Abstract: A catalyst used to manufacture a biodegradable polyester resin, in particular, an organic titanium catalyst which does not contain a heavy-metal component, and a method of manufacturing a polyester resin using the same. Accordingly, the method of manufacturing a polyester resin can be useful in attaining desired physical properties without using a catalyst harmful to environments and a human body. The biodegradable resin, which can be safely used in the field of applications in which the use of harmful components is a sensitive issue without using the components harmful to environments and a human body during the manufacture of a resin, can be prepared.

Abstract: In a semiconductor memory device, a plurality of control gates is stacked in a first region and a second region of a substrate. A plurality of interlayer insulating layers is stacked in a portion of the second region of the substrate. Each interlayer insulating layer is formed at the same level as a corresponding one of the control gates. A plurality of sub-control gates is stacked in the first and second regions region of the substrate and interposed between the control gates and the interlayer insulating layers. A common node penetrates the interlayer insulating layers and the sub-control gates.

Abstract: Apparatus and method for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber maintaining a vacuum atmosphere; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit placed on a first electron beam-irradiating region corresponding to the first electron gun and in which powdery raw silicon is placed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun and connected to the silicon melting unit via a runner. The unidirectional solidification unit is formed at a lower part thereof with a cooling channel and is provided therein with a start block driven in a downward direction.

Abstract: A resistive memory device Includes word lines stacked on top of one another, at least one first selection line formed over the word lines, a first channel layer passing through the word lines and the first selection line, a first phase change material layer formed in the first channel layer and overlapping the word lines, and a first insulating layer formed in the first channel layer and overlapping the first selection line.

Abstract: A steel plate for linepipes having ultra-high strength and excellent low temperature toughness, and a method for manufacturing the same are disclosed. The steel plate has a strength of 930 MPa or more and excellent toughness even with much smaller amounts of alloying elements than that of conventional steel plates, and a method for manufacturing the same. The steel includes by weight %: 0.03-0.10% C; 0-0.6% Si; 1.6-2.1% Mn; 0-1.0% Cu; 0-1.0% Ni; 0.02-0.06% Nb; 0-0.1% V; 0.1-0.5% Mo; 0-1.0% Cr; 0.005-0.03% Ti; 0.01-0.06% Al; 0.0005-0.0025% B; 0.001-0.006% N; 0-0.006% Ca; 0.02% or less P; 0.005% or less S; and the balance Fe and unavoidable impurities. The microstructure includes at least about 75 area percent of a mixture of bainitic ferrite and acicular ferrite.

Abstract: An apparatus for detecting an in-vehicle network attack, is configured to cumulatively count packets for each device that has a respective ID and is connected to an in-vehicle network bus. The apparatus is configured to cumulate a check value every time the packets are cumulatively counted to calculate a cumulated value, and determine that an attack is conducted when an average cumulated value obtained by dividing the cumulated value by a cumulative counted value does not exceed a first threshold value.

Abstract: Disclosed is a method for selective dealkylation of alkyl-substituted C9+ aromatic compounds using a bimodal porous dealkylation catalyst at a low temperature. The catalyst has a bimodal porous structure including both mesopores and micropores. The catalyst includes a crystalline aluminosilicate and a metal. The catalyst is highly active at a low temperature. According to the method, C9+ aromatic compounds substituted with at least one C2+ alkyl group as by-products formed by xylene production can be selectively dealkylated and converted to BTX, etc. on a large scale within a short time. In addition, the method is an environmentally friendly process entailing reduced waste treatment cost when compared to conventional mesitylene production methods. Therefore, high value-added mesitylene can be separated from low value-added C9+ aromatic compounds at lower cost compared to conventional methods.

Abstract: A light-emitting device includes a semiconductor layer, a light-emitting stack structure formed on a first surface of the semiconductor layer, and a plurality of inverted pyramid structures formed on a second surface of the semiconductor layer opposite to the first surface. Each of the inverted pyramid structures has a sectional area increasing as each of the inverted pyramid structures is more extended in a vertical direction from the second surface.

Abstract: A nonvolatile memory device includes a plurality of channel structures formed over a substrate and including a plurality of interlayer dielectric layers alternately stacked with a plurality of channel layers; first and second vertical gates alternately disposed between the channel structures along one direction crossing with the channel structure and adjoining the plurality of channel layers with a memory layer interposed therebetween; and a pair of first and second word lines disposed over or under the channel structures and extending along the one direction in such a way as to overlap with the first and second vertical gates. The first word line is connected with the first vertical gates and the second word line is connected with the second vertical gates.

Abstract: The present invention relates to a method of manufacturing a mat containing aerogel and to a mat manufactured using this method. A method of manufacturing a mat containing silica aerogel according to an aspect of the invention includes: (S1) producing a wet gel by mixing water glass and alcohol in a reactor; (S2) modifying a surface of the wet gel by adding an organic silane compound and an organic solvent to the reactor and mixing; (S3) separating a upper liquid from a solution in the reactor and impregnating a fibrous matrix with the upper liquid; and (S4) drying the fibrous matrix impregnated with the upper liquid. According to an aspect of the invention, a mat containing silica aerogel can be manufactured using only water glass as raw material, even when applying the drying process in an ambient environment, without using expensive materials or supercritical apparatus.

Abstract: A capacitive touch panel device of a high-sensitivity digital system. The capacitive touch panel device includes a substrate, a display area formed at the center of the substrate, a non-active area formed along the outer periphery of the display area, extending to the end of the substrate, and mounted with a plurality of signal transmitting wire electrodes, two pairs of position sensing main sensor electrodes arranged in a two-dimensional fashion in the display area to display coordinates, a plurality of bridge electrodes interposed between the two pairs of position-sensing main sensor electrodes, an external terminal unit electrically connected to the ends of the plurality of signal transmitting wire electrodes, and a position sensing sub electrode electrically connected to each of the two pairs of position-sensing main sensor electrodes, and arranged in the direction different from the direction wherein the bridge electrodes are connected.

Abstract: There is provided a high-strength steel plate having acicular ferrite and bainite as a main microstructure and an austenite/martensite (M & A) as a second phase under the control of a cooling rate above the austenite transformation temperature. The high-strength steel plate comprises: carbon (C): 0.03 to 0.10 wt %, silicon (Si): 0.1 to 0.4 wt %, manganese (Mn): 1.8 wt % or less, nickel (Ni): 1.0 wt % or less, titanium (Ti): 0.005 to 0.03 wt %, niobium (Nb): 0.02 to 0.10 wt %, aluminum (Al): 0.01 to 0.05 wt %, calcium (Ca): 0.006 wt % or less, nitrogen (N): 0.001 to 0.006 wt %, phosphorus (P): 0.02 wt % or less, sulfur (S): 0.005 wt % or less, and the balance of iron (Fe) and other inevitable impurities.

Abstract: The present invention relates to compounds 1, 1a (S-enantiomer) and 1b (R-enantiomer) of the following formula 1, and a method for preparing the same. [formula 1] The novel compound of the formula 1 is used as an important intermediate for preparing compounds 6, 6a (S-enantiomer) and 6b (R-enantiomer) of the following formula 6, which are 2,2?-binaphthol-3-aldehyde derivatives. Also, the present invention provides a method for preparing the compound of formula 1 with a very safe method at low cost.

Abstract: In a semiconductor memory device, a plurality of control gates is stacked in a first region and a second region of a substrate. A plurality of interlayer insulating layers is stacked in a portion of the second region of the substrate. Each interlayer insulating layer is formed at the same level as a corresponding one of the control gates. A plurality of sub-control gates is stacked in the first and second regions region of the substrate and interposed between the control gates and the interlayer insulating layers. A common node penetrates the interlayer insulating layers and the sub-control gates.

Abstract: A prism sheet, a backlight unit, and a liquid crystal display device, the prism sheet including a transparent substrate; and at least one prism on the transparent substrate, wherein a refractive index (n) and a basic angle (?) of the at least one prism satisfies the following condition: 1?n/sin ??4.

Abstract: A nonvolatile memory device includes: a channel layer protruding perpendicular to a surface of a substrate; a tunnel insulation layer formed on a surface of the channel layer; a stack structure, in which a plurality of floating gate electrodes and a plurality of control gate electrodes are alternately formed along the channel layer; and a charge blocking layer interposed between each floating gate electrode, of the plurality of floating gate electrodes, and each control gate electrode of the plurality of control gate electrodes, wherein the floating gate electrode includes a first floating gate electrode between two control gate electrodes and a second floating gate electrode positioned in the lowermost and uppermost parts of the stack structure and having a smaller width in a direction parallel to the substrate than the first floating gate electrode.

Abstract: The present disclosure relates to the preparation of a polymer composite material for building air conditioning or dehumidification having superior water-adsorbing ability, durability and antibacterial properties by electro spinning. Specifically, the disclosed method for preparing a polymer composite material for building air conditioning or dehumidification includes: (S1) adding a crosslinking agent or a crosslinking agent and a porous filler for conferring durability and antibacterial properties into a hydrophilic polymer solution antibacterial properties to prepare a polymer composite material solution; (S2) electrospinning the polymer composite material solution to prepare a nanofiber sheet; and (S3) crosslinking the nanofiber sheet by heat-treatment.

Abstract: Methods and apparatus for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit which is placed on a first electron beam-irradiating region corresponding to the first electron gun and to which powdery raw silicon is fed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun. The unidirectional solidification unit is provided therein with a start block driven in a downward direction to transfer molten silicon in the downward direction and is formed at a lower side thereof with a cooling channel. The start block includes a dummy bar having a silicon button joined to an upper portion of the dummy bar.

Abstract: Apparatus and method for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber maintaining a vacuum atmosphere; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit placed on a first electron beam-irradiating region corresponding to the first electron gun and in which powdery raw silicon is placed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun and connected to the silicon melting unit via a runner. The unidirectional solidification unit is formed at a lower part thereof with a cooling channel and is provided therein with a start block driven in a downward direction.

Abstract: The present invention relates to a structure of an edge-type back light unit, particularly to a structure comprising a light source receiving part, which receives a light source such as LED formed to the central direction of an optical plate at one side or the other side of the optical plate. The present invention has excellent optical property and has an effect of wide application to various LCDs because it comprises a light source receiving part, which can install a printed circuit board mounting the light source such as LED to an embedded form in an edge-type back light unit.