Abstract: An electronic device and method are disclosed. The method is operable on the electronic device to parse attribute information of an electronic document displayed on a display unit of the electronic device, and when a component of the electronic document is activated, detect a format of the activated component based on the parsed attribute information, and when the detected format indicates visual media, output an alternative notification comprising at least one a notification in a different format than the detected format.

Abstract: A workflow engine framework for creating a single-domain adaptive and a cross-domain adaptive workflow performing platform is disclosed. The workflow engine framework includes: a resource management unit configured to manage resources including engine components and workflow property specification components; a system configuration unit configured to create an engine by assembling the property specification components; and a system control unit configured to drive and execute one or more engines. Further the workflow engine framework is allocated to each of two or more different signal domains and forms a cross-domain adaptive workflow engine framework.

Abstract: A photocatalytic functional film has a structure of a substrate, a barrier layer and a photocatalytic layer stacked one on another. The barrier layer is a SiO2 film, the photocatalyst layer comprises an amorphous TiO2 film, and particles of visible light responsive photocatalytic material formed on the surface of the amorphous TiO2 film. A method for producing a photocatalytic functional film includes: adding an alcohol solvent and an acid to a silicate precursor to obtain a SiO2 sol by dehydration and de-alcoholization reaction; applying and drying the SiO2 sol on a substrate to form a barrier layer; adding an alcohol solvent and an acid to a titanium precursor to obtain a TiO2 amorphous sol by dehydration and de-alcoholization reaction; and applying and drying a composition formed by mixing particles of visible light responsive photocatalyst material with the TiO2 amorphous sol on the barrier layer, to form a photocatalyst layer.

Abstract: A photocatalytic functional film has a structure of a substrate, a barrier layer and a photocatalytic layer stacked one on another. The barrier layer is an amorphous TiO2 film, the photocatalyst layer comprises an amorphous TiO2 film, and particles of visible light responsive photocatalytic material formed on the surface of the amorphous TiO2 film. A method for producing a photocatalytic functional film includes: adding an alcohol solvent and an acid to a titanium precursor to obtain a TiO2 amorphous sol by dehydration and de-alcoholization reaction; applying and drying the TiO2 amorphous sol on a substrate to form a barrier layer; and applying and drying a composition formed by mixing particles of visible light responsive photocatalyst material with the TiO2 amorphous sol on the barrier layer, to form a photocatalyst layer.

Abstract: A barrier film and a method of manufacturing the barrier film are provided. The method includes performing high-pressure thermal treatment under certain conditions on an oxide thin film deposited by sputtering deposition or atomic layer deposition (ALD) to manufacture a barrier film with improved moisture resistance. According to the method, moisture resistance of the barrier film can be improved at a low process temperature by using both thermal energy and pressure energy. The barrier film provided herein can be useful as a barrier film for solar cells.

Abstract: An electronic device and a method for operating the electronic device are provided. The electronic device includes a secure memory including at least one profile, a processor configured to generate profile extended information for each of the at least one profile, based on profile information, update the profile extended information based on network information obtained by a network search, a memory configured to store the profile extended information, and a communication interface configured to perform the network search.

Abstract: Disclosed are an oxide thin-film transistor and a method of fabricating the same. The oxide thin-film transistor according to an embodiment of the present disclosure includes a gate electrode formed on a substrate; a gate insulating layer formed on the gate electrode; and an oxide thin film formed on the gate insulating layer, wherein the oxide thin film include a channel region, source region and drain regions disposed on the channel region and spaced apart from each other, and a concentration profile due to a dopant diffused from the gate insulating layer, wherein the channel region operates as a channel layer by the concentration profile.

Abstract: Provided is a data meta-scaling method. The data meta-scaling method optimizes an abbreviation criterion for abbreviating data through continuous knowledge augmentation in various dimensions which enable expression of data in a process of performing machine learning.

Abstract: Provided are a self-learning system and method for automatically performing machine learning (ML). The self-learning system includes a memory configured to store an ML knowledge database (DB) in which ML knowledge is stored and a program for automatically performing ML based on request information of a user, and a processor configured to execute the program stored in the memory. Here, when executing the program, the processor creates or recommends at least one workflow corresponding to the request information of the user based on the ML knowledge stored in the ML knowledge DB and generates an execution code for performing the created or recommended workflow.

Abstract: Disclosed are an oxide thin film transistor and a method of fabricating the same. The oxide thin film transistor according to an embodiment of the present disclosure includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor layer as a semiconductor active layer, and source and drain electrodes formed on the oxide semiconductor layer. The oxide semiconductor layer is activated by heat of less than 300° C. and a change in the magnetic flux of an applied magnetic field. More specifically, the activation proceeds by activation energy provided by Joule heat generated from eddy current occurring in the oxide semiconductor layer by a change in the magnetic flux, and the heat of less than 300° C.

Abstract: Provided herein is a communication method using MIMO (Multiple-Input Multiple-Output) technology for communicating with a terminal included in each of a plurality of base station cells using a communication apparatus, the method including calculating, by the communication apparatus, the number of terminals included inside a base station cell; generating, by the communication apparatus, pilot signals corresponding to the calculated number of terminals; and allocating, by the communication apparatus, the pilot signals to a terminal that may maximize a network capacity based on the generated pilot signals.

Abstract: Provided are a data processing apparatus and method for merging and processing deterministic knowledge and non-deterministic knowledge. The data processing apparatus and method may efficiently process various real-time and large-scale data to convert the data into knowledge by merging and processing non-deterministic knowledge and also deterministic knowledge perceived by an expert. Thus, it is possible to adaptively operate in accordance with a dynamically changing application service environment by converting a conversion rule for converting collected data generated from an application service system into semantic data, a context awareness rule for perceiving context information from given information, and a user query for searching for knowledge information into knowledge and gradually augmenting the knowledge information in accordance with an application service environment.

Abstract: Disclosed is a method for repairing an oxide thin film, including repairing the oxide thin film by forming a repairing material that contains an oxide at a defect of the oxide thin film.

Abstract: The present invention provides a glass fiber board comprising a glass fiber and an inorganic binder, wherein the inorganic binder comprises an aluminum phosphate. The present invention provides a method for preparing the glass fiber board comprising (a) preparing an inorganic binder solution comprising an aluminum phosphate (b) applying the inorganic binder solution comprising the aluminum phosphate to a glass fiber; (c) compressing the glass fiber to which the inorganic binder solution comprising the aluminum phosphate is applied; and (d) drying the compressed glass fiber.

Abstract: A barrier film and a method of manufacturing the barrier film are provided. The method includes performing high-pressure thermal treatment under certain conditions on an oxide thin film deposited by sputtering deposition or atomic layer deposition (ALD) to manufacture a barrier film with improved moisture resistance. According to the method, moisture resistance of the barrier film can be improved at a low process temperature by using both thermal energy and pressure energy. The barrier film provided herein can be useful as a barrier film for solar cells.

Abstract: Provided is an outer cover material for a vacuum insulator, sequentially comprising: one or more layers of a polyester film; a polyvinyl alcohol (PVOH) film adhered to a lower surface of the polyester film; and a sealing film adhered to a lower surface of the PVOH film. Also provided is a vacuum insulator, comprising a core material consisting of a fiberglass; and the outer cover material under internal pressure, accommodating the core material.

Abstract: A method includes forming a gate structure embedded in a dielectric layer above a substrate. A first recessing etch process is performed to remove a first portion of the gate structure. An oxidizing treatment is performed to oxidize a second portion of the gate structure after removing the first portion. A second recessing etch process is performed to remove at least the second portion to define a cap recess in the dielectric layer above the gate structure. A cap layer is formed in the cap recess.

Abstract: Provided are an oxide semiconductor device and a method for manufacturing same, wherein the oxide semiconductor device according to an embodiment of the inventive concept includes a substrate, and an oxide semiconductor layer on the substrate having different concentration of oxygen vacancy in the thickness direction.

Abstract: A photocatalytic functional film has a structure of a substrate, a barrier layer and a photocatalytic layer stacked one on another. The barrier layer is a SiO2 film, the photocatalyst layer comprises an amorphous TiO2 film, and particles of visible light responsive photocatalytic material formed on the surface of the amorphous TiO2 film. A method for producing a photocatalytic functional film includes: adding an alcohol solvent and an acid to a silicate precursor to obtain a SiO2 sol by dehydration and de-alcoholization reaction; applying and drying the SiO2 sol on a substrate to form a barrier layer; adding an alcohol solvent and an acid to a titanium precursor to obtain a TiO2 amorphous sol by dehydration and de-alcoholization reaction; and applying and drying a composition formed by mixing particles of visible light responsive photocatalyst material with the TiO2 amorphous sol on the barrier layer, to form a photocatalyst layer.

Abstract: There are provided a core material for vacuum insulator comprising an organic synthetic fiber, and at least one organic synthetic fiber bonded portion; and a preparation method therefor. In addition, provided is a vacuum insulator comprising the core material for vacuum insulator comprising the organic synthetic fiber, and the at least one organic synthetic fiber bonded portion.