Patents by Inventor Hyung-sang Park

Hyung-sang Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040051334
    Abstract: Disclosed is a structure of a damper of a glove box provided at the assistant's seat of an automobile, and more particularly a damper system of a glove box comprising fastening holes formed at side walls of the glove box, plates provided with through holes to be aligned with the fastening holes, a binding groove formed at one side of each plate, a fixing groove formed at the other side of each plate, a plate spring joined with the binding groove and the fixing groove, and protrusions provided at both sides of the glove box so that the plate spring can be fixed when the glove box pivots by the hinge, in which when the glove box pivots, the plate springs contact the protrusions, whereby the weight of the glove box can be reduced.
    Type: Application
    Filed: December 30, 2002
    Publication date: March 18, 2004
    Applicant: Hyundai Mobis, Co., Ltd.
    Inventor: Hyung-Sang Park
  • Publication number: 20030080049
    Abstract: The present invention relates to a super water-repellent organic/inorganic composite material, more particularly to a new-concept super water-repellent organic/inorganic composite material with superior separation property having skin layer chemically immobilized with functional polymer on the porous inorganic support surface with fractal surface structure and pores of nanometers to micrometers, using grafting-from surface polymerization method.
    Type: Application
    Filed: May 7, 2002
    Publication date: May 1, 2003
    Inventors: Soo-Bok Lee, In-Joon Park, Kwang-Won Lee, Dong-Kwon Kim, Jeong-Hun Kim, Jong-Wook Ha, Hyung-Sang Park, Dae-Hwan Jung, Juergen Ruehe
  • Publication number: 20010019891
    Abstract: A method of forming copper conductors for interconnecting active and passive elements as well as signal and power lines for circuits and devices on silicon wafers is disclosed. The method disclosed herein involves with using catalysts in conjunction with a chemical vapor deposition(CVD) process with typically using copper as a source material for forming interconnecting conductors. Interconnecting method for filling trenches, via holes, contacts, large trenches and holes for power devices and lines as well as for forming large passive elements is also disclosed. Disclosed herein are also a method of filling narrow and deep trenches and small in diameter and deep holes, and a method of forming very thin film on the flat top surface so that an etchback process, such as wet or dry etchback as well as plasma etchback processes, can be used for removing a thin film in preparation for subsequent processing steps, thereby rather expensive chemical mechanical polishing(CMP) process need not be used.
    Type: Application
    Filed: December 15, 2000
    Publication date: September 6, 2001
    Applicant: GENITECH CO., LTD.
    Inventors: Won Yong Koh, Hyung Sang Park, Ji Hwa Lee