Abstract: A method of programming a nonvolatile memory device comprises applying at least one test program pulse to selected memory cells located in a scan read area, performing a scan read operation on the selected memory cells following application of the at least one test program pulse to detect at least one one-shot upper cell, calculating an offset voltage corresponding to a scan read region at which the scan read operation is performed, setting a program start bias using the offset voltage, and executing at least one program loop using the program start bias.

Abstract: A memory device includes a memory cell array and a page buffer unit. The memory cell array includes multiple memory cells. The page buffer unit performs a logic operation on data sequentially read from the memory cells at different voltage levels, based on the read data and a read direction of applying the different voltage levels.

Abstract: A method of programming a flash memory device comprises programming selected memory cells, performing a verification operation to determine whether the selected memory cells have reached a target program state, and determining a start point of the verification operation based on a programming characteristic associated with a detection of a pass bit during programming of an initial program state.

Abstract: A method of programming a non-volatile memory that includes dumping first page data loaded to a cache latch to a first data latch and backing up the first page data to a second data latch.

Abstract: A method of programming a flash memory device comprises programming selected memory cells, performing a verification operation to determine whether the selected memory cells have reached a target program state, and determining a start point of the verification operation based on a programming characteristic associated with a detection of a pass bit during programming of an initial program state.