Patents by Inventor In Goo Kang

In Goo Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12251730
    Abstract: Disclosed is a flexible tactile actuator including a tactile transmitter configured to be flexible and including magnetic particles capable of being polarized in response to an external magnetic field and a matrix layer including the magnetic particles, a magnetic field generator disposed below the tactile transmitter and configured to generate a magnetic field in the tactile transmitter, and an elastic member provided in a shape of a film, having at least a portion in surface contact with the magnetic field generator, and attached to be in surface contact with one of a top surface and a bottom surface of the tactile transmitter.
    Type: Grant
    Filed: October 19, 2022
    Date of Patent: March 18, 2025
    Assignee: CK MATERIALS LAB CO., LTD.
    Inventors: Hyeong Jun Kim, Myung Sun Park, Jong Hun Lee, Ji Goo Kang, Nam Seok Kim
  • Publication number: 20250084196
    Abstract: An aspect of the present invention is to provide a fluorine-based polymer showing a significantly low dielectric constant of less than 1.8 and a fluorine-based polymer composition including the same. The fluorine-based polymer provided in an aspect of the present invention shows a very low dielectric constant, wherein the polymer is not only a pollution-reducing material generating no harmful substance, but may also be utilized as a coating material in various fields due to high adhesiveness. Furthermore, a polymer film employing the polymer as a material has a volume resistance of about 5.8×1015 Ohmcm, showing an excellent resistance value as an insulating material.
    Type: Application
    Filed: July 4, 2022
    Publication date: March 13, 2025
    Inventors: Eun-Ho SOHN, Won Wook SO, In Joon PARK, Bong Jun CHANG, Hong Suk KANG, Ju Hyeon KIM, Ji Hoon BAIK, Sang Goo LEE, Hyeon Jun HEO, Shin Hong YOOK, Dong Je HAN, Ji Young LEE
  • Patent number: 12248662
    Abstract: A user terminal device and a displaying method thereof are provided.
    Type: Grant
    Filed: October 13, 2023
    Date of Patent: March 11, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong-Goo Kang, Yun-kyung Kim, Yong-yeon Lee, Ji-yeon Kwak, Yeo-jun Yoon
  • Publication number: 20250079135
    Abstract: A deposition apparatus including: a base substrate; an electrostatic chuck on the base substrate; and a plate on the electrostatic chuck. The plate has a first area in which first magnet units are arranged and a second area in which second magnet units are arranged. The first magnet units are spaced apart from each other at a first distance, and the second magnet units are spaced apart from each other at a second distance. The second distance is greater than the first distance.
    Type: Application
    Filed: June 10, 2024
    Publication date: March 6, 2025
    Inventors: Jun Hyeuk KO, Jong Bum KIM, Young Kwang LEE, Min Goo KANG, Suk Ha RYU, Min Chul SONG, Min A WOO
  • Publication number: 20250069804
    Abstract: A multilayer electronic component includes a body including a capacitance forming portion including a dielectric layer and an internal electrode, alternately arranged in a first direction, and a cover portion disposed on both surfaces of the capacitance forming portion opposing the first direction; and an external electrode disposed outside the body and connected to the internal electrode, wherein the cover portion includes a first dielectric material having a perovskite structure represented by the formula ABO3, and a first metal including one or more of Cu, W, Ag, and Zn, and wherein, in at least a portion of the cover portion, an amount of the first metal is 2.0 mole or more and 9.0 mole or less, based on 100 mole of an element of B.
    Type: Application
    Filed: May 22, 2024
    Publication date: February 27, 2025
    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Han Sol YUN, Sung Hyung KANG, Ji Won KIM, Min Goo KANG
  • Patent number: 12234310
    Abstract: Disclosed is a blood-compatible polymer represented by Formula 1. A polymer obtained by grafting a fluorinated methacrylate onto a polyvinylidene fluoride copolymer and provided in one aspect of the present invention is a polymer with blood compatibility, and may provide a blood-compatible material with hydrophobicity. In addition, it is possible to provide a material with controlled contact angle and surface energy properties by controlling the hydrogen fluoride length of the fluorinated methacrylate monomer for modification. Furthermore, it is possible to provide coating with controlled surface properties and blood compatibility through a simple process. Furthermore, it is possible to provide a freestanding polymer film with blood compatibility.
    Type: Grant
    Filed: June 18, 2021
    Date of Patent: February 25, 2025
    Assignee: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOG
    Inventors: Eun Ho Sohn, Dong Je Han, Hyeon Jun Heo, Jeong Kim, In Joon Park, Jong Wook Ha, Soo Bok Lee, Hong Suk Kang, Sang Goo Lee, Shin Hong Yook
  • Patent number: 12229388
    Abstract: A user terminal device and a controlling method thereof are provided. The user terminal device includes a display configured to be divided into a first area and a second area which is larger than the first area with reference to a folding line, a cover disposed on a rear side of the display, a detector configured to detect a user interaction on the display and the cover, and a controller configured to, in response to the display being folded along the folding line such that the first area and the second area face each other, control the detector to detect a user interaction through an exposure area, which is an exposed part of the second area, and the cover, and, in response to the display being folded such that the two parts of the cover face with each other with reference to the folding line, control the detector to detect a user interaction through the first area and the second area.
    Type: Grant
    Filed: November 30, 2023
    Date of Patent: February 18, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong-goo Kang, Yun-kyung Kim, Yong-yeon Lee, Ji-yeon Kwak, Hyun-jin Kim
  • Patent number: 12205605
    Abstract: An audio signal encoding and decoding method using a neural network model, and an encoder and decoder for performing the same are disclosed. A method of encoding an audio signal using a neural network model, the method may include identifying an input signal, generating a quantized latent vector by inputting the input signal into a neural network model encoding the input signal, and generating a bitstream corresponding to the quantized latent vector, wherein the neural network model may include i) a feature extraction layer generating a latent vector by extracting a feature of the input signal, ii) a plurality of downsampling blocks downsampling the latent vector, and iii) a plurality of quantization blocks performing quantization of a downsampled latent vector.
    Type: Grant
    Filed: February 11, 2022
    Date of Patent: January 21, 2025
    Assignees: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
    Inventors: Inseon Jang, Seung Kwon Beack, Jongmo Sung, Tae Jin Lee, Woo-Taek Lim, Hong-Goo Kang, Jihyun Lee, Chanwoo Lee, Hyungseob Lim
  • Patent number: 12200936
    Abstract: A semiconductor memory device includes; a lower stacked structure including lower metallic lines stacked in a first direction on a substrate, an upper stacked structure including a first upper metallic line and a second upper metallic line sequentially stacked on the lower stacked structure, a vertical structure penetrating the upper stacked structure and lower stacked structure and including a channel film, a connection pad disposed on the vertical structure, contacted with the channel film and doped with N-type impurities, a first cutting line cutting the lower metallic lines, the first upper metallic line and the second upper metallic line, a second cutting line spaced apart from the first cutting line in a second direction different from the first direction, and cutting the lower metallic lines, the first upper metallic line and the second upper metallic line, and sub-cutting lines cutting the first upper metallic line and the second upper metallic line between the first cutting line and the second cuttin
    Type: Grant
    Filed: October 23, 2023
    Date of Patent: January 14, 2025
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kohji Kanamori, Jee Hoon Han, Seo-Goo Kang, Hyo Joon Ryu
  • Publication number: 20250011939
    Abstract: The present invention provides an anodic oxidation film structure and a manufacturing method therefor, the anodic oxidation film structure comprising: a body made of an anodic oxidization film obtained by anodic oxidation on a parent metal and then removing the parent metal; a through-hole which is formed through the body and has a larger inner width than that of a pore formed during the anodic oxidation; and a metal layer provided on the inner wall of the through-hole, and thus improving the mechanical and/or electrical characteristics of the inner wall of the through-hole.
    Type: Application
    Filed: November 21, 2022
    Publication date: January 9, 2025
    Applicant: POINT ENGINEERING CO., LTD.
    Inventors: Bum Mo AHN, Young Heum EOM, Shin Goo KANG
  • Publication number: 20250006210
    Abstract: A method of encoding/decoding a speech signal and a device for performing the same are provided. The method includes outputting, based on a first input speech signal of a previous timepoint and a second input speech signal of a current timepoint, a predicted signal that predicts the second input speech signal from the first input speech signal and obtaining, based on the second input speech signal and the predicted signal, a residual signal by removing a correlation between the first input speech signal and the second input speech signal from the second input speech signal.
    Type: Application
    Filed: June 18, 2024
    Publication date: January 2, 2025
    Applicants: Electronics and Telecommunications Research Institute, UIF (University Industry Foundation), Yonsei University
    Inventors: Woo-taek LIM, Inseon JANG, Seung Kwon BEACK, Hong-Goo KANG, Byeong Hyeon KIM, Jihyun LEE, Hyungseob LIM
  • Publication number: 20240422983
    Abstract: A semiconductor device and an electronic system are provided. The semiconductor device may include a substrate including a cell array region and a connection region, a stacked structure including conductive patterns stacked on the substrate, an inner supporter that extends into the stacked structure in the connection region, a contact plug that extends into a portion of the stacked structure and electrically connected to one of the conductive patterns and at least partially extends around the inner supporter in plan view, an insulating spacer between the contact plug and the stacked structure and at least partially extends around the contact plug, and outer supporters spaced apart from the contact plug in the connection region and extending into the stacked structure.
    Type: Application
    Filed: January 4, 2024
    Publication date: December 19, 2024
    Inventors: Kohji Kanamori, Seo-Goo Kang, Seunghyun Lee, Jeehoon Han
  • Publication number: 20240371383
    Abstract: A method and apparatus for encoding/decoding audio signal are provided. The encoding method includes transforming an input audio signal in a time domain into an audio signal in a frequency domain, quantizing energy of a frequency band of the audio signal in the frequency domain, generating a normal signal by normalizing the audio signal in the frequency domain according to quantized energy, obtaining a feature vector including information on the energy of the frequency band based on the normal signal and the input audio signal, quantizing the feature vector, obtaining a scale factor used to scale the normal signal based on the quantized feature vector, quantizing an adjustment signal into which the normal signal has been scaled based on the scale factor, and outputting bitstreams based on the quantized energy, the quantized feature vector, and the quantized adjustment signal.
    Type: Application
    Filed: May 2, 2024
    Publication date: November 7, 2024
    Applicants: Electronics and Telecommunications Research Institute, UIF (University Industry Foundation), Yonsei University
    Inventors: Inseon JANG, Seung Kwon BEACK, Jongmo SUNG, Tae Jin LEE, Woo-taek LIM, Byeongho CHO, Hong-Goo KANG, Byeong Hyeon KIM, Jihyun LEE, Hyungseob LIM
  • Publication number: 20240353382
    Abstract: The present application provides a verification method and system of a sample introduction device dedicated to gas chromatography for precisely measuring a concentration of atmospheric greenhouse gas. The verification method of a sample introduction device dedicated to gas chromatography for precisely measuring a concentration of atmospheric greenhouse gas includes the steps of: 1) calculating, by a bias size calculation unit, a degree of bias in a tedlar bag using a correlation between a bias of Pbag to Pcyl and a bias of xbag to xcyl; and 2) determining, by a device performance determination unit, a device having the smallest value of a size of the bias calculated from the bias size calculation unit as an optimal device.
    Type: Application
    Filed: April 22, 2023
    Publication date: October 24, 2024
    Inventor: Nam Goo KANG
  • Publication number: 20240315064
    Abstract: The present invention relates to a radiation detection device and a method for manufacturing same. The radiation detection device of the present invention comprises: at least one bottom electrode and at least one top electrode disposed spaced apart from each other; and a semiconductor substrate disposed between the bottom electrode and the top electrode, wherein the upper end of the semiconductor substrate includes at least one active layer region, and the active layer region is filled with a nanocomposite including zero-dimensional nanoparticles, conductive polymers, and one-dimensional or two-dimensional conductive nanomaterials.
    Type: Application
    Filed: June 30, 2022
    Publication date: September 19, 2024
    Inventors: Su Jin KIM, Chang Goo KANG, Jeongmin PARK, Young Soo KIM, Han Soo KIM, Hyojeong CHOI, Byeong Hyeok KIM, Jang Ho HA
  • Publication number: 20240271006
    Abstract: A slurry composition may include an abrasive, a solvent, and polyol. The abrasive may include any one of metal oxide, metal nitride, metal oxynitride, and a combination thereof. The polyol may have about 0.01 mM to about 500 mM of a concentration. Thus, high polishing selectivities may be provided between a B—Si layer, a TiN layer and a SiN layer by controlling a polishing rate of the TIN layer.
    Type: Application
    Filed: August 31, 2023
    Publication date: August 15, 2024
    Inventors: Cheol Min Shin, Hyun Goo Kang, Ungyu Paik, Taeseup Song, Hojin Jeong
  • Publication number: 20240258182
    Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.
    Type: Application
    Filed: April 12, 2024
    Publication date: August 1, 2024
    Applicant: Amkor Technology Singapore Holding Pte. Ltd.
    Inventors: Gyu Wan Han, Won Bae Bang, Ju Hyung Lee, Min Hwa Chang, Dong Joo Park, Jin Young Khim, Jae Yun Kim, Se Hwan Hong, Seung Jae Yu, Shaun Bowers, Gi Tae Lim, Byoung Woo Cho, Myung Jea Choi, Seul Bee Lee, Sang Goo Kang, Kyung Rok Park
  • Publication number: 20240249416
    Abstract: Disclosed are a deep learning model optimization method and apparatus for medical image segmentation. A deep learning model optimization method for medical image segmentation includes: (a) initializing a model parameter; (b) updating the model parameter by performing model-agnostic meta learning (MAML) on a model based on sample batch and applying a gradient descent algorithm to a loss function; (c) setting an optimizer parameter as the updated model parameter, performing one-shot meta-learning on the model, and then updating the optimizer parameter by applying the gradient descent algorithm to the loss function; and (d) updating the model parameter by reflecting the updated optimizer parameter.
    Type: Application
    Filed: December 28, 2023
    Publication date: July 25, 2024
    Inventors: Joon Ki PAIK, Yeong Joon KIM, Dong Goo KANG, Yeong Heon MOK, Sun Kyu KWON
  • Publication number: 20240234485
    Abstract: An integrated circuit device includes a conductive region on a substrate and a lower electrode structure including a main electrode part spaced apart from the conductive region and a bridge electrode part between the main electrode part and the conductive region. A dielectric layer contacts an outer sidewall of the main electrode part. To manufacture the integrated circuit device, a preliminary bridge electrode layer is formed in a hole of a mold pattern on the substrate, and the main electrode part is formed on the preliminary bridge electrode layer in the hole. The mold pattern is removed to expose a sidewall of the preliminary bridge electrode layer, and a portion of the preliminary electrode part is removed to form the bridge electrode part. The dielectric layer is formed to contact the outer sidewall of the main electrode part.
    Type: Application
    Filed: March 25, 2024
    Publication date: July 11, 2024
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jun-goo KANG, Hyun-suk LEE, Gi-hee CHO
  • Publication number: 20240224525
    Abstract: A semiconductor memory includes metallic lines on a substrate and including an uppermost metallic line, a semiconductor conduction line on the uppermost metallic line, a vertical structure penetrating the semiconductor conduction line and metallic lines, and including a vertical structure that includes an upper channel film, a first lower channel film, and an upper connection channel film connecting the upper channel film and the first lower channel film between a bottom of the semiconductor conduction line and a bottom of the uppermost metallic line, and a first cutting line through the metallic lines and the semiconductor conduction line, and including a first upper cutting line through the semiconductor conduction line, and a first lower cutting line through the plurality of metallic lines, a width of the first upper cutting line being greater than a width of an extension line of a sidewall of the first lower cutting line.
    Type: Application
    Filed: March 18, 2024
    Publication date: July 4, 2024
    Inventors: Hyo Joon Ryu, Young Hwan Son, Seo-Goo Kang, Jung Hoon Jun, Kohji Kanamori, Jee Hoon Han