Abstract: A method is provided for providing a multimedia content type ring-back by an origination terminal in a communication system. The method includes providing a multimedia content type ring-back including menu keys mapped to services; and providing a service mapped to a particular menu key, upon receipt of the particular menu key while providing the multimedia content type ring-back. Further, a method is provided for providing a multimedia content type bell by a destination terminal in a communication system. The method includes providing a multimedia content type bell including menu keys mapped to services; and providing a service mapped to a particular menu key, upon receipt of the particular menu key while providing the multimedia content type bell.

Abstract: A system and method for providing multimedia portal contents in a communication system. The method provides a ring-back tone to a calling terminal, the calling terminal sets first multimedia portal contents to be provided as the ring-back tone in consideration of given information of a calling terminal user. A called terminal sets second multimedia portal contents to provide as the ring-back tone in consideration of the given information of the calling terminal user, and the calling and called terminals transmit call connection setup related signals including set information. A first server receives the call connection setup-related signals and provides specific multimedia portal contents as the ring-back tone when the calling and called terminals set the multimedia portal contents, and provides the determined multimedia portal contents to the calling terminal.

Abstract: One embodiment of the present invention relates to a method and a apparatus for converting a three-dimensional image using depth map information. The apparatus comprise a depth map estimation unit which estimates the depth map information for each pixel present in each frame of input image data, a depth map application unit which moves each pixel by the depth map information in the X-axis direction, a 3D image interpolation unit which, when a blank pixel occurs in the frame due to the movement, forms an interpolated pixel in the blank pixel by applying a weight to adjacent pixels of the blank pixel, and a 3D image rendering processing unit which renders a left-eye image and a right-eye image to which the interpolated pixel is applied.

Abstract: Provided are a high voltage semiconductor device in which a field shaping layer is formed on the entire surface of a semiconductor substrate and a method of fabricating the same. Specifically, the high voltage semiconductor device includes a first conductivity-type semiconductor substrate. A second conductivity-type semiconductor layer is disposed on a surface of the semiconductor substrate, and a first conductivity-type body region is formed in semiconductor layer. A second conductivity-type source region is formed in the body region. A drain region is formed in the semiconductor layer and is separated from the body region. The field shaping layer is formed on the entire surface of the semiconductor layer facing the semiconductor layer.

Abstract: A touch screen display device includes; a touch screen display panel including; first sensing lines which extend in a first direction, second sensing lines which extend in a second direction, and a plurality of touch sensors located at a plurality of sensing positions, each of which provides touch data or untouch data, a readout unit which reads the touch data or the untouch data and outputs the read data as sensing data corresponding to each of the sensing positions, and a sensing unit which groups the sensing positions into at least one pre-touch areas using the sensing data and which recognizes at least one touch positions using the pre-touch areas, wherein when first and third sensing positions from among first through third sensing positions provide the touch data while the second sensing position provides the untouch data, the sensing unit recognizes the untouch data as the touch data.

Abstract: An embodiment of the present invention relates to a method and apparatus for correcting errors in stereo images. The apparatus for correcting errors in stereo images according to an embodiment of the present invention comprises: a space histogram generation unit generating space histogram information using the depth map information on the input image data; a peak frequency generation unit generating a peak frequency using the 2D image data of the input image data; an object analysis unit determining the error in each frame of the input image data on the basis of the space histogram and peak frequency; a depth map error correction unit correcting the depth map information to reduce the error; and a rendering processing unit generating left and right eye images, which are stereo images, by using the corrected depth map information.

Abstract: Provided are a semiconductor device and a method of fabricating the semiconductor device.

Abstract: Disclosed is an air conditioner having a control box assembly, which enhances the serviceability of a circuit board and reduces production costs. In the air conditioner, which has a casing unit forming an external appearance of the air conditioner, a heat exchanger, a blowing device, and a control box assembly provided in the casing, the control box assembly includes a mounting unit mounting a circuit board; a control box housing the circuit board and the mounting unit; and guide units provided in the control box to guide a rectilinear reciprocating motion of the mounting unit to allow the mounting unit to come into and out of the control box and guide a rotating motion of the mounting unit in the case that the mounting unit is located at a designated position.

Abstract: A method and an apparatus select a domain of an application server in order to support a voice call continuity service in a mobile communication system including an IP Multimedia Subsystem (IMS) domain and a Circuit Switched (CS) domain. The method includes selecting either the IMS domain or the CS domain according to a dynamic domain selection priority which is predetermined corresponding to a terminal when a voice call for the terminal is received. The method also includes anchoring the received voice call corresponding to the terminal through the selected domain. A voice call establishment for a terminal using first the most recent domain which is used for a voice call in a mobile communication system is initiated. Thus, it is possible in a mobile communication system to increase the domain selecting completion rates for a voice call service corresponding to a terminal.

Abstract: Provided are a semiconductor device including a source/drain and a gate formed using a doped polysilicon process, and a method of fabricating the semiconductor device. The method comprises: forming a gate insulating layer on a part of an active region on a first conductivity type epitaxial layer; forming a conductive layer on the epitaxial layer; implanting high concentration impurities of a second conductivity type a first portion of the conductive layer on the gate insulating layer and second portions of the conductive layer on both sides of the first insulating layer; patterning the conductive layer; forming a second insulating layer on the epitaxial layer and high concentration impurity regions of the second conductivity type below the second conductive pattern; and implanting low-concentration impurities of the second conductivity type into the epitaxial layer between a gate structure and the high concentration impurity regions.

Abstract: Disclosed is a power semiconductor device including a bootstrap circuit. The power semiconductor device includes a high voltage unit that provides a high voltage control signal so that a high voltage is output; a low voltage unit that provides a low voltage control signal so that a ground voltage is output, and is spaced apart from the high voltage unit; a charge enable unit that is electrically connected to the low voltage unit and charges a bootstrap capacitor for supplying power to the high voltage unit when the high voltage is output, when the ground voltage is output; and a high voltage cut-off unit that cuts off the high voltage when the high voltage is output so that the high voltage is not applied to the charge enable unit, and includes a first terminal electrically connected to the charge enable unit and a second terminal electrically connected to the high voltage unit.

Abstract: An electrostatic discharge (ESD) protection element includes a first diode, a second diode, and a poly resistor. The first diode is connected between a first voltage and an input/output (I/O) pad. The second diode is connected between the I/O pad and a second voltage. The poly resistor is formed on the second diode.

Abstract: A method of forming a field effect transistor (FET) includes: forming a drift region comprising a stack of alternating conductivity type silicon layers; forming a drain region of a first conductivity type extending into the stack of alternating conductivity type silicon layers; forming a trench gate extending into the stack of alternating conductivity type silicon layers, the trench gate having a non-active sidewall and an active sidewall being perpendicular to one another; and forming a body region of a second conductivity type adjacent to the active sidewall of the trench gate, wherein the trench gate and the drain region are formed such that the non-active sidewall of the trench gate faces the drain region.

Abstract: A high voltage semiconductor device includes a source region of a first conductivity type having an elongated projection with two sides and a rounded tip in a semiconductor substrate. A drain region of the first conductivity type is laterally spaced from the source region in the semiconductor substrate. A gate electrode extends along the projection of the source region on the semiconductor substrate between the source and drain regions. Top floating regions of a second conductivity type are disposed between the source and drain regions in the shape of arched stripes extending along the rounded tip of the projection of the source region. The top floating regions are laterally spaced from one another by regions of the first conductivity type to thereby form alternating P-N regions along the lateral dimension.

Abstract: Contoured solid polycrystalline superabrasive material such as twist drill tips and endmill flank segments can be formed by preparing a precursor mold having a plurality of shaped openings each corresponding to a predetermined shape. A specially prepared charge feed can be placed into the shaped openings to form a charged precursor. The charge feed can include a substantially homogeneous mixture of superabrasive source particulates, sintering binder, and optional inorganic bonding medium. A loaded reaction cup-assembly including the charged precursor can be subjected to a pressure, temperature and time sufficient for sintering and formation of the contoured polycrystalline superabrasive material. Reduced finishing steps and increased tailorability of grade and quality of final polycrystalline products can be readily achieved.

Abstract: Disclosed is an indoor unit of an air conditioner, in which discharge units respectively provided on upper and lower portions of the indoor unit have an improved discharge structure such that the discharge units are interchangeable, to increase cooling efficiency regardless of installation position of the indoor unit. The indoor unit includes a cabinet; a first discharge unit being detachably provided on the cabinet and configured to discharge air in a forward direction; and a second discharge unit separated from the first discharge unit, being detachably provided on the cabinet and configured to discharge air in the oblique direction, the first discharge unit and the second discharge unit being interchangeable according to a height of a position at which the cabinet is installed. The indoor unit of the air conditioner sets the optimum direction of discharged air, thus increasing the cooling efficiency of an indoor space.

Abstract: A method of providing a push service to an AT and a push server apparatus using the same to facilitate a data receiving service comprising reception of paging messages at the AT in a mobile communication system for high-speed data transmission are provided. The mobile communication system comprises at least one DLR for allocating a UATI to the AT when a communication is connected to the AT, a home DLR for storing the ID of the AT with respect to the identification information of the DLR, a PDSN for establishing a PPP session with the AT, a DNS, and a push server for buffering push data for the AT received from a CN and requesting paging of the AT for push data transmission to the AT from which the PPP session has been terminated.

Abstract: The present invention relates to an apparatus and method for location based call signal conversion in a wireless communication network. The location based call signal conversion apparatus comprises an LBS (Location Based Service) server that provides location information on user terminals, and a call signal conversion server that converts the called signal to anyone called terminal on the called target terminal list that has been set up according to the current location of said called user terminal if a call connection request to a receiving user terminal from a sending user terminal is sensed among said user terminals, and if conditions for call signal conversion are satisfied according to the location and state of said called user terminal.

Abstract: A high-voltage integrated circuit includes a low-voltage circuit region having a plurality of semiconductor devices, which operate with respect to a ground voltage, a high-voltage circuit region having a plurality of semiconductor devices, which operate with respect to a voltage that varies from the ground voltage to a high voltage, a junction termination and a first isolation region electrically isolating the low-voltage circuit region from the high-voltage circuit region, a high-voltage resistant diode formed between the low-voltage circuit region and the high-voltage circuit region, and a second isolation region surrounding the high-voltage resistant diode and electrically isolating the high-voltage resistant diode from the low-voltage circuit region and the high-voltage circuit region.

Abstract: In one embodiment, a power integrated circuit device is provided. The power integrated circuit device includes a high-side power switch having a high voltage transistor and a low voltage transistor. The high voltage transistor has a gate, a source, and a drain, and is capable of withstanding a high voltage applied to its drain. The low voltage transistor has a gate, a source, and a drain, wherein the drain of the low voltage transistor is connected to the source of the high voltage transistor and the source of the low voltage transistor is connected to the gate of the high voltage transistor, and wherein a control signal is applied to the gate of the low voltage transistor from the power integrated circuit device.