Abstract: An electronic device includes: a memory device; a nonvolatile memory configured to store a plurality of first configuration parameters respectively corresponding to operating voltages of the memory device and a plurality of second configuration parameters respectively corresponding to operating temperatures of the memory device; and a memory controller configured to: determine a value of a third configuration parameter corresponding to an operating voltage of the memory device among the plurality of first configuration parameters stored in the nonvolatile memory without performing a training operation, determine a value of a fourth configuration parameter corresponding to an operating temperature of the memory device among the plurality of second configuration parameters stored in the nonvolatile memory without performing the training operation, and drive the memory device according to the determined values of the third and the fourth configuration parameters.

Abstract: A display device may include a display panel, an input sensing unit, and an alignment structure. The display panel may include a sealing member. The input sensing unit may be disposed on the display panel. The input sensing unit may include first-type sensor electrodes directly contacting a face of a first insulator of the display device, a first-type connector electrically connecting the first-type sensor electrodes, second-type sensor electrodes directly contacting the face of the first insulator of the display device, and a second-type connector electrically connecting the second-type sensor electrodes. The alignment structure may overlap the sealing member and may include a transparent member that directly contacts the face of the first insulator of the display device.

Abstract: The present invention relates to a method of managing biometric information and, more particularly, a method of managing biometric information being capable of preventing the use of a sensor module of which an expiration date has expired, or a defective sensor module by determining the validity of a sensor module of a continuous biometric information measuring device on the basis of the generation date of sensor usage information or production lot information received from the continuous biometric information measuring device and preventing a reuse or a shared use of the sensor module on the basis of user information provided in a measurement message received from the continuous biometric information measurement device.

Abstract: The present invention relates to a method for preparing a graft copolymer including polymerizing a conjugated diene-based monomer to prepare a small-size conjugated diene-based polymer; enlarging the small-size conjugated diene-based polymer to prepare a large-size conjugated diene-based polymer; and polymerizing the small-size conjugated diene-based polymer, the large-size conjugated diene-based polymer, an aromatic vinyl-based monomer and a vinyl cyan-based monomer to prepare a graft copolymer, wherein a weight ratio of the small-size conjugated diene-based polymer and the large-size conjugated diene-based polymer is 10:90 to 40:60 in preparing the graft copolymer.

Abstract: A display device may include a display panel, an input sensing unit, and an alignment structure. The display panel may include a sealing member. The input sensing unit may be disposed on the display panel. The input sensing unit may include first-type sensor electrodes directly contacting a face of a first insulator of the display device, a first-type connector electrically connecting the first-type sensor electrodes, second-type sensor electrodes directly contacting the face of the first insulator of the display device, and a second-type connector electrically connecting the second-type sensor electrodes. The alignment structure may overlap the sealing member and may include a transparent member that directly contacts the face of the first insulator of the display device.

Abstract: An antenna module includes a fan-out semiconductor package including an IC, an encapsulant encapsulating at least a portion of the IC, a core member having a first side surface facing the IC or the encapsulant, and a connection member including at least one wiring layer electrically connected to the IC and the core member and at least one insulating layer; and an antenna package including a plurality of first directional antenna members configured to transmit or receive a first RF signal. The fan-out semiconductor package further includes at least one second directional antenna member disposed on a second side surface of the core member opposing the first side surface of the core member, stood up from a position electrically connected to at least one wiring layer, and configured to transmit or receive a second RF signal.

Abstract: A method for operating an electronic device according to an embodiment of the present invention may comprise: if an occurrence of a notification is detected, determining an application related to the notification or a keyword extractable from the notification; determining whether feedback of a user for the notification occurs; and storing preference information of the user for the application or the keyword based on the feedback. Also, other embodiments are possible.

Abstract: A touch sensor includes a base layer, electrode units, and loop-shaped first lines. The electrode units are disposed on the base layer. The electrode units are arranged in a first direction and a second direction crossing the first direction. The loop-shaped first lines are in a same layer as the electrode units. The loop-shaped first lines are disposed between some of the electrode units, which are adjacent in the second direction. The loop-shaped first lines include resistance lines extending in the first direction and connection lines extending in the second direction. Some of the resistance lines, which are adjacent in the second direction, are connected by a connection line among the connection lines. The connection lines are spaced apart from each other in the first direction.

Abstract: The present invention relates to a silicon-based anode active material and a method for manufacturing the same. The silicon-based anode active material according to an embodiment of the present invention comprises: particles comprising silicon and oxygen combined with the silicon, and having a carbon-based conductive film coated on the outermost periphery thereof; and boron doped inside the particles, wherein with respect to the total weight of the particles and the doped boron, the boron is included in the amount of 0.01 weight % to 17 weight %, and the oxygen is included in the amount of 16 weight % to 29 weight %.

Abstract: The present invention relates to a silicon-based anode active material and a method of fabricating the same. The silicon-based anode active material according to an embodiment of the present invention comprises: particles comprising silicon and oxygen combined with the silicon, wherein a carbon-based conductive layer is coated with on outermost surface of the particles; and phosphorus doped in the particles, wherein a content of the phosphorus with respect to a total weight of the particles and the phosphorus doped in the particles have a range of 0.01 wt % to 15 wt %, and a content of the oxygen has a range of 9.5 wt % to 25 wt %.

Abstract: An antenna module includes a connection member, an integrated circuit (IC), a dielectric layer, antenna members, feed vias, and a plating member. The connection member includes one or more wiring layer(s) and insulating layer(s). The IC is disposed on one surface of the connection member and is electrically connected to the wiring layer(s). The dielectric layer is disposed on another surface of the connection member. The antenna members are disposed in the dielectric layer, and the feed vias are disposed in the dielectric layer so that each has one end electrically connected to a corresponding antenna member and the other end electrically connected to a corresponding one of the wiring layer(s). The plating member is disposed in the dielectric layer to surround side surfaces of the feed vias. The dielectric layer has a dielectric constant Dk greater than that of at least one insulating layer.

Abstract: Methods, systems, and devices are disclosed for implementing semiconductor memory using variable resistance elements for storing data. In one aspect, an electronic device is provided to comprise a semiconductor memory unit including: a substrate; an interlayer dielectric layer disposed over the substrate; and a variable resistance element including a seed layer formed over the interlayer dielectric layer, a first magnetic layer formed over the seed layer, a tunnel barrier layer formed over the first magnetic layer, and a second magnetic layer formed over the tunnel barrier layer, wherein the seed layer includes a conductive material having a metallic property and an oxygen content of 1% to approximately 10%.

Abstract: A method and apparatus for storing a telephone number in a portable terminal. The method includes the steps of providing a user with a name input request message; determining whether or not the inputted name exists in a phone book list of the portable terminal; and generating a new entry including the inputted name and its associated telephone number and adding the new entry to the phone book list when the inputted name does not exist in the phone book list.

Abstract: An antenna module includes a fan-out semiconductor package including an IC, an encapsulant encapsulating at least a portion of the IC, a core member having a first side surface facing the IC or the encapsulant, and a connection member including at least one wiring layer electrically connected to the IC and the core member and at least one insulating layer; and an antenna package including a plurality of first directional antenna members configured to transmit or receive a first RF signal. The fan-out semiconductor package further includes at least one second directional antenna member disposed on a second side surface of the core member opposing the first side surface of the core member, stood up from a position electrically connected to at least one wiring layer, and configured to transmit or receive a second RF signal.

Abstract: The present invention relates to an ABS graft copolymer, a method of preparing the same, and a thermoplastic resin composition including the same. More specifically, when an ABS graft copolymer is prepared using emulsion polymerization, a phosphate ester-based reactive emulsifier capable of acting as a metal deactivator is added, thereby reducing the amount of undesired residues remaining in the ABS graft copolymer latex. As a result, thermal stability may be improved without adding a heat stabilizer. In addition, compatibility between the ABS graft copolymer and the aromatic vinyl compound-vinyl cyanide compound copolymer may be improved by the phosphate ester-based reactive emulsifier. Therefore, a final molded part having improved impact resistance, e.g., increased impact strength, and having improved appearance quality, e.g., excellent whiteness, while having excellent thermal stability may be prepared.

Abstract: The present disclosure relates to C-glycoside derivatives having a fused phenyl ring or pharmaceutical acceptable salts thereof, a method for preparing the same, a pharmaceutical composition comprising the same, a use thereof and a method for dual inhibition of SGLT1 and SGLT2 using the same. A novel compound of the present disclosure has a dual inhibitory activity against SGLT1 and SGLT2, thus being valuably used as a diabetes therapeutic agent.

Abstract: The present invention relates to a heat-resistant resin and a method of preparing the same. More particularly, the present invention relates to a heat-resistant resin including 100 parts by weight of a styrene based resin and 0.5 to 5 parts by weight of silica having a contact angle of 10 to 60° and an average particle diameter of 0.1 nm or more and 100 nm or less, a method of preparing the same and a heat-resistant resin composition including the same. In accordance with the present invention, provided are a heat-resistant resin having a low moisture content and a small content of fine particles while having heat resistance equal to or higher than conventional resins and, accordingly superior cohesion, a method of preparing the same, and a heat-resistant resin composition including the same.

Abstract: Provided are a method for preparing a conjugated diene-based polymer and a method for preparing a graft copolymer including the same. The method for preparing a conjugated diene-based polymer includes enlarging a first conjugated diene-based polymer in multiple stages to prepare a second conjugated diene-based polymer, wherein the multi-stage enlargement includes a primary enlargement stage and a secondary enlargement stage, and a weight ratio of acids added in the primary enlargement stage and the secondary enlargement stage is 70:30 to 90:10. A graft copolymer prepared by the above-described method can be used to form a thermoplastic resin molded article excellent in all of plating characteristics, mechanical properties, surface characteristics, colorability, and processability.

Abstract: Provided is an anode active material for a secondary battery and a method of fabricating the anode active material. A silicon-based active material composite according to an embodiment of the inventive concept includes silicon and silicon oxide obtained by oxidizing at least a part of the silicon, and an amount of oxygen with respect to a total weight of the silicon and the silicon oxide is restricted to 9 wt % to 20 wt %.

Abstract: Provided are P-type semiconductor layer, P-type multilevel element, and manufacturing method for the element. The P-type multilevel element comprises a gate electrode, an active structure overlapping the gate electrode, a gate insulating layer disposed between the gate electrode and the active structure, and source and drain electrodes electrically connected to both ends of the active structure, respectively. The active structure has a first P-type active layer, a second P-type active layer, and a barrier layer disposed between the first P-type active layer and the second P-type active layer. A threshold voltage for forming a channel in the first P-type active layer and a threshold voltage for forming a channel in the second P-type active layer have different values.