Patents by Inventor In Hwan SONG

In Hwan SONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory device and memory data read method
    Publication number: 20090207659
    Abstract: Provided are memory devices and memory data read methods. A method device may include: a multi-bit cell array; a decision unit that may detect threshold voltages of multi-bit cells of the multi-bit cell array to decide first data from the detected threshold voltages, using a first decision value; an error detector that may detect an error bit of the first data; and a determination unit that may determine whether the decision unit decides second data from the detected threshold voltages using a second decision value, based on a number of detected error bits, the second decision value being different from the first decision value. Through this, it is possible to reduce time spent for reading data stored in the multi-bit cell.
    Type: Application
    Filed: July 25, 2008
    Publication date: August 20, 2009
    Inventors: Seung-Hwan Song, Heeseok Eun, Dong Hun Yu, Jun Jin Kong
  • Memory device and memory device heat treatment method
    Publication number: 20090201729
    Abstract: A memory device and a memory device heat treatment method are provided. The memory device may include: a non-volatile memory device; one or more heating devices configured to contact with the non-volatile memory device and heat the non-volatile memory device; and a controller configured to control an operation of the one or more heating devices based on operational information of the non-volatile memory device. Through this, it may be possible to improve an available period of the non-volatile memory device.
    Type: Application
    Filed: July 16, 2008
    Publication date: August 13, 2009
    Inventors: Seung-Hwan Song, Jun Jin Kong, Jae Hong Kim, Young Hwan Lee, Dong Hyuk Chae, Tae Hun Kim, Kyoung Lae Cho
  • Memory device and method of reading memory data
    Publication number: 20090190396
    Abstract: A memory device and a method of reading multi-bit data stored in a multi-bit cell array may be provided. The memory device may include a multi-bit cell array including a least one memory page with each memory page having a plurality of multi-bit cells, and a determination unit to divide the plurality of multi-bit cells into a first group and second group. The first group may include multi-bit cells with a threshold voltage higher than a reference voltage. The second group may include multi-bit cells with a threshold voltage lower than the reference voltage. The determination unit may sequentially update the first group and second group while changing the reference voltage.
    Type: Application
    Filed: July 18, 2008
    Publication date: July 30, 2009
    Inventors: Kyoung Lae Cho, Dong Hun Yu, Jun Jin Kong, Seung-Hwan Song, Yoon Dong Park, Jong Han Kim, Young Hwan Lee
  • Apparatus and method of memory programming
    Publication number: 20090185417
    Abstract: A memory programming apparatuses and/or methods are provided. The memory programming apparatus may include a data storage unit, a first counting unit, an index storage unit and/or a programming unit. The data storage unit may be configured to store a data page. The first counting unit may be configured to generate index information by counting a number of cells included in at least one reference threshold voltage state based on the data page. The index storage unit may be configured to store the generated index information. The programming unit may be configured to store the data page in the data storage unit and store the generated index information in the index storage unit. The first counting unit may send the generated index information to the programming unit. The memory programming apparatus can monitor distribution states of threshold voltages in memory cells.
    Type: Application
    Filed: June 26, 2008
    Publication date: July 23, 2009
    Inventors: Kyoung Lae Cho, Yoon Dong Park, Jun Jin Kong, Jong Han Kim, Jae Hong Kim, Young Hwan Lee, Heeseok Eun, Seung-Hwan Song
  • Memory device and method of multi-bit programming
    Publication number: 20090182934
    Abstract: Memory devices and multi-bit programming methods are provided. A memory device may include a plurality of memory units; a data separator that separates data into a plurality of groups; a selector that rotates each of the plurality of groups and transmits each of the groups to at least one of the plurality of memory units. The plurality of memory units may include page buffers that may program the transmitted group in a plurality of multi-bit cell arrays using a different order of a page programming operation. Through this, evenly reliable data pages may be generated.
    Type: Application
    Filed: June 6, 2008
    Publication date: July 16, 2009
    Inventors: Jaehong Kim, Kyoung Lae Cho, Jun Jin Kong, Heeseok Eun, Seung-Hwan Song
  • Semiconductor device having a pair of fins and method of manufacturing the same
    Patent number: 7560344
    Abstract: Example embodiments relate to a semiconductor device and a method of manufacturing the same. A semiconductor device according to example embodiments may have reduced disturbances during reading operations and a reduced short channel effect. The semiconductor device may include a semiconductor substrate having a body and a pair of fins protruding from the body. Inner spacer insulating layers may be formed on an upper portion of an inner sidewall of the pair of fins so as to reduce the entrance to the region between the pair of fins. A gate electrode may cover a portion of the external sidewalls of the pair of fins and may extend across the inner spacer insulating layers so as to define a void between the pair of fins. Gate insulating layers may be interposed between the gate electrode and the pair of fins.
    Type: Grant
    Filed: October 19, 2007
    Date of Patent: July 14, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Suk-pil Kim, Yoon-dong Park, Jong-jin Lee, Won-joo Kim, June-mo Koo, Seung-hwan Song
  • Electrolyte for lithium battery and lithium battery comprising the same
    Patent number: 7560195
    Abstract: An electrolyte for a lithium battery and a lithium battery thereof are provided. The electrolyte includes a non-aqueous organic solvent; lithium salt; and an additive selected from the group consisting of the compounds represented by formulas (1) to (3), and combinations thereof: where X is selected from the group consisting of hydrogen, halogen, alkyl groups having from 1 to 6 carbon atoms, and aryl groups having from 6 to 8 carbon atoms, and R is an alkyl group having from 1 to 6 carbon atoms or an aryl group having from 6 to 10 carbon atoms. The lithium battery including the electrolyte suggested in the present invention has superior overcharge characteristics and superior safety characteristics compared to conventional batteries including a non-aqueous electrolyte.
    Type: Grant
    Filed: May 12, 2008
    Date of Patent: July 14, 2009
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Kyoung-Han Yew, Eui-Hwan Song
  • Memory device and error control codes decoding method
    Publication number: 20090177931
    Abstract: Memory devices and/or error control codes (ECC) decoding methods may be provided. A memory device may include a memory cell array, and a decoder to perform hard decision decoding of first data read from the memory cell array by a first read scheme, and to generate output data and error information of the output data. The memory device may also include and a control unit to determine an error rate of the output data based on the error information, and to determine whether to transmit an additional read command for soft decision decoding to the memory cell array based on the error rate. An ECC decoding time may be reduced through such a memory device.
    Type: Application
    Filed: May 14, 2008
    Publication date: July 9, 2009
    Inventors: Seung-Hwan Song, Jun Jin Kong, Jae Hong Kim, Kyoung Lae Cho, Sung Chung Park
  • Memory device and method for estimating characteristics of multi-bit cell
    Publication number: 20090175076
    Abstract: Memory devices and/or methods that may estimate characteristics of multi-bit cell are provided. A memory device may include: a multi-bit cell array; a monitoring unit to extract a threshold voltage change over time value for reference threshold voltage states selected from a plurality of threshold voltage states corresponding to data stored in the multi-bit cell array; and an estimation unit to estimate a threshold voltage change over time values for the plurality of threshold voltage states based on the extracted threshold voltage change. Through this, it is possible to monitor a change over time of threshold voltages of a memory cell.
    Type: Application
    Filed: June 23, 2008
    Publication date: July 9, 2009
    Inventors: Kyoung Lae Cho, Seung-Hwan Song, Yoon Dong Park, Jun Jin Kong, Jae-Hong Kim
  • METHOD FOR PROCESSING DATA AND SYSTEM THEREOF
    Publication number: 20090157681
    Abstract: The present invention relates to a data processing method and system for checking an interactive communication sequence (ICS) relating to a plurality of users in a communication record by using a variable time window, and checking an interactive communication sequence pattern (ICSP) that is a frequently generated interactive communication sequence from among the checked interactive communication sequences.
    Type: Application
    Filed: December 17, 2008
    Publication date: June 18, 2009
    Applicants: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Man Ho Park, Song In Choi, Jee Hwan Ahn, Byung Wan Lim, Ji Hwan Song, Myoung Ho Kim
  • Apparatus and method of multi-bit programming
    Publication number: 20090109748
    Abstract: Multi-bit programming apparatuses and/or methods are provided. A multi-bit programming apparatus may include: a first control unit that allocates any one of 2N threshold voltage states to the N-bit data; a second control unit that spaces, by any one of a first interval and a second interval, adjacent threshold voltage states of the 2N threshold voltage states; and a programming unit that programs the N-bit data by generating, in each of the at least one multi-bit cell, a distribution state corresponding to the allocated threshold voltage state. The multi-bit programming apparatus can reduce an error rate when reading data.
    Type: Application
    Filed: March 18, 2008
    Publication date: April 30, 2009
    Inventors: Kyoung Lae CHO, Yoon Dong PARK, Jun Jin KONG, Seung Hoon LEE, Jung Hun SUNG, Sung-Jae BYUN, Seung-Hwan SONG, Donghun YU, Sung Chung PARK, Heeseok EUN
  • Apparatus and method of multi-bit programming
    Publication number: 20090103359
    Abstract: Multi-bit programming apparatuses and/or methods are provided. A multi-bit programming apparatus may comprise: a multi-bit cell array that includes a first multi-bit cell and a second multi-bit cell; a programming unit for programming first data in the first multi-bit cell, and programming second data in the second multi-bit cell; and a verification unit for verifying whether the first data is programmed in the first multi-bit cell using a first verification voltage, and verifying whether the second data is programmed in the second multi-bit cell using a second verification voltage. The multi-bit programming apparatus may generate better threshold voltage distributions in a multi-bit cell memory.
    Type: Application
    Filed: February 29, 2008
    Publication date: April 23, 2009
    Inventors: Seung-Hwan SONG, Kyoung Lae Cho, Heeseok Eun, Dong Hyuk Chae, Jun Jin Kong, Sung Chung Park
  • Apparatus and method of multi-bit programming
    Publication number: 20090091990
    Abstract: Disclosed are a multi-bit programming apparatus and a multi-bit programming method. The multi-bit programming apparatus may include a first control unit that may generates 2N threshold voltage states based on a target bit error rate (BER) of each of the page programming operations, a second control unit that may assign any one of the threshold voltage states to the N-bit data, and a programming unit that may program the assigned threshold voltage state in each of the at least one multi-bit cell to program the N-bit data.
    Type: Application
    Filed: April 16, 2008
    Publication date: April 9, 2009
    Inventors: Sung Chung Park, Heeseok Eun, Seung-Hwan Song, Jun Jin Kong, Dong Hyuk Chae
  • Apparatus and Method For Collaborative Location Awareness Based on Weighted Maximum Likelihood Estimation
    Publication number: 20090091497
    Abstract: Provided is an apparatus and method for collaborative location awareness based on weighted maximum likelihood estimation (MLE), which is configured to improve accuracy of location awareness between nodes in estimating a location of a blind node. The method includes exchanging location awareness information with a reference node and a location-estimated blind node among peripheral nodes when location awareness is requested, performing location estimation based on weighted MLE, performing location calculation by using the location awareness information and an estimate obtained through the location estimation, and providing location awareness results of blind nodes.
    Type: Application
    Filed: December 27, 2007
    Publication date: April 9, 2009
    Applicant: Korea Electronics Technology Institute
    Inventors: Jae-Ho KIM, Min-Hwan Song, II-Yeup Ahn, Sang-Shin Lee, Kwang-Ho Won, Dong-Sun Kim, Tae-Hyun Kim
  • Methods of programming non-volatile memory cells
    Publication number: 20090091974
    Abstract: A method of programming a non-volatile memory cell includes programming a first bit of multi-bit data by setting a threshold voltage of the non-volatile memory cell to a first voltage level within a first of a plurality of threshold voltage distributions. A second bit of the multi-bit data is programmed by setting the threshold voltage to a second voltage level based on a value of the second bit. The second voltage level is the same as the first voltage level if the second bit is a first value and the second voltage level is within a second of the plurality of threshold voltage distributions if the second bit is a second value. A third bit of the multi-bit data is programmed by setting the threshold voltage to a third voltage level based on a value of the third bit.
    Type: Application
    Filed: July 25, 2008
    Publication date: April 9, 2009
    Inventors: Ju-hee Park, Young-moon Kim, Yoon-dong Park, Seung-hoon Lee, Kyoung-lae Cho, Sung-jae Byun, Seung-hwan Song
  • derived composition for detecting peptidoglycan, a method for use thereof, and a diagnostic kit containing the same
    Patent number: 7507553
    Abstract: The present invention relates to a composition for selectively detecting an extremely small amount of peptidoglycan in sample, a preparation method of the composition, and a detection kit for peptidoglycan. It is possible to quantify a small amount of peptidoglycan contained in human blood, tissue, body fluid, water or food, and to diagnose an infection of microorganism with peptidoglycan as a component of cell wall using the composition and the detection kit. In addition, the composition can be applied for a diagnosis reagent of detecting an infection of Gram-positive bacteria in animal or human being in advance, and thus, can be used for the prevention or treatment of food poisonings and bacterial sepsis.
    Type: Grant
    Filed: July 27, 2006
    Date of Patent: March 24, 2009
    Assignee: Samyan Genex Corporation
    Inventors: Bu-Soo Park, Bok-Luel Lee, Ji-Won Park, Jeong-Mi Yeo, Hyun-Sic Kim, Chang-Hun Joo, Moon-Suk Kim, Seung-Hwan Song, Jong-Won Yoon, Yeon-Sung Park, Hong-Lak Kim, Joong-Hyuck Auh, Tae-Hoon Cho
  • MULTI-BIT DATA MEMORY SYSTEM AND READ OPERATION
    Publication number: 20090067237
    Abstract: Provided is a read operation for a N-bit data non-volatile memory system. The method includes determining in relation to data states of adjacent memory cells associated with a selected memory cell in the plurality of memory cells whether read data obtained from the selected memory cell requires compensation, and if the read data requires compensation, replacing the read data with compensated read data.
    Type: Application
    Filed: September 5, 2008
    Publication date: March 12, 2009
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung-Jae LEE, Dong-Ku KANG, Seung-Hwan SONG, Jun-Jin KONG, Dong-Hyuk CHAE, Sung-Chung PARK
  • OPTICAL MODULE
    Publication number: 20090060426
    Abstract: An optical module having a second connector unit mounted on the bottom of a first connector unit to reduce the size of the radiation member and the optical module. The optical module includes a first connector unit, a radiation member provided on a first side of the first connector unit to support the first connector unit and radiate heat, a second connector provided on the first connector unit to electrically connect the first connector unit to a PCB, and a fastening member provided on surfaces of the first and second connector units, which face each other, to fasten the first and second connectors to each other. The optical module is advantageous reduces the size of the radiation member and renders a more compact optical module.
    Type: Application
    Filed: August 29, 2008
    Publication date: March 5, 2009
    Inventors: Jeong-Seok Lee, Sung-Wook Kang, Jun-Young Lee, Yu-Dong Bae, Jeong-Hwan Song
  • Apparatus and method for multi-bit programming
    Publication number: 20090046510
    Abstract: Multi-bit programming apparatuses and methods are provided. A multi-bit programming apparatus may include: a first programming unit that stores data corresponding to a number of first bits in at least one first memory cell that may be connected to at least one first bit line; and a second programming unit that stores data corresponding to a number of second bits in at least one second memory cell that may be connected to at least one second bit line. Through this, it may be possible to improve data reliability and increase a number of bits to be stored in the entire memory cell.
    Type: Application
    Filed: January 15, 2008
    Publication date: February 19, 2009
    Inventors: Seung-Hwan Song, Jun Jin Kong, Sung Chung Park, Heeseok Eun, Dong Hyuk Chae, Kyoung Lae Cho
  • Mobile phone
    Patent number: D592166
    Type: Grant
    Filed: June 24, 2008
    Date of Patent: May 12, 2009
    Assignee: LG Electronics Inc.
    Inventor: Seung Hwan Song