Abstract: A display device includes a first conductive layer disposed on a substrate, a passivation layer disposed on the first conductive layer, a second conductive layer disposed on the passivation layer, a via layer disposed on the second conductive layer, a third conductive layer disposed on the via layer, the third conductive layer including a first electrode, a second electrode, a connection pattern, the first electrode, the second electrode, and the connection pattern being spaced apart from each other, and a light emitting element, a first end and a second end of the light emitting element being disposed on the first electrode and the second electrode, respectively, wherein the connection pattern electrically connects the first conductive layer and the second conductive layer through a first contact hole penetrating the via layer and the passivation layer.

Abstract: A display device includes: a substrate; a first conductive layer on the substrate and comprising a first signal line; an insulating layer pattern on the first conductive layer; a semiconductor pattern on the insulating layer pattern; a gate insulating layer on the semiconductor pattern; and a second conductive layer comprising a gate electrode on the gate insulting layer and a first source/drain electrode and a second source/drain electrode, each on at least a part of the semiconductor pattern, wherein the insulating layer pattern and the semiconductor pattern have a same planar shape, the semiconductor pattern comprises a channel region overlapping the gate electrode, a first source/drain region on a first side of the channel region and a second source/drain region on a second side of the channel region, and the first source/drain electrode electrically connects the first source/drain region and the first signal line.

Abstract: A display device according to an embodiment includes a light blocking layer disposed on a substrate; an oxygen supply layer disposed on and contacting the light blocking layer; a semiconductor layer disposed on the oxygen supply layer; and a light emitting diode electrically connected with the semiconductor layer. The semiconductor layer includes an oxide semiconductor, and the oxygen supply layer includes a metal oxide that includes at least one of indium, zinc, gallium, and tin.

Abstract: A wafer bonding apparatus is provided includes a lower support plate configured to structurally support a first wafer on an upper surface of the lower support plate; a lower structure adjacent to the lower support plate and movable in a vertical direction that is perpendicular to the upper surface of the lower support plate, an upper support plate configured to structurally support a second wafer on a lower surface of the lower support plate, and an upper structure adjacent to the upper support plate and movable in the vertical direction.

Abstract: A semiconductor package includes a first semiconductor chip, which includes a first semiconductor substrate and a first bonding layer on the first semiconductor substrate. A second semiconductor chip includes a second semiconductor substrate, a second bonding layer bonded to the first bonding layer, and a chip-through-via which penetrates the second semiconductor substrate and is connected to the second bonding layer. A passivation film extends along an upper side of the second semiconductor chip and does not extend along side-faces of the second semiconductor chip. The chip-through-via penetrates the passivation film. A multiple-gap-fill film extends along the upper side of the first semiconductor chip, the side faces of the second semiconductor chip, and the side faces of the passivation film. The multiple-gap-fill films includes an inorganic filling film and an organic filling film which are sequentially stacked on the first semiconductor chip.

Abstract: A wafer bonding apparatus is provided includes a lower support plate configured to structurally support a first wafer on an upper surface of the lower support plate; a lower structure adjacent to the lower support plate and movable in a vertical direction that is perpendicular to the upper surface of the lower support plate, an upper support plate configured to structurally support a second wafer on a lower surface of the lower support plate, and an upper structure adjacent to the upper support plate and movable in the vertical direction.

Abstract: A semiconductor device and a method of manufacturing the same, the device including a through-hole electrode structure extending through a substrate; a redistribution layer on the through-hole electrode structure; and a conductive pad, the conductive pad including a penetrating portion extending through the redistribution layer; and a protrusion portion on the penetrating portion, the protrusion portion protruding from an upper surface of the redistribution layer, wherein a central region of an upper surface of the protrusion portion is flat and not closer to the substrate than an edge region of the upper surface of the protrusion portion.

Abstract: A semiconductor device and a method of manufacturing the same, the device including a through-hole electrode structure extending through a substrate; a redistribution layer on the through-hole electrode structure; and a conductive pad, the conductive pad including a penetrating portion extending through the redistribution layer; and a protrusion portion on the penetrating portion, the protrusion portion protruding from an upper surface of the redistribution layer, wherein a central region of an upper surface of the protrusion portion is flat and not closer to the substrate than an edge region of the upper surface of the protrusion portion.

Abstract: A semiconductor package of a package on package type includes a lower package including a printed circuit board (PCB) substrate including a plurality of base layers and a cavity penetrating the plurality of base layers, a first semiconductor chip in the cavity. a redistribution structure on a first surface of the PCB substrate and on an active surface of the first semiconductor chip, a first cover layer covering the redistribution structure, and the second cover layer covering a second surface of the PCB substrate and an inactive surface of the first semiconductor chip, and an upper package on the second cover layer of the lower package and including a second semiconductor chip.

Abstract: A semiconductor package of a package on package type includes a lower package including a printed circuit board (PCB) substrate including a plurality of base layers and a cavity penetrating the plurality of base layers, a first semiconductor chip in the cavity. a redistribution structure on a first surface of the PCB substrate and on an active surface of the first semiconductor chip, a first cover layer covering the redistribution structure, and the second cover layer covering a second surface of the PCB substrate and an inactive surface of the first semiconductor chip, and an upper package on the second cover layer of the lower package and including a second semiconductor chip.

Abstract: A semiconductor device includes a substrate having a die region and a scribe region surrounding the die region, a plurality of via structures penetrating through the substrate in the die region, a portion of the via structure being exposed over a surface of the substrate, and a protection layer pattern structure provided on the surface of the substrate surrounding a sidewall of the exposed portion of the via structure and having a protruding portion covering at least a portion of the scribe region adjacent to the via structure.

Abstract: A semiconductor device includes a substrate having a die region and a scribe region surrounding the die region, a plurality of via structures penetrating through the substrate in the die region, a portion of the via structure being exposed over a surface of the substrate, and a protection layer pattern structure provided on the surface of the substrate surrounding a sidewall of the exposed portion of the via structure and having a protruding portion covering at least a portion of the scribe region adjacent to the via structure.

Abstract: An apparatus and method connect an Access Point (AP) in a portable terminal. More particularly, an apparatus and method designate a group of searched peripheral APs, and attempt an access to an AP corresponding to a group selected by a user in a portable terminal. The apparatus includes a group set unit and an AP search unit. The group set unit sets items of peripheral APs to a group according to user's selection. After searching the peripheral APs at the time of AP connection, the AP search unit classifies an AP belonging to a selected item and connects to the classified AP.

Abstract: Disclosed is a gate system arranged on two gate frames and detects a tag passing between the two gate frames, the gate system including at least two gate frames that are vertically arranged facing with each other; at least two antenna units that are arranged on the at least two gate frames, respectively; and a reader that is arranged on each of the at least two gate frames and enables the at least two antenna units to emit electromagnetic wave to an article passing between the at least two gate frames using a predetermined frequency signal, and obtains information stored in a tag using a signal that the at least two antenna units receives from the at least two antenna units.

Abstract: Semiconductor devices and methods for fabricating the same are provided. For example, the semiconductor device includes a substrate, a first contact pad formed on the substrate, an insulation layer formed on the substrate and including a first opening which exposes the first contact pad, a first bump formed on the first contact pad and electrically connected to the first contact pad, and a reinforcement member formed on the insulation layer and adjacent to a side surface of the first lower bump. The first bump includes a first lower bump and a first upper bump, which are sequentially stacked on the first contact pad.

Abstract: A method of manufacture of an integrated circuit package system includes forming a substrate with a device thereover, forming an encapsulation having a planar top surface to cover the device and the substrate spanning to an extraction side of the encapsulation, and forming a recess in the encapsulation from the planar top surface.

Abstract: Disclosed is a vector modulator. The vector modulator can control the amplitude and phase of an input signal, by not using amplitude variable attenuators but using phase shifters. Further, the vector modulator has a simple configuration and enables an input signal to be exactly modulated. Furthermore, the vector modulator can modulate the phase of an input signal throughout all areas in the polar coordinate system.

Abstract: Disclosed is an RF transceiver in which transmission and reception are simultaneously performed, wherein a magnitude of a transmission leakage signal mixed into a receiving signal is measured, the maximum and minimum scopes on I/Q vector phase-plane in which an offset vector exists is set using the measured magnitude of the transmission leakage signal, the offset vector offsetting the transmission leakage signal as much as possible, a detection area in which the offset vector exists is determined in the set scope, and the offset vector is detected.

Abstract: Disclosed is an RFID-based reader configured to allow a UHF band RFID reader unit to recognize an RFID tag in a short distance, and to minimize an erroneous recognition, the reader including a gate frame discretely installed at both sides of an entrance and exit, a parabolic surface type reflective plate perpendicularly installed inside of the gate frame, an array antenna arranged on the reflective plate for receiving a tag information transmitted from an RFID tag, and an RFID reader unit for controlling an operation of the array antenna and converting the tag information received from the array antenna to a tag data.

Abstract: An vector modulator using a time delay and a phase shifter is disclosed, the vector modulator including a time delay (110) varying a phase of an input signal by time-delaying the input signal; a first coupler (120) converting the signal outputted in changed phase through the time delay to an I channel signal and a Q channel signal each having a 90° phase difference and outputting the I/Q channel signals; a first phase shifter (130) varying the phase of the I channel signal outputted from the first coupler within a predetermined phase range and outputting the phase-variable I channel signal; a second phase shifter (140) varying the Q channel signal outputted from the first coupler within a predetermined phase range and outputting the phase-variable Q channel signal; and a second coupler (150) coupling phase-variable I/Q channel signals and outputting the coupled signals.