Abstract: There is provided a heterogeneous computing method. A heterogeneous computing method includes performing offline learning on an algorithm using compilations and runtimes of application programs, executing a first application program in a mobile device, distributing a workload to a central processing unit (CPU) and a graphic processing unit (GPU) in the first application program, using the algorithm, performing online learning to reset the workload distributed to the CPU and GPU in the first application program, and resetting the workload distributed to the CPU and GPU in the first application program, corresponding to a result of the online learning.

Abstract: Provided is an electronic device. The electronic device includes a first semiconductor layer and a second semiconductor layer sequentially stacked on a substrate and a source electrode, a gate electrode, and a drain electrode arranged on the second semiconductor layer. The electronic device further includes a field plate which is electrically connected to the source electrode and extends towards the drain electrode, wherein the field plate becomes farther away from the substrate as the field plate becomes closer to the drain electrode.

Abstract: Provided are a foreign material detecting device and method for detecting only a foreign material on a surface of a substrate except for a foreign material on a lower surface of the substrate in a manufacturing process of a transparent substrate passing light therethrough, such as a glass substrate used in a flat panel display (FPD) such as a liquid crystal display (LCD), an organic light emitting diode (OLED), a plasma display panel (PDP), etc., a sapphire wafer used in some of semiconductors, or the like, and in a pattern forming process in a manufacturing process of the FPD and the semiconductor using the transparent substrate. More particularly, provided are a foreign material detecting device and method for detecting only a foreign material on a surface of an ultra-thin transparent substrate having a thickness of 0.3 T or less.

Abstract: A semiconductor device includes a semiconductor structure including a substrate, a first semiconductor layer on the substrate, and a second semiconductor layer on the first semiconductor layer, a first passivation pattern provided on the semiconductor structure, and first and second conductive patterns provided on the semiconductor structure and spaced from the first passivation pattern.

Abstract: Provided is a hybrid diode device. The hybrid diode device includes a first lower nitride layer disposed on a substrate and including a first 2-dimensional electron gas (2DEG) layer, a second lower nitride layer extending from the first lower nitride layer to the outside of the substrate and including a second 2DEG layer, a first upper nitride layer disposed on the first lower nitride layer, a second upper nitride layer disposed on the second lower nitride layer, a first cap layer disposed on the first upper nitride layer, a second cap layer disposed on the second upper nitride layer, a first electrode structure connected to the first lower nitride layer and the first cap layer; and a second electrode structure connected to the second lower nitride layer and the first electrode structure. The second lower nitride layer generates electric energy through dynamic movement.

Abstract: Provided is a semiconductor device. The semiconductor device includes a substrate including a cantilever configured to generate a flow of cooling media through dynamic movement, an active area on the substrate which an electronic device is provided on, an insulation layer disposed to be spaced apart from the active area on the substrate, a lower electrode on the insulation layer, a piezoelectric film on the lower electrode, and an upper electrode on the piezoelectric film.

Abstract: A jack detector detects a combination state between a socket including a detecting pin and a first signal pin and a jack. The jack detector includes a first current source for supplying a first detecting current, a second current source for supplying a second detecting current larger than the first detecting current, and a buffer for generating a detecting signal in accordance with a detecting pin voltage input from the detecting pin. The second current source instead of the first current source is connected to the detecting pin in synchronization with a combination starting point when the detecting pin and the first signal pin are electrically connected to each other and it is determined that the jack is combined with the socket when the detecting signal is maintained at a state of the combination starting point.

Abstract: Provided is an electronic device. The electronic device includes a first semiconductor layer and a second semiconductor layer sequentially stacked on a substrate and a source electrode, a gate electrode, and a drain electrode arranged on the second semiconductor layer. The electronic device further includes a field plate which is electrically connected to the source electrode and extends towards the drain electrode, wherein the field plate becomes farther away from the substrate as the field plate becomes closer to the drain electrode.

Abstract: Disclosed is a power converting device including: a first laminate having a plurality of non-magnetic substrates which are laminated; electronic devices disposed on at least one of the non-magnetic substrates; first conductive patterns disposed on the non-magnetic substrate on which the electronic devices are disposed, the first conductive patterns being connected to the electronic devices; at least one via electrode connecting the respective first conductive patterns to each other; a second laminate disposed on one side of the first laminate and having a plurality of magnetic sheets which are laminated; second conductive patterns disposed on at least two magnetic sheets among the plurality of magnetic sheets; and at least one via electrode connecting the respective second conductive patterns to each other, wherein the first and second via electrodes are connected to each other.

Abstract: Provided is a bridge diode according to an embodiment of the inventive concept. The bridge diode includes a first structure including a first lower nitride film and a first upper nitride film, which are laminated on the substrate, a second structure including a second lower nitride film and a second upper nitride film, which are laminated on the substrate, a first electrode structural body disposed on the first structure, and a second electrode structural body disposed on the second structure.

Abstract: A first nitride semiconductor layer of a semiconductor device is provided on a substrate, a second nitride semiconductor layer is provided on the first nitride semiconductor layer, a first ohmic metal and a second ohmic metal are provided on the second nitride semiconductor layer, a recess region is provided in the second nitride semiconductor layer between the first ohmic metal and the second ohmic metal, a passivation layer covers side of the first ohmic metal and a bottom surface and sides of the recess region, and a Schottky electrode is provided on the first ohmic metal and extends into the recess region.

Abstract: Provided are a foreign material detecting device and method for detecting only a foreign material on a surface of a substrate except for a foreign material on a lower surface of the substrate in a manufacturing process of a transparent substrate passing light therethrough, such as a glass substrate used in a flat panel display (FPD) such as a liquid crystal display (LCD), an organic light emitting diode (OLED), a plasma display panel (PDP), etc., a sapphire wafer used in some of semiconductors, or the like, and in a pattern forming process in a manufacturing process of the FPD and the semiconductor using the transparent substrate. More particularly, provided are a foreign material detecting device and method for detecting only a foreign material on a surface of an ultra-thin transparent substrate having a thickness of 0.3 T or less.

Abstract: Provided is a semiconductor device. The semiconductor device includes a substrate including a cantilever configured to generate a flow of cooling media through dynamic movement, an active area on the substrate which an electronic device is provided on, an insulation layer disposed to be spaced apart from the active area on the substrate, a lower electrode on the insulation layer, a piezoelectric film on the lower electrode, and an upper electrode on the piezoelectric film.

Abstract: An apparatus for providing information about an available service using a proxy server and a method thereof. The apparatus includes an available service checker, a database, an available service searcher, and an available service broadcaster. The apparatus may provide information through the proxy server regarding available services of a device that is not currently connected to a basic service set (BSS), thereby preventing generation of excessive amount of traffic.

Abstract: Disclosed is a message communication method of transmitting and receiving a certain message, independently of any network, without privacy invasion issues. The method includes generating vendor specific data on the basis of input information, adding the generated vendor specific data to a P2P information element of a probe request frame, and transmitting the probe request frame to another message communication apparatus. Thus, an apparatus conforming to a Wi-Fi Direct standard may transmit/receive a certain message to/from another terminal independently of a use region, a use environment, and a network of a large telecommunication vendor, without privacy invasion issues.

Abstract: A cost-cognitive base station apparatus, a cost-cognitive user terminal, and a cost-cognitive network method, in which by recognizing costs based on network congestion, a user may select and receive appropriate network services, thereby reducing telecommunication expenses and inducing the user to a less congested network, which leads to improved network management efficiency.

Abstract: The present invention relates to smart glasses, and the smart glasses include: a frame mounted with lens; a pair of temples extended in one direction from both side ends of the frame so as to face each other; a rear camera mounted at an end of the temple and configured to photograph a rear image of a wearer; a display unit installed at one side of the lens and configured to display the rear image photographed by the rear camera; and a control device configured to control an operation of each of the constituent elements, thereby enabling a user to check a situation in the rear view without turning his/her head.

Abstract: An apparatus and a method for managing instant connection based on a wireless local area network are provided. The method includes: creating, by an accessed terminal, connection information required for setting connection therewith; creating, by the accessed terminal, a management frame by using the connection information; transmitting, by the accessed terminal, the created management frame to a peripheral terminal; receiving, by the peripheral terminal, the management frame and extracting connection information from the received management frame; and setting, by the peripheral terminal, connection with the accessed terminal by accessing the accessed terminal by using the extracted connection information to rapidly access a desired terminal without performing a device discovery process.