Abstract: A method and apparatus for monitoring a code to detect intrusion code is used to monitor target code to determine whether the target code is a resident code in a system or an intrusion code into the system. A first code pattern is extracted from the target code and a second code pattern is loaded from a storage unit, and a distance between the first code pattern and the second code pattern is calculated. The calculated distance is compared to a threshold to determine whether the target code is an intrusion code.

Abstract: An electrolyte for a lithium secondary battery which has a non-aqueous organic solvent including a ?-butyrolactone and optionally a cyclic carbonate, an ester compound having an electron withdrawing group, and at least two salts. The lithium secondary battery including the electrolyte has good safety and good storage characteristics at high temperature.

Abstract: An optical module comprises a waveguide, at least one optical transducer positioned on the waveguide for transducing an optical signal into an electric signal or an electric signal into an optical signal and a connection socket seated on the waveguide, the optical transducer being mounted in the connection socket.

Abstract: In reading data from a memory cell, a determining circuit determines whether a received voltage value is within at least one first voltage range through a one-time read operation using a semiconductor device that senses an output current corresponding to the received voltage value. The at least one first voltage range includes a first upper limit voltage value and a first lower limit voltage value. A data value of the memory cell is set as a first data value when the received voltage value is within the specific voltage range.

Abstract: A code encoding apparatus includes a delay circuit and a code generator. The delay circuit generates delayed information based on p-bit input information received in parallel. The delayed information is generated according to a clock. The code generator generates n·p-bit code based on at least one of the input information and the delayed information, where n is a rational number.

Abstract: A method and apparatus for controlling a reading level of a memory cell are provided. The method of controlling a reading level of a memory cell may include: receiving metric values calculated based on given voltage levels and reference levels; generating summed values for each of the reference levels by summing metric values corresponding to levels of a received signal from among the received metric values; selecting the reference level having the greatest value of the generated summed values from the reference levels; and controlling the reading level of the memory cell based on the selected reference level.

Abstract: A method and an apparatus for programming data of memory cells considering coupling are provided. The method includes: calculating a change of a threshold voltage based on source data of the memory cells; converting source data which will be programmed based on the calculated change of the threshold voltage; and programming the converted source data.

Abstract: According to an example embodiment, a method of generating a soft decision value using an Analog-to-Digital Converter (ADC) having a given resolution may include receiving metric values calculated based on levels of a transmission signal and output levels of the ADC. Metric values corresponding to a level of a received signal may be selected from among the received metric values. A first maximum metric value may be detected from among the selected metric values when a transmission bit is a first level, and a second maximum metric value may be detected from among the selected metric values when the transmission bit is a second level. The soft decision value may be generated based on a difference between the first maximum metric value and the second maximum metric value.

Abstract: A code puncturing apparatus and method is provided. The apparatus includes: a codeword selection unit selecting continuous n?1-number of mother codewords from mother codewords generated from k-bit effective information, where k denotes a natural number, and one redundancy bit; and a puncturing unit selecting k-number of redundancy bits from redundancy bits included in the n?1-number of mother codewords, deleting remaining redundancy bits, and rearranging the n?1-number of mother codewords into an n·k bit-target codeword. Accordingly, a code rate of an Error Control Code (ECC) can be raised.

Abstract: Disclosed are an apparatus and a method for reading data. The method for reading data according to example embodiments includes comparing a threshold voltage of a memory cell with a first boundary voltage, comparing the threshold voltage with a second boundary voltage having a higher voltage level than that of the first boundary voltage, and determining data of the memory cell based on the threshold voltage, the first boundary voltage, and the second boundary voltage.

Abstract: Provided are a memory cell programming method and a semiconductor device which may be capable of simultaneously writing a bit of data and then another bit of the data to a plurality of memory blocks. The memory programming method, in which M bits of data are written to a plurality of memory blocks, may include a data division operation and a data writing operation where M may be a natural number. In the data division operation, the plurality of memory blocks may be divided into a plurality of memory block groups. In the data writing operation, an ith bit of the data may be simultaneously written to two or more memory block groups from among the plurality memory block groups, and then an i+1th bit of the data may be simultaneously written to the two or more memory block groups from among the plurality memory block groups, where i is a natural number less than M.

Abstract: Provided are a method of writing/reading data into/from a memory cell and a page buffer using different codes for the writing and reading operations. The method of writing/reading data into/from a memory cell that has a plurality of threshold voltage distributions includes a data writing operation and a data reading operation. In the data writing operation, data having a plurality of bits is written into the memory cell by using a plurality of writing codes corresponding to threshold voltage distributions. In the data reading operation, the data having a plurality of bits is read from the memory cell by using reading codes corresponding to the threshold voltage distributions from among the threshold voltage distributions. In the method of writing/reading data into/from a memory cell, a part of the writing codes is different from a corresponding part of the reading codes.

Abstract: Disclosed is a polymer electrolyte composition for a rechargeable lithium battery including a multifunctional monomer represented by formula 1, a polymer initiator, a non-aqueous organic solvent, and a lithium salt: where A is one represented by one of formulae 1a, 1b, or 1c; where n is an integer of 1 to 10; R1 to R7 are the same or are independently selected from H, C1 to C3 alkyls, and C?N; and X is a C1 to C20 aliphatic or aromatic carbon, or polyether.

Abstract: An Error Control Code (ECC) apparatus applied to a memory of a Multi-Level Cell (MLC) method may include: a bypass control signal generator generating a bypass control signal; and an ECC performing unit that may include at least two ECC decoding blocks, determining whether to bypass a portion of the at least two ECC decoding blocks based on the bypass control signal, and/or performing an ECC decoding. In addition or in the alternative, the ECC performing unit may include at least two ECC encoding blocks, determining whether to bypass a portion of the at least two ECC encoding blocks based on the bypass control signal, and/or performing an ECC encoding. An ECC method applied to a memory of a MLC method and a computer-readable recording medium storing a program for implementing an EEC method applied to a memory of a MLC method are also disclose.

Abstract: An Error Control Code (ECC) apparatus may include a control signal generator that generates an ECC control signal based on channel information. The ECC apparatus also may include: a plurality of ECC encoding controllers that output data respectively inputted via storage elements corresponding to the ECC control signal; and/or an encoding unit that encodes, using a plurality of data outputted from the plurality of ECC encoding controllers, encoding input data into a number of subdata corresponding to the ECC control signal. In addition or in the alternative, the ECC apparatus may include: a plurality of ECC decoding controllers that output data respectively inputted via the storage elements corresponding to the ECC control signal; and/or a decoding unit that decodes, using a plurality of data outputted from the plurality of ECC decoding controllers, a number of decoding input data corresponding to the ECC control signal into one piece of output data.

Abstract: A method of fabricating a non-volatile memory device according to example embodiments may include forming a semiconductor layer on a substrate. A plurality of lower charge storing layers may be formed on a bottom surface of the semiconductor layer. A plurality of lower control gate electrodes may be formed on the plurality of lower charge storing layers. A plurality of upper charge storing layers may be formed on a top surface of the semiconductor layer. A plurality of upper control gate electrodes may be formed on the plurality of upper charge storing layers, wherein the plurality of lower and upper control gate electrodes may be arranged alternately.

Abstract: Various read level control apparatuses and methods are provided. In various embodiments, the read level control apparatuses may include an error control code (ECC) decoding unit for ECC decoding data read from a storage unit, and a monitoring unit for monitoring a bit error rate (BER) based on the ECC decoded data and the read data. The apparatus may additionally include an error determination unit for determining an error rate of the read data based on the monitored BER, and a level control unit for controlling a read level of the storage unit based on the error rate.

Abstract: An electrolyte for a lithium battery and a lithium battery thereof are provided. The electrolyte includes a non-aqueous organic solvent; lithium salt; and an additive selected from the group consisting of the compounds represented by formulas (1) to (3), and combinations thereof: where X is selected from the group consisting of hydrogen, halogen, alkyl groups having from 1 to 6 carbon atoms, and aryl groups having from 6 to 8 carbon atoms, and R is an alkyl group having from 1 to 6 carbon atoms or an aryl group having from 6 to 10 carbon atoms. The lithium battery including the electrolyte suggested in the present invention has superior overcharge characteristics and superior safety characteristics compared to conventional batteries including a non-aqueous electrolyte.

Abstract: A wafer support pin has a front end contacted with a wafer such that the front end is flat or rounded. Thus, gravitational stress is minimized during annealing the wafer, thereby minimizing slip dislocation. This wafer support pin is suitably used for annealing of a wafer, particularly high temperature rapid thermal annealing of a large-diameter wafer.

Abstract: A flexible printed circuit board module includes a flexible printed circuit board having a conductive layer in an upper part of the flexible printed circuit board, an optical fiber disposed under the flexible printed circuit board, light propagating through an interior of the optical fiber and a supporting member supporting an optical fiber and having a first reflecting member reflecting incident light from the flexible printed circuit board so as to connect the light to the optical fiber.