Abstract: An inexpensive and secure key management system provides a digital content copy protection system and a method for the same. The key management system is constituted by a master data memory configured to be stored with a device key, a secret data management block configured to convert the device key to a plain text key, a write-in and encryption process block including an encrypting function block for encrypting the plain text key, a nonvolatile memory configured in a first chip and stored with an encryption key encrypted by the write-in and encryption process block, and a signal processing LSI configured in a second chip and including a decrypting function block for decrypting the encryption key.

Abstract: When an oxidation treatment for regenerating a gate insulating film 6 is performed after forming gate electrodes 7A of a polymetal structure in which a WNx film and a W film are stacked on a polysilicon film, a wafer 1 is heated and cooled under conditions for reducing a W oxide 27 on the sidewall of each gate electrode 7A. As a result, the amount of the W oxide 27 to be deposited on the surface of the wafer 1 is reduced.

Abstract: An inscribed gear rotor includes a housing forming a cylindrical space, a driven rotor including a plurality of inner gears, a driving rotor including a plurality of outer gears engaging with the respective inner gears, a plurality of interspaces formed between the inner gears of the driven rotor and the outer gears of the driving rotor respectively, a volume of each of the interspaces being increased and decreased so as to complete one cycle in a rotation for the purposes of performing an intake and a discharge of fluid, an inlet port being in communication with the cylindrical space, an outlet port being in communication with the cylindrical space, and a groove formed on a side face of the driving rotor and being in communication with the inlet port and the at least one of the interspace.

Abstract: When an oxidation treatment for regenerating a gate insulating film 6 is performed after forming gate electrodes 7A of a polymetal structure in which a WNx film and a W film are stacked on a polysilicon film, a wafer 1 is heated and cooled under conditions for reducing a W oxide 27 on the sidewall of each gate electrode 7A. As a result, the amount of the W oxide 27 to be deposited on the surface of the wafer 1 is reduced.

Abstract: A water pump includes a pump body and a block which are respectively provided with attachment surfaces that surround an opening defined by a vortex chamber. A first one of the attachment surfaces is provided with an annular groove. An annular sealing member is embedded in the annular groove. A sealing mechanism for the water pump includes the annular sealing member having a protruding segment protruding from a periphery of the annular sealing member such that the protruding segment extends outward from an outer periphery of a second one of the attachment surfaces; and the annular groove having a branching groove segment which branches out from the annular groove and is provided in the first one of the attachment surfaces such that the protruding segment is embedded in the branching groove segment.

Abstract: An internal gear oil pump rotor assembly which enables the construction of an oil pump that is compact and has high performance. In the oil pump rotor assembly having an inner rotor and an outer rotor, the number of teeth “Zi” of the inner rotor with trochoid tooth profiles is set to be equal to or fewer than “6”, and a ratio Si/So is set so as to satisfy the following inequalities: 0.8?Si/So?1.3, where Si is a cross-sectional area of one external tooth which is formed outside a root circle that is formed along the bottoms of the external teeth of the inner rotor, and So is a cross-sectional area of one internal tooth which is formed inside a root circle that is formed along the bottoms of the internal teeth of the outer rotor.

Abstract: An oil pump apparatus includes a body, a first rotor and a second rotor disposed in the body so as to be able to rotate and a regulator valve mechanism for regulating the pressure of oil discharged to portions of an engine, wherein the regulator valve mechanism is disposed in the inside of the body and the engine and includes a regulator valve member which moves in the direction being in parallel with a rotation as of the first and second rotors in response to the discharged oil pressure.

Abstract: An oil pump apparatus includes a body, a first rotor and a second rotor disposed in the body so as to be able to rotate and a regulator valve mechanism for regulating the pressure of oil discharged to portions of an engine, wherein the regulator valve mechanism is disposed in the inside of the body and the engine and includes a regulator valve member which moves in the direction being in parallel with a rotation as of the first and second rotors in response to the discharged oil pressure.

Abstract: An internal gear oil pump rotor assembly which enables the construction of an oil pump that is compact and has high performance. In the oil pump rotor assembly having an inner rotor and an outer rotor, the number of teeth “Zi” of the inner rotor with trochoid tooth profiles is set to be equal to or fewer than “6”, and a ratio Si/So is set so as to satisfy the following inequalities: 0.8≦Si/So≦1.3, where Si is a cross-sectional area of one external tooth which is formed outside a root circle that is formed along the bottoms of the external teeth of the inner rotor, and So is a cross-sectional area of one internal tooth which is formed inside a root circle that is formed along the bottoms of the internal teeth of the outer rotor.

Abstract: When an oxidation treatment for regenerating a gate insulating film 6 is performed after forming gate electrodes 7A of a polymetal structure in which a WNx film and a W film are stacked on a polysilicon film, a wafer 1 is heated and cooled under conditions for reducing a W oxide 27 on the sidewall of each gate electrode 7A. As a result, the amount of the W oxide 27 to be deposited on the surface of the wafer 1 is reduced.

Abstract: According to the present invention, an overlay margin is secured for matching a wiring electrode 11 with a storage electrode 15 of a capacitor at their point of contact and the required area for a memory cell can be decreased by placing the plug electrode 11 of titanium nitride in the active region of a semiconductor substrate or over the gate electrode, reducing the size of the opening for passing the storage electrode 15 of the capacitor of a stacked structure, and decreasing the line width of a wiring electrode 13. By the common use of the above-mentioned plug electrodes in a CMISFET region in the peripheral circuit and in a memory cell of a static RAM, their circuit layouts can be made compact.

Abstract: According to the present invention, an overlay margin is secured for matching a wiring electrode 11 with a storage electrode 15 of a capacitor at their point of contact and the required area for a memory cell can be decreased by placing the plug electrode 11 of titanium nitride in the active region of a semiconductor substrate or over the gate electrode, reducing the size of the opening for passing the storage electrode 15 of the capacitor of a stacked structure, and decreasing the line width of a wiring electrode 13. By the common use of the above-mentioned plug electrodes in a CMISFET region in the peripheral circuit and in a memory cell of a static RAM, their circuit layouts can be made compact.

Abstract: According to the present invention, an overlay margin is secured for matching a wiring electrode 11 with a storage electrode 15 of a capacitor at their point of contact and the required area for a memory cell can be decreased by placing the plug electrode 11 of titanium nitride in the active region of a semiconductor substrate or over the gate electrode, reducing the size of the opening for passing the storage electrode 15 of the capacitor of a stacked structure, and decreasing the line width of a wiring electrode 13. By the common use of the above-mentioned plug electrodes in a CMISFET region in the peripheral circuit and in a memory cell of a static RAM, their circuit layouts can be made compact.

Abstract: According to the present invention, an overlay margin is secured for matching a wiring electrode 11 with a storage electrode 15 of a capacitor at their point of contact and the required area for a memory cell can be decreased by placing the plug electrode 11 of titanium nitride in the active region of a semiconductor substrate or over the gate electrode, reducing the size of the opening for passing the storage electrode 15 of the capacitor of a stacked structure, and decreasing the line width of a wiring electrode 13. By the common use of the above-mentioned plug electrodes in a CMISFET region in the peripheral circuit and in a memory cell of a static RAM, their circuit layouts can be made compact.

Abstract: According to the present invention, an overlay margin is secured for matching a wiring electrode 11 with a storage electrode 15 of a capacitor at their point of contact and the required area for a memory cell can be decreased by placing the plug electrode 11 of titanium nitride in the active region of a semiconductor substrate or over the gate electrode, reducing the size of the opening for passing the storage electrode 15 of the capacitor of a stacked structure, and decreasing the line width of a wiring electrode 13. By the common use of the above-mentioned plug electrodes in a CMISFET region in the peripheral circuit and in a memory cell of a static RAM, their circuit layouts can be made compact.

Abstract: An oil pump apparatus which includes an oil pump for being driven by a driving source and for being connected to a plurality of components to which an oil is supplied from the oil pump and a control valve preventing the oil which is unnecessary to the components from flowing into the components, wherein at least one of the components is an actuator operated by an oil pressure generated by the oil pump and wherein the control valve permits the oil of which the quantity is smaller than that of the oil which is consumed by the actuator to flow into the components when the actuator is not operated and the control valve permits the oil of which the quantity is larger than that of the oil which is consumed by the actuator to flow into the components when the actuator is operated.

Abstract: A semiconductor integrated circuit device offering a phase pattern makeup that excludes mixture of insular and linear patterns in a mask for forming a single wire electrode layer so as to eliminate inconsistency in the Levenson arrangement of phase shifters. A plurality of wire electrodes are spaced a minimum size apart and are in different phases. Between two adjacent wire electrodes are plug electrodes each formed with an upper and a lower layer plug electrode in direct contact, with no intervention of wire electrodes and without the presence of an insular pattern made of the same wire electrode layer. This setup allows the Levenson arrangement to take shape for enhanced pattern density, whereby a semiconductor integrated circuit device of a high degree of integration is implemented.

Abstract: An oil pump apparatus which includes an oil pump for being driven by a driving source and for being connected to a plurality of components to which an oil is supplied from the oil pump and a control valve preventing the oil which is unnecessary to the components from flowing into the components, wherein at least one of the components is an actuator operated by an oil pressure generated by the oil pump and wherein the control valve permits the oil of which the quantity is smaller than that of the oil which is consumed by the actuator to flow into the components when the actuator is not operated and the control valve permits the oil of which the quantity is larger than that of the oil which is consumed by the actuator to flow into the components when the actuator is operated.

Abstract: An oil pump apparatus incorporates, an oil pump housing, and a rotor located in the oil pump housing, wherein the rotor forms a first set of pockets having a capacity increasing toward the rotating direction of the rotor and a second set of pockets having a capacity decreasing toward the rotating direction of the rotor. The apparatus further includes a plurality of suction ports connected with the first set of pockets, each of the suction ports being isolated from other adjacent suction ports, a discharge port connected with the second set of the pockets, and a control valve.

Abstract: A semiconductor memory wherein a memory cell region having a plurality of memory cells and a relatively high altitude above the surface of semiconductor substrate is formed at a recessed part of the semiconductor substrate having the recessed part and a projected part, and wherein a peripheral circuit region having a comparatively low altitude from the surface of the semiconductor substrate is formed at the projected part of the semiconductor substrate.