Abstract: The present disclosure relates to a non-contact switch. More particularly, the non-contact switch includes a button which is disposed at a predetermined position of a housing and operated by an external pressure while being formed, at one end portion thereof, with a magnetic substance; a magnetic field sensor device which is accommodated in the housing to face the magnetic substance and generates an induced voltage depending on an interval between the magnetic field sensor device and the magnetic substance; and a semiconductor device which is driven by the induced voltage generated at the magnetic field sensor device to switch power supplied from a separate battery to a separate load.

Abstract: Provided is a method of detecting a concentrated address of a semiconductor device using an n-bit address. The method includes dividing the n-bit address into k groups, wherein each of n and k is an integer equal to or greater than 2, for each group of the k groups, detecting one or more concentrated sub addresses corresponding to the group, and generating at least one concentrated address by combining the one or more concentrated sub addresses for the k groups.

Abstract: Disclosed is an apparatus for processing substrate which prevents a plasma discharge from being transferred to a substrate so as to minimize damages on the substrate and also minimize deterioration in quality of a thin film deposited on the substrate, wherein the apparatus may include a process chamber for providing a reaction space, and a gas distribution module for dissociating processing gas by the use of plasma, and distributing the dissociated processing gas onto a substrate, wherein the gas distribution module may include a lower frame having a plurality of electrode inserting portions, an upper frame having a plurality of protruding electrodes and processing gas distribution holes, and an insulating plate having a plurality of electrode penetrating portions.

Abstract: Tunnel insulation layer structures and methods of manufacturing the same are disclosed. The tunnel insulation layer structures may include a first tunnel insulation layer, a second tunnel insulation layer, a third tunnel insulation layer, a fourth tunnel insulation layer and a fifth tunnel insulation layer. The first tunnel insulation layer on a substrate has a first band gap energy. The second tunnel insulation layer on the first tunnel insulation layer has a second band gap energy which is lower than the first band gap energy. The third tunnel insulation layer on the second tunnel insulation layer has a third band gap energy which is higher than the second band gap energy. The fourth tunnel insulation layer on the third tunnel insulation layer has a fourth band gap energy which is lower than the third band gap energy. The fifth tunnel insulation layer on the fourth tunnel insulation layer has a fifth band gap energy which is higher than the fourth band gap energy.

Abstract: The present invention relates to a coring system considering a tilt of a coring part and a method of compensating for a depth of a coring part using the same. A coring system according to the present invention includes: a coring part with a core to be filled with an object to be cored; a driving unit controlling upward/downward movement of the coring part; a rope connecting the coring part with the driving unit; and a tilt meter measuring a tilt of the coring part.

Abstract: According to example embodiments, a semiconductor device includes horizontal patterns stacked on a substrate. The horizontal patterns define an opening through the horizontal patterns. A first core pattern is in the opening. A second core pattern is in the opening on the first core pattern. A first active pattern is between the first core pattern and the horizontal patterns. A second active pattern containing a first element is between the second core pattern and the horizontal patterns. The second active pattern contains the first element at a higher concentration than a concentration of the first element in the second core pattern.

Abstract: A message processing method and an electronic device for supporting the same are provided. The electronic device includes a communication interface configured to receive a message including a plurality of pages, and a control module configured to process the received message, wherein, if undefined data exists among data contained in a specific page of the plurality of pages, the control module combines at least a part of data contained in a next page that is sequential to the specific page with the undefined data.

Abstract: The present invention concerns a method of processing marine data and a processing apparatus for the same. The processing method according to the present invention comprises obtaining a per-profile initial total magnetic anomaly from raw data; obtaining a filtered total magnetic anomaly by filtering out a high-frequency component from the initial total magnetic anomaly; obtaining a reference corrected total magnetic anomaly by correcting the filtered total magnetic anomaly with respect to a reference total magnetic anomaly; and showing a per-profile total magnetic anomaly using the reference corrected total magnetic anomaly.

Abstract: The present invention concerns a method of processing marine gravity data and a processing apparatus for the same. According to the present invention, the processing method comprises obtaining an initial free-air anomaly per profile from raw data; obtaining a filtered free-air anomaly by filtering high-frequency components from the initial free-air anomaly; shifting free-air anomaly by correcting the filtered free-air anomaly based on a reference free-air anomaly; and showing a per-profile free-air anomaly using the reference corrected free-air anomaly.

Abstract: A partial chip and a system including the partial chip are provided. The partial chip includes a memory cell array and a signal control circuit. The memory cell array includes a pass region and a fail region. The signal control circuit is configured to generate second data corresponding to first data to be output from the fail region.

Abstract: A vertical memory device including a substrate including first regions and a second region; a plurality of channels in the first regions, the plurality of channels extending in a first direction substantially perpendicular to a top surface of the substrate; a charge storage structure on a sidewall of each channel in a second direction substantially parallel to the top surface of the substrate; a plurality of gate electrodes in the first regions, the plurality of gate electrodes arranged on a sidewall of the charge storage structure and spaced apart from each other in the first direction; and a plurality of supporters in the second region, the plurality of supporters spaced apart from each other in a third direction substantially perpendicular to the first direction and the second direction, the plurality of supporters contacting a sidewall of at least one gate electrode.

Abstract: Disclosed is an atmospheric pressure plasma jet device for use in a variety of applications. The disclosed system can include a conduit tubing array that includes multiple individual tubes configured in a honeycomb structure. By altering the linear velocity of the system's gas source, the system can produce multiple non-thermal atmospheric plasma jets that can interact in such a way as to create a single plasma jet as opposed to multiple collimated plasma jets. The single jet formed by the interaction of the multiple conduits can exhibit an increased optical intensity and energy compared to either a plasma jet emitted from a single conduit or well-collimated plasma jets emitted from multiple conduits.

Abstract: A fusing unit and an image forming apparatus to form an image on a recording medium including a fusing unit are provided. The image forming apparatus includes a heating member having a surface divided into a plurality of heating regions and heating the recording medium, and a pressurizing member to apply pressure to the recording medium, the fusing unit fusing the image to the recording medium by applying heat and pressure to the recording medium, a driving unit to supply rotational force to the pressurizing member, and a power supply to supply power to the heating member and the driving unit, wherein the heating regions have different heating values per unit area. The image forming apparatus prevents overheating of a paper-contact heating region without idling the fusing unit in order to radiate heat accumulated in the paper-contact heating region.

Abstract: Methods of fabricating vertical memory devices are provided including forming a plurality of alternating insulating layers and sacrificial layers on a substrate; patterning and etching the plurality of insulating layer and sacrificial layers to define an opening that exposes at least a portion of a surface of the substrate; forming a charge trapping pattern and a tunnel insulating pattern on a side wall of the opening; forming a channel layer on the tunnel insulating layer on the sidewall of the opening, the channel layer including N-type impurity doped polysilicon; forming a buried insulating pattern on the channel layer in the opening; and forming a blocking dielectric layer and a control gate on the charge trapping pattern of one side wall of the channel layer.

Abstract: Disclosed are a medical multilayer film and use thereof. More specifically, disclosed are a medical multilayer film including: an outer layer comprising a propylene polymer selected from the group consisting of a polypropylene, a propylene copolymer and a combination thereof, an intermediate layer comprising 10 to 60% by weight of a propylene polymer selected from the group consisting of a polypropylene, a propylene copolymer and a combination thereof and 40 to 90% by weight of a thermoplastic elastomer, and an inner layer comprising 60 to 80% by weight of a propylene polymer selected from the group consisting of a polypropylene, a propylene copolymer and a combination thereof, 10 to 30% by weight of polyethylene, and 1 to 10% by weight of a thermoplastic elastomer, and use thereof.

Abstract: The present invention relates to a coring system and a determining method that can determine whether accurate coring was achieved. A coring system according to the present invention includes: a coring part with a core to be filled with an object to be cored; a driving unit controlling upward/downward movement of the coring part; a rope connecting the coring part with the driving unit; and a tensiometer measuring tension in the rope.

Abstract: The present invention relates to a coring system considering a tilt of a coring part and a method of compensating for a depth of a coring part using the same. A coring system according to the present invention includes: a coring part with a core to be filled with an object to be cored; a driving unit controlling upward/downward movement of the coring part; a rope connecting the coring part with the driving unit; and a tilt meter measuring a tilt of the coring part.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes insulation layers and gate electrodes alternately stacked on a substrate, a vertical channel vertically passing through the insulation layers and the gate electrodes, and a threshold voltage controlling insulation layer, a tunnel insulation layer and a charge storage layer disposed between the vertical channel and the gate electrodes, wherein the threshold voltage controlling insulation layer is disposed between the charge storage layer and the vertical channel and including a material configured to suppress an inversion layer from being formed in the vertical channel.

Abstract: A semiconductor device includes a channel region extending in a vertical direction perpendicular to a substrate and having a nitrogen concentration distribution, a plurality of gate electrodes arranged on a side wall of the channel region and separated from each other in a vertical direction, and a gate dielectric layer disposed between the channel region and the gate electrodes. The nitrogen concentration distribution has a first concentration near an interface between the channel region and the gate dielectric layer.

Abstract: Provided is a method for assessing image quality using quantization codes, which includes: filtering an original image and a distorted image; generating phase quantization codes from the filtering result; calculating a Hamming difference between the phase quantization code of the original image and the phase quantization code of the distorted image; and assessing image quality of the distorted image by using the calculated Hamming difference. According to the present disclosure, since pixel values of the original image and the distorted image are mapped onto a quantized complex plane and then binary code operation is performed, it is possible to easily implement image quality assessing hardware and also ensure excellent image quality assessing performance.