Abstract: A semiconductor device includes a substrate, first and second supporter patterns stacked sequentially on the substrate in a first direction and spaced apart from an upper surface of the substrate, a lower electrode hole that extends through the first and second supporter patterns on the substrate in the first direction, an interface film on side walls and a bottom surface of the lower electrode hole, a lower electrode inside of the lower electrode hole on the interface film, a capacitor dielectric film that is in physical contact with side walls of the interface film, an uppermost surface of the interface film, and an uppermost surface of the lower electrode, the uppermost surface of the interface film is formed on a same plane as an upper surface of the second supporter pattern.

Abstract: A user terminal device and a displaying method thereof are provided.

Abstract: An adhesive composition and a surface protective film using the same are provided. The adhesive composition comprises a urethane resin containing a hydroxyl group; an isocyanate-based curing agent; a (meth)acrylate copolymer of a monomer mixture including a (meth)acrylate monomer containing a hydroxyl group, a (meth)acrylate monomer containing a fluorine based substituent, an alkyl (meth)acrylate monomer having an alkyl group of 1 to 10 carbon atoms and an alkyl (meth)acrylate monomer having an alkyl group of 12 to 22 carbon atoms; and an antistatic agent.

Abstract: An all-solid-state battery includes a electrode assembly including a laminate comprising a solid electrolyte layer, and a negative electrode layer and a positive electrode layer stacked with the solid electrolyte layer interposed therebetween, and an insulating member, the laminate being wound around the insulating member in such a manner that one surface of the negative electrode layer and/or the positive electrode layer is parallel to a central axis of the insulating member in a stacking direction thereof, a negative terminal connected to the negative electrode layer, and a positive terminal connected to the positive electrode layer. When a direction of the central axis of the insulating member is a third direction, the negative terminal is disposed on one surface of the electrode assembly in the third direction, and the positive terminal is disposed on the other surface of the electrode assembly in the third direction.

Abstract: One aspect of the present disclosure relates to a noise masking method through variable masking sound level conversion, capable of adjusting an interval for changing a level of a masking sound for masking noise to an optimal interval so that the masking sound is not perceived as noise, by determining a fluctuation trend of a level of audible noise and adjusting the interval for changing the level of the masking sound for masking the noise into an optimal environment through a control unit.

Abstract: A method, executed by a processor for compressing an audio signal in multiple layers, may comprise: (a) restoring, in a highest layer, an input audio signal as a first signal; (b) restoring, in at least one intermediate layer, a signal obtained by subtracting an upsampled signal, which is obtained by upsampling the audio signal restored in the highest layer or an immediately previous intermediate layer, from the input audio signal as a second signal; and (c) restoring, in a lowest layer, a signal obtained by subtracting an upsampled signal, which is obtained by upsampling the audio signal restored in an intermediate layer immediately before the lowest layer, from the input audio signal as a third signal, wherein the first signal, the second signal, and the third signal are combined to output a final restoration audio signal.

Abstract: A generative adversarial network-based audio signal generation model for generating a high quality audio signal may comprise: a generator generating an audio signal with an external input; a harmonic-percussive separation model separating the generated audio signal into a harmonic component signal and a percussive component signal; and at least one discriminator evaluating whether each of the harmonic component signal and the percussive component signal is real or fake.

Abstract: A URL address determining method includes receiving a URL address extracted from a target server; requesting a response corresponding to the URL address from the target server; when receiving response data from the target server, extracting a response URL address corresponding to the URL address from the response data; and determining a resource indicated by the URL address by using the response URL address.

Abstract: A semiconductor memory includes metallic lines on a substrate and including an uppermost metallic line, a semiconductor conduction line on the uppermost metallic line, a vertical structure penetrating the semiconductor conduction line and metallic lines, and including a vertical structure that includes an upper channel film, a first lower channel film, and an upper connection channel film connecting the upper channel film and the first lower channel film between a bottom of the semiconductor conduction line and a bottom of the uppermost metallic line, and a first cutting line through the metallic lines and the semiconductor conduction line, and including a first upper cutting line through the semiconductor conduction line, and a first lower cutting line through the plurality of metallic lines, a width of the first upper cutting line being greater than a width of an extension line of a sidewall of the first lower cutting line.

Abstract: A coated steel sheet capable of implementing a rich three-dimensional effect, various patterns, and a natural esthetic sense and includes a steel sheet material which has a concave portion and a convex portion formed on one surface and a coating layer which is formed on the one surface by being coated on a coating material, wherein, as the coating layer is polished, at least a portion of the convex portion is exposed to an outside, and the concave portion is filled with the coating material.

Abstract: A haptic device according to one embodiment can comprise: a database unit for storing acoustic information or receiving the acoustic information from an external device; a control unit for converting the acoustic information into an electrical signal according to a predetermined pattern; a driving unit for generating a motion signal on the basis of the electrical signal; and a transfer unit for transferring a patterned tactile signal to a user by means of the motion signal.

Abstract: This invention relates to a polishing pad and a method for manufacturing the same. The polishing pad may include a top pad layer and a window block. The top pad layer may include a groove pattern formed on an upper surface of the top pad layer. A first hole may be formed through the top pad layer. The window block may be inserted into the first hole. The top pad layer and the window block may have a structure coincided with following Formula 1. 1.1 ? Gap + Thk RTPC Thk grv ? 3. Formula ? 1 In Formula 1, the gap may indicate a height difference between an upper surface of the top pad layer and an upper surface of the window block, the ThkRTPC may indicate a thickness of the window block, and the Thkgrv may indicate a depth of the groove pattern.

Abstract: The present invention relates to a hyaluronic acid-based hydrogel which is a hyaluronic acid-peptide crosslinked body crosslinked using a peptide crosslinking agent. More specifically, the present invention relates to a hyaluronic acid-based hydrogel and a method for producing same, wherein a crosslinked body having novel physical properties is obtained using a relatively small amount of a crosslinking agent that forms peptide bonds, unlike conventional crosslinking agents, and the hyaluronic acid-based hydrogel has the advantages of: being safe and having few side effects; the physical properties of a filler being adjustable according to the amount of peptide crosslinking; and having a high elasticity ratio.

Abstract: Disclosed herein is a quantifying method of uncertainty of measured value by close match span calibration of measuring sensor comprising a step of: a quantifying using below equation I. u c ( x bag ) ? [ 1 f cyl ? u ? ( R bag ) ] 2 + [ 1 f cyl ? u ? ( R cyl ) ] 2 + u 2 ( x cyl ) ( I ) wherein, uc is a combined standard uncertainty, Xbag is a measured value of a test, xcyl is standard value, fcyl is standard response factor (sensitivity coefficient), Rbag is a signal value of a test, represents xbag·fbag, Rcyl represents xcyl·fcyl, and u is standard uncertainty.

Abstract: Provided is a nonvolatile memory device. The nonvolatile memory device includes a conductive plate, a barrier conductive film extending along a surface of the conductive plate, a mold structure including a plurality of gate electrodes sequentially stacked on the barrier conductive film, a channel hole penetrating the mold structure to expose the barrier conductive film, an impurity pattern being in contact with the barrier conductive film, and formed in the channel hole, and a semiconductor pattern formed in the channel hole, extending from the impurity pattern along a side surface of the channel hole, and intersecting the plurality of gate electrodes.

Abstract: A CMP slurry composition for polishing a boron silicon (B—Si) compound may include a catalyst, an abrasive including a plurality of particles and being configured to polish the boron silicon (B—Si) compound, and a pH adjuster. The CMP slurry composition may further include an oxidizer. The catalyst may have a binary catalyst configuration comprising a first catalyst material and a second catalyst material. The first catalyst material may include Fe, and the second catalyst material may include Cu. The oxidizer may include hydrogen peroxide (H2O2). A CMP (chemical mechanical polishing) method for a boron silicon (B—Si) compound may include providing a substrate structure including a thin film formed of the boron silicon (B—Si) compound and performing a CMP process on the thin film. The CMP process is performed by using the CMP slurry composition.

Abstract: According to one embodiment, a tactile actuator can comprise: a housing having an accommodation space therein; a cap covering at least a portion of the accommodation space; a vibration unit disposed inside the accommodation space; an elastic member for connecting the housing and the vibration unit such that the vibration unit can vibrate with respect to the housing; a coil for forming a magnetic field to drive the vibration unit; and a control unit for determining any one driving mode on the basis of collected driving information from among a plurality of preset driving modes and determining, according to the driving mode, the characteristic of a current to be applied to the coil.

Abstract: A user terminal device and a controlling method thereof are provided. The user terminal device includes a display configured to be divided into a first area and a second area which is larger than the first area with reference to a folding line, a cover disposed on a rear side of the display, a detector configured to detect a user interaction on the display and the cover, and a controller configured to, in response to the display being folded along the folding line such that the first area and the second area face each other, control the detector to detect a user interaction through an exposure area, which is an exposed part of the second area, and the cover, and, in response to the display being folded such that the two parts of the cover face with each other with reference to the folding line, control the detector to detect a user interaction through the first area and the second area.

Abstract: A semiconductor memory device includes; a lower stacked structure including lower metallic lines stacked in a first direction on a substrate, an upper stacked structure including a first upper metallic line and a second upper metallic line sequentially stacked on the lower stacked structure, a vertical structure penetrating the upper stacked structure and lower stacked structure and including a channel film, a connection pad disposed on the vertical structure, contacted with the channel film and doped with N-type impurities, a first cutting line cutting the lower metallic lines, the first upper metallic line and the second upper metallic line, a second cutting line spaced apart from the first cutting line in a second direction different from the first direction, and cutting the lower metallic lines, the first upper metallic line and the second upper metallic line, and sub-cutting lines cutting the first upper metallic line and the second upper metallic line between the first cutting line and the second cuttin

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.