Patents by Inventor Hyun-Jae Kim

Hyun-Jae Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR PROVIDING ALTERNATIVE SERVICE AND ELECTRONIC DEVICE THEREOF
    Publication number: 20160048498
    Abstract: An electronic device and method are disclosed. The method is operable on the electronic device to parse attribute information of an electronic document displayed on a display unit of the electronic device, and when a component of the electronic document is activated, detect a format of the activated component based on the parsed attribute information, and when the detected format indicates visual media, output an alternative notification comprising at least one a notification in a different format than the detected format.
    Type: Application
    Filed: August 18, 2015
    Publication date: February 18, 2016
    Inventors: Hyun-Jae KIM, Myung-Su KANG, Jeong-Yong KIM, Jung-Won KIM, Sang-Bae SHIN
  • Method and apparatus for managing synchronization groups in wireless communication system
    Patent number: 9252901
    Abstract: A synchronization group management apparatus of a node recognizes a node belonging to a different group if groups having mobility are moved and located in the same area, and performs an operation of merging the different groups into one group by changing the frame start time and the synchronization reference time of the node.
    Type: Grant
    Filed: December 6, 2013
    Date of Patent: February 2, 2016
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Anseok Lee, Wooram Shin, Jihyung Kim, Hyun-jae Kim, Kwang Jae Lim, DongSeung Kwon
  • Method and apparatus for correcting reference time for distributed time synchronization
    Patent number: 9237539
    Abstract: In a wireless communication system formed of a plurality of nodes, an arbitrary node receives messages broadcasted from neighbor nodes and calculates amounts of changes in receiving times that are differences between receiving times when the messages are currently received and receiving times when the messages are previously received with respect to the neighbor nodes. The node corrects reference time thereof based on the amounts of changes calculated with respect to the neighbor nodes.
    Type: Grant
    Filed: November 25, 2013
    Date of Patent: January 12, 2016
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Hyun-jae Kim, Jung Hyun Kim, Jihyung Kim, Kwang Jae Lim, DongSeung Kwon
  • Method of formation of tin oxide semiconductor thin film doped with antimony
    Patent number: 9224598
    Abstract: Provided is a composition for forming tin oxide semiconductor including a tin precursor compound, an antimony precursor compound, and a solvent, according to an aspect of the present disclosure. Also provided is a method of forming a tin oxide semiconductor thin film. The method includes preparing a composition including a tin precursor compound and an antimony precursor compound dissolved in a solvent; disposing the composition on a substrate; and performing a heat treatment on the substrate coated with the composition.
    Type: Grant
    Filed: December 5, 2013
    Date of Patent: December 29, 2015
    Assignees: SAMSUNG DISPLAY CO., LTD., INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
    Inventors: Chaun-Gi Choi, Yeon-Gon Mo, Hyun-Jae Kim, Hyun-Soo Lim, Si-Joon Kim, Tae-Soo Jung, You-Seung Rim
  • COMPOSITIONS FOR SOLUTION PROCESS, ELECTRONIC DEVICES FABRICATED USING THE SAME, AND FABRICATION METHODS THEREOF
    Publication number: 20150372148
    Abstract: Exemplary embodiments provide compositions for a solution process, electronic devices fabricated using the same, and fabrication methods thereof. An oxide nano-structure is formed using a sol-gel process. An oxide thin film transistor is formed using the oxide nano-structure.
    Type: Application
    Filed: August 31, 2015
    Publication date: December 24, 2015
    Inventors: Hyun Jae Kim, Woong Hee Jeong, Byung Du Ahn, Gun Hee Kim
  • OXIDE THIN FILM, METHOD FOR POST-TREATING OXIDE THIN FILM AND ELECTRONIC APPARATUS
    Publication number: 20150364554
    Abstract: Provided are an oxide thin film, a method for post-treating an oxide thin film and an electronic apparatus. An oxide thin film is an oxide thin film with a single layer including a metal oxide, and the physical properties of the oxide thin film may change in the thickness direction thereof.
    Type: Application
    Filed: June 12, 2015
    Publication date: December 17, 2015
    Inventors: HYUN JAE KIM, Young Jun TAK, Doo Hyun YOON, Sung Pyo PARK, Heesoo LEE
  • CORE MATERIAL FOR VACUUM INSULATION PANEL, METHOD FOR MANUFACTURING THEREOF, AND VACUUM INSULATION PANEL USING SAME
    Publication number: 20150354744
    Abstract: Provided are a core material for vacuum insulation panel, comprising about 99% to about 100% by weight of a fiberglass and about 0% to 1% by weight of a carbonized binder, and a vacuum insulation panel comprising thereof. Further, provided is a method for manufacturing a core material for vacuum insulation panel, comprising: providing a fiberglass board, including a fiberglass with an average diameter of about 6 ?m to about 10 ?m; removing a binder by heat treating the fiberglass board; and removing the binder to form a core material for vacuum insulation panel comprising about 99% to about 100% by weight of a fiberglass and about 0% to 1% by weight of a carbonized binder.
    Type: Application
    Filed: December 4, 2013
    Publication date: December 10, 2015
    Inventors: Ju Hyung LEE, Myung LEE, Seong Moon JUNG, Eun Joo KIM, Hyun Jae KIM
  • Method of frequency synchronization in distributed network
    Patent number: 9209959
    Abstract: A method and apparatus for synchronizing a carrier frequency of a node included in a distributed network are provided. The apparatus includes a frequency offset estimating unit, an offset average value calculating unit, and a frequency adjustment value calculating unit. The method includes receiving preambles from a plurality of nodes adjacent to the node, estimating offsets of the carrier frequencies from the received preambles for each of the plurality of neighbor nodes, calculating an average value of the estimated offsets, calculating an adjustment value of the carrier frequencies with respect to the entirety of the plurality of neighbor nodes by using the average value, and adjusting a carrier frequency of the node on the basis of the adjustment value.
    Type: Grant
    Filed: March 26, 2013
    Date of Patent: December 8, 2015
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Jung Hyun Kim, Jihyung Kim, Hyun-jae Kim, Kwang Jae Lim, DongSeung Kwon
  • Method of low-duty mode operation of femtocell base station
    Patent number: 9185679
    Abstract: A method of setting a cycle of a low-duty mode in a femto base station is provided. The cycle of the low-duty mode has a pattern in which an available interval and an unavailable interval repeatedly appear, and the available interval is set to include a paging listening interval of a paging cycle. A method of setting a cycle of a low-duty mode in a femto base station having a service area overlapping with that of a macrocell is provided. An unavailable interval is set by taking the overlapping degree of the service area of the femto base station with the macrocell into consideration. A method of setting a cycle of a low-duty mode in a plurality of femto base stations operated in the low-duty mode is provided. The same cycle can be set for a plurality of base stations.
    Type: Grant
    Filed: August 10, 2010
    Date of Patent: November 10, 2015
    Assignees: Samsung Electronics Co., Ltd., Electronics and Telecommunications Research Institute
    Inventors: Sung Cheol Chang, Won-Ik Kim, Hyun-Jae Kim, Sung Kyung Kim, Chul Sik Yoon
  • METHOD FOR FORMING OXIDE THIN FILM AND METHOD FOR FABRICATING OXIDE THIN FILM TRANSISTOR EMPLOYING GERMANIUM DOPING
    Publication number: 20150279671
    Abstract: The present invention disclosed herein relates to a method for forming an oxide film and a method for fabricating an oxide thin film transistor, and more particularly, to a method for forming an oxide film and a method for fabricating an oxide thin film transistor which employ a germanium doping. A method for forming an oxide thin film according to an embodiment of the present invention, the method includes: applying a metal compound on a substrate; and heat-treating the substrate, wherein the metal compound solution is prepared by dissolving an indium compound, a zinc compound and a germanium compound in a solvent.
    Type: Application
    Filed: March 17, 2015
    Publication date: October 1, 2015
    Inventors: Hyun Jae Kim, Chul Ho Kim, Si Joon Kim, Tae Soo Jung
  • Compositions for solution process, electronic devices fabricated using the same, and fabrication methods thereof
    Patent number: 9123818
    Abstract: Exemplary embodiments provide compositions for a solution process, electronic devices fabricated using the same, and fabrication methods thereof. An oxide nano-structure is formed using a sol-gel process. An oxide thin film transistor is formed using the oxide nano-structure.
    Type: Grant
    Filed: May 24, 2010
    Date of Patent: September 1, 2015
    Assignee: Industry-Academic Cooperation Foundation, Yonsei University
    Inventors: Hyun Jae Kim, Woong Hee Jeong, Byung Du Ahn, Gun Hee Kim
  • Composition for manufacturing oxide semiconductor and method for manufacturing thin-film transistor substrate using the same
    Patent number: 9115287
    Abstract: According to a method of manufacturing a thin film transistor substrate, a composition including a metal oxalate and a solvent for manufacturing an oxide semiconductor is coated to form a thin film, the thin film is annealed, and the thin film is patterned to form a semiconductor pattern.
    Type: Grant
    Filed: November 6, 2012
    Date of Patent: August 25, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yeon-Taek Jeong, Bo-Sung Kim, Doo-Hyoung Lee, Doo-Na Kim, Eun-Hye Park, Dong-Lim Kim, Hyun-Jae Kim, You-Seung Rim, Hyun-Soo Lim
  • METHODS OF FORMING OXIDE SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING DISPLAY DEVICES HAVING OXIDE SEMICONDUCTOR DEVICES
    Publication number: 20150140699
    Abstract: A method of forming an oxide semiconductor device may be provided. In the method, a substrate comprising a first major surface and a second major surface that faces away from the first major surface may be provided. An oxide semiconductor device may be formed over the first major surface to provide an intermediate device, and the semiconductor device may comprise an oxide active layer. The intermediate device may be subjected to ultraviolet (UV) light (e.g., ultraviolet ray irradiation process) for a first period, and subjected to heat (e.g., thermal treatment process) for a second period. The first and second periods may at least partly overlap.
    Type: Application
    Filed: August 8, 2014
    Publication date: May 21, 2015
    Inventors: Yeon-Hong Kim, Byung-Du AHN, Hyeon-Sik KIM, Yeon-Gon MO, Ji-Hun LIM, Hyun-Jae KIM
  • Polysilicon thin film transistor array panel and manufacturing method thereof
    Patent number: 9005697
    Abstract: A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; forming a gate insulating layer on the polysilicon layer; forming a plurality of gate lines on the gate insulating layer; forming a first interlayer insulating layer on the gate lines; forming a plurality of data lines on the first interlayer insulating layer; forming a second interlayer insulating layer on the data lines; and forming a plurality of pixel electrodes on the second interlayer insulating layer, wherein the mask comprises a plurality of transmitting areas and a plurality of blocking areas arranged in a mixed manner.
    Type: Grant
    Filed: October 3, 2007
    Date of Patent: April 14, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Hyun-Jae Kim, Sook-Young Kang, Dong-Byum Kim, Su-Gyeong Lee, Myung-Koo Kang
  • Method and apparatus for managing wireless network
    Patent number: 8989144
    Abstract: If a target node that enters into a transmission range is sensed, a mesh node of a wireless communication system selects an agent node having itself and a target node as a neighboring node among a plurality of neighboring nodes to form a link with the target node through the agent node. Also, the mesh node deletes the formed link if a target node that is out of a transmission range among a plurality of neighboring nodes is sensed, and forms a substitution path for at least a portion among an entire path of a connection including the deleted link.
    Type: Grant
    Filed: December 5, 2012
    Date of Patent: March 24, 2015
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Anseok Lee, Wooram Shin, Hyun-jae Kim, Kwang Jae Lim, DongSeung Kwon
  • METHOD AND APPARATUS FOR BEAMFORMING IN WIRELESS COMMUNICATION SYSTEM
    Publication number: 20150080004
    Abstract: A beamforming apparatus and method for expanding coverage of a control channel are provided, by which neighboring communication devices are classified according to the number of beams that they can receive, and therefore the frequency or period of beam transmission is adjusted to transmit a control channel by a beamforming method. Hence, an overhead reduction and an increase in transmission rate can be achieved, and coverage holes can be prevented.
    Type: Application
    Filed: May 2, 2014
    Publication date: March 19, 2015
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Wooram SHIN, Hyun-jae KIM, Yong Su LEE, Anseok LEE, Kwang Jae LIM, DongSeung KWON
  • THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20150069382
    Abstract: A thin film transistor substrate includes a substrate, a data line disposed on the substrate and which extends substantially in a predetermined direction, a light blocking layer disposed on the substrate and including a metal oxide including zinc manganese oxide, zinc cadmium oxide, zinc phosphorus oxide or zinc tin oxide, a gate electrode disposed on the light blocking layer, a signal electrode including a source electrode and a drain electrode spaced apart from the source electrode, where the source electrode is connected to the data line, and a semiconductor pattern disposed between the source electrode and the drain electrode.
    Type: Application
    Filed: August 25, 2014
    Publication date: March 12, 2015
    Inventors: Byung-Du AHN, Ji-Hun LIM, Jin-Hyun PARK, Hyun-Jae KIM
  • METHOD OF FORMING TIN OXIDE SEMICONDUCTOR THIN FILM
    Publication number: 20150064839
    Abstract: A method of forming a tin oxide semiconductor thin film includes preparing a precursor solution including a tin oxide semiconductor, coating the precursor solution on a substrate; and performing a heat treatment on the substrate coated with the precursor solution. A tin compound having a different tin valence according to a semiconductor type of the tin oxide semiconductor may be used in the precursor solution.
    Type: Application
    Filed: July 17, 2014
    Publication date: March 5, 2015
    Inventors: Chaun-Gi CHOI, Yeon-Gon MO, Hyun-Jae KIM, Hyun-Soo LIM, Si-Joon KIM, Tae-Soo JUNG, You-Seung RIM
  • Multi-carriers managing device and method and sleep mode operating method of terminal
    Patent number: 8971224
    Abstract: A multi-carriers management device of a communication system supporting multi-carriers requests a terminal attempting to enter a sleep window to change a primary carrier, and transmits a control message to the terminal through the changed primary carrier during the sleep window.
    Type: Grant
    Filed: October 30, 2009
    Date of Patent: March 3, 2015
    Assignees: Samsung Electronics Co., Ltd., Electronics and Telecommunications Research Institute
    Inventors: Eunkyung Kim, Juhee Kim, Hyun-Jae Kim, Kyung Soo Kim
  • STRUCTURE FOR PREVENTING ECCENTRICITY OF MOVABLE CONTACT IN VACCUM CIRCUIT BREAKER
    Publication number: 20150034598
    Abstract: The present invention relates to a vacuum circuit breaker, and more particularly, to a structure for preventing the eccentricity of a movable contact in a vacuum circuit breaker, wherein the concentricity of a fixed contact and the movable contact is maintained by preventing the eccentricity of and maintaining the straightness of the movable contact when the vacuum circuit breaker opens/closes so as to improve sealing performance and to prevent the increase in temperature.
    Type: Application
    Filed: December 18, 2012
    Publication date: February 5, 2015
    Inventor: Hyun-jae Kim