and a power signal and to generate a second pixel driving signal to be applied to the second pixel driving circuit by using one of the first pixel driving signal and the power signal, based on a stretching state signal generated depending on whether the stretchable display is stretched.

Abstract: A transistor includes a gate electrode, an active layer facing the gate electrode, and a source electrode and a drain electrode connected to the active layer. The active layer includes a lower active layer including an oxide-based semiconductor material, and an upper active layer including the oxide-based semiconductor material and an oxygen-gettering material.