Abstract: The present disclosure relates generally to polypeptides derived from marsupial adeno-associated vims (AAV). The disclosure is also related to nucleic acid molecules encoding the polypeptides, and vectors comprising the nucleic acid molecules, and AAV vectors comprising the polypeptides. The disclosure also relates to uses of the nucleic acid molecules, polypeptides and AAV vectors, such as for capsid diversification.

Abstract: Implementations described and claimed herein provide systems and methods for breaking cement within an annulus of a wellbore. In one implementation, an annulus cement breaking system includes a cement compression tool operable to be disposed within an inner bore of a casing having a longitudinal length. The casing is disposed within a wellbore formed in a subterranean formation having a cement layer disposed within an annulus formed between the casing and the subterranean formation. One or more actuation elements are coupled with the cement compression tool, and the one or more actuation elements are operable to engage the inner bore. The one or more actuation elements are transitionable between an unactuated state and an actuated stated. The actuated state operable to engage the inner bore of the casing, thereby radially expanding the casing and compressing the cement layer.

Abstract: An electronic device provides, to a user, a user-curated playlist, the user-curated playlist including an ordered set of media items that were added by the user. While providing a first media item in the ordered set of media items, the electronic device receives a first user input selecting an option to include recommended media items in the user-curated playlist. In response to the first user input, the electronic device updates the user-curated playlist to include a first recommended media item, the first recommended media item selected without user intervention based at least in part on attributes of the user-curated playlist. The first recommended media item is positioned in the user-curated playlist in between media items that were added to the ordered set of media items by the user.

Abstract: An optical modulator includes a modulation region, an input port, an output port, and a modulation actuator. The modulation region includes an inhomogeneous arrangement of two or more different materials having different refractive indexes to structure the modulation region to manipulate one or more optical properties of an optical carrier wave in response to a modulation bias. The input port is optically coupled to the modulation region to inject the optical carrier wave into the modulation region. The modulation actuator is disposed proximate to the modulation region and adapted to apply the modulation bias to the modulation region to generate a modulated wave. The modulation bias adjusts at least one of the different refractive indexes of the inhomogeneous arrangement to provide variable control of the one or more optical properties of the optical carrier wave. The output port is optically coupled to the modulation region to receive the modulated wave.

Abstract: In some embodiments, techniques for creating a design for a physical device are provided. A computing system receives an initial design of the physical device. Performance of the physical device is simulated using the initial design. A performance loss value is determined for the physical device based on the simulated performance at a target wavelength and one or more delta wavelengths. The performance loss value is backpropagated to determine a gradient corresponding to an influence of changes in the initial design on the total performance loss value. The initial design of the physical device is revised based at least in part on the gradient.

Abstract: In one embodiment, a negative capacitance transistor device includes a perovskite semiconductor material layer with first and second perovskite conductors on opposite ends of the perovskite semiconductor material layer. The device further includes a dielectric material layer on the perovskite semiconductor material layer between the first and second perovskite conductors, a perovskite ferroelectric material layer on the dielectric material layer, and a third perovskite conductor on the perovskite ferroelectric material layer.

Abstract: Perovskite oxide field effect transistors comprise perovskite oxide materials for the channel, source, drain, and gate oxide regions. The source and drain regions are doped with a higher concentration of n-type or p-type dopants (depending on whether the transistor is an n-type or p-type transistor) than the dopant concentration in the channel region to minimize Schottky barrier height between the source and drain regions and the source and drain metal contact and contact resistance.

Abstract: A transistor device may include a first perovskite gate material, a first perovskite ferroelectric material on the first gate material, a first p-type perovskite semiconductor material on the first ferroelectric material, a second perovskite ferroelectric material on the first semiconductor material, a second perovskite gate material on the second ferroelectric material, a third perovskite ferroelectric material on the second gate material, a second p-type perovskite semiconductor material on the third ferroelectric material, a fourth perovskite ferroelectric material on the second semiconductor material, a third perovskite gate material on the fourth ferroelectric material, a first source/drain metal adjacent a first side of each of the first semiconductor material and the second semiconductor material, a second source/drain metal adjacent a second side opposite the first side of each of the first semiconductor material and the second semiconductor material, and dielectric materials between the source/drain

Abstract: A two-terminal ferroelectric perovskite diode comprises a region of ferroelectric perovskite material positioned adjacent to a region of n-type doped perovskite semiconductor material. Asserting a positive voltage across the diode can cause the polarization of the ferroelectric perovskite material to be set in a first direction that causes the diode to be placed in a low resistance state due to the formation of an accumulation region in the perovskite semiconductor material at the ferroelectric perovskite-perovskite semiconductor boundary. Asserting a negative voltage across the diode can cause the polarization of the ferroelectric perovskite material to be set in a second direction that causes the diode to be placed in a high resistance state due to the formation of a depletion region in the perovskite semiconductor material at the ferroelectric perovskite-perovskite semiconductor material. These non-volatile low and high resistance states enable the diode to be used as a non-volatile memory element.

Abstract: Technologies for a field effect transistor (FET) with a ferroelectric gate dielectric are disclosed. In an illustrative embodiment, a transistor includes a gate of strontium ruthenate and a ferroelectric gate dielectric layer of barium titanate. In order to prevent migration of ruthenium from the strontium ruthenate to the barium titanate, a barrier layer is placed between the gate and the ferroelectric gate dielectric layer. The barrier layer may be a metal oxide, such as strontium oxide, barium oxide, zirconium oxide, etc.

Abstract: The present disclosure relates generally to modified adeno-associated virus (AAV) capsid polypeptides and encoding nucleic acid molecules. The disclosure also relates to AAV vectors comprising the capsid polypeptides, and nucleic acid vectors (e.g. plasmids) comprising the encoding nucleic acids molecules, as well as to host cells comprising the vectors. The disclosure also relates to methods and uses of the polypeptides, encoding nucleic acids molecules, vectors and host cells.

Abstract: A transistor device may be formed with a doped perovskite material as a channel region. The doped perovskite material may be formed via an epitaxial growth process from a seed layer, and the channel regions of the transistor device may be formed from lateral overgrowth from the epitaxial growth process.

Abstract: An electronic device provides, to a user, a user-curated playlist, the user-curated playlist including an ordered set of media items that were added by the user. While providing a first media item in the ordered set of media items, the electronic device receives a first user input selecting an option to include recommended media items in the user-curated playlist. In response to the first user input, the electronic device updates the user-curated playlist to include a first recommended media item, the first recommended media item selected without user intervention based at least in part on attributes of the user-curated playlist. The first recommended media item is positioned in the user-curated playlist in between media items that were added to the ordered set of media items by the user.

Abstract: A method of preconditioning time-series data for improved efficiency. The method includes repeatedly recognizing new time series entries for each of a plurality of tracked entities. For each of the plurality of tracked entities, a new time-series data entry for the tracked entity is promoted responsive to the new time-series data entry including a changed value in a normalized field. However, a previous time-series data entry for the tracked entity is maintained responsive to the new time-series data entry including an unchanged value in the normalized field. The method further incudes generating a synthetic time-series data entry for every tracked entity without a time-series data entry in a fixed time period.

Abstract: Methods of treatment of complement-mediated disorders, in particular disorders associated with over-activity of the complement C3b feedback cycle (for example, age-related macular degeneration (AMI)), using gene therapy is described. According to the methods, levels of complement Factor I are elevated by administration of a recombinant viral vector encoding Factor I such that a therapeutically effective amount of the encoded Factor I is expressed from the vector in the subject. Recombinant viral vectors encoding Factor I, recombinant virus particles encapsidating the vectors, and their use in the methods of treatment, is also described.

Abstract: Valleytronic magnetoelectric spin-orbit (MESO) logic devices comprise a charge-to-spin conversion input module that comprises a magnetoelectric capacitor. The input module converts a differential input voltage into a magnetization orientation of a ferromagnet possessing in-plane anisotropy (IPA) through exchange coupling between the IPA ferromagnet and the magnetoelectric layer of the capacitor. The magnetization orientation of the IPA ferromagnet can represent the logic state of the valleytronic MESO device. A spin-to-charge conversion output module comprises a ferromagnet possessing perpendicular magnetic anisotropy (PMA) and a 2D valleytronic material. The IMA and PMA ferromagnets are chirally-coupled through Dzaloshinskii-Moriya interaction, which causes the perpendicular magnetic orientation of the PMA ferromagnet to switch with the in-plane magnetization orientation of the IPA ferromagnet.

Abstract: Technologies for high-performance magnetoelectric spin-orbit (MESO) logic structures are disclosed. In the illustrative embodiment, the spin-orbit coupling layer of a MESO logic structure is a high-entropy perovskite. The use of a high-entropy perovskite provides versatility through tunability, as there is a wide range of possible combinations. Additional layers of the MESO logic structure may also be perovskites, such as the magnetoelectric layer and ferromagnetic layer. The various perovskite layers may be epitaxially compatible, allowing for growth of high-quality layers.

Abstract: An apparatus, comprising a field effect transistor comprising a ferroelectric material, a channel material comprising a transition metal and a chalcogen, a source and a drain coupled to the channel material, the source and drain comprising a conductive material.

Abstract: In embodiments herein, probabilistic and deterministic logic devices include reduced symmetry materials, such as two-dimensional (2D) transition metal dichalcogenide (TMD) materials (e.g., NbSe2 or MoTe2).