Abstract: A semiconductor device and a method thereof that maximizes DC and AC parameter properties of a MOS transistor having a buried channel. The device includes a semiconductor substrate having a device separation film, a gate pattern formed over the semiconductor substrate, a well region formed in the semiconductor substrate, the well region including a first doped region formed at a first predetermined depth, a second doped region formed at a second predetermined depth and a third doped region formed at a third predetermined depth, trenches formed at a source/drain region around the gate pattern, and a source/drain formed in the trenches. In accordance with embodiments, the first predetermined depth is lower than the second and third predetermined depths and the third predetermined depth is greater than the second predetermined depth.

Abstract: A semiconductor device and a method for manufacturing the same includes forming a poly-gate including a first poly-gate portion and a second poly-gate portion on and/or over a semiconductor substrate, forming a trench having a predetermined depth in the poly-gate, implanting dopant ions into the entire surface of the semiconductor substrate and the poly-gate including the trench, forming a contact barrier layer to cover a portion of the poly-gate including the trench while exposing an upper surface of the remaining portion of the poly-gate on which a contact will be formed, and forming a contact on the exposed upper surface of the poly-gate.

Abstract: Improved approaches to intelligently refer users of one online media store to another online store are disclosed. The inter-store referral can permit a user of an online media store, such as an online media store that offers digital media assets for purchase, to easily access related information, such as event information, from another online store. According to another aspect, improved approaches to access and present event information are disclosed.

Abstract: Improved approaches to make data available locally at business establishments are disclosed. In one embodiment, data anticipated to be soon to be requested by patrons of a particular business establishment can be pre-loaded to a local server provided at the particular business establishment. By pre-loading data that is anticipated to be soon to be requested by patrons of the particular business establishment, local network access traffic and congestion at the retail establishment can be reduced. The improved approaches are particularly well suited for media content data that is likely to be requested by patrons at business (e.g., retail) establishments. Advantageously, patrons can get rapid download of media content data associated with one or more media items that the patrons have purchased from an online media store.

Abstract: Improved approaches to allow a portable electronic device to dynamically present location-specific information while the portable electronic device is at a predetermined location are disclosed. In one embodiment, the portable electronic device has a display that can display the location-specific information and has wireless capabilities for use in receiving the location-specific information from the server. The location-specific information can, for example, augment other information that is to be presented on the display. In one embodiment, the location-specific information can be information pertaining to a media item being played in an establishment, such as a store, where the portable electronic device is located.

Abstract: Provided are a semiconductor device and a method for manufacturing the same. The semiconductor device may include a substrate having a plurality of isolation areas formed therein, the isolation areas defining an active region, a gate electrode formed on the active region, spacers formed on sides of the gate electrode, a source region formed in the substrate at a side of the spacer formed at a first side of the gate electrode, a drain region formed in the substrate at a side of the spacer formed on a second side of the gate electrode, and lightly doped drain regions formed in the substrate below the spacer.

Abstract: An injection molding apparatus capable of minimizing cracks at the corners of a mold is provided. The injection molding apparatus includes first and second molds that mate with each other to define a molding cavity, a stationary member that supports the first mold, a movable member that supports the second mold and moves backwards and forwards together with the second mold, and a plurality of pressing members installed around the first mold so as to press a periphery of the first mold toward the molding cavity by a pressing force of the movable member when the first mold is mated with the second mold.

Abstract: Provided are a capacitor of a semiconductor device having an increased capacitance within a minimum area, and a fabrication method thereof. The capacitor includes a first electrode on a substrate, a first insulator on the first electrode, a second electrode on the first insulator, a second insulator on the second electrode where the second insulator is in contact with the first insulator, and a third electrode on the second insulator where the third electrode is in contact with the first electrode. In embodiments, the capacitance can be desirably adjusted within a limited area by alternately overlaying electrodes and insulator layers connected at alternating sides to the electrode or insulator layer below, which makes it possible to design the semiconductor device flexibly and maximize the capacitance.

Abstract: Embodiments relate to an ion implantation method wherein a semiconductor substrate is divided into a core region, a high voltage region, and an I/O region. The core region and the I/O region are divided into a PMOS transistor region for forming PMOS transistors and an NMOS transistor region for forming NMOS transistors. The ion implantation method includes performing a first ion implantation process employing a first process condition on the NMOS transistor region of the substrate using a first mask, thus setting threshold voltages for the NMOS transistor region of the I/O region and for the high voltage region at the same time. A second ion implantation process employs a second process condition on the NMOS transistor region of the substrate using a second mask, thus setting a threshold voltage for the core region.

Abstract: A method for forming an LDD structure of a gate electrode of a MOSFET. The gate electrode may be formed by sequentially depositing a gate oxide layer and a poly silicon layer over a semiconductor substrate. A photo resist pattern may be formed over the resultant structure. A gate electrode may be formed by an etch using the photo resist pattern as a mask. An LDD area may be formed by ion implanting a low-concentration dopant using the gate electrode as a mask. After depositing a spacer layer over the upper surface of the substrate, a spacer may be formed by etching. A source/drain area may be formed by ion implanting a high-concentration dopant using the gate electrode and the spacer as a mask. A portion of the gate oxide layer where the gate oxide layer and the LLD area overlap may be removed by performing an etch process over the resultant structure.

Abstract: Embodiments relate to a semiconductor device and a method for manufacturing the same. According to embodiments, a semiconductor device may include an LDD which may include a space having a first width and may be formed in a semiconductor substrate, a channel area which may be formed in the semiconductor substrate within a space having a first width, a gate insulating layer which has a width wider than the first width and may be formed on an upper side of the channel area on the semiconductor substrate, a gate which may be formed with the first width on the gate insulating layer, and a spacer including a first spacer formed at both sides of the gate insulating layer and a second spacer formed at sidewalls of the gate.

Abstract: In a temperature controlling apparatus for controlling temperature by using a temperature sensor, a defect state of the temperature sensor is sensed by sensing a change of specific resistance of the temperature sensor. A temperature value of the temperature sensor is detected at each unit time during exchanging of a chemical solution or stopping of a process in a chamber of the semiconductor fabricating process. A lowest temperature among the detected temperature values and a reference temperature predetermined to sense the change of the specific resistance of the temperature sensor, are compared with each other. When the lowest temperature deviates from the reference temperature, a defect of the temperature sensor is confirmed and a message indicative of a defect state and an alarm are generated.

Abstract: Disclosed is an apparatus and method for producing a three-dimensional (3D) moving image of a moving target object. The method comprises the steps of transmitting and receiving ultrasound signals to/from the moving target object; obtaining raw data; generating image frame data based on the obtained raw data; generating virtual image frame data based on the generated image frame data; and rendering a 3D moving image of the moving target object using the image and virtual image frame data. The apparatus comprises a probe, a raw 3D data obtaining unit, and an enhanced live 3D imaging unit for producing a 3D image of the moving target object.

Abstract: A method and apparatus for enabling a biopsy needle to be observed in a three-dimensional ultrasound diagnostic system using an interventional ultrasound system. The apparatus comprises an ultrasound transducer, a three-dimensional image-forming section, a section for extracting a target object, a location-calculating section, a display section, and a controller. The method comprises the steps of acquiring a two-dimensional ultrasound image of a subject; generating a three-dimensional volume image based on the two-dimensional ultrasound image; segmenting a target image, which corresponds to a target object within the subject, from the three-dimensional volume image; displaying a guide line of the biopsy guide on the segmented target image; extracting the segmented target image; acquiring information on a location of the biopsy needle by reference to the segmented target image; calculating an error based on the information; and displaying a guiding status of the biopsy needle based on the calculated error.

Abstract: A three-dimensional (3D) ultrasound imaging system performs receive-focusing at voxels corresponding to pixels of a display device. The system comprises a display device; transducers for transmitting ultrasound signals toward the object and receiving echo signals from a voxel corresponding to a pixel on the display device, wherein the voxel is on a scanning region of the object; an RF volume memory for storing signals from the transducers; a signal processor for processing the stored signals to obtain 3D data sets with respect to the voxel; and an image former for forming the 3D image.

Abstract: Disclosed is an apparatus and method for producing a three-dimensional (3D) moving image of a moving target object. The method comprises the steps of transmitting and receiving ultrasound signals to/from the moving target object; obtaining raw data; generating image frame data based on the obtained raw data; generating virtual image frame data based on the generated image frame data; and rendering a 3D moving image of the moving target object using the image and virtual image frame data. The apparatus comprises a probe, a raw 3D data obtaining unit, and an enhanced live 3D imaging unit for producing a 3D image of the moving target object.

Abstract: All RF data received by transducers in response to an ultrasonic signal that was transmit-focused on a point along a predetermined scan lines are stored to compute display data for those points of an object that do not necessarily correspond to the pixels of the screen of a display device. For the determination of display data for each pixel point, reflected ultrasonic signals from multiple points around the point of interest are found and used to detect the peak of a waveform constituted by the reflected ultrasonic signals. With this scheme, the distortion due to conventional interpolation used for a limited number of scan lines can be greatly reduced.

Abstract: A method and apparatus for enabling a biopsy needle to be observed in a three-dimensional ultrasound diagnostic system using an interventional ultrasound system. The apparatus comprises an ultrasound transducer, a three-dimensional image-forming section, a section for extracting a target object, a location-calculating section, a display section, and a controller. The method comprises the steps of acquiring a two-dimensional ultrasound image of a subject; generating a three-dimensional volume image based on the two-dimensional ultrasound image; segmenting a target image, which corresponds to a target object within the subject, from the three-dimensional volume image; displaying a guide line of the biopsy guide on the segmented target image; extracting the segmented target image; acquiring information on a location of the biopsy needle by reference to the segmented target image; calculating an error based on the information; and displaying a guiding status of the biopsy needle based on the calculated error.

Abstract: Ultrasound images are obtained using a set of Golay codes with orthogonal property as ultrasound receiving and transmitting signals. Ultrasound signals having a plurality of codes are transmitted simultaneously by using the orthogonal property of the Golay codes. A superior signal-to-noise rate (SNR) is realized using the Golay codes, without suffering a decrease in the frame rate.

Abstract: In a temperature controlling apparatus for controlling temperature by using a temperature sensor, a defect state of the temperature sensor is sensed by sensing a change of specific resistance of the temperature sensor. A temperature value of the temperature sensor is detected at each unit time during exchanging of a chemical solution or stopping of a process in a chamber of the semiconductor fabricating process. A lowest temperature among the detected temperature values and a reference temperature predetermined to sense the change of the specific resistance of the temperature sensor, are compared with each other. When the lowest temperature deviates from the reference temperature, a defect of the temperature sensor is confirmed and a message indicative of a defect state and an alarm are generated.