Abstract: A semiconductor device and method of formation are provided herein. A semiconductor device includes a first active region adjacent a first side of a shallow trench isolation (STI) region. The first active region including a first proximal fin having a first proximal fin height adjacent the STI region, and a first distal fin having a first distal fin height adjacent the first proximal fin, the first proximal fin height less than the first distal fin height. The STI region includes oxide, the oxide having an oxide volume, where the oxide volume is inversely proportional to the first proximal fin height. A method of formation includes forming a first proximal fin with a first proximal fin height less than a first distal fin height of a first distal fin, such that the first proximal fin is situated between the first distal fin and an STI region.

Abstract: A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

Abstract: A semiconductor device and method of formation are provided herein. A semiconductor device includes a first active region adjacent a first side of a shallow trench isolation (STI) region. The first active region including a first proximal fin having a first proximal fin height adjacent the STI region, and a first distal fin having a first distal fin height adjacent the first proximal fin, the first proximal fin height less than the first distal fin height. The STI region includes oxide, the oxide having an oxide volume, where the oxide volume is inversely proportional to the first proximal fin height. A method of formation includes forming a first proximal fin with a first proximal fin height less than a first distal fin height of a first distal fin, such that the first proximal fin is situated between the first distal fin and an STI region.

Abstract: One embodiment of a sleeping bag extension piece or elongated sleeping bag with sufficient length beyond a traditional sleeping bag to rest upon the sleep surface above the user's shoulder line creating a natural body heat seal and restricting air flow between the sleeping bag top and sleep surface above the shoulder line, and having a separation to allow a user's head to protrude.

Abstract: One embodiment of a sleeping bag extension piece or elongated sleeping bag with sufficient length beyond a traditional sleeping bag to rest upon the sleep surface above the user's shoulder line creating a natural body heat seal and restricting air flow between the sleeping bag top and sleep surface above the shoulder line, and having a separation to allow a user's head to protrude.

Abstract: A method of fabricating semiconductor integrated circuits includes (1) providing a spin-on tool comprising a rotatable platen for holding and spinning a wafer disposed thereon, a fluid supply system for providing spin-on solution onto the wafer, and a detector fixed in a position above the wafer, wherein the wafer has a radius R; (2) spin-on coating the wafer by depositing the spin-on solution onto surface of the wafer from its center and spinning-off to leave a spin coat material layer; and (3) spinning the wafer and scanning the spin coat material layer by impinging an incident light beam emanated from the fixed detector and detecting a reflected light beam.

Abstract: An optical fiber inclinometer comprises a pair of fiber Bragg grating devices, a fixed base, a connection plate, and a rotatable base. One end of the connection plate is fixed to the fixed base, whereas the other end of the connection plate is connected to the rotatable base through the joint of a turning pair mechanism between them. The two ends of each fiber Bragg grating device are installed onto the fixed base and the rotatable base respectively, and the two devices are mounted on the opposite side of the connection plate. Once the rotatable base rotates around the joint of the connection plate, axial tensile elongation occurs in one of the fiber Bragg grating devices, whereas axial compressive deformation occurs in the other device. The rotation angle of the rotatable base relative to the connection plate can be obtained by measuring and calculating the Bragg wavelength drifts of the pair of fiber Bragg grating devices respectively.

Abstract: A method of fabricating semiconductor integrated circuits includes (1) providing a spin-on tool comprising a rotatable platen for holding and spinning a wafer disposed thereon, a fluid supply system for providing spin-on solution onto the wafer, and a detector fixed in a position above the wafer, wherein the wafer has a radius R; (2) spin-on coating the wafer by depositing the spin-on solution onto surface of the wafer from its center and spinning-off to leave a spin coat material layer; and (3) spinning the wafer and scanning the spin coat material layer by impinging an incident light beam emanated from the fixed detector and detecting a reflected light beam.

Abstract: An optical fiber inclinometer comprises a pair of fiber Bragg grating devices, a fixed base, a connection plate, and a rotatable base. One end of the connection plate is fixed to the fixed base, whereas the other end of the connection plate is connected to the rotatable base through the joint of a turning pair mechanism between them. The two ends of each fiber Bragg grating device are installed onto the fixed base and the rotatable base respectively, and the two devices are mounted on the opposite side of the connection plate. Once the rotatable base rotates around the joint of the connection plate, axial tensile elongation occurs in one of the fiber Bragg grating devices, whereas axial compressive deformation occurs in the other device. The rotation angle of the rotatable base relative to the connection plate can be obtained by measuring and calculating the Bragg wavelength drifts of the pair of fiber Bragg grating devices respectively.