Abstract: Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a chamber (10) providing an internal space, in which a process is carried out onto a substrate; a gas supply unit (40) supplying a source gas to the internal space; a coil (16) generating an electric field in the internal space to generate plasma from the source gas; and an adjustment ring (50) disposed on a flow path of the plasma toward a support member to adjust the flow of the plasma. The chamber (10) includes a process chamber (12), in which the support member is provided and the process is carried out by the plasma; and a generation chamber (14), in which the plasma is generated by the coil (16), provided on the upper surface of the process chamber (12), and the adjustment ring (50) is installed at the lower end of the generation chamber (14).

Abstract: According to one embodiment of the present invention, a plasma treatment apparatus comprises: a chamber having an inner space in which processes for an object to be treated are performed; and an antenna which is arranged to cover the side part of the chamber, and which forms electric fields in said inner space to generate plasma from the source gas supplied in the inner space. The antenna includes a helical antenna which is formed into a helical shape from one side of the chamber toward the other side of the chamber along a first rotation direction, and which has a current flowing in the first rotation direction; an extension antenna which is connected to one end of the helical antenna positioned at said one side of the chamber, and which has a current flowing in the direction opposite to the first rotation direction; and a connection antenna for interconnecting the extension antenna and the helical antenna.

Abstract: Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a process chamber (10) providing an internal space, in which a process is carried out onto a substrate; a support member (30) installed in the process chamber (10) to support the substrate; and a shower head (20) located above the support member (30) to supply a source gas toward the support member (30), wherein the shower head (20) includes a first injection surface (24) located at a position separated from the upper surface of the substrate by a first distance, and provided with outlets of first injection holes (24a) to inject the source gas; and a second injection surface (26) located at a position separated from the upper surface of the substrate by a second distance being different from the first distance, and provided with outlets of second injection holes (26a) to inject the source gas.

Abstract: Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a chamber (10) providing an internal space, in which a process is carried out onto a substrate; a gas supply unit (40) supplying a source gas to the internal space; a coil (16) generating an electric field in the internal space to generate plasma from the source gas; and an adjustment ring (50) disposed on a flow path of the plasma toward a support member to adjust the flow of the plasma. The chamber (10) includes a process chamber (12), in which the support member is provided and the process is carried out by the plasma; and a generation chamber (14), in which the plasma is generated by the coil (16), provided on the upper surface of the process chamber (12), and the adjustment ring (50) is installed at the lower end of the generation chamber (14).

Abstract: A substrate processing apparatus includes a chamber defining a process space where a process is carried out with respect to a substrate, a first supply member configured to supply a first source gas toward the process space, a plasma source configured to generate an electric field in the process space to create radicals from the first source gas, and a second supply member located below the first supply member for supplying a second source gas toward the substrate. A support member is installed in the chamber. The second supply member has a supply nozzle disposed, such that a lower end of the supply nozzle corresponds to a center of the substrate placed on the support member, for supplying the second source gas toward the center of the substrate.

Abstract: A substrate processing apparatus includes a chamber defining a creation space where radicals are created and a process space where a process is carried out with respect to a substrate, a first supply member configured to supply a first source gas into the creation space, an upper plasma source configured to generate an electric field in the creation space to create the radicals from the first source gas, a second supply member configured to supply a second source gas into the process space, and a lower plasma source configured to generate an electric field in the process space. The upper plasma source includes a first segment and a second segment configured to wrap a side of the chamber. The first and second segments are alternately disposed in the vertical direction of the chamber.

Abstract: A substrate processing apparatus includes a chamber defining a process space where a process is carried out with respect to a substrate, a first supply member located above the process space for supplying a first source gas toward the process space, a plasma source configured to generate an electric field in the process space to create radicals from the first source gas, and a second supply member configured to supply a second source gas above the substrate. The chamber includes a lower chamber in which a support member configured to allow the substrate to be placed thereon is installed. The lower chamber is open at a top thereof. The second supply member is installed at an upper end of the lower chamber for supplying the second source gas in a direction generally parallel to the substrate placed on the support member. The second source gas may be a silicon-containing gas.

Abstract: Disclosed are a substrate supporting unit, a substrate processing apparatus, and a method of manufacturing the substrate supporting unit. The substrate supporting unit includes a susceptor (12) provided with heaters (15a, 16b) to heat a substrate placed on the susceptor (12), and including a first temperature region and a second temperature region having a higher temperature than that of the first temperature region; and a heat dissipating member (20) including a contact surface (21) being in thermal contact with the second temperature region. The heat dissipating member (20) further includes an opening (23) corresponding to the first temperature region. The heat dissipating member (20) formed in a ring shape, in which the opening (23) is surrounded with the contact surface (21), and the contact surface (21) of the heat dissipating member (20) makes thermal contact with the lower surface of the susceptor (12).

Abstract: A plasma processing apparatus includes a chamber providing an interior space where a process is performed upon a target; and a plasma generating unit generating an electric field in the interior space to generate plasma from a source gas supplied to the interior space. The plasma generating unit includes an upper source disposed substantially parallel to an upper surface of the chamber, an upper generator connected to the upper source to supply a first current to the upper source, a lateral source surrounding a lateral side of the chamber, and a lateral generator connected to the lateral source to supply a second current to the lateral source. The plasma generating unit further includes an upper matcher disposed between the upper generator and the upper source, and a lower matcher disposed between the lateral generator and the lateral source.

Abstract: A plasma processing apparatus includes a chamber to provide an inner area in which a process is performed upon an object, and a plasma source to generate an electric field in the inner area and thereby to generate plasma from a source gas supplied in the inner area, wherein the plasma source comprises a top source provided in the top of the chamber, and a side source encompassing the side of the chamber and allowing current to flow from the one side of the chamber to the other side thereof.