Abstract: The present invention relates to a silicon anode active material capable of high capacity and high output, and a method for fabricating the same. A silicon anode active material according to an embodiment of the present invention includes a silicon core including silicon particles; and a double clamping layer having a silicon carbide layer on the silicon core and a silicon oxide layer between the silicon core and the silicon carbide layer.

Abstract: The present invention relates to a method for preparing a graft copolymer, which includes polymerizing a first conjugated diene-based polymer, a second conjugated diene-based polymer, an aromatic vinyl-based monomer and a vinyl cyan-based monomer, wherein particle size distribution of the first conjugated diene-based polymer is 0.346 to 0.404, and particle size distribution of the second conjugated diene-based polymer is 0.196 to 0.304, a graft copolymer and a thermoplastic resin molded article.

Abstract: A method and apparatus for storing a telephone number in a portable terminal. The method includes the steps of providing a user with a name input request message; determining whether or not the inputted name exists in a phone book list of the portable terminal; and generating a new entry including the inputted name and its associated telephone number and adding the new entry to the phone book list when the inputted name does not exist in the phone book list.

Abstract: Disclosed is an authentication apparatus using a public key encryption algorithm. An apparatus according to an embodiment generates a first instant public key through a random number generation process in response to an electronic signature generation request corresponding to a message. Further, the apparatus calculates and uses a first instant private key making a pair with the first instant public key, using the first instant public key.

Abstract: Disclosed are a rubber polymer, a graft copolymer, methods of preparing the same, and an impact and heat resistant resin composition. According to the present invention, provided are rubber latex and a graft copolymer which may realize a product having superior impact resistance, heat resistance and chemical resistance by adding a specific crosslinking regulator to the rubber polymer, methods of preparing the same, and an impact and heat resistant resin composition.

Abstract: A display device may include a display panel, an input sensing unit, and an alignment structure. The display panel may include a sealing member. The input sensing unit may be disposed on the display panel. The input sensing unit may include first-type sensor electrodes directly contacting a face of a first insulator of the display device, a first-type connector electrically connecting the first-type sensor electrodes, second-type sensor electrodes directly contacting the face of the first insulator of the display device, and a second-type connector electrically connecting the second-type sensor electrodes. The alignment structure may overlap the sealing member and may include a transparent member that directly contacts the face of the first insulator of the display device.

Abstract: Methods, systems, and devices are disclosed for implementing semiconductor memory using variable resistance elements for storing data. In one aspect, an electronic device is provided to comprise a semiconductor memory unit including: a substrate; an interlayer dielectric layer disposed over the substrate; and a variable resistance element including a seed layer formed over the interlayer dielectric layer, a first magnetic layer formed over the seed layer, a tunnel barrier layer formed over the first magnetic layer, and a second magnetic layer formed over the tunnel barrier layer, wherein the seed layer includes a conductive material having a metallic property and an oxygen content of 1% to approximately 10%.

Abstract: A touch sensing unit includes a first touch electrode disposed in a touch sensor area. A second touch electrode is disposed in the touch sensor area. A first touch line is disposed in a touch peripheral area. The first touch line is electrically connected to the first touch electrode. The touch peripheral area is disposed on a periphery of the touch sensor area. A second touch line is disposed in the touch peripheral area. The second touch line is electrically connected to the second touch electrode. The touch peripheral area includes first and second regions. In the first region, a width of the first touch line is smaller than a width of the second touch line. In the second region, the width of the first touch line is equal to the width of the second touch line.

Abstract: Provided is a negative active material and a lithium secondary battery including the negative active material. The negative active material for a secondary battery includes silicon particles, wherein circularities of the particles are determined by equation 1 below, and the circularities are 0.5 or greater and 0.9 or less, Circularity=2(pi×A)1/2/P??[Equation 1] where A denotes a projected area of the silicon particle that is two-dimensionally projected, and P denotes a circumferential length of the silicon particle that is two-dimensionally projected.

Abstract: An outdoor unit for an air conditioner is provided, which includes a case, a plurality of path portions separated from each other in the case and having a same discharge port, electronic units arranged on the plurality of path portions, and an air circulator arranged on the discharge port of the plurality of path portions to compulsorily circulate air in the case to an outside of the case through the plurality of path portions of the case.

Abstract: A method for fabricating an electronic device including a semiconductor memory includes: forming a variable resistance element over a substrate, the variable resistance element including a metal-containing layer and an MTJ (Magnetic Tunnel Junction) structure which is located over the metal-containing layer and includes a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer; forming an initial spacer containing a metal over the variable resistance element; performing an oxidation process to transform the initial spacer into a middle spacer including an insulating metal oxide; and performing a treatment using a gas or plasma including nitrogen and hydrogen to transform the middle spacer produced by the oxidation process into a final spacer including an insulating metal nitride or an insulating metal oxynitride.

Abstract: An antenna module includes: an antenna substrate including an antenna pattern; a semiconductor package disposed on a lower surface of the antenna substrate, electrically connected to the antenna substrate, and having at least one semiconductor chip embedded therein; and an electronic component disposed on the lower surface or a side surface of the antenna substrate, electrically connected to the antenna substrate, and spaced apart from the semiconductor package by a predetermined distance. The electronic component has a thickness greater than that of the semiconductor chip.

Abstract: The present invention relates to a method for preparing silicon-based active material particles for a secondary battery and silicon-based active material particles. The method for preparing silicon-based active material particles according to an embodiment of the present invention comprises the steps of: providing silicon powder; dispersing the silicon powder into an oxidant solvent to provide a mixture prior to grinding; fine-graining the silicon powder by applying mechanical compression and shear stress to the silicon powder in the mixture prior to grinding to produce silicon particles; producing a layer of chemical oxidation on the fine-grained silicon particles with the oxidant solvent while applying mechanical compression and shear stress to produce silicon-based active material particles; and drying the resulting product comprising the silicon-based active material particles to yield silicon-based active material particles.

Abstract: Image processing devices and methods thereof use different color conversion data of an image obtained in a black-and-white mode under a low illuminance condition than that of an image obtained in a color mode.

Abstract: Methods, systems, and devices are disclosed for implementing semiconductor memory using variable resistance elements for storing data. In one aspect, an electronic device is provided to comprise a semiconductor memory unit including: a substrate; an interlayer dielectric layer disposed over the substrate; and a variable resistance element including a seed layer formed over the interlayer dielectric layer, a first magnetic layer formed over the seed layer, a tunnel barrier layer formed over the first magnetic layer, and a second magnetic layer formed over the tunnel barrier layer, wherein the seed layer includes a conductive material having a metallic property and an oxygen content of 1% to approximately 10%.

Abstract: A method and apparatus for compositing images in a portable terminal are provided. The method includes acquiring a plurality of images, displaying a plurality of candidate composition regions in each of the plurality of images, selecting a composition region of each of the plurality of images based on a user input, and compositing the plurality of images by using the composition regions of the plurality of images.

Abstract: Provided is an anode active material for a secondary battery and a method of fabricating the anode active material. A silicon-based active material composite according to an embodiment of the inventive concept includes silicon and silicon oxide obtained by oxidizing at least a part of the silicon, and an amount of oxygen with respect to a total weight of the silicon and the silicon oxide is restricted to 9 wt % to 20 wt %.

Abstract: A material feeding apparatus is disclosed. An apparatus for removing a surface oxide of a metal material and feeding the metal material to a melting furnace, according to an embodiment of the present disclosure, includes: a housing including a material dropping chamber for feeding and discharging the metal material and a material etching chamber for performing a plasma etching process; and a pretreatment casing configured to reciprocate between the material dropping chamber and the material etching chamber in the housing, wherein the pretreatment casing receives the metal material from the material dropping chamber to store the metal material, moves to the material etching chamber to plasma-etch a surface oxide layer of the stored metal material, and then returns to the material dropping chamber to drop the etched metal material into the melting furnace.

Abstract: The present invention relates to a method for preparing silicon-based active material particles for a secondary battery and silicon-based active material particles. The method for preparing silicon-based active material particles according to an embodiment of the present invention comprises the steps of: providing silicon powder; dispersing the silicon powder into an oxidant solvent to provide a mixture prior to grinding; fine-graining the silicon powder by applying mechanical compression and shear stress to the silicon powder in the mixture prior to grinding to produce silicon particles; producing a layer of chemical oxidation on the fine-grained silicon particles with the oxidant solvent while applying mechanical compression and shear stress to produce silicon-based active material particles; and drying the resulting product comprising the silicon-based active material particles to yield silicon-based active material particles.

Abstract: An electronic device including a semiconductor memory. The semiconductor memory may include a variable resistance element. The variable resistance element may include a first magnetic layer formed over a first auxiliary layer, a tunnel barrier layer formed over the first magnetic layer, a second magnetic layer formed over the tunnel barrier layer, a second auxiliary layer formed over the second magnetic layer, and a hard mask formed over the second auxiliary layer. Side surfaces of the first magnetic layer may be substantially aligned with side surfaces of the first auxiliary layer, and the side surfaces of the first magnetic layer may deviate from side surfaces of the hard mask.