Abstract: The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit controlling rotation and elevation of the dual crucible, and a pull-up drive unit disposed above the dual crucible and pulling up a seed crystal dipped in the molten silicon to produce a silicon ingot. The dual crucible has a container shape open at an upper side thereof, and includes a graphite crucible having an inclined surface connecting an inner bottom and an inner wall, and a quartz crucible inserted into the graphite crucible and receiving the raw silicon charged into the dual crucible.

Abstract: According to example embodiments, a memory device includes a substrate, a channel region on the substrate, a plurality of gate electrode layers stacked on each other on the substrate, and a plurality of contact plugs. The gate electrode layers are adjacent to the channel region and extend in one direction to define a pad region. The gate electrode layers include first and second gate electrode layers. The contact plugs are connected to the gate electrode layers in the pad region. At least one of the contact plugs is electrically insulated from the from the first gate electrode layer and electrically connected to the second gate electrode layer by penetrating through the first gate electrode layer.

Abstract: A nonvolatile memory device includes: a channel layer protruding perpendicular to a surface of a substrate; a tunnel insulation layer formed on a surface of the channel layer; a stack structure, in which a plurality of floating gate electrodes and a plurality of control gate electrodes are alternately formed along the channel layer; and a charge blocking layer interposed between each floating gate electrode, of the plurality of floating gate electrodes, and each control gate electrode of the plurality of control gate electrodes, wherein the floating gate electrode includes a first floating gate electrode between two control gate electrodes and a second floating gate electrode positioned in the lowermost and uppermost parts of the stack structure and having a smaller width in a direction parallel to the substrate than the first floating gate electrode.

Abstract: Provided are a low carbon additive for a warm-mix asphalt (WMA) mixture, in which vegetable wax based on modified palm wax is mixed into polyethylene wax so as to be able to promote high-temperature physical properties of the WMA mixture as well as solve problems on low-temperature physical properties of the WMA mixture, warm-mix asphalt produced using the same, and a method of producing the WMA mixture using the using the warm-mix asphalt. The low carbon additive contains polyethylene wax and vegetable wax at a weight ratio of 20:1 to 1:2. The modified palm wax employs palm wax that melt-reacts with sodium hydroxide (NaOH) and stearic acid (CH3(CH2)16COOH). This low carbon additive enables the WMA mixture to be efficiently produced, and thus makes it possible to reduce heating energy required when the WMA mixture is produced. Thereby, it is possible to remarkably reduce the emission of carbon dioxide that is a principal factor of global warming.

Abstract: Methods and apparatus for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit which is placed on a first electron beam-irradiating region corresponding to the first electron gun and to which powdery raw silicon is fed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun. The unidirectional solidification unit is provided therein with a start block driven in a downward direction to transfer molten silicon in the downward direction and is formed at a lower side thereof with a cooling channel. The start block includes a dummy bar having a silicon button joined to an upper portion of the dummy bar.

Abstract: A graphite crucible for electromagnetic induction-based silicon melting and an apparatus for silicon melting/refining using the same, which performs a melting operation by a combination of indirect melting and direct melting. The crucible is formed of a graphite material and includes a cylindrical body having an open upper part through which a silicon raw material is charged into the crucible, and an outer wall surround by an induction coil, wherein a plurality of first slits are vertically formed through the outer wall and an inner wall of the crucible, and a plurality of second slits are vertically formed from an edge of the disc-shaped bottom of the crucible toward a center of the bottom.

Abstract: Provided is a method of disassembling a photovoltaic module. The method includes: applying heat to the photovoltaic module in an oxidizing atmosphere; removing an insulating protective layer wrapping a photovoltaic cell of the photovoltaic module; and obtaining the photovoltaic cell of the photovoltaic module.

Abstract: A high tension coil spring for a bed mattress having an exposed wiring portion which is formed on the coil spring and works together with a body spring to absorb an external load. A gap A is provided on at least one of upper and lower end wiring portions 14 and 14? so as to define a space in which at least one of turns 16-5 and 16-5? of upper and lower exposed wiring portions 16 and 16? moves upward and downward while the coil spring is being compressed. Frictional noise between the upper and lower end wiring portions and the upper and lower turns 16-5 and 16-5? of upper and lower exposed wiring portions 16 and 16? is fundamentally prevented. The elasticity of the upper and lower exposed wiring portions is increased. The wiring portions move only upward and downward without being displaced or deformed in the lateral direction, thereby increasing longevity.

Abstract: Disclosed herein are a graphite crucible for electromagnetic induction-based silicon melting and an apparatus for silicon melting/refining using the same, which performs a melting operation by a combination of indirect melting and direct melting. The crucible is formed of a graphite material and includes a cylindrical body having an open upper part through which a silicon raw material is charged into the crucible, and an outer wall surrounded by an induction coil, wherein a plurality of slits are vertically formed through the outer wall and an inner wall of the crucible such that an electromagnetic force created by an electric current flowing in the induction coil acts toward an inner center of the crucible to prevent a silicon melt from contacting the inner wall of the crucible.

Abstract: A method of manufacturing a semiconductor device, the method including forming a tunnel insulating layer on an upper surface of a substrate, forming gate patterns on an upper surface of the tunnel insulating layer, forming capping layer patterns on sidewalls of the gate patterns and on the upper surface of the tunnel insulating layer, etching a portion of the tunnel insulating layer that is not covered with the gate patterns or the capping layer patterns to form a tunnel insulating layer pattern, and forming a first insulating layer on the upper surface of the substrate to cover the gate patterns, the capping layer patterns, and the tunnel insulating layer pattern, wherein the first insulating layer has an air gap between the capping layer patterns.

Abstract: A gateway apparatus and a message routing method are provided. The gateway apparatus includes: a network adaptor transmitting and receiving a message through a vehicle network or a diagnosing CAN positioned inside a vehicle; a CAN driver transferring the message received through the network adaptor; a message router routing the message transferred from the CAN driver and filtering valid data of the message; an application invoking a signal routing application to detect validity of data of each signal of the message transferred from the CAN driver and route data of a valid signal; and a CAN diagnostor processing a message of a diagnosing apparatus performing an access through the diagnosing CAN positioned inside the vehicle to control a diagnosing operation.

Abstract: A branching device for enclosing a hybrid fan-out cable the hybrid fan-out cable comprising plural optical cables and power cables, the branching device includes: an enclosure having a first end, through which the hybrid fan-out cable is inserted, and a second end that is opened; and a gasket provided at the second end of the enclosure and having plural through-holes; and a cover thread-coupled to the second end of the enclosure to fasten the gasket to the second end of the enclosure in such a manner that the through-holes are exposed. In the enclosure, the hybrid fan-out cable is branched out into plural individual sub-part cable components, and each of the sub-part cable components is drawn out through one of the through-holes of the gasket to the outside. The gasket is formed from an elastic material which forms a tight seal between the inner peripheral surface of the enclosure and with the outer peripheral surface of each of the sub-part cable components to seal the other end of the enclosure.

Abstract: A method for fabricating a nonvolatile memory device includes forming a stacked structure having a plurality of interlayer dielectric layers and a plurality of sacrificial layers wherein interlayer dielectric layers and sacrificial layers are alternately stacked over a substrate, forming a first hole exposing a part of the substrate by selectively etching the stacked structure, forming a first insulation layer in the first hole, forming a second hole exposing the part of the substrate by selectively etching the first insulation layer, and forming a channel layer in the second hole.

Abstract: In a semiconductor memory device, a plurality of control gates is stacked in a first region and a second region of a substrate. A plurality of interlayer insulating layers is stacked in a portion of the second region of the substrate. Each interlayer insulating layer is formed at the same level as a corresponding one of the control gates. A plurality of sub-control gates is stacked in the first and second regions region of the substrate and interposed between the control gates and the interlayer insulating layers. A common node penetrates the interlayer insulating layers and the sub-control gates.

Abstract: A method of preparing transparent or nontransparent silica aerogel granules. The method includes forming a granular wet gel by spraying a silica sol into alcohol, the silica sol being prepared by mixing a water glass solution or an opacifier-containing water glass solution with an inorganic acid solution, forming a granular alcohol gel through gelation aging and solvent substitution of the granular wet gel in alcohol, hydrophobically modifying the surface of the granular alcohol gel using an organic silane compound, and drying the surface modified gel at ambient pressure or in a vacuum. The method may prepare silica aerogel granules in a short period of time through heat treatment at a relatively low temperature and at ambient pressure or in a vacuum, thereby ensuring excellent economic feasibility, continuity and reliability, suited for mass production.

Abstract: A three-dimensional (3-D) non-volatile memory device includes channel structures each including channel layers stacked over a substrate and extending in a first direction, wherein the channel layers include well regions, respectively, vertical gates located and spaced from each other between the channel structures, and a well pick-up line contacting on the well regions of the channel layers and extending in a second direction crossing the channel structures.

Abstract: A method of manufacturing a semiconductor device, the method including forming a tunnel insulating layer on an upper surface of a substrate, forming gate patterns on an upper surface of the tunnel insulating layer, forming capping layer patterns on sidewalls of the gate patterns and on the upper surface of the tunnel insulating layer, etching a portion of the tunnel insulating layer that is not covered with the gate patterns or the capping layer patterns to form a tunnel insulating layer pattern, and forming a first insulating layer on the upper surface of the substrate to cover the gate patterns, the capping layer patterns, and the tunnel insulating layer pattern, wherein the first insulating layer has an air gap between the capping layer patterns.

Abstract: Disclosed herein is a method of manufacturing inorganic hollow yarns, such as cermets, oxide-non oxide composites, poorly sinterable non-oxides, and the like, at low costs. The method includes preparing a composition comprising a self-propagating high temperature reactant, a polymer and a dispersant, wet-spinning the composition through a spinneret to form wet-spun yarns, washing and drying the wet-spun yarns to form polymer-self propagating high temperature reactant hollow yarns, and heat-treating the polymer-self propagating high temperature reactant hollow yarns to remove a polymeric component from the polymer-self propagating high temperature reactant hollow yarns while inducing self-propagating high temperature reaction of the self-propagating high temperature reactant to form inorganic hollow yarns. The composition comprises 45˜60 wt % of the self-propagating high temperature reactant, 6˜17 wt % of the polymer, 0.1˜4 wt % of the dispersant, and the balance of an organic solvent.

Abstract: The present invention relates to a nitride light emitting diode (LED) package, and more specifically, to a nitride light emitting diode package which can improve light-emitting efficiency by increasing light emitting surface area, reduce operating voltage by simultaneously emitting light from six cells at once, and can increase operating current.

Abstract: A coil spring for a bed mattress. At least one of contact wiring portions 16-5 and 16-5? of the upper and lower exposed wiring portions 16 and 16? which abut to the end wiring portions 14 while the upper and lower exposed wiring portion 16, 16? are being compressed has a contact surface A which is in contact with one corresponding end wiring portion of the end wiring portions 14, whereby frictional noise between the exposed wiring portion 16, 16? and the end wiring portion 14 is prevented. It is possible to consequently remove friction that is created due to contact between the exposed wiring portion and the end wiring portion while the exposed portion is being compressed, thereby preventing noise. The exposed wiring portion and the body wiring portion move only upward and downward without being displaced or deformed in the lateral direction, thereby increasing longevity.