Abstract: A method of encoding/decoding a speech signal and a device for performing the same are provided. The method includes outputting, based on a first input speech signal of a previous timepoint and a second input speech signal of a current timepoint, a predicted signal that predicts the second input speech signal from the first input speech signal and obtaining, based on the second input speech signal and the predicted signal, a residual signal by removing a correlation between the first input speech signal and the second input speech signal from the second input speech signal.

Abstract: A semiconductor device and an electronic system are provided. The semiconductor device may include a substrate including a cell array region and a connection region, a stacked structure including conductive patterns stacked on the substrate, an inner supporter that extends into the stacked structure in the connection region, a contact plug that extends into a portion of the stacked structure and electrically connected to one of the conductive patterns and at least partially extends around the inner supporter in plan view, an insulating spacer between the contact plug and the stacked structure and at least partially extends around the contact plug, and outer supporters spaced apart from the contact plug in the connection region and extending into the stacked structure.

Abstract: A slurry supply device includes a slurry tank for storing slurry; a temperature controller for supplying hot or cold water to the slurry tank to control the temperature of the slurry; and a double pipe for supplying the slurry to the slurry tank while being connected to the slurry tank and for allowing hot or cold water to move to control the temperature of the slurry.

Abstract: An exemplary semiconductor device can comprise (a) a substrate comprising a substrate dielectric structure between the substrate top side and the substrate bottom side, conductive pads at the substrate bottom side, and a substrate cavity through the substrate dielectric structure, (b) a base electronic component comprising inner short bumps; outer short bumps bounding a perimeter around the inner short bumps, and tall bumps between the outer short bumps and an edge of the base component top side, and (c) a mounted electronic component coupled to the inner short bumps of the base electronic component. The tall bumps of the base component can be coupled to the conductive pads of the substrate. The mounted electronic component can be located in the substrate cavity. The substrate bottom side can cover at least a portion of the outer short bumps of the base electronic component. Other examples and related methods are disclosed herein.

Abstract: A method and apparatus for encoding/decoding audio signal are provided. The encoding method includes transforming an input audio signal in a time domain into an audio signal in a frequency domain, quantizing energy of a frequency band of the audio signal in the frequency domain, generating a normal signal by normalizing the audio signal in the frequency domain according to quantized energy, obtaining a feature vector including information on the energy of the frequency band based on the normal signal and the input audio signal, quantizing the feature vector, obtaining a scale factor used to scale the normal signal based on the quantized feature vector, quantizing an adjustment signal into which the normal signal has been scaled based on the scale factor, and outputting bitstreams based on the quantized energy, the quantized feature vector, and the quantized adjustment signal.

Abstract: The present application provides a verification method and system of a sample introduction device dedicated to gas chromatography for precisely measuring a concentration of atmospheric greenhouse gas. The verification method of a sample introduction device dedicated to gas chromatography for precisely measuring a concentration of atmospheric greenhouse gas includes the steps of: 1) calculating, by a bias size calculation unit, a degree of bias in a tedlar bag using a correlation between a bias of Pbag to Pcyl and a bias of xbag to xcyl; and 2) determining, by a device performance determination unit, a device having the smallest value of a size of the bias calculated from the bias size calculation unit as an optimal device.

Abstract: The present invention relates to an electrolyte for batteries and a secondary battery. The present invention has an effect of providing a secondary battery having improved charging efficiency and output due to reduced charging resistance and having excellent long-term lifespan and high-temperature capacity retention rate.

Abstract: The present invention relates to a radiation detection device and a method for manufacturing same. The radiation detection device of the present invention comprises: at least one bottom electrode and at least one top electrode disposed spaced apart from each other; and a semiconductor substrate disposed between the bottom electrode and the top electrode, wherein the upper end of the semiconductor substrate includes at least one active layer region, and the active layer region is filled with a nanocomposite including zero-dimensional nanoparticles, conductive polymers, and one-dimensional or two-dimensional conductive nanomaterials.

Abstract: According to an embodiment, a monitoring device, comprising: a sensor for sensing inflow gas information including a component and a concentration of an inflow gas introduced into a regenerative thermal oxidizer (RTO); and a processor for determining residual gas information including a component and a concentration of a residual gas in the RTO by using the inflow gas information, and updating an inflow amount per unit time of the inflow gas according to a risk level of the RTO determined based on the residual gas information, is provided.

Abstract: A slurry composition may include an abrasive, a solvent, and polyol. The abrasive may include any one of metal oxide, metal nitride, metal oxynitride, and a combination thereof. The polyol may have about 0.01 mM to about 500 mM of a concentration. Thus, high polishing selectivities may be provided between a B—Si layer, a TiN layer and a SiN layer by controlling a polishing rate of the TIN layer.

Abstract: A cold water tank for a direct water purifier is provided.

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: A system for depositing a material is provided. The system includes a die for extruding the material along a principal deposition direction through an opening of the die. The die includes a cavity fluidly connected to the opening, and a flow guide extending through the cavity towards the opening for shaping a flow of the material extruded via the opening and flowing past a side of the flow guide in the cavity. The side of the flow guide comprises a widening side portion of which a width of the widening side portion increases along the principal deposition direction towards the opening.

Abstract: Disclosed are a deep learning model optimization method and apparatus for medical image segmentation. A deep learning model optimization method for medical image segmentation includes: (a) initializing a model parameter; (b) updating the model parameter by performing model-agnostic meta learning (MAML) on a model based on sample batch and applying a gradient descent algorithm to a loss function; (c) setting an optimizer parameter as the updated model parameter, performing one-shot meta-learning on the model, and then updating the optimizer parameter by applying the gradient descent algorithm to the loss function; and (d) updating the model parameter by reflecting the updated optimizer parameter.

Abstract: An integrated circuit device includes a conductive region on a substrate and a lower electrode structure including a main electrode part spaced apart from the conductive region and a bridge electrode part between the main electrode part and the conductive region. A dielectric layer contacts an outer sidewall of the main electrode part. To manufacture the integrated circuit device, a preliminary bridge electrode layer is formed in a hole of a mold pattern on the substrate, and the main electrode part is formed on the preliminary bridge electrode layer in the hole. The mold pattern is removed to expose a sidewall of the preliminary bridge electrode layer, and a portion of the preliminary electrode part is removed to form the bridge electrode part. The dielectric layer is formed to contact the outer sidewall of the main electrode part.

Abstract: A semiconductor memory includes metallic lines on a substrate and including an uppermost metallic line, a semiconductor conduction line on the uppermost metallic line, a vertical structure penetrating the semiconductor conduction line and metallic lines, and including a vertical structure that includes an upper channel film, a first lower channel film, and an upper connection channel film connecting the upper channel film and the first lower channel film between a bottom of the semiconductor conduction line and a bottom of the uppermost metallic line, and a first cutting line through the metallic lines and the semiconductor conduction line, and including a first upper cutting line through the semiconductor conduction line, and a first lower cutting line through the plurality of metallic lines, a width of the first upper cutting line being greater than a width of an extension line of a sidewall of the first lower cutting line.

Abstract: An apparatus for providing a vehicle sound includes a communicator configured to communicates with an electronic device, a detector configured to detect driver's driving pattern information and road driving condition information of a vehicle, and a controller coupled to the communicator and the detector. The controller is configured to obtain music information from the electronic device and calculate a music emotional quotient (EQ) index based on the music information, the driver's driving pattern information, and the road driving condition information. The controller is also configured to select a game sound type based on the music EQ index, and provide an emotional sound matched with the game sound type.

Abstract: An integrated circuit device includes a conductive region on a substrate and a lower electrode structure including a main electrode part spaced apart from the conductive region and a bridge electrode part between the main electrode part and the conductive region. A dielectric layer contacts an outer sidewall of the main electrode part. To manufacture the integrated circuit device, a preliminary bridge electrode layer is formed in a hole of a mold pattern on the substrate, and the main electrode part is formed on the preliminary bridge electrode layer in the hole. The mold pattern is removed to expose a sidewall of the preliminary bridge electrode layer, and a portion of the preliminary electrode part is removed to form the bridge electrode part. The dielectric layer is formed to contact the outer sidewall of the main electrode part.

Abstract: A display device includes: a base substrate; a first pixel electrode, a second pixel electrode, and a third pixel electrode arranged on the base substrate to be spaced apart from each other; a pixel defining film on the first pixel electrode, the second pixel electrode, and the third pixel electrode and including a first opening exposing the first pixel electrode, a second opening exposing the second pixel electrode and spaced apart from the first opening, and a third opening exposing the third pixel electrode and spaced apart from the first opening and the second opening; a first organic layer on the first pixel electrode exposed by the first opening; a second organic layer on the second pixel electrode exposed by the second opening; and a third organic layer on the third pixel electrode exposed by the third opening.

Abstract: A semiconductor memory device includes a lower stacked structure with lower metal lines on a substrate, an upper stacked structure with an upper metal line on the lower stacked structure, a vertical structure penetrating the upper and lower stacked structures and including a channel layer, a first cutting line through the upper and lower stacked structures, an upper supporter in a recess on the first cutting line, a second cutting line through the upper and lower stacked structures and spaced apart from the first cutting line, a sub-cutting line through the upper stacked structure while at least partially overlapping the vertical structure in the vertical direction, the sub-cutting line being between the first and second cutting lines, top surfaces of the upper supporter and sub-cutting line being coplanar, and a first interlayer insulating layer surrounding a sidewall of each of the upper supporter and the sub-cutting line.