Abstract: Provided are a washing machine motor including: an outer shaft connected to a washing tub; an inner shaft rotatably disposed inside the outer shaft and connected to a pulsator; an inner rotor connected to the outer shaft; an outer rotor connected to the inner shaft; a stator disposed between the inner rotor and the outer rotor with an air gap; and a planetary gear set mounted on the inner shaft so as to reduce a rotational speed. The washing machine motor includes the planetary gear set which increases a torque by reducing a rotational speed in the inner shaft connected to the pulsator to thereby allow implementation of a large-capacity washing machine.

Abstract: A double stator includes: a stator core; a bobbin wrapped on an outer circumferential surface of the stator core; and a first coil wound on one side of the stator core and a second coil wound on the other side of the stator core. The stator core comprises: a lamination type core portion formed by laminating a plurality of iron pieces, on an outer surface of which a first press-fit groove is formed, and on an inner surface of which a second press-fit groove is formed; a first integration type core portion fixed to the first press-fit groove of the lamination type core portion, integrally formed by metal powders, and on which a first coil is wound; and a second integration type core portion fixed to the second press-fit groove of the lamination type core portion, integrally formed by metal powders, and on which a second coil is wound.

Abstract: A motor driving apparatus for a washing machine, in which a motor is a washing machine motor with a double stator and a double rotor respectively having first and second U-phase, V-phase, and W-phase stator coils, includes: a motor controller for generating a drive signal in accordance with a washing mode, a rinsing mode and a dewatering mode; an inverter for generating a three-phase alternating-current (AC) power, in which any one-phase AC power of the three-phase AC power is applied in common to any one-phase stator coil of the first and second U-phase, V-phase, and W-phase stator coils for the washing machine motor; and a switching unit for switching to apply the remaining two-phase AC power of the three-phase AC power to any two-phase stator coils of the remaining two-phase stator coils of the first and second U-phase, V-phase, and W-phase stator coils for the washing machine motor.

Abstract: Provided are a stator having a three-coil wiring structure, a BLDC motor using the same, and a driving method thereof, in which coils are wound by using a three-coil wiring method, to thus minimize a ratio between slots and poles, and to thereby reduce cogging noise, and a gap between cores is set small, to thus increase an effective area between a magnet and a core and to thereby reduce leakage magnetic flux. The BLDC motor includes: a stator having a plurality of split cores that are disposed between an inner rotor and an outer rotor, and on which coils of three phases are connected and wound in a three-phase drive method, in which the plurality of split cores include a number of core groups in which the coils of the respective phases are wound on three consecutive split cores in sequence of a forward direction, a reverse direction, and a forward direction, and the three consecutive split cores generate magnetic flux in opposite directions to each other.

Abstract: A system comprises an end-user device including a browser and a security component capable of executing a security policy, the security policy to be downloaded from a website; and a website including a security policy downloadable to the security component.

Abstract: A single rotor type motor includes: a stator including a plurality of stator cores that are divided in a plural number and radially arranged, a bobbin made of an insulating material and wrapped on an outer surface of each of the stator cores, and coils wound on an outer surface of the bobbin; and a single rotor disposed with a certain gap from any one surface of an inner surface of the stator and an outer surface thereof, wherein a wiring unit for electrically wiring coils wound on each stator core is integrally formed with the bobbin, and the wiring unit is arranged at an opposing end to an end facing the rotor of the stator core.

Abstract: A single rotor type motor includes: a stator including a plurality of stator cores that are split and radially arranged, a bobbin made of an insulating material and wrapped on an outer surface of each of the stator cores, coils wound on an outer surface of the bobbin, an upper fixing plate disposed on the upper surfaces of the stator cores and on which the stator cores are radially arranged, and a lower fixing plate that is disposed on the lower surfaces of the stator cores and is coupled with the upper fixing plate; and a single rotor disposed with a certain gap from any one surface of an inner surface of the stator and an outer surface thereof The plurality of wiring units for electrically connecting between the coils wound around each of the stator cores are formed integrally on the upper surface of the upper fixing plate.

Abstract: A method for forming a silicon oxide film of a semiconductor device is disclosed. The method of forming the silicon oxide film of the semiconductor device includes performing surface processing using an amine-based compound, so that the uniformity and density of the silicon oxide film may be improved.

Abstract: A semiconductor device with an isolation layer buried in a trench includes an interface layer formed on the surface of the trench, a buffer layer formed in the interface layer at a bottom corner of the trench, a liner layer formed over the interface layer, and a gap-fill layer gap-filling the trench over the liner layer. The trench includes a micro-trench formed at the bottom corner thereof, and the buffer layer fills the micro-trench.

Abstract: A semiconductor device includes a plurality of first conductive patterns separated by a damascene pattern, a second conductive pattern buried in the damascene pattern, and a spacer including an air gap between the second conductive pattern and the first conductive patterns.

Abstract: A semiconductor device with an isolation layer buried in a trench includes an interface layer formed on the surface of the trench, a buffer layer formed in the interface layer at a bottom corner of the trench, a liner layer formed over the interface layer, and a gap-fill layer gap-filling the trench over the liner layer. The trench includes a micro-trench formed at the bottom corner thereof, and the buffer layer fills the micro-trench.

Abstract: The present invention relates to a pharmaceutical composition for the prevention and treatment of blood-brain barrier disorder comprising fluoxetine as an active ingredient. More particularly, fluoxetine inhibits the expressions of matrix metalloproteinase(MMP)-2, MMP-9, and MMP-12, which are reported to be related to blood-brain barrier (BBB) disruption and inflammatory reaction after spinal cord injury, specifically inhibits the activations of MMP-2 and MMP-9, inhibits the decomposition of ZO-1, the most representative tight junction protein, so as to maintain tight junction between endothelial cells and to protect blood-brain barrier thereby, inhibits the increase of blood-brain barrier permeability, and inhibits the expressions of chemoattractants of blood cells, such as CXCL-1, CXCL-2, CCL-2, CCL-3 and CCL-4 so as to reduce inflow of blood into spinal cord and recover exercise function which has been deteriorated by spinal cord injury.

Abstract: An isolation layer of a semiconductor device and a process for forming the same is described herein. The isolation layer includes a trench that is defined and formed in a semiconductor substrate. A first liner nitride layer is formed on the surface of the trench and a flowable insulation layer is formed in the trench including the first liner nitride layer. The flowable insulation layer is formed such to define a recess in the trench. A second liner nitride layer is formed on the recess including the flowable insulation layer and the first liner nitride layer. Finally, an insulation layer is formed in the recess on the second liner nitride layer to completely fill the trench.

Abstract: A semiconductor device includes a plurality of first conductive patterns separated by a damascene pattern, a second conductive pattern buried in the damascene pattern, and a spacer including an air gap between the second conductive pattern and the first conductive patterns.

Abstract: A semiconductor device with an isolation layer buried in a trench includes an interface layer formed on the surface of the trench, a buffer layer formed in the interface layer at a bottom corner of the trench, a liner layer formed over the interface layer, and a gap-fill layer gap-filling the trench over the liner layer. The trench includes a micro-trench formed at the bottom corner thereof, and the buffer layer fills the micro-trench.

Abstract: A surface treatment method for a semiconductor device includes providing a substrate where a plurality of projected patterns are formed, forming a hydrophobic coating layer on a surface of each of the plurality of projected patterns, rinsing the substrate with deionized water, and drying the substrate, wherein the hydrophobic coating layer is formed using a coating agent that includes phosphate having more than one hydrocarbon group, phosphonate having more than one hydrocarbon group, or a mixture thereof.

Abstract: A semiconductor device includes a plurality of first conductive patterns separated by a damascene pattern, a second conductive pattern buried in the damascene pattern, and a spacer including an air gap between the second conductive pattern and the first conductive patterns.

Abstract: A method for forming a silicon oxide film of a semiconductor device is disclosed. The method of forming the silicon oxide film of the semiconductor device includes performing surface processing using an amine-based compound, so that the uniformity and density of the silicon oxide film may be improved.

Abstract: Disclosed are a thin film solar cell and a method of manufacturing the thin film solar cell. The thin film solar cell according to an exemplary embodiment of the present invention thin film solar cell includes a substrate: a front electrode layer formed on the substrate; an oxide layer formed on the front electrode layer: a light absorbing layer (intrinsic layer) formed on the oxide layer; and a back electrode layer formed on the light absorbing layer, wherein the oxide layer is formed of a material selected from MoO2, WO2, V2O5, NiO and CrO3.

Abstract: Disclosed are a thin film solar cell and a method of manufacturing the thin film solar cell. The thin film solar cell according to an exemplary embodiment of the present invention thin film solar cell includes a substrate: a front electrode layer formed on the substrate; an oxide layer formed on the front electrode layer: a light absorbing layer (intrinsic layer) formed on the oxide layer; and a back electrode layer formed on the light absorbing layer, wherein the oxide layer is formed of a material selected from MoO3, WO3, V2O5, NiO and CrO3.