Abstract: A polymerase chain reaction (PCR) module is detachably combined with a reader system. The reader system includes a central processing unit (CPU) receiving a photo sensing signal to calculate gene amplification amount in real time and generating a temperature control signal based on a temperature signal and a temperature control information. The PCR module includes a photo sensor assembly, a partition wall, and an interface module. The photo sensor assembly includes a plurality of photo sensors and a temperature sensor. The photo sensors are arranged in an array shape to sense emission light generated from a specimen to generate the photo sensing signal. The partition wall is protruded from the photo sensor assembly to define a reaction space in which the specimen is received. The interface module is electrically connected to the photo sensor assembly to transmit the photo sensing signal and the temperature signal to the reader system.

Abstract: The present disclosure a biochip including a side emitting-type light-emitting device, in which the bio-chip includes: a light-emitting device for emitting light from a fluorescent material; reflective layers provided over and under the light-emitting device so as to emit light from the sides of the light-emitting device; and reaction regions formed by etching of flanking regions of the light-emitting device. In the biochip, light emitted from the sides of the light-emitting device causes a biochemical reaction in the reaction regions. According to the present disclosure, light emitted from the light-emitting device moves only laterally without being transferred to the top or bottom of the bio-layer, and is transferred to the reaction regions formed by etching of flanking regions of the light-emitting device, so that a biochemical reaction in the reaction regions can be more efficiently performed.

Abstract: A polymerase chain reaction (PCR) module is detachably combined with a reader system. The reader system includes a central processing unit (CPU) receiving a photo sensing signal to calculate gene amplification amount in real time and generating a temperature control signal based on a temperature signal and a temperature control information. The PCR module includes a photo sensor assembly, a partition wall, and an interface module. The photo sensor assembly includes a plurality of photo sensors and a temperature sensor. The photo sensors are arranged in an array shape to sense emission light generated from a specimen to generate the photo sensing signal. The partition wall is protruded from the photo sensor assembly to define a reaction space in which the specimen is received. The interface module is electrically connected to the photo sensor assembly to transmit the photo sensing signal and the temperature signal to the reader system.

Abstract: A polymerase chain reaction (PCR) module is detachably combined with a reader system. The reader system includes a central processing unit (CPU) receiving a photo sensing signal to calculate gene amplification amount in real time and generating a temperature control signal based on a temperature signal and a temperature control information. The PCR module includes a photo sensor assembly, a partition wall, and an interface module. The photo sensor assembly includes a plurality of photo sensors and a temperature sensor. The photo sensors are arranged in an array shape to sense emission light generated from a specimen to generate the photo sensing signal. The partition wall is protruded from the photo sensor assembly to define a reaction space in which the specimen is received. The interface module is electrically connected to the photo sensor assembly to transmit the photo sensing signal and the temperature signal to the reader system.

Abstract: The present disclosure a biochip including a side emitting-type light-emitting device, in which the bio-chip includes: a light-emitting device for emitting light from a fluorescent material; reflective layers provided over and under the light-emitting device so as to emit light from the sides of the light-emitting device; and reaction regions formed by etching of flanking regions of the light-emitting device. In the biochip, light emitted from the sides of the light-emitting device causes a biochemical reaction in the reaction regions. According to the present disclosure, light emitted from the light-emitting device moves only laterally without being transferred to the top or bottom of the bio-layer, and is transferred to the reaction regions formed by etching of flanking regions of the light-emitting device, so that a biochemical reaction in the reaction regions can be more efficiently performed.

Abstract: The present disclosure a biochip including a side emitting-type light-emitting device, in which the bio-chip includes: a light-emitting device for emitting light from a fluorescent material; reflective layers provided over and under the light-emitting device so as to emit light from the sides of the light-emitting device; and reaction regions formed by etching of flanking regions of the light-emitting device. In the biochip, light emitted from the sides of the light-emitting device causes a biochemical reaction in the reaction regions. According to the present disclosure, light emitted from the light-emitting device moves only laterally without being transferred to the top or bottom of the bio-layer, and is transferred to the reaction regions formed by etching of flanking regions of the light-emitting device, so that a biochemical reaction in the reaction regions can be more efficiently performed.

Abstract: A polymerase chain reaction (PCR) module is detachably combined with a reader system. The reader system includes a central processing unit (CPU) receiving a photo sensing signal to calculate gene amplification amount in real time and generating a temperature control signal based on a temperature signal and a temperature control information. The PCR module includes a photo sensor assembly, a partition wall, and an interface module. The photo sensor assembly includes a plurality of photo sensors and a temperature sensor. The photo sensors are arranged in an array shape to sense emission light generated from a specimen to generate the photo sensing signal. The partition wall is protruded from the photo sensor assembly to define a reaction space in which the specimen is received. The interface module is electrically connected to the photo sensor assembly to transmit the photo sensing signal and the temperature signal to the reader system.

Abstract: The present disclosure a biochip including a side emitting-type light-emitting device, in which the bio-chip includes: a light-emitting device for emitting light from a fluorescent material; reflective layers provided over and under the light-emitting device so as to emit light from the sides of the light-emitting device; and reaction regions formed by etching of flanking regions of the light-emitting device. In the biochip, light emitted from the sides of the light-emitting device causes a biochemical reaction in the reaction regions. According to the present disclosure, light emitted from the light-emitting device moves only laterally without being transferred to the top or bottom of the bio-layer, and is transferred to the reaction regions formed by etching of flanking regions of the light-emitting device, so that a biochemical reaction in the reaction regions can be more efficiently performed.

Abstract: A method for forming a pad in a wafer with a three-dimensional stacking structure is disclosed. The method includes bonding a device wafer that includes an Si substrate and a handling wafer, thinning a back side of the Si substrate, depositing an anti-reflective layer on the thinned back side of the Si substrate, depositing a back side dielectric layer on the anti-reflective layer, defining a space for a pad in the back side dielectric layer and forming vias that pass through the back side dielectric layer and the anti-reflective layer and contact back sides of super contacts which are formed on the Si substrate, filling one or more metals in the vias and the defined space for the pad, and removing a remnant amount of the metal filled in the space for the pad through planarization by a CMP (chemical mechanical polishing) process.

Abstract: The present invention relates to a method for electrically connecting wafers, which physically bonds two wafers through an oxide-to-oxide bonding method and then electrically connects the two wafers through a butting contact structure. The wafers are physically bonded to each other through a relatively simple method, and then electrically connected to through TSVs or butting contact holes. Therefore, since the fabrication process may be simplified, a process error may be reduced, and the product yield may be improved.

Abstract: An image sensor having a wave guide includes a semiconductor substrate formed with a photodiode and a peripheral circuit region; an anti-reflective layer formed on the semiconductor substrate; an insulation layer formed on the anti-reflective layer; a wiring layer formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode.

Abstract: The present invention relates to a method for electrically connecting wafers, which physically bonds two wafers through an oxide-to-oxide bonding method and then electrically connects the two wafers through a butting contact structure. The wafers are physically bonded to each other through a relatively simple method, and then electrically connected to through TSVs or butting contact holes. Therefore, since the fabrication process may be simplified, a process error may be reduced, and the product yield may be improved.

Abstract: A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.

Abstract: A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.

Abstract: A method for forming a pad in a wafer with a three-dimensional stacking structure is disclosed. The method includes bonding a device wafer that includes an Si substrate and a handling wafer, thinning a back side of the Si substrate, depositing an anti-reflective layer on the thinned back side of the Si substrate, depositing a back side dielectric layer on the anti-reflective layer, forming vias that pass through the anti-reflective layer and the back side dielectric layer and contact back sides of super contacts which are formed on the Si substrate, and forming a pad on the back side dielectric layer such that the pad is electrically connected to the vias.

Abstract: An image sensor having a wave guide includes a semiconductor substrate formed with a photodiode and a peripheral circuit region; an anti-reflective layer formed on the semiconductor substrate; an insulation layer formed on the anti-reflective layer; a wiring layer formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode.

Abstract: A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.

Abstract: An image sensor having a wave guide includes a semiconductor substrate formed with a photodiode and a peripheral circuit region; an anti-reflective layer formed on the semiconductor substrate; an insulation layer formed on the anti-reflective layer; a wiring layer formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode.

Abstract: Disclosed herein are a tidal power generating module and a tidal power generating method using the same. The tidal power generating module continuously generates power using compressed air and weight of seawater even at high tide and low tide at which the level of the seawater is not fluctuated in addition to the vertical movement of a vertical movement unit due to the rise and fall of the tide.

Abstract: A method for forming a pad in a wafer with a three-dimensional stacking structure includes: (a) a first process of bonding a device wafer and a handling wafer; (b) a second process of thinning a back side of an Si substrate which is formed on the device wafer, after the first process; (c) a third process of forming an anti-reflective layer and a PMD (preferential metal deposition) dielectric layer, after the second process; (d) a fourth process of forming vias on back sides of super contacts which are formed on the Si substrate, after the third process; and (e) a fifth process of forming a pad, after the fourth process.