Abstract: Disclosed are a CMOS image sensor and a method for manufacturing the same, capable of improving the characteristics of the image sensor by increasing junction capacitance of a floating diffusion area. The CMOS image sensor generally includes a photodiode and a plurality of transistors (e.g., transfer, reset, drive, and select transistors), a first conductive type semiconductor substrate, having an active area including a photodiode area, a floating diffusion area, and a voltage input/output area, a gate electrode of each transistor on the active area, a first conductive type first well area in the semiconductor substrate corresponding to the voltage input/output area, a first conductive type second well area in the semiconductor substrate corresponding to the floating diffusion area, and a second conductive type diffusion area in the semiconductor substrate at opposed sides of each gate electrode.

Abstract: A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.

Abstract: An image sensor having a wave guide includes a semiconductor substrate formed with a photodiode and a peripheral circuit region; an anti-reflective layer formed on the semiconductor substrate; an insulation layer formed on the anti-reflective layer; a wiring layer formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode.

Abstract: A CMOS image sensor and manufacturing method thereof are disclosed. The present CMOS image sensor comprises: a semiconductor substrate including an active region having a photo diode region and a transistor region; a gate on the active region, comprising a gate insulating layer and a gate electrode thereon; a first source/drain diffusion region in the transistor region at one side of the gate electrode, including a first conductivity type dopant; a second photo diode diffusion region in the region at the other side of the gate electrode, the second diffusion region including a first conductivity type dopant; insulating sidewalls on sides of the gate electrode; and a third diffusion region over or in the second diffusion region, extending below one of the insulating sidewalls (e.g., closest to the photo diode region), and including a second conductivity type dopant.

Abstract: Provided is a CMOS image sensor and method of manufacturing same. The CMOS image sensor includes a photodiode, a transfer transistor, a reset transistor, a drive transistor, and a select transistor. A device isolation layer is formed on a first conductive type substrate. Gate electrodes of the transfer transistor, the reset transistor, the drive transistor, and the select transistor are formed on an active region of the substrate with gate insulating layers interposed therebetween. A first diffusion region is formed of a second conductive type in a first region of the active region, where the first region does not include a floating diffusion region between the transfer transistor and the reset transistor and the photodiode region. A second diffusion region is formed of the second conductive type in the floating diffusion region at a concentration lower than that of the second conductive type first diffusion region.

Abstract: Disclosed are a CMOS image sensor and a method for manufacturing the same, for reducing or preventing damage to a photodiode and improving a pixel design margin to achieve scale down of a pixel. The CMOS image sensor includes an isolation layer in a semiconductor substrate, a gate electrode crossing a part of the isolation layer and the active area, a photodiode area in the active area, an insulating sidewall spacer on sides of the gate electrode, a metal silicide layer on the gate electrode and at least part of a surface of the photodiode area adjacent to the gate electrode, a metal layer electrically connecting the gate electrode to the photodiode area, and a dielectric layer on the entire surface of semiconductor substrate.

Abstract: CMOS image sensors and methods for fabricating the same are disclosed. A disclosed CMOS image sensor comprises: a semiconductor substrate; a photo diode; a microlens located over the photo diode; and a color filter layer located over the microlens.

Abstract: Disclosed are a complementary metal oxide semiconductor (CMOS) image sensor and a method for fabricating the same, which are capable of effectively preventing a cross talk effect. The CMOS image sensor includes a semiconductor substrate; device isolation regions provided on the semiconductor for defining device regions therebetween; photocharge generating portions provided on the device regions for receiving external light and for generating and storing electric charges; light concentrating portions provided over the photocharge generating portions for concentrating the external light onto corresponding photocharge generating portions; and cross talk preventing portions for preventing the light passing through the light concentrating portions from being incident onto adjacent photocharge generating portions.

Abstract: Disclosed are a CMOS image sensor and a method for manufacturing the same, capable of improving the characteristics of the image sensor by increasing junction capacitance of a floating diffusion area. The CMOS image sensor generally includes a photodiode and a plurality of transistors (e.g., transfer, reset, drive, and select transistors), a first conductive type semiconductor substrate, having an active area including a photodiode area, a floating diffusion area, and a voltage input/output area, a gate electrode of each transistor on the active area, a first conductive type first well area in the semiconductor substrate corresponding to the voltage input/output area, a first conductive type second well area in the semiconductor substrate corresponding to the floating diffusion area, and a second conductive type diffusion area in the semiconductor substrate at opposed sides of each gate electrode.

Abstract: A CMOS image sensor and a method for fabricating the same are disclosed, in which transfer characteristics are improved. The method includes forming a photodiode region and a second conductive type ion region on a surface of a first conductive type substrate by implanting a second conductive type impurity ion into an entire surface of the substrate where a transistor is to be formed, forming a second conductive type lightly doped ion region in the substrate corresponding to the photodiode region by lightly implanting a second conductive type impurity ion only in an area where the photodiode region is opened, and diffusing the second conductive type lightly doped ion region into the second conductive type ion region by a thermal process.

Abstract: Disclosed are a CMOS image sensor and a method for manufacturing the same, capable of improving the characteristics of the image sensor by increasing junction capacitance of a floating diffusion area. The CMOS image sensor generally includes a photodiode and a plurality of transistors (e.g., transfer, reset, drive, and select transistors), a first conductive type semiconductor substrate, having an active area including a photodiode area, a floating diffusion area, and a voltage input/output area, a gate electrode of each transistor on the active area, a first conductive type first well area in the semiconductor substrate corresponding to the voltage input/output area, a first conductive type second well area in the semiconductor substrate corresponding to the floating diffusion area, and a second conductive type diffusion area in the semiconductor substrate at opposed sides of each gate electrode.

Abstract: A method of fabricating a CMOS image sensor is provided.

Abstract: A method for fabricating a CMOS image sensor is provided. The method includes: forming a gate electrode with a gate insulating layer interposed on a transistor region of a semiconductor substrate having an active region defined by a photo diode and a transistor region; forming a first impurity region of a first conductive type at a transistor region at one side of the gate electrode; forming a second impurity region of a first conductive type at a photo diode region at other side of the gate electrode; forming sidewall insulating layers at both sides of the gate electrode; forming a third impurity region of a first conductive type at one side of a gate electrode where the first impurity region is formed; and forming a fourth impurity region of a second conductive type at the gate electrode, the photodiode region and the transistor region by implanting impurity ions of a second conductive type on the entire surface of the semiconductor substrate.

Abstract: A CMOS image sensor-manufacturing method includes forming a photodiode on a substrate, forming an insulating layer over the substrate, forming a contact hole in the insulating layer, and forming a gate terminal over the insulating layer. The gate terminal is connected to the photodiode through the contact hole.

Abstract: A method for fabricating a photodiode of a CMOS image sensor is disclosed, to improve a charge accumulation capacity in the photodiode, which includes the steps of defining a semiconductor substrate as an active area and a field area by forming an STI layer; firstly implanting impurity ions for formation of the photodiode to the semiconductor substrate of the active area; secondarily implanting impurity ions for formation of the photodiode to the semiconductor substrate being adjacent to the STI layer; and forming a photodiode ion-implantation diffusion layer by diffusing the implanted impurity ions with a thermal process.

Abstract: A phototransistor of a CMOS image sensor suitable for decreasing the size of layout, and a method for fabricating the phototransistor are disclosed, in which the phototransistor includes a first conductive type semiconductor substrate; an STI layer on the first conductive type semiconductor substrate, to define an active area and a device isolation area in the first conductive type semiconductor substrate; a second conductive type well in the first conductive type semiconductor substrate; a gate line on the first conductive type semiconductor substrate; an ohmic contact layer in the second conductive type well, wherein the ohmic contact layer is overlapped with the gate line in state of interposing the STI layer therebetween; and a contact to connect the gate line with the ohmic contact layer through the STI layer.

Abstract: An image sensor and a method of manufacturing the same are disclosed. When forming an impurity region for a photodiode, the photodiode can be exposed by reducing the impurity region. Thus, a depletion region of the photodiode, formed when the sensor operates, extends to the exposed surface of the photodiode through the inner region of the photodiode, so that it is possible for the photodiode to normally absorb short wavelength light as well as long wavelength light at its depletion region. Also, the uniformity of the generation of photo electrons depending on the different colors of lights can be optimized, and the color presentation quality can be further enhanced.

Abstract: A CMOS image sensor includes a semiconductor substrate with an active area. A photodiode and a plurality of transistors may be formed on the active area. The active area has a portion with a variable width below a reset transistor.

Abstract: A CMOS image sensor, and method for manufacturing the same is provided. The CMOS image sensor includes a device isolation film formed in a device isolation region of a semiconductor substrate to define an active region and a device isolation region, a gate insulation film formed on the semiconductor substrate. The gate insulation film has different thicknesses at the interface with the device isolation film and an interface with the active region. A gate electrode is formed on the gate insulation film. A floating diffusion region is formed in the semiconductor substrate at one side of the gate electrode. A photodiode region is formed in the semiconductor substrate at the other side of the gate electrode.

Abstract: CMOS image sensors and methods for fabricating the same are disclosed. A disclosed CMOS image sensor comprises: a semiconductor substrate; a photo diode; a microlens located over the photo diode; and a color filter layer located over the microlens.