Patents by Inventor Hyung-jae Shin

Hyung-jae Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10105060
    Abstract: A breast scanning apparatus which uses photoacoustic ultrasonic waves is provided. The breast scanning apparatus includes a body which includes a first hole and a second hole which are horizontally parallel to each other; a first compression plate and a second compression plate, at least one of which is movable in a vertical direction with respect to the body; a first sliding plate and a second sliding plate, which are respectively installed on surfaces of the first compression plate and the second compression plate and are facing each other and are movable in a first direction; a first ultrasonic transducer array in the first compression plate and facing the first sliding plate; and a first laser head in the first compression plate, which is movable in a second direction which is perpendicular to the first direction.
    Type: Grant
    Filed: July 23, 2014
    Date of Patent: October 23, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong-seok Kim, Sung-chan Kang, Hyung-joo Kim, Hyung-jae Shin, Yong-seop Yoon, Byung-gil Jeong, Seok-whan Chung, Chang-jung Kim
  • Patent number: 9770740
    Abstract: An ultrasonic transducer and ultrasonic diagnostic apparatus are provided. An ultrasonic transducer includes a substrate including a trench formed in a lower surface of the substrate; and a first element and a second element formed on an upper surface of the substrate and are located adjacent to each other, wherein the trench is positioned between the first element and the second element, wherein the first element and the second element each include a plurality of ultrasonic cells that are two-dimensionally arranged; wherein a first contour line of the first element and a second contour line of the second element, which are adjacent to each other, each form a zig-zag line which are complementary with each other, and the trench is formed in a zig-zag pattern between the first contour line and the second contour line.
    Type: Grant
    Filed: May 13, 2014
    Date of Patent: September 26, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyung-jae Shin, Sang-ha Park
  • Patent number: 9319800
    Abstract: An electro-acoustic transducer includes a conductive substrate provided with at least one cell and at least one electrode, and a pad substrate disposed corresponding to the conductive substrate and provided with at least one pad corresponding to the electrode, in which at least one of the electrode and the pad includes an electric pattern for electric connection and at least one dummy pattern that is provided around the electric pattern to be separated the electric pattern.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: April 19, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seog-woo Hong, Hyung-jae Shin, Dong-sik Shim, Byung-gil Jeong, Seok-whan Chung
  • Patent number: 9120127
    Abstract: An ultrasonic transducer structure, an ultrasonic transducer, and a method of manufacturing the ultrasonic transducer are provided. The ultrasonic transducer structure includes a driving wafer that includes a driving circuit; and an ultrasonic transducer wafer that is disposed on the driving wafer and includes a first wafer in which a via-hole is formed, a first insulating layer formed on the first wafer, a second wafer spaced apart from the first insulating layer, and a cavity formed between the first insulating layer and the second wafer.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: September 1, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Byung-gil Jeong, Seog-woo Hong, Dong-kyun Kim, Seok-whan Chung, Hyung-jae Shin
  • Publication number: 20150230029
    Abstract: An electro-acoustic transducer includes a conductive substrate provided with at least one cell and at least one electrode, and a pad substrate disposed corresponding to the conductive substrate and provided with at least one pad corresponding to the electrode, in which at least one of the electrode and the pad includes an electric pattern for electric connection and at least one dummy pattern that is provided around the electric pattern to be separated the electric pattern.
    Type: Application
    Filed: June 27, 2014
    Publication date: August 13, 2015
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seog-woo HONG, Hyung-jae SHIN, Dong-sik SHIM, Byung-gil JEONG, Seok-whan CHUNG
  • Publication number: 20150141795
    Abstract: A breast scanning apparatus which uses photoacoustic ultrasonic waves is provided. The breast scanning apparatus includes a body which includes a first hole and a second hole which are horizontally parallel to each other; a first compression plate and a second compression plate, at least one of which is movable in a vertical direction with respect to the body; a first sliding plate and a second sliding plate, which are respectively installed on surfaces of the first compression plate and the second compression plate and are facing each other and are movable in a first direction; a first ultrasonic transducer array in the first compression plate and facing the first sliding plate; and a first laser head in the first compression plate, which is movable in a second direction which is perpendicular to the first direction.
    Type: Application
    Filed: July 23, 2014
    Publication date: May 21, 2015
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jong-seok KIM, Sung-chan KANG, Hyung-joo KIM, Hyung-jae SHIN, Yong-seop YOON, Byung-gil JEONG, Seok-whan CHUNG, Chang-jung KIM
  • Publication number: 20150107362
    Abstract: An ultrasonic transducer and ultrasonic diagnostic apparatus are provided. An ultrasonic transducer includes a substrate including a trench formed in a lower surface of the substrate; and a first element and a second element formed on an upper surface of the substrate and are located adjacent to each other, wherein the trench is positioned between the first element and the second element, wherein the first element and the second element each include a plurality of ultrasonic cells that are two-dimensionally arranged; wherein a first contour line of the first element and a second contour line of the second element, which are adjacent to each other, each form a zig-zag line which are complementary with each other, and the trench is formed in a zig-zag pattern between the first contour line and the second contour line.
    Type: Application
    Filed: May 13, 2014
    Publication date: April 23, 2015
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyung-jae SHIN, Sang-ha PARK
  • Patent number: 8727994
    Abstract: A cell of an ultrasonic transducer is provided. The cell includes a substrate; a supporting portion disposed on the substrate; a thin film spaced apart from the substrate and the supporting portion; and a connection portion which connects the supporting portion and the thin film. The connection portion may include a deformation portion that is elastically deformable. A channel of the ultrasonic transducer includes a plurality of cells arranged in an array. The ultrasonic transducer includes a plurality of channels arranged in an array.
    Type: Grant
    Filed: June 24, 2011
    Date of Patent: May 20, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-kyun Kim, Hyung-jae Shin, Seok-whan Chung, Byung-gil Jeong
  • Publication number: 20130169110
    Abstract: An ultrasonic transducer structure, an ultrasonic transducer, and a method of manufacturing the ultrasonic transducer are provided. The ultrasonic transducer structure includes a driving wafer that includes a driving circuit; and an ultrasonic transducer wafer that is disposed on the driving wafer and includes a first wafer in which a via-hole is formed, a first insulating layer formed on the first wafer, a second wafer spaced apart from the first insulating layer, and a cavity formed between the first insulating layer and the second wafer.
    Type: Application
    Filed: September 14, 2012
    Publication date: July 4, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Byung-gil JEONG, Seog-woo HONG, Dong-kyun KIM, Seok-whan CHUNG, Hyung-jae SHIN
  • Publication number: 20130026655
    Abstract: A chip package structure includes a substrate in which a plurality of grooves are formed, an adhesive layer disposed on the substrate, and a plurality of chips attached to the adhesive layer. In addition, a method of fabricating the chip package structure includes forming a plurality of grooves in the substrate, dispensing a die attach material on a plurality of chip attaching regions between the plurality of grooves, and attaching a plurality of chips respectively on the plurality of chip attaching regions.
    Type: Application
    Filed: April 3, 2012
    Publication date: January 31, 2013
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Baik-woo LEE, Hyung-jae Shin
  • Patent number: 8275155
    Abstract: A method for fabricating a micro speaker is provided, including forming a package wafer and a device wafer by batch processing, bonding the package wafer and the device wafer to each other, and forming a diaphragm by isotropic-etching a back surface of the device wafer using a xenon difluoride (XeF2). As a result, a micro-electronic-mechanic system (MEMS) technology-based piezoelectric micro speaker having a wide frequency response range is realized, by batch processing, thereby providing simplified structure and processing and reducing fabricating cost.
    Type: Grant
    Filed: August 6, 2008
    Date of Patent: September 25, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byung-gil Jeong, Hyung-jae Shin, Seok-whan Chung, Dong-kyun Kim
  • Publication number: 20120150041
    Abstract: A cell of an ultrasonic transducer is provided. The cell includes a substrate; a supporting portion disposed on the substrate; a thin film spaced apart from the substrate and the supporting portion; and a connection portion which connects the supporting portion and the thin film. The connection portion may include a deformation portion that is elastically deformable. A channel of the ultrasonic transducer includes a plurality of cells arranged in an array. The ultrasonic transducer includes a plurality of channels arranged in an array.
    Type: Application
    Filed: June 24, 2011
    Publication date: June 14, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong-kyun KIM, Hyung-jae SHIN, Seok-whan CHUNG, Byung-gil JEONG
  • Patent number: 8184356
    Abstract: A micro thin-film structure, a micro electro-mechanical system (MEMS) switch, and methods of fabricating them. The micro thin-film structure includes at least two thin-films having different properties and laminated in sequence to form an upper layer and a lower layer, wherein an interface between the upper and lower layers is formed to be oriented to at least two directions. The micro thin film structure, and method of forming, may be applied to a movable electrode of an MEMS switch. The thin-film structure may be formed by forming through-holes in the lower layer, and depositing the upper layer in the form of being engaged in the through-holes. Alternatively, the thin-film structure may be made by forming prominence and depression parts on the top side of the lower layer and then depositing the upper layer on the top side of the lower layer having the prominence and depression parts.
    Type: Grant
    Filed: May 18, 2010
    Date of Patent: May 22, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Soon-cheol Kweon, Hyung-jae Shin, Byung-hee Jeon, Seok-kwan Hong, Che-heung Kim, Sang-hun Lee
  • Patent number: 7911300
    Abstract: A MEMS RF-switch is provided for controlling switching on/off of transmission of AC signals. The MEMS RF-switch of the present invention includes: a first electrode coupled to one terminal of the power source; a semiconductor layer combined with an upper surface of the first electrode, and forming a potential barrier to become insulated when a bias signal is applied from the power source; and a second electrode disposed at a predetermined distance away from the semiconductor layer, and being coupled to the other terminal of the power source, wherein the second electrode contacts the semiconductor layer when a bias signal is applied from the power source. Therefore, although the bias signal may not be cut off, free electrons and holes are recombined in the semiconductor layer, whereby charge buildup and sticking can be prevented.
    Type: Grant
    Filed: February 1, 2010
    Date of Patent: March 22, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Il-jong Song, Dong-ha Shim, Hyung-jae Shin, Soon-cheol Kweon, Che-heung Kim, Sang-hun Lee, Young-tack Hong
  • Publication number: 20100225990
    Abstract: A micro thin-film structure, a micro electro-mechanical system (MEMS) switch, and methods of fabricating them. The micro thin-film structure includes at least two thin-films having different properties and laminated in sequence to form an upper layer and a lower layer, wherein an interface between the upper and lower layers is formed to be oriented to at least two directions. The micro thin film structure, and method of forming, may be applied to a movable electrode of an MEMS switch. The thin-film structure may be formed by forming through-holes in the lower layer, and depositing the upper layer in the form of being engaged in the through-holes. Alternatively, the thin-film structure may be made by forming prominence and depression parts on the top side of the lower layer and then depositing the upper layer on the top side of the lower layer having the prominence and depression parts.
    Type: Application
    Filed: May 18, 2010
    Publication date: September 9, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Soon-cheol Kweon, Hyung-jae Shin, Byung-hee Jeon, Seok-kwan Hong, Che-heung Kim, Sang-hun Lee
  • Publication number: 20100225991
    Abstract: A micro thin-film structure, a micro electro-mechanical system (MEMS) switch, and methods of fabricating them. The micro thin-film structure includes at least two thin-films having different properties and laminated in sequence to form an upper layer and a lower layer, wherein an interface between the upper and lower layers is formed to be oriented to at least two directions. The micro thin film structure, and method of forming, may be applied to a movable electrode of an MEMS switch. The thin-film structure may be formed by forming through-holes in the lower layer, and depositing the upper layer in the form of being engaged in the through-holes. Alternatively, the thin-film structure may be made by forming prominence and depression parts on the top side of the lower layer and then depositing the upper layer on the top side of the lower layer having the prominence and depression parts.
    Type: Application
    Filed: May 18, 2010
    Publication date: September 9, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Soon-cheol Kweon, Hyung-jae Shin, Byung-hee Jeon, Seok-kwan Hong, Che-heung Kim, Sang-hun Lee
  • Patent number: 7746536
    Abstract: A micro thin-film structure, a micro electro-mechanical system (MEMS) switch, and methods of fabricating them. The micro thin-film structure includes at least two thin-films having different properties and laminated in sequence to form an upper layer and a lower layer, wherein an interface between the upper and lower layers is formed to be oriented to at least two directions. The micro thin film structure, and method of forming, may be applied to a movable electrode of an MEMS switch. The thin-film structure may be formed by forming through-holes in the lower layer, and depositing the upper layer in the form of being engaged in the through-holes. Alternatively, the thin-film structure may be made by forming prominence and depression parts on the top side of the lower layer and then depositing the upper layer on the top side of the lower layer having the prominence and depression parts.
    Type: Grant
    Filed: September 21, 2005
    Date of Patent: June 29, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Soon-cheol Kweon, Hyung-jae Shin, Byung-hee Jeon, Seok-kwan Hong, Che-heung Kim, Sang-hun Lee
  • Publication number: 20100133077
    Abstract: A MEMS RF-switch is provided for controlling switching on/off of transmission of AC signals. The MEMS RF-switch of the present invention includes: a first electrode coupled to one terminal of the power source; a semiconductor layer combined with an upper surface of the first electrode, and forming a potential barrier to become insulated when a bias signal is applied from the power source; and a second electrode disposed at a predetermined distance away from the semiconductor layer, and being coupled to the other terminal of the power source, wherein the second electrode contacts the semiconductor layer when a bias signal is applied from the power source. Therefore, although the bias signal may not be cut off, free electrons and holes are recombined in the semiconductor layer, whereby charge buildup and sticking can be prevented.
    Type: Application
    Filed: February 1, 2010
    Publication date: June 3, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Il-jong Song, Dong-ha Shim, Hyung-jae Shin, Soon-cheol Kweon, Che-heung Kim, Sang-hun Lee, Young-tack Hong
  • Patent number: 7683747
    Abstract: A MEMS RF-switch is provided for controlling switching on/off of transmission of AC signals. The MEMS RF-switch of the present invention includes: a first electrode coupled to one terminal of the power source; a semiconductor layer combined with an upper surface of the first electrode, and forming a potential barrier to become insulated when a bias signal is applied from the power source; and a second electrode disposed at a predetermined distance away from the semiconductor layer, and being coupled to the other terminal of the power source, wherein the second electrode contacts the semiconductor layer when a bias signal is applied from the power source. Therefore, although the bias signal may not be cut off, free electrons and holes are recombined in the semiconductor layer, whereby charge buildup and sticking can be prevented.
    Type: Grant
    Filed: July 13, 2005
    Date of Patent: March 23, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Il-jong Song, Dong-ha Shim, Hyung-jae Shin, Soon-cheol Kweon, Che-heung Kim, Sang-hun Lee, Young-tack Hong
  • Patent number: RE50076
    Abstract: The present invention relates to a liquefied gas carrier having a width of less than 32.3 m to pass through the old Panama Canal, which includes a liquefied gas tank having a liquefied gas storage capacity of 70K or more, preferably 78.7K.
    Type: Grant
    Filed: April 12, 2021
    Date of Patent: August 13, 2024
    Assignee: HYUNDAI HEAVY INDUSTRIES CO., LTD.
    Inventors: Min Seok Oh, Min Jae Kwon, Jong Pil Ha, Hyuk Jang Kwon, Kang Su Nam, Hyung Cheol Shin