Patents by Inventor Hyun Jun Yoon
Hyun Jun Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240100719Abstract: A gripper includes a body part, a finger base part coupled to the body part, and a finger part coupled to a first side of the body part or the finger base part and coupled to the body part or the finger base part to be reciprocal, wherein the finger part comprises a first link structure and a second link structure, sides of which are coupled to the finger base part, respectively, and wherein, in the first link structure and the second link structure, a first support area of the first link structure and a second support area of the second link structure reciprocate in only one of a plurality of directions that cross a direction in which the finger part reciprocates with respect to the finger base part.Type: ApplicationFiled: February 6, 2023Publication date: March 28, 2024Inventors: Beom Su Kim, Hyun Seop Lim, Ju Young Yoon, Kyu Jung Kim, Hyo Joong Kim, Seong Taek Hwang, Ho Jun Kim, Dong Jin Hyun, Min Woong Jeung
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Publication number: 20240100690Abstract: A gripper includes a body part, a finger base part coupled to the body part to be rotatable, the finger base part including a first finger base part and a second finger base part configured such that when the first finger base part is rotated in a first direction with respect to the body part, the second finger base part is provided to be rotatable in a second direction opposite the first direction with respect to the body part, and a finger part coupled to a first side of the body part or the finger base part to be reciprocal.Type: ApplicationFiled: February 6, 2023Publication date: March 28, 2024Inventors: Beom Su Kim, Hyun Seop Lim, Ju Young Yoon, Kyu Jung Kim, Hyo-Joong Kim, Seong Taek Hwang, Ho Jun Kim, Dong Jin Hyun, Min Woong Jeung
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Publication number: 20240083018Abstract: An embodiment device includes an input module including a motor configured to generate a rotational force, an output module configured to receive power from the input module to be rotatable, and a connection module having a first side coupled to the input module and a second side, opposite the first side, coupled to the output module, wherein the connection module is configured to transmit the power from the input module to the output module.Type: ApplicationFiled: February 9, 2023Publication date: March 14, 2024Inventors: Hyo-Joong Kim, Sang In Park, Ki Hyeon Bae, Ju Young Yoon, Beom Su Kim, Min Woong Jeung, Seong Taek Hwang, Ho Jun Kim, Hyun Seop Lim, Kyu Jung Kim
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Patent number: 11930361Abstract: A method of a wearable device displaying icons is provided. The method includes displaying a plurality of circular icons comprising a first circular icon located in a center area of a touch display in a first size and a second circular icon located outside of the center area of the touch display in a second size smaller than the first size, and based on a direction of a touch input received on the touch display, moving the plurality of circular icons such that the first circular icon is moved to a first position located outside of the center area of the touch display and the second circular icon is moved from a second position located outside the center area of the touch display to the center area of the touch display and enlarged in size from the second size to the first size.Type: GrantFiled: September 17, 2021Date of Patent: March 12, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Joon-kyu Seo, Young-joon Choi, Ji-yeon Kwak, Hyun-jin Kim, Yeo-jun Yoon
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Publication number: 20240066636Abstract: The present disclosure provides a laser protection system including a laser source configured to sequentially radiate a laser beam to two or more work targets that are discretely supplied, a plurality of protective lenses disposed between the laser source and the work targets, the plurality of protective lenses each allowing the laser beam to pass therethrough at different times, and a drive mechanism having the plurality of protective lenses movably mounted thereon.Type: ApplicationFiled: April 11, 2023Publication date: February 29, 2024Inventor: Hyun Jun Yoon
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Publication number: 20230335774Abstract: In accordance with an embodiment, a battery assembly device includes a holder unit configured to hold a structure and to transfer the structure to a target to be mounted, an alignment jig operatively associated with the holder unit, and configured to align the target, and a transfer unit configured to provide a moving force to the alignment jig.Type: ApplicationFiled: December 7, 2022Publication date: October 19, 2023Inventors: Jae Ho Chun, Hyun Jun Yoon
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Publication number: 20220285770Abstract: A battery module includes: a battery cell stack including a plurality of battery cells stacked on each other in a first direction; a pair of cell covers which is in surface contact with both side surfaces of the battery cell stack; a housing which covers side surfaces of the pair of cell covers in the first direction and top surfaces of the battery cell stack. In particular, a bottom side of the housing is open.Type: ApplicationFiled: August 24, 2021Publication date: September 8, 2022Applicants: HYUNDAI MOTOR COMPANY, KIA CORPORATIONInventors: Kyung Mo KIM, Jae Ho CHUN, Tae Hyuck KIM, Hyun Jun YOON, Ho Kyun Ju
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Patent number: 11031071Abstract: A nonvolatile memory device includes a memory cell region including first metal pads and a memory cell array, and a peripheral circuit region including second metal pads, row decoder circuitry that is connected to the rows of the memory cells through word lines and controls voltages of the word lines, and page buffer circuitry that is connected to the columns of the memory cells through bit lines. The page buffer circuitry is configured to obtain first values by performing a first sensing operation on first bit lines of the bit lines through the first transistors and obtain second values by performing a second sensing operation on the second bit lines of the bit lines through the second transistors, wherein the first values or the second values are inverted. The peripheral circuit region is vertically connected to the memory cell region by the metal pads directly.Type: GrantFiled: July 30, 2020Date of Patent: June 8, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventor: Hyun Jun Yoon
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Patent number: 11017841Abstract: A nonvolatile memory device includes a memory cell array that includes memory cells arranged in rows and columns, row decoder circuitry that is connected to the rows of the memory cells through word lines and controls voltages of the word lines, and page buffer circuitry that is connected to the columns of the memory cells through bit lines and includes first transistors configured to sense voltages of the bit lines and second transistors configured to invert and sense the voltages of the bit lines. The page buffer circuitry is configured to obtain first values by performing a first sensing operation on first bit lines of the bit lines through the first transistors and obtain second values by performing a second sensing operation on the second bit lines of the bit lines through the second transistors, wherein the first values or the second values are inverted.Type: GrantFiled: November 8, 2019Date of Patent: May 25, 2021Assignee: Samsung Electronics Co., Ltd.Inventor: Hyun Jun Yoon
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Patent number: 10910080Abstract: A nonvolatile memory device may include a page buffer including a plurality of latch sets that latch each page datum of selected memory cells among a plurality of memory cells according to each of read signal sets including at least one read signal, and a control logic configured to detect a degradation level of the memory cells and determine a read parameter applied to at least one of the read signal sets based on the detected degradation level.Type: GrantFiled: May 4, 2020Date of Patent: February 2, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Jin Bae Bang, Seung Hwan Song, Dae Seok Byeon, Il Han Park, Hyun Jun Yoon, Han Jun Lee, Na Young Choi
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Publication number: 20200357460Abstract: A nonvolatile memory device includes a memory cell region including first metal pads and a memory cell array, and a peripheral circuit region including second metal pads, row decoder circuitry that is connected to the rows of the memory cells through word lines and controls voltages of the word lines, and page buffer circuitry that is connected to the columns of the memory cells through bit lines. The page buffer circuitry is configured to obtain first values by performing a first sensing operation on first bit lines of the bit lines through the first transistors and obtain second values by performing a second sensing operation on the second bit lines of the bit lines through the second transistors, wherein the first values or the second values are inverted. The peripheral circuit region is vertically connected to the memory cell region by the metal pads directly.Type: ApplicationFiled: July 30, 2020Publication date: November 12, 2020Applicant: Samsung Electronics Co., Ltd.Inventor: Hyun Jun YOON
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Publication number: 20200286545Abstract: A nonvolatile memory device includes a memory cell array that includes memory cells arranged in rows and columns, row decoder circuitry that is connected to the rows of the memory cells through word lines and controls voltages of the word lines, and page buffer circuitry that is connected to the columns of the memory cells through bit lines and includes first transistors configured to sense voltages of the bit lines and second transistors configured to invert and sense the voltages of the bit lines. The page buffer circuitry is configured to obtain first values by performing a first sensing operation on first bit lines of the bit lines through the first transistors and obtain second values by performing a second sensing operation on the second bit lines of the bit lines through the second transistors, wherein the first values or the second values are inverted.Type: ApplicationFiled: November 8, 2019Publication date: September 10, 2020Applicant: Samsung Electronics Co., Ltd.Inventor: Hyun Jun YOON
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Publication number: 20200265908Abstract: A nonvolatile memory device may include a page buffer including a plurality of latch sets that latch each page datum of selected memory cells among a plurality of memory cells according to each of read signal sets including at least one read signal, and a control logic configured to detect a degradation level of the memory cells and determine a read parameter applied to at least one of the read signal sets based on the detected degradation level.Type: ApplicationFiled: May 4, 2020Publication date: August 20, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Jin Bae BANG, Seung Hwan SONG, Dae Seok BYEON, Il Han PARK, Hyun Jun YOON, Han Jun LEE, Na Young CHOI
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Patent number: 10665312Abstract: A nonvolatile memory device may include a page buffer including a plurality of latch sets that latch each page datum of selected memory cells among a plurality of memory cells according to each of read signal sets including at least one read signal, and a control logic configured to detect a degradation level of the memory cells and determine a read parameter applied to at least one of the read signal sets based on the detected degradation level.Type: GrantFiled: October 8, 2018Date of Patent: May 26, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Jin Bae Bang, Seung Hwan Song, Dae Seok Byeon, Il Han Park, Hyun Jun Yoon, Han Jun Lee, Na Young Choi
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Publication number: 20190287629Abstract: A nonvolatile memory device may include a page buffer including a plurality of latch sets that latch each page datum of selected memory cells among a plurality of memory cells according to each of read signal sets including at least one read signal, and a control logic configured to detect a degradation level of the memory cells and determine a read parameter applied to at least one of the read signal sets based on the detected degradation level.Type: ApplicationFiled: October 8, 2018Publication date: September 19, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Jin Bae BANG, Seung Hwan SONG, Dae Seok BYEON, II Han PARK, Hyun Jun YOON, Han Jun LEE, Na Young CHOI
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Patent number: 10210936Abstract: A nonvolatile memory device includes a memory cell array including a plurality of memory cells, an address decoder configured to be connected to the memory cells through a plurality of word lines and to provide select or unselect read voltages to the word lines, and a control logic configured to control the address decoder to perform a plurality of read sequences in a continuous read mode and to adjust a word line setup start point in at least one of the read sequences to be different than a word line setup start point in at least one of the other read sequences, wherein the word line setup start point is a time at which the select or unselect read voltages begin to be provided to the word lines.Type: GrantFiled: January 4, 2017Date of Patent: February 19, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyun Jun Yoon, Ji-Sang Lee
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Patent number: 10163518Abstract: Provided is a read method for a nonvolatile memory device for reading data with an optimum read voltage. The read method includes reading data of a first set of memory cells connected to a first word line, by dividing the data of the first set of memory cells into M pages and individually reading data from the M pages. The reading data includes performing an on-chip valley search (OVS) operation on a first valley of two adjacent threshold voltage distributions of the first set of memory cells when reading each of the M pages, and performing a data recover read operation via a read operation on a second word line adjacent to the first word line, based on a result of the OVS operation. In the data recover read operation, a read operation on the first word line is not performed.Type: GrantFiled: September 26, 2017Date of Patent: December 25, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyun-jun Yoon, Il-han Park, Na-young Choi, Seung-hwan Song
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Publication number: 20180204624Abstract: Provided is a read method for a nonvolatile memory device for reading data with an optimum read voltage. The read method includes reading data of a first set of memory cells connected to a first word line, by dividing the data of the first set of memory cells into M pages and individually reading data from the M pages. The reading data includes performing an on-chip valley search (OVS) operation on a first valley of two adjacent threshold voltage distributions of the first set of memory cells when reading each of the M pages, and performing a data recover read operation via a read operation on a second word line adjacent to the first word line, based on a result of the OVS operation. In the data recover read operation, a read operation on the first word line is not performed.Type: ApplicationFiled: September 26, 2017Publication date: July 19, 2018Inventors: Hyun-jun YOON, Il-han PARK, Na-young CHOI, Seung-hwan SONG
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Patent number: 10026473Abstract: A non-volatile memory device for selectively performing a recovery operation and a method of operating the same are provided. The method of operating a non-volatile memory device includes receiving a first read command, performing a first sensing operation in response to the first read command, and receiving a second read command. The method further includes completing a memory operation corresponding to the first read command without performing a recovery operation when the second read command is received before the first sensing operation is completed, and performing a second sensing operation in response to the second read command.Type: GrantFiled: October 7, 2016Date of Patent: July 17, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyun-Jun Yoon, Jae-Woo Im
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Patent number: 9947394Abstract: A nonvolatile memory device including a page buffer and a method of operating the nonvolatile memory device, the method including performing a first sensing operation using a first sensing voltage; precharging some bit lines from among a plurality of bit lines, according to first data stored in a first latch unit of a page buffer due to the first sensing operation; resetting the first latch unit; and performing a second sensing operation using a second sensing voltage.Type: GrantFiled: November 27, 2016Date of Patent: April 17, 2018Assignee: Samsung Electronic Co., Ltd.Inventor: Hyun-Jun Yoon