Abstract: A color signal processor in which a color subcarrier is multiplied with either a signal harmonic or a phase shifted harmonic of a low frequency chrominance signal, depending on whether the R-Y axis of the chrominance signal is inverted. Band pass filtering extracts an arithmetic carrier signal resulting from the multiplication. The low frequency chrominance signal is multiplied by the extracted arithmetic carrier, and band pass filtering removes both upper and lower side band components generated in accordance with the low frequency chrominance signal multiplication. Various configurations of the above invention eliminate the need for a circuit inverting the R-Y axis, simplifying the structure of color signal processors and related devices. In addition, since no resonating circuit is used, the invention can be effectively implemented in an integrated circuit.

Abstract: An oil pump system includes an oil pump, a first hydraulic passage, a second hydraulic passage, a return hydraulic passage, and a control valve. When a revolving speed of a rotor of the oil pump is low, and when a hydraulic pressure of a hydraulic oil, discharged out of a first outlet port of the oil pump to the first hydraulic passage, is lower than a predetermined value, a valve body of the control valve is placed at a first position, thereby joining the hydraulic oil, flowing in the first hydraulic passage, with the hydraulic oil, discharged out of a second outlet port of the oil pump to the second hydraulic passage, and delivering the thus joined hydraulic oil to a hydraulic oil receiving unit via a hydraulic-oil-delivery passage.

Abstract: A finely structured grooved gate transistor of which the threshold voltage does not decrease in spite of the small size and of which the threshold voltage of the transistor can be adjusted by shape. The shape of a groove corner of the transistor as a semiconductor device is contained in a concentric circle having a radius of curvature r.+-.L/5 (L: channel length) and the radius of curvature r, i.e., the geometric parameter has a relationship with the doping concentration as shown in FIG. 1B. Alternatively, the average (a+b)/2 (geometric parameter) of the sum of the two sides opposite the right angle of a right triangle formed of a straight line in contact with the gate bottom in parallel to the substrate surface of a grooved gate transistor, a perpendicular line to the substrate bottom surface from the source and drain ends at a portion formed with a channel and a straight line in contact with the groove corner has a relationship with the doping concentration as shown in FIG. 1B.

Abstract: A semiconductor memory device where trench capacitors for charge storage are arranged respectively to symmetric positions with respect to a gate electrode of a field effect transistor.Since electrodes of the capacitor are connected to source or drain of the field effect transistor in self alignment, a required area is small and a fabricating method is quite simple in comparison with the prior art.

Abstract: A semiconductor memory wherein a memory cell region having a plurality of memory cells and a relatively high altitude above the surface of semiconductor substrate is formed at a recessed part of the semiconductor substrate having the recessed part and a projected part, and wherein a peripheral circuit region having a comparatively low altitude from the surface of the semiconductor substrate is formed at the projected part of the semiconductor substrate.

Abstract: A vertical semiconductor memory device is provided which capable of miniaturization. More particularly, a memory cell is provided having a trench capacitor and a vertical transistor in a dynamic random access memory suitable for high density integration. An object of this arrangement is to provide a vertical memory cell capable of miniaturization for use in a ultra-high density integration DRAM of a Gbit class. This memory cell is characterized in that each memory cell is covered with an oxide film, an impurity area does not exist on the substrate side, an area in which a channel area is formed is a hollow cylindrical single crystal area, connection of impurity areas as source-drain areas and bit lines and the electrode of a capacitor is made by self-alignment and connection between a word line electrode and a gate electrode is also made by self-alignment.

Abstract: A phenolic novolak resin comprising a compound represented by the general formula [I]: ##STR1## wherein X is H or ##STR2## R is an alkyl group having 1 to 4 carbon atoms, and n is 1 to 10, particularly a phenolic novolak epoxy resin, and material, and a cured substance therefrom, and a process for producing the resin are disclosed. This resin is excellent in heat resistance and in reluctance to absorb water as compared with conventional phenolic resins, and useful in sealing electronic parts, molding, and laminating.

Abstract: A semiconductor memory wherein a memory cell region having a plurality of memory cells and has higher altitude from the surface of semiconductor substrate is formed in the recessed part of semiconductor substrate having the recessed part and projected part and a peripheral circuit region which is comparatively low from the surface of semiconductor substrate is formed to the projected part of semiconductor substrate.

Abstract: An insulator film can be formed at a low temperature without any damage to a substrate to be treated by a plasma in a plasma treatment system which comprises a magnetron for generating a microwave, an isolator for isolating a wave guide from the magnetron, a discharge tube for generating a plasma, the wave guide for leading the microwave from the magnetron to the discharge tube, a vacuum chamber integrally formed together with the discharge tube, an evaporation source provided in the vacuum chamber, a substrate to be treated and provided at a position to sandwich a stream of the plasma between the substrate and the evaporation source, electromagnets provided around the discharge tube and the vacuum chamber, and a manipulator for manipulating the substrate, the electromagnets generating a magnetic field to confine the stream of the plasma.

Abstract: A herbicidal composition which comprises a phenoxyphenoxy unsaturated derivative having the formula: ##STR1## wherein X represents a halogen atom or CF.sub.3 ; Y represents a hydrogen atom or a halogen atom; and Z represents --COOR, --COR", --COOH, --CH.sub.2 OH, or --CH.sub.2 OR"'.

Abstract: A herbicidal composition which comprises a herbicidally effective amount of a phenoxyphenoxy derivative having the formula ##STR1## wherein X represents a halogen atom or CF.sub.3 ; Y represents a hydrogen atom or a halogen atom; and Z represents --COSR.sup.1 and R.sup.1 represents lower alkyl, phenyl, chlorophenyl, chlorobenzyl or methoxybenzyl; in combination with a suitable carrier is disclosed.

Abstract: Thiolcarbamic acid esters having the formula ##STR1## wherein X represents hydrogen or chlorine atom and n represents an integer of 2 to 3 are disclosed.

Abstract: Trifluoromethylphenoxy phenoxy crotonic acid derivatives of the formula ##STR1## wherein X represents hydrogen or halogen atom, and R represents an alkyl, haloalkyl, alkenyl haloalkenyl or alkynyl group are disclosed. These compounds disclose herbicidal activity.

Abstract: A herbicidal composition comprises a bipyridylium salt and a thiocarbamate having the formula ##STR1## wherein R and R.sub.1 each represent a lower alkyl group which in combination with each other can form a heterocyclic ring with the N atom; R.sub.2 represents ##STR2## AND X represents a halogen atom or a lower alkyl group; and n represents 0, 1 or 2.

Abstract: A semiconductor pressure transducer comprises a circular diaphragm formed of a single crystal semiconductor material, at least a first strain gauge element having a piezoresistance effect and formed by injecting an impurity into the diaphragm in a linear region extending in parallel with a predetermined axis which extends transversely of the surface of the diaphragm, at least a second strain gauge element having the piezoresistance effect and formed by injecting an impurity into the diaphragm in a linear region extending in the direction perpendicular to the axis, and means for securing the diaphragm at the outer peripheral portion thereof. The distance between the second strain gauge element and the center of the diaphragm is differed from the distance between the center of the first strain gauge element and the latter.

Abstract: An apparatus for detecting misfire in a multicylinder internal combustion engine, comprising a sound pick-up transducer disposed in the exhaust passage of the engine or a chamber communicating with the exhaust passage for the purpose of detecting exhaust sound, an integrating circuit for integrating an electric output of the transducer in synchronism with the rotation of the engine and a comparison circuit for comparing the output of the integrating circuit with a reference signal, thereby misfire being detected on the basis of an output of the comparison circuit.

Abstract: A herbicidal composition comprises a bipyridylium salt and a thiocarbamate having the formula ##STR1## wherein R and R.sub.1 each represent a lower alkyl group which in combination with each other can form a heterocyclic ring with the N atom; R.sub.2 represents ##STR2## AND X represents a halogen atom or a lower alkyl group; and n represents 0, 1 or 2.

Abstract: A pressure responsive switch performing switching operation for converting pressure variations into electric variations is disclosed in which the actuating pressure of a snap switching member is adjusted by changing the contact pressure between a pressure applied member and the snap switching member which is in contact with the pressure-applied member. The gap between the break contact of the pressure responsive switch is adjusted thereby to adjust the difference between the pressure between the make contact of the switch when it is closed and the pressure between the break contact of the same when it is closed.