Abstract: A service identifying and processing method using a wireless terminal message according to an exemplary embodiment of the present invention includes (a) receiving a wireless terminal message by a first entity which is a mobile device; and (b) expressing, by a first agent which is an information processing application program installed on the first entity, entity information of second entity based on the wireless terminal message and service confirmation information related to service provided by the second entity, through an application screen by the first agent.

Abstract: A breast scanning apparatus which uses photoacoustic ultrasonic waves is provided. The breast scanning apparatus includes a body which includes a first hole and a second hole which are horizontally parallel to each other; a first compression plate and a second compression plate, at least one of which is movable in a vertical direction with respect to the body; a first sliding plate and a second sliding plate, which are respectively installed on surfaces of the first compression plate and the second compression plate and are facing each other and are movable in a first direction; a first ultrasonic transducer array in the first compression plate and facing the first sliding plate; and a first laser head in the first compression plate, which is movable in a second direction which is perpendicular to the first direction.

Abstract: An ultrasonic transducer and ultrasonic diagnostic apparatus are provided. An ultrasonic transducer includes a substrate including a trench formed in a lower surface of the substrate; and a first element and a second element formed on an upper surface of the substrate and are located adjacent to each other, wherein the trench is positioned between the first element and the second element, wherein the first element and the second element each include a plurality of ultrasonic cells that are two-dimensionally arranged; wherein a first contour line of the first element and a second contour line of the second element, which are adjacent to each other, each form a zig-zag line which are complementary with each other, and the trench is formed in a zig-zag pattern between the first contour line and the second contour line.

Abstract: An electro-acoustic transducer includes a conductive substrate provided with at least one cell and at least one electrode, and a pad substrate disposed corresponding to the conductive substrate and provided with at least one pad corresponding to the electrode, in which at least one of the electrode and the pad includes an electric pattern for electric connection and at least one dummy pattern that is provided around the electric pattern to be separated the electric pattern.

Abstract: An ultrasonic transducer structure, an ultrasonic transducer, and a method of manufacturing the ultrasonic transducer are provided. The ultrasonic transducer structure includes a driving wafer that includes a driving circuit; and an ultrasonic transducer wafer that is disposed on the driving wafer and includes a first wafer in which a via-hole is formed, a first insulating layer formed on the first wafer, a second wafer spaced apart from the first insulating layer, and a cavity formed between the first insulating layer and the second wafer.

Abstract: An electro-acoustic transducer includes a conductive substrate provided with at least one cell and at least one electrode, and a pad substrate disposed corresponding to the conductive substrate and provided with at least one pad corresponding to the electrode, in which at least one of the electrode and the pad includes an electric pattern for electric connection and at least one dummy pattern that is provided around the electric pattern to be separated the electric pattern.

Abstract: A breast scanning apparatus which uses photoacoustic ultrasonic waves is provided. The breast scanning apparatus includes a body which includes a first hole and a second hole which are horizontally parallel to each other; a first compression plate and a second compression plate, at least one of which is movable in a vertical direction with respect to the body; a first sliding plate and a second sliding plate, which are respectively installed on surfaces of the first compression plate and the second compression plate and are facing each other and are movable in a first direction; a first ultrasonic transducer array in the first compression plate and facing the first sliding plate; and a first laser head in the first compression plate, which is movable in a second direction which is perpendicular to the first direction.

Abstract: An ultrasonic transducer and ultrasonic diagnostic apparatus are provided. An ultrasonic transducer includes a substrate including a trench formed in a lower surface of the substrate; and a first element and a second element formed on an upper surface of the substrate and are located adjacent to each other, wherein the trench is positioned between the first element and the second element, wherein the first element and the second element each include a plurality of ultrasonic cells that are two-dimensionally arranged; wherein a first contour line of the first element and a second contour line of the second element, which are adjacent to each other, each form a zig-zag line which are complementary with each other, and the trench is formed in a zig-zag pattern between the first contour line and the second contour line.

Abstract: A cell of an ultrasonic transducer is provided. The cell includes a substrate; a supporting portion disposed on the substrate; a thin film spaced apart from the substrate and the supporting portion; and a connection portion which connects the supporting portion and the thin film. The connection portion may include a deformation portion that is elastically deformable. A channel of the ultrasonic transducer includes a plurality of cells arranged in an array. The ultrasonic transducer includes a plurality of channels arranged in an array.

Abstract: An ultrasonic transducer structure, an ultrasonic transducer, and a method of manufacturing the ultrasonic transducer are provided. The ultrasonic transducer structure includes a driving wafer that includes a driving circuit; and an ultrasonic transducer wafer that is disposed on the driving wafer and includes a first wafer in which a via-hole is formed, a first insulating layer formed on the first wafer, a second wafer spaced apart from the first insulating layer, and a cavity formed between the first insulating layer and the second wafer.

Abstract: A chip package structure includes a substrate in which a plurality of grooves are formed, an adhesive layer disposed on the substrate, and a plurality of chips attached to the adhesive layer. In addition, a method of fabricating the chip package structure includes forming a plurality of grooves in the substrate, dispensing a die attach material on a plurality of chip attaching regions between the plurality of grooves, and attaching a plurality of chips respectively on the plurality of chip attaching regions.

Abstract: A method for fabricating a micro speaker is provided, including forming a package wafer and a device wafer by batch processing, bonding the package wafer and the device wafer to each other, and forming a diaphragm by isotropic-etching a back surface of the device wafer using a xenon difluoride (XeF2). As a result, a micro-electronic-mechanic system (MEMS) technology-based piezoelectric micro speaker having a wide frequency response range is realized, by batch processing, thereby providing simplified structure and processing and reducing fabricating cost.

Abstract: A cell of an ultrasonic transducer is provided. The cell includes a substrate; a supporting portion disposed on the substrate; a thin film spaced apart from the substrate and the supporting portion; and a connection portion which connects the supporting portion and the thin film. The connection portion may include a deformation portion that is elastically deformable. A channel of the ultrasonic transducer includes a plurality of cells arranged in an array. The ultrasonic transducer includes a plurality of channels arranged in an array.

Abstract: A micro thin-film structure, a micro electro-mechanical system (MEMS) switch, and methods of fabricating them. The micro thin-film structure includes at least two thin-films having different properties and laminated in sequence to form an upper layer and a lower layer, wherein an interface between the upper and lower layers is formed to be oriented to at least two directions. The micro thin film structure, and method of forming, may be applied to a movable electrode of an MEMS switch. The thin-film structure may be formed by forming through-holes in the lower layer, and depositing the upper layer in the form of being engaged in the through-holes. Alternatively, the thin-film structure may be made by forming prominence and depression parts on the top side of the lower layer and then depositing the upper layer on the top side of the lower layer having the prominence and depression parts.

Abstract: A MEMS RF-switch is provided for controlling switching on/off of transmission of AC signals. The MEMS RF-switch of the present invention includes: a first electrode coupled to one terminal of the power source; a semiconductor layer combined with an upper surface of the first electrode, and forming a potential barrier to become insulated when a bias signal is applied from the power source; and a second electrode disposed at a predetermined distance away from the semiconductor layer, and being coupled to the other terminal of the power source, wherein the second electrode contacts the semiconductor layer when a bias signal is applied from the power source. Therefore, although the bias signal may not be cut off, free electrons and holes are recombined in the semiconductor layer, whereby charge buildup and sticking can be prevented.

Abstract: A micro thin-film structure, a micro electro-mechanical system (MEMS) switch, and methods of fabricating them. The micro thin-film structure includes at least two thin-films having different properties and laminated in sequence to form an upper layer and a lower layer, wherein an interface between the upper and lower layers is formed to be oriented to at least two directions. The micro thin film structure, and method of forming, may be applied to a movable electrode of an MEMS switch. The thin-film structure may be formed by forming through-holes in the lower layer, and depositing the upper layer in the form of being engaged in the through-holes. Alternatively, the thin-film structure may be made by forming prominence and depression parts on the top side of the lower layer and then depositing the upper layer on the top side of the lower layer having the prominence and depression parts.

Abstract: A micro thin-film structure, a micro electro-mechanical system (MEMS) switch, and methods of fabricating them. The micro thin-film structure includes at least two thin-films having different properties and laminated in sequence to form an upper layer and a lower layer, wherein an interface between the upper and lower layers is formed to be oriented to at least two directions. The micro thin film structure, and method of forming, may be applied to a movable electrode of an MEMS switch. The thin-film structure may be formed by forming through-holes in the lower layer, and depositing the upper layer in the form of being engaged in the through-holes. Alternatively, the thin-film structure may be made by forming prominence and depression parts on the top side of the lower layer and then depositing the upper layer on the top side of the lower layer having the prominence and depression parts.

Abstract: A micro thin-film structure, a micro electro-mechanical system (MEMS) switch, and methods of fabricating them. The micro thin-film structure includes at least two thin-films having different properties and laminated in sequence to form an upper layer and a lower layer, wherein an interface between the upper and lower layers is formed to be oriented to at least two directions. The micro thin film structure, and method of forming, may be applied to a movable electrode of an MEMS switch. The thin-film structure may be formed by forming through-holes in the lower layer, and depositing the upper layer in the form of being engaged in the through-holes. Alternatively, the thin-film structure may be made by forming prominence and depression parts on the top side of the lower layer and then depositing the upper layer on the top side of the lower layer having the prominence and depression parts.

Abstract: A MEMS RF-switch is provided for controlling switching on/off of transmission of AC signals. The MEMS RF-switch of the present invention includes: a first electrode coupled to one terminal of the power source; a semiconductor layer combined with an upper surface of the first electrode, and forming a potential barrier to become insulated when a bias signal is applied from the power source; and a second electrode disposed at a predetermined distance away from the semiconductor layer, and being coupled to the other terminal of the power source, wherein the second electrode contacts the semiconductor layer when a bias signal is applied from the power source. Therefore, although the bias signal may not be cut off, free electrons and holes are recombined in the semiconductor layer, whereby charge buildup and sticking can be prevented.

Abstract: A MEMS RF-switch is provided for controlling switching on/off of transmission of AC signals. The MEMS RF-switch of the present invention includes: a first electrode coupled to one terminal of the power source; a semiconductor layer combined with an upper surface of the first electrode, and forming a potential barrier to become insulated when a bias signal is applied from the power source; and a second electrode disposed at a predetermined distance away from the semiconductor layer, and being coupled to the other terminal of the power source, wherein the second electrode contacts the semiconductor layer when a bias signal is applied from the power source. Therefore, although the bias signal may not be cut off, free electrons and holes are recombined in the semiconductor layer, whereby charge buildup and sticking can be prevented.