Abstract: Provided are a compound capable of improving the luminous efficiency, stability and lifespan of a device employing the same, an organic electronic element using the same, and an electronic device thereof.

Abstract: Provided are an organic electronic element including an anode, a cathode, and an organic material layer between the anode and the cathode, and an electronic device including the organic electronic element, wherein the organic material layer includes each of the compounds represented by Formulas 1 and 2 and the driving voltage of the organic electronic element is lowered, and the luminous efficiency and lifetime of the element are improved.

Abstract: The present invention provides a novel compound capable of improving the luminous efficiency, stability and lifespan of a device, an organic electronic element using the same, and an electronic device thereof.

Abstract: An organic electric element according to an embodiment of the present disclosure includes a first electrode, a second electrode, and an organic material layer formed between the first electrode and the second electrode. The organic material layer includes compounds represented by Formula 1 and Formula 2 of the present invention, thereby the driving voltage the organic electric element can be lowered, and the luminous efficiency and the life time of the organic electric element can be improved.

Abstract: A memory device includes first to nth decks respectively coupled to first to nth row lines which are stacked over a substrate in a vertical direction perpendicular to a surface of the substrate, n being a positive integer, a first connection structure extending from the substrate in the vertical direction to be coupled to the first row line, even-numbered connection structures extending from the substrate in the vertical direction and respectively coupled to ends of even-numbered row lines among the second to nth row lines, and odd-numbered connection structures extending from the substrate in the vertical direction and respectively coupled to ends of odd-numbered row lines among the second to nth row lines. The even-numbered connection structures are spaced apart from the odd-numbered connection structures with the first row line and the first connection structure that are interposed between the even-numbered connection structures and the odd-numbered connection structures.

Abstract: Provided are an organic electronic element and an electronic device thereof, the organic electronic element being capable of achieving high light-emitting efficiency and a low driving voltage, and can also greatly improve the lifespan of the element by using a compound of the present invention as a phosphorescent host material.

Abstract: Provided are a compound capable of improving the luminous efficiency, stability and lifespan of a device employing the same, an organic electronic element employing the same, and an electronic device thereof.

Abstract: A memory device includes first to nth decks respectively coupled to first to nth row lines which are stacked over a substrate in a vertical direction perpendicular to a surface of the substrate, n being a positive integer, a first connection structure extending from the substrate in the vertical direction to be coupled to the first row line, even-numbered connection structures extending from the substrate in the vertical direction and respectively coupled to ends of even-numbered row lines among the second to nth row lines, and odd-numbered connection structures extending from the substrate in the vertical direction and respectively coupled to ends of odd-numbered row lines among the second to nth row lines. The even-numbered connection structures are spaced apart from the odd-numbered connection structures with the first row line and the first connection structure that are interposed between the even-numbered connection structures and the odd-numbered connection structures.

Abstract: An electronic device includes a semiconductor memory including material layers each including one or more low-resistance areas and one or more high-resistance areas, insulating layers stacked alternately with the material layers and including protrusions extending more than the material layers, conductive pillars passing through the insulating layers and the low-resistance areas, conductive layers located between the protrusions, and variable resistance layers interposed between the low-resistance areas and the conductive layers.

Abstract: Provided are a compound capable of improving the luminous efficiency, stability and lifespan of a device employing the same, an organic electronic element employing the same, and an electronic device thereof.

Abstract: A variable resistive memory device includes a memory cell, a first circuit, and a second circuit. The memory cell is connected between a word line and a bit line. The first circuit provides the bit line with a first pulse voltage based on at least one enable signal. The second circuit provides the word line with a second pulse voltage based on the enable signal. The first circuit generates the first pulse voltage increased in steps from an initial voltage level to a target voltage level.

Abstract: Provided are a compound represented by Formula 1 or Formula A, an organic electric element comprising a first electrode, a second electrode, and an organic material layer formed between the first electrode and the second electrode and an electronic device thereof, wherein the compound represented by Formula 1 or Formula A is included in the organic material layer, and thereby the driving voltage of the organic electronic device can be lowered, and the luminous efficiency and life time of the organic electronic device can be improved.

Abstract: A synapse array of a neuromorphic device is provided. The synapse array may include a pre-synaptic neuron; a row line extending from the pre-synaptic neuron in a row direction; a post synaptic neuron; a column line extending from the post-synaptic neuron in a column direction; and a synapse disposed at an intersection region between the row line and the column line. The synapse may include an n-type ferroelectric field effect transistor (n-FeFET) having a source electrode, a gate electrode and a body; a p-type ferroelectric field effect transistor (p-FeFET) having a source electrode, a gate electrode and a body; and a resistive element having a first node electrically connected to the source electrode of the n-FeFET and electrically connected to the source electrode of the p-FeFET, and the n-FeFET and the p-FeFET are electrically connected in series.

Abstract: An electronic device includes a semiconductor memory including material layers each including one or more low-resistance areas and one or more high-resistance areas, insulating layers stacked alternately with the material layers and including protrusions extending more than the material layers, conductive pillars passing through the insulating layers and the low-resistance areas, conductive layers located between the protrusions, and variable resistance layers interposed between the low-resistance areas and the conductive layers.

Abstract: Provided herein are an organic electronic compound capable of improving luminous efficiency, stability and lifespan of an electronic device, an organic electronic element employing the same, and an electronic device thereof.

Abstract: Provided are a compound represented by Formula 24, an organic electric element comprising a first electrode, a second electrode, and an organic material layer formed between the first electrode and the second electrode and comprising the compound of Formula 24, and an electronic device thereof, the element and device having improved driving voltage, luminous efficiency and life time from the employment of the compound.

Abstract: Provided are a quantum dot, a method of manufacturing the quantum dot, and an electronic device including the quantum dot. The quantum dot includes a core including a first semiconductor nanocrystal and a doping metal. The first semiconductor nanocrystal includes a group II element, a group III element, and a group V element. The quantum dot has a narrower full width at half maximum (FWHM) and superior quantum efficiency, and manufactured in a simple manner.

Abstract: Provided are an organic electric element including an anode, a cathode, and an organic material layer formed between the anode and the cathode, and electronic device thereof, and by including the compounds of Formulas 1 and 2 in the organic material layer, the driving voltage of the organic electric element can be lowered, and the luminous efficiency and life time of the organic electric element can be improved.

Abstract: A synapse system of a neuromorphic device may include a pre-synaptic neuron; a pre-synaptic line extending from the pre-synaptic neuron in a first direction; a post-synaptic neuron; a post-synaptic line extending from the post-synaptic line in a second direction; a selecting controller; a selecting line extending from the selecting controller in a third direction; and a synapse electrically connected with the pre-synaptic line, the post-synaptic line, and the selecting line.

Abstract: Provides are a compound capable of improving the luminous efficiency, stability and lifespan of a device, an organic electronic element employing the same, and an electronic device thereof.