Patents by Inventor Hyung Dong Lee

Hyung Dong Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12144245
    Abstract: Provided are compound represented by Formula 1, an organic electric element including a first electrode, a second electrode, and an organic material layer formed between the first electrode and the second electrode, and electronic device thereof, and by including the compound represented by Formula 1 in the organic material layer, the driving voltage of the organic electric element can be lowered, and the luminous efficiency and life time of the organic electric element can be improved.
    Type: Grant
    Filed: June 23, 2021
    Date of Patent: November 12, 2024
    Assignee: DUK SAN NEOLUX CO., LTD.
    Inventors: Hyun Ji Oh, Soung Yun Mun, Sun Hee Lee, Hyung Dong Lee, Byoung Yeop Kang, Ui Sik Kwon
  • Patent number: 12116360
    Abstract: Provided are a compound represented by Formula (1) capable of improving the light-emitting efficiency, stability, and lifespan of an element; a composition comprising the same; an organic electronic element using same; and an electronic device thereof.
    Type: Grant
    Filed: December 29, 2023
    Date of Patent: October 15, 2024
    Assignee: DUK SAN NEOLUX CO., LTD.
    Inventors: Soo Yeon Kim, Hye Jeong Kim, Hyung Dong Lee, Jung Geun Lee
  • Publication number: 20240341105
    Abstract: A semiconductor device may include: a first access line extending in a first direction; a second access line extending in a second direction intersecting the first direction; and a memory cell connected between the first access line and the second access line and including an electrode including a dielectric barrier therein.
    Type: Application
    Filed: August 10, 2023
    Publication date: October 10, 2024
    Inventors: Yoon Mo Koo, Hyung Dong Lee
  • Publication number: 20240329846
    Abstract: A memory sprint controller, responsive to an indicator of an irregular memory access phase, causes a memory controller to enter a sprint mode in which it temporarily adjusts at least one timing parameter of a dynamic random access memory (DRAM) to reduce a time in which a designated number of activate (ACT) commands are allowed to be dispatched to the DRAM.
    Type: Application
    Filed: March 31, 2023
    Publication date: October 3, 2024
    Applicant: Advanced Micro Devices, Inc.
    Inventors: Vignesh Adhinarayanan, Michael Ignatowski, Hyung-Dong Lee
  • Publication number: 20240329847
    Abstract: A memory sprint controller, responsive to an indicator of an irregular memory access phase, causes a memory controller to enter a sprint mode in which it temporarily adjusts at least one timing parameter of a dynamic random access memory (DRAM) to reduce a time in which a designated number of activate (ACT) commands are allowed to be dispatched to the DRAM.
    Type: Application
    Filed: March 31, 2023
    Publication date: October 3, 2024
    Applicant: Advanced Micro Devices, Inc.
    Inventors: Vignesh Adhinarayanan, Michael Ignatowski, Hyung-Dong Lee
  • Patent number: 12086418
    Abstract: A memory sprint controller, responsive to an indicator of an irregular memory access phase, causes a memory controller to enter a sprint mode in which it temporarily adjusts at least one timing parameter of a dynamic random access memory (DRAM) to reduce a time in which a designated number of activate (ACT) commands are allowed to be dispatched to the DRAM.
    Type: Grant
    Filed: March 31, 2023
    Date of Patent: September 10, 2024
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Vignesh Adhinarayanan, Michael Ignatowski, Hyung-Dong Lee
  • Publication number: 20240217902
    Abstract: Provided are a fluorinated compound for patterning a metal or an electrode (cathode), an organic electronic element using the same, and an electronic device thereof, wherein by using the fluorinated compound as a material for patterning a metal or an electrode (cathode), it is possible to form a fine pattern of the electrode without using a shadow mask, since it is easy to manufacture a transparent display having high light transmittance, it is possible to more easily apply UDC.
    Type: Application
    Filed: June 24, 2022
    Publication date: July 4, 2024
    Applicants: DUK SAN NEOLUX CO., LTD., SAMSUNG DISPLAY CO., LTD.
    Inventors: Ki Won KIM, Kyung Hwan OH, Bu Yong YUN, Hyung Dong LEE, Jin Woo SHIN, Soung Yun MUN, Jae Duk YOO, Jung Geun LEE, Joon Gu LEE, Yeon Hwa LEE, Mi Kyung KIM, Ji Hyun SEO, Kwan Hee LEE
  • Publication number: 20240190852
    Abstract: Provided are a compound capable of improving the light-emitting efficiency, stability, and lifespan of an element; a composition comprising the same; an organic electronic element using same; and an electronic device thereof.
    Type: Application
    Filed: December 29, 2023
    Publication date: June 13, 2024
    Applicant: DUK SAN NEOLUX CO., LTD.
    Inventors: Soo Yeon KIM, Hye Jeong KIM, Hyung Dong LEE, Jung Geun LEE
  • Patent number: 11980045
    Abstract: Provided are an organic electronic element comprising an anode, a cathode, and an organic material layer between the anode and the cathode, and an electronic device comprising the organic electronic element, wherein the organic material layer comprises each compound represented by Formula 1, Formula 2, or Formula 3, thereby the driving voltage of the organic electronic element can be lowered and the luminous efficiency and lifespan can be improved.
    Type: Grant
    Filed: March 15, 2023
    Date of Patent: May 7, 2024
    Assignee: DUK SAN NEOLUX CO., LTD.
    Inventors: Hyo Min Jin, Bu Yong Yun, Jae Ho Kim, Hyung Dong Lee, Chi Hyun Park
  • Publication number: 20240138174
    Abstract: Provided are an organic electronic element comprising an anode, a cathode, and an organic material layer between the anode and the cathode, and an electronic device comprising the organic electronic element, wherein the organic material layer comprises each compound represented by Formula 1, Formula 2, or Formula 3, thereby the driving voltage of the organic electronic element can be lowered and the luminous efficiency and lifespan can be improved.
    Type: Application
    Filed: March 15, 2023
    Publication date: April 25, 2024
    Applicant: DUK SAN NEOLUX CO., LTD.
    Inventors: Hyo Min JIN, Bu Yong YUN, Jae Ho KIM, Hyung Dong LEE, Chi Hyun PARK
  • Patent number: 11963445
    Abstract: Provided are a compound capable of improving the light-emitting efficiency, stability, and lifespan of an element; an organic electronic element using same; and an electronic device thereof.
    Type: Grant
    Filed: August 9, 2023
    Date of Patent: April 16, 2024
    Assignee: DUK SAN NEOLUX CO., LTD.
    Inventors: Ji Hyun Park, Se Hoon Lee, Jae Wan Jang, Hyung Dong Lee, Yun Suk Lee
  • Publication number: 20240088098
    Abstract: Disclosed wherein stacked memory dies that utilize a mix of high and low operational temperature memory and non-volatile based memory dies, and chip packages containing the same. High temperature memory dies, such as those using non-volatile memory (NVM) technologies are in a memory stack with low temperature memory dies, such as those having volatile memory technologies. In some cases, the high temperature memory technologies could be used together, in some cases, on the same IC die as logic circuitry. In one example, a memory stack is provided that include a first memory IC die having high temperature memory circuitry, such as non-volatile memory, stacked below a second memory IC die. The second memory IC die has high temperature memory circuitry, such as volatile memory circuitry.
    Type: Application
    Filed: May 19, 2023
    Publication date: March 14, 2024
    Inventors: Divya Madapusi Srinivas PRASAD, Niti MADAN, Michael IGNATOWSKI, Hyung-Dong LEE
  • Publication number: 20240088099
    Abstract: Memory stacks having substantially vertical bitlines, and chip packages having the same, are disclosed herein. In one example, a memory stack is provided that includes a first memory IC die and a second memory IC die. The second memory IC die is stacked on the first memory IC die. Bitlines are routed through the first and second IC dies in a substantially vertical orientation. Wordlines within the first memory IC die are oriented orthogonal to the bitlines.
    Type: Application
    Filed: June 28, 2023
    Publication date: March 14, 2024
    Inventors: Divya Madapusi Srinivas PRASAD, Vignesh ADHINARAYANAN, Michael IGNATOWSKI, Hyung-Dong LEE
  • Patent number: 11930647
    Abstract: An electronic device includes a semiconductor memory including material layers each including one or more low-resistance areas and one or more high-resistance areas, insulating layers stacked alternately with the material layers and including protrusions extending more than the material layers, conductive pillars passing through the insulating layers and the low-resistance areas, conductive layers located between the protrusions, and variable resistance layers interposed between the low-resistance areas and the conductive layers.
    Type: Grant
    Filed: August 1, 2022
    Date of Patent: March 12, 2024
    Assignee: SK hynix Inc.
    Inventors: Si Jung Yoo, Tae Hoon Kim, Hyung Dong Lee
  • Publication number: 20240057476
    Abstract: Provided are a compound represented by Formula 1, an organic electric element comprising a first electrode, a second electrode, and an organic material layer formed between the first electrode and the second electrode, and an electronic device thereof, wherein by comprising compound represented by Formula 1 in the organic material layer, the driving voltage of the organic electric element can be lowered, and the luminous efficiency and life time, in particular, life time can be improved.
    Type: Application
    Filed: October 2, 2023
    Publication date: February 15, 2024
    Applicant: DUK SAN NEOLUX CO., LTD.
    Inventors: Ki Ho SO, Hyung Dong LEE, Dae Hwan OH, Won Sam KIM, Byoung Yeop KANG
  • Publication number: 20240049598
    Abstract: Provided are a compound capable of improving the light-emitting efficiency, stability, and lifespan of an element; an organic electronic element using same; and an electronic device thereof.
    Type: Application
    Filed: August 9, 2023
    Publication date: February 8, 2024
    Applicant: DUK SAN NEOLUX CO., LTD.
    Inventors: Ji Hyun PARK, Se Hoon LEE, Jae Wan JANG, Hyung Dong LEE, Yun Suk LEE
  • Patent number: 11877508
    Abstract: Provided are a fluorinated compound for patterning a metal or an electrode (cathode), an organic electronic element using the same, and an electronic device thereof, wherein a fine pattern of the electrode is formed by using the fluorinated compound as a material for patterning a metal or an electrode (cathode), without using a shadow mask, and it is possible to more easily apply UDC since it is easy to manufacture a transparent display having high light transmittance.
    Type: Grant
    Filed: February 15, 2023
    Date of Patent: January 16, 2024
    Assignees: DUK SAN NEOLUX CO., LTD., SAMSUNG DISPLAY CO., LTD.
    Inventors: Ki Won Kim, Kyung Hwan Oh, Bu Yong Yun, Hyung Dong Lee, Jin Woo Shin, Soung Yun Mun, Jae Duk Yoo, Jung Geun Lee, Joon Gu Lee, Yeon Hwa Lee, Mi Kyung Kim, Ji Hyun Seo, Kwan Hee Lee
  • Patent number: 11871587
    Abstract: A memory device includes first to nth decks respectively coupled to first to nth row lines which are stacked over a substrate in a vertical direction perpendicular to a surface of the substrate, n being a positive integer, a first connection structure extending from the substrate in the vertical direction to be coupled to the first row line, even-numbered connection structures extending from the substrate in the vertical direction and respectively coupled to ends of even-numbered row lines among the second to nth row lines, and odd-numbered connection structures extending from the substrate in the vertical direction and respectively coupled to ends of odd-numbered row lines among the second to nth row lines. The even-numbered connection structures are spaced apart from the odd-numbered connection structures with the first row line and the first connection structure that are interposed between the even-numbered connection structures and the odd-numbered connection structures.
    Type: Grant
    Filed: November 9, 2022
    Date of Patent: January 9, 2024
    Assignee: SK hynix Inc.
    Inventor: Hyung Dong Lee
  • Publication number: 20240008304
    Abstract: Embodiments of the present invention relate to a semiconductor-nanoparticle-ligand complex, a preparation method therefor, a photosensitive resin composition, an optical film, an electroluminescent diode and an electronic device, and, more specifically, can provide: a semiconductor-nanoparticle-ligand complex comprising a ligand represented by chemical formula 1, and thus has excellent compatibility; an optical film with excellent efficiency; an electroluminescent diode; and an electronic device.
    Type: Application
    Filed: November 18, 2021
    Publication date: January 4, 2024
    Inventors: See Maek LEE, Yum Hee PARK, Eun Byul BANG, Do Eon KIM, Tae Yun KIM, Jong Moon SHIN, Chang Min LEE, Hyung Dong LEE, Hyun Ji OH
  • Patent number: 11856841
    Abstract: Provided are a fluorinated compound for patterning a metal or an electrode (cathode), an organic electronic element using the same, and an electronic device thereof, wherein a fine pattern of the electrode is formed by using the fluorinated compound as a material for patterning a metal or an electrode (cathode), without using a shadow mask, and it is possible to more easily apply UDC since it is easy to manufacture a transparent display having high light transmittance.
    Type: Grant
    Filed: February 15, 2023
    Date of Patent: December 26, 2023
    Assignees: DUK SAN NEOLUX CO., LTD., SAMSUNG DISPLAY CO., LTD.
    Inventors: Ki Won Kim, Kyung Hwan Oh, Bu Yong Yun, Hyung Dong Lee, Jin Woo Shin, Soung Yun Mun, Jae Duk Yoo, Jung Geun Lee, Joon Gu Lee, Yeon Hwa Lee, Mi Kyung Kim, Ji Hyun Seo, Kwan Hee Lee