Abstract: A nonvolatile memory device includes a semiconductor substrate of a first conductivity type; a gate insulating film formed on the substrate; a floating gate having a first region and a second region, the first region lying flat over the gate insulating film and the second region being extended from a first end portion of the first region and perpendicular to the first region; a control gate extending parallel to the second region of the floating gate, lying over the second end portion of the first region of the floating gate and perpendicular to the first region; an inter-insulating layer disposed between the floating gate and the control gate; a first spacer formed at a side wall of the second region of the floating gate and a second spacer formed at a side wall defined by the floating gate and the control gate; a high density source region of a second conductivity type formed in the substrate, being disposed a thickness of the first spacer distant from the floating gate; a first high density drain region of

Abstract: A thick oxide layer is formed over a drain region of an MOS transistor while a thin oxide layer is provided over the source and channel regions. As a result both improved current driving ability and reduced gate induced drain leakage current are achieved.