Abstract: Provided is a substrate processing apparatus.

Abstract: Provided is a substrate processing apparatus including a process chamber in which a process for processing a substrate are processed, a purge chamber removing contaminants existing on the substrate, and a transfer chamber connected to a side surface of each of the process chamber and the purge chamber, the transfer chamber including a substrate handler transferring the substrate, on which the process is performed, into the purge chamber between the process chamber and the purge chamber, wherein the purge chamber includes a chamber having an inner space and a passage through which the substrate is taken in or out of the inner space, a substrate holder on which the substrate is placed, the substrate holder being disposed in the chamber, a gas supply port disposed on a side surface with respect to the passage to supply a gas toward the inner space, and an exhaust port disposed on a side opposite to the gas supply port to discharge the gas within the inner space.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus in which a process with respect to a substrate is performed includes a main chamber having an opened upper portion, the main chamber having a passage that is defined in a sidewall thereof so that a substrate is accessible, a chamber cover disposed on the opened upper portion of the main chamber to provide a process space, which is sealed from the outside, in which the process is performed, a susceptor plate on which the substrate is placed, the susceptor plate having an inner space with an opened lower portion, and a main heater rotatably disposed in the inner space, the main heater being spaced apart from the susceptor plate to heat the susceptor plate.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus in which a process with respect to a substrate is performed includes a main chamber having an opened upper side, the main chamber including a passage defined in a side thereof so that the substrate is loaded or unloaded through the passage, a susceptor disposed within the main chamber to allow the substrate to be placed thereon, a chamber cover disposed on the opened upper side of the main chamber, the chamber cover including an upper installation space defined above the susceptor and a gas supply passage disposed outside the upper installation space, a heating block disposed in the upper installation space to heat the substrate, and a gas supply port connected to the gas supply passage to supply a process gas into the process space.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus in which a process with respect to a substrate is performed includes a chamber body having an opened upper side, the chamber body including a passage defined in a side thereof so that the substrate is loaded or unloaded through the passage, a chamber cover disposed on the chamber body to cover the opened upper side of the chamber body, the chamber cover providing a process space in which the process with respect to the substrate is performed, a susceptor disposed within the process space to heat the substrate, and a heating block disposed on an upper or lower portion of the passage to preliminarily heat the substrate loaded through the passage.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus in which a process with respect to a substrate is performed includes a main chamber having a passage that is defined in one sidewall thereof to load or unload the substrate and upper and lower openings that are respectively defined in upper and lower portions thereof, a chamber cover closing the upper opening of the main chamber to provide a process space that is blocked from the outside to perform the process, a showerhead disposed in the process space, the showerhead having a plurality of spray holes that spray a process gas, a lower heating block on which the substrate is placed on an upper portion thereof, the lower heating block being fixed to the lower opening and having a lower installation space separated from the process space, and a plurality of lower heaters disposed in the lower installation space in a direction parallel to the substrate to heat the lower heating block.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber having an opened upper side, the chamber having a passage, through which a substrate is accessible, in a side thereof, a chamber cover covering the opened upper side of the chamber to provide an inner space in which a process with respect to the substrate is performed, the chamber cover having a gas supply hole passing through a ceiling wall thereof, an upper antenna disposed on an upper central portion of the chamber cover to generate an electric field in a central portion of the inner space, the upper antenna generating plasma by using a source gas supplied into the inner space, a side antenna disposed to surround a side portion of the chamber cover to generate an electric field in an edge portion of the inner space, the side antenna generating plasma by using the source gas supplied into the inner space, and a gas supply tube connected to the gas supply hole to supply the source gas into the inner space.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber providing an inner space in which a process with respect to a substrate is performed, a heating plate on which the substrate is placed, the heating plate being fixedly disposed within the chamber, a heater spaced from a lower portion of the heating plate to heat the heating plate, and a lift module lifting the heater.

Abstract: Provided is a substrate processing apparatus.

Abstract: Provided is a substrate processing apparatus.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus in which a process with respect to substrates is performed includes a lower chamber having an opened upper portion, the lower chamber having a passage, through which the substrates are accessible, in a side thereof, an external reaction tube closing the opened upper portion of the lower chamber to provide a process space in which the process is performed, a substrate holder on which the one or more substrates are vertically stacked, the substrate holder being movable between a stacking position at which the substrates are stacked within the substrate holder and a process position at which the process with respect to the substrates is performed, a gas supply unit supplying a reaction gas into the process space, and a processing unit disposed outside the external reaction tube to activate the reaction gas, thereby performing the process with respect to the substrates.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus in which processes with respect to substrates are performed includes a lower chamber having an opened upper side, the lower chamber including a passage allowing the substrates to pass therethrough in a side thereof, an external reaction tube closing the opened upper side of the lower chamber to provide a process space in which the processes are performed, a substrate holder on which the one ore more substrates are vertically stacked, the substrate holder being movable between a stacking position in which the substrates are stacked within the substrate holder and a process position in which the processes with respect to the substrates are performed, and a gas supply unit disposed inside the external reaction tube to supply a reaction gas into the process space, the gas supply unit forming a flow of the reaction gas having different phase differences in a vertical direction.

Abstract: Provided is a substrate processing module. The substrate processing module includes a lower chamber having an opened upper portion, the lower chamber having a passage, through which a substrate is accessible, in a side thereof, a plurality of susceptors on which the substrate is placed on each of top surfaces thereof, the plurality of susceptors being disposed within the lower chamber and fixedly disposed around a preset center of the lower chamber, a rotation member disposed on the preset center of the lower chamber, the rotation member being rotatable with respect to the preset center, a plurality of holders connected to the rotation member and rotated together with the rotation member, the plurality of holders having at least one seat surface on which the substrate is placed, and a driving module connected to the rotation member, the driving module moving one of the holders to a transfer position corresponding to the passage by driving the rotation member.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber body having an opened upper side, the chamber body providing an inner space in which a process with respect to a substrate is performed, a chamber lid disposed on an upper portion of the chamber body to close the opened upper side of the chamber body, and a showerhead disposed on a lower portion of the chamber lid to supply a process gas toward the inner space. The chamber body includes at least one convergent port disposed along the inside of a sidewall of the chamber body to allow the process gas within the inner space to converge, a plurality of inner exhaust holes defined in along the sidewall of the chamber body to communicate with the convergent port and the inner space, and a plurality of inner exhaust ports connected to the convergent port.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber body having an opened upper side, the chamber body providing an inner space in which processes with respect to a substrate are performed, a chamber lid disposed on an upper portion of the chamber body to close the opened upper side of the chamber body, and a showerhead disposed on a lower portion of the chamber lid to supply a reaction gas into the inner space. The showerhead includes a flange contacting the chamber lid, the flange having a passage recessed from a top surface of the flange to allow a refrigerant to flow therein, and a flat plate disposed inside the flange, the flat plate having at least one injection hole for injecting the reaction gas in a thickness direction thereof.

Abstract: Provided is a substrate processing apparatus.

Abstract: Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a process chamber (10) providing an internal space, in which a process is carried out onto a substrate; a support member (30) installed in the process chamber (10) to support the substrate; and a shower head (20) located above the support member (30) to supply a source gas toward the support member (30), wherein the shower head (20) includes a first injection surface (24) located at a position separated from the upper surface of the substrate by a first distance, and provided with outlets of first injection holes (24a) to inject the source gas; and a second injection surface (26) located at a position separated from the upper surface of the substrate by a second distance being different from the first distance, and provided with outlets of second injection holes (26a) to inject the source gas.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber where processes with respect to a substrate are carried out, a substrate support on which the substrate is placed, the substrate support being disposed within the chamber, and a showerhead in which an inlet for supplying reaction gas into the chamber and an outlet for discharging the reaction gas supplied into the chamber are symmetrically disposed. The reaction gas flows within the chamber in a direction roughly parallel to that of the substrate.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber where processes with respect to a substrate are carried out, a substrate support on which the substrate is placed, the substrate support being disposed within the chamber, and an antenna disposed in an upper portion of the chamber to form an electric field within the chamber. The antenna includes a first antenna and a second antenna, which are disposed in rotational symmetry with respect to a preset center. The first antenna includes a first inner antenna and a first intermediate antenna which respectively have semi-circular shapes and first and second radii and are respectively disposed on one side and the other side with respect to the preset center line and a first connection antenna connecting the first inner antenna to the first intermediate antenna.

Abstract: According to one embodiment of the present invention, a substrate-processing apparatus includes: first and second chambers parallel to each other; a plurality of first lift pins disposed in the first chamber, and supporting a first substrate transferred to the first chamber; a plurality of second lift pins disposed in the second chamber, and supporting a second substrate transferred into the second chamber; and a transfer robot transferring the first and second substrates into the first and second chambers. The transfer robot includes first and second blades that simultaneously elevate to transfer the first and second substrates to the upper sides of the first and second lift pins, respectively.